METHOD FOR PREPARING GRAPHENE BY REACTION WITH Cl2 BASED ON ANNEALING WITH ASSISTANT METAL FILM

Hui Guo

Patent

Atlas literature

Patent

US 9,048,092

METHOD FOR PREPARING GRAPHENE BY REACTION WITH Cl₂ BASED ON ANNEALING WITH ASSISTANT METAL FILM

Hui Guo

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 5 dependent

2
Dependent← claim 1
The process for preparing graphene according to claim 1, characterized in that in step (2), the vacuum in the reactor is about 10-7 mbar. Page 2 of 6 SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231851.1.262.429.2036.562.svg 0.443 5.913 Graph Black and white
4
Dependent← claim 1SiH₄C₃H₈
(Cu rr ent l y Amended) The process for preparing graphene according to claim 1, characterized in that in step (3), the ﬂow rate of the ﬂowed SiH₄ and C₃H s is respectively 15 sccm, -25 sccm and 30 _scem -50 sccm.
1. 5
  Dependent← claim 4SiH₄C₃H₈
  The process for preparing graphene according to claim 4, characterized in that the ﬂow rates of SiH₄ and of C₃H s are adjusted such that the ratio of C/Si =6.
6
Dependent← claim 1ArCl₂
(Cu rr ently Amended) The process for preparing graphene according to claim 1, characterized in that in step (4), the ﬂow rate of the ﬂowed Ar and C l2 is respectively 95 cem-98 sccm and 2 cc:r -5 sccm. SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231851.13.262.1595.2083.1728.svg 0.443 6.07 Graph Black and white
8
Dependent← claim 1Cu
The process for preparing graphene according to claim 1, characterized in that in step (5), the metal ﬁlm is a Cu ﬁlm. SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231851.17.262.2095.2036.2228.svg 0.443 5.913 Graph Black and white SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231851.19.262.2345.2061.2478.svg 0.443 5.997 Graph Black and white SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231851.21.262.2595.2061.2728.svg 0.443 5.997 Graph Black and white
12
IndependentSiH₂SiCcarbon filmArCl₂
(Cu rr ently Amended) A graphene sample with a large area obtained by tre-a Page 3 of 6 (1) cleaning a Si substrate; (2) placing the cleaned Si substrate into a CVD system reactor, wherein the reactor is vacuumized, the temperature is gradually raised to a carbonization temperature of 950 ': -1 150 C under he-a protection of H 2, and C₃H s is ﬂowed into the reactor, such that the Si substrate is SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231852.5.262.762.2120.895.svg 0.443 6.193 Chemistry Black and white reactor, and a 3C-SiC heterogeneous epitaxial ﬁlm is grown on the carbonization layer for 30-60 minutes, and then the temperature is gradually decreased to an ambient temperature under the protection of H 2 so as to complete the growth of the 3C-SiC epitaxial ﬁlm, (4) placing the 3C-SiC ﬁlm into a quartz tube, and heating the 3C-SiC ﬁlm to 700 1-11000C as a mixed g as of Ar and C l 2 is ﬂowed into the quartz tube, and C l 2 is reacted with the 3C-SiC ﬁlm to obtain a carbon ﬁlm, SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231852.13.262.1396.2198.1478.svg 0.273 6.453 Chemistry Black and white SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231852.14.262.1512.2226.1645.svg 0.443 6.547 Chemistry Black and white SVG 14350282.02-27-2015.I₆NVJUXOPXXIFW3.CLM₁1231852.16.262.1679.2191.1812.svg 0.443 6.43 Chemistry Black and white with a large area. Page 4 of 6

Materials

Materials described outside the worked examples.

Si substrate

Substrate

H₂

Protective Gas

Process steps

Additional fabrication and treatment steps described in the patent.

Substrate Cleaning

Step 1

Process details

substrate size:2-20 inch Si wafer

cleaning agents:NH₄OH+H₂O2, HCl+H₂O₂

Materials:Si

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
Duration	30–60 minutes	—
Duration

Why these are connected

Related documents with shared materials, methods, properties, or citations.

METHOD FOR PREPARING GRAPHENE BY REACTION WITH Cl2 BASED ON ANNEALING WITH ASSISTANT METAL FILM | Matter42 Literature