Patent
US 10,253,428Local Carbon-Supply Device and Method for Preparing Wafer-Level
Tianru WU
US
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Patent
Atlas literature
Patent
US 10,253,428Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A local carbon-supply device for manufacturing graphene single crystal, comprising a first substrate, a second substrate and a supporting unit; the first substrate and the second substrate are distributed correspondingly up and down; the support unit is adapted to support the first substrate and the second substrate and keep the first substrate and the second substrate at a certain distance; the first substrate or the second substrate is provided thereon with a through hole y wherein the through hole is connected to a gaseous-source feed pipe as a channel conveying a gaseous source. Currently amended
The local carbon-supply device according to claim 1, wherein the supporting unit is positioned between the first substrate and the second substrate, one end of the supporting unit is contacted with the first substrate, and the other end thereof is contacted with the second substrate. Original
The local carbon-supply device according to claim 1, wherein the first substrate and the second substrate are a quartz piece or a ceramic piece. Original
The local carbon-supply device according to claim 1, wherein the through hole is positioned at a center of the first substrate or a center of the second substrate. Original
The local carbon-supply device according to claim 1, wherein the distance between the first substrate and the second substrate is 0.1 mm-5 mm.-; the diameter of the through hole is 0.2 mm-5 mm.-. Currently amended
A method for preparing a wafer-level graphene single crystal b-ywith the local carbon supply, wherein the method comprises: providing a local carbon-supply device according to claim 1; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, facilitating the nickel-copper alloy substrate to be in a protective atmosphere constituted by a gas mixture of a reducing gas and an inert gas at a preset temperature, and introducing a gaseous carbon source into the local carbon-supply device to thereby grow the graphene single crystal on the nickel-copper alloy substrate. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
A nickel-copper alloy foil substrate is prepared starting from a 25 µm copper foil. The copper foil is electrochemically polished (85% phosphoric acid solution, 0.2 A/cm2, 1-2 min), ultrasonically cleaned with acetone and isopropanol, and blow-dried to achieve surface roughness <50 nm and thickness ~20 µm. The polished copper foil is annealed in H₂/Ar atmosphere at 1,050°C under atmospheric pressure for 2 hours (Ar: 300 sccm, H2: 15 sccm). A nickel layer is then deposited on the copper foil surface by a classic Watt nickel electroplating process to form a nickel-copper double-layer substrate, which is subsequently annealed to form the nickel-copper alloy substrate. The alloy substrate is placed in the local carbon-supply device and the graphene single crystal is grown by CVD using methane as carbon source.
Layer stacks claimed or described, ordered top of device to substrate.
local carbon-supply device
Materials described outside the worked examples.
quartz piece or ceramic piece (substrate)
quartz piece
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 600–10800 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,253,428Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A local carbon-supply device for manufacturing graphene single crystal, comprising a first substrate, a second substrate and a supporting unit; the first substrate and the second substrate are distributed correspondingly up and down; the support unit is adapted to support the first substrate and the second substrate and keep the first substrate and the second substrate at a certain distance; the first substrate or the second substrate is provided thereon with a through hole y wherein the through hole is connected to a gaseous-source feed pipe as a channel conveying a gaseous source. Currently amended
The local carbon-supply device according to claim 1, wherein the supporting unit is positioned between the first substrate and the second substrate, one end of the supporting unit is contacted with the first substrate, and the other end thereof is contacted with the second substrate. Original
The local carbon-supply device according to claim 1, wherein the first substrate and the second substrate are a quartz piece or a ceramic piece. Original
The local carbon-supply device according to claim 1, wherein the through hole is positioned at a center of the first substrate or a center of the second substrate. Original
The local carbon-supply device according to claim 1, wherein the distance between the first substrate and the second substrate is 0.1 mm-5 mm.-; the diameter of the through hole is 0.2 mm-5 mm.-. Currently amended
A method for preparing a wafer-level graphene single crystal b-ywith the local carbon supply, wherein the method comprises: providing a local carbon-supply device according to claim 1; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, facilitating the nickel-copper alloy substrate to be in a protective atmosphere constituted by a gas mixture of a reducing gas and an inert gas at a preset temperature, and introducing a gaseous carbon source into the local carbon-supply device to thereby grow the graphene single crystal on the nickel-copper alloy substrate. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
A nickel-copper alloy foil substrate is prepared starting from a 25 µm copper foil. The copper foil is electrochemically polished (85% phosphoric acid solution, 0.2 A/cm2, 1-2 min), ultrasonically cleaned with acetone and isopropanol, and blow-dried to achieve surface roughness <50 nm and thickness ~20 µm. The polished copper foil is annealed in H₂/Ar atmosphere at 1,050°C under atmospheric pressure for 2 hours (Ar: 300 sccm, H2: 15 sccm). A nickel layer is then deposited on the copper foil surface by a classic Watt nickel electroplating process to form a nickel-copper double-layer substrate, which is subsequently annealed to form the nickel-copper alloy substrate. The alloy substrate is placed in the local carbon-supply device and the graphene single crystal is grown by CVD using methane as carbon source.
Layer stacks claimed or described, ordered top of device to substrate.
local carbon-supply device
Materials described outside the worked examples.
quartz piece or ceramic piece (substrate)
quartz piece
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 600–10800 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,253,428Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A local carbon-supply device for manufacturing graphene single crystal, comprising a first substrate, a second substrate and a supporting unit; the first substrate and the second substrate are distributed correspondingly up and down; the support unit is adapted to support the first substrate and the second substrate and keep the first substrate and the second substrate at a certain distance; the first substrate or the second substrate is provided thereon with a through hole y wherein the through hole is connected to a gaseous-source feed pipe as a channel conveying a gaseous source. Currently amended
The local carbon-supply device according to claim 1, wherein the supporting unit is positioned between the first substrate and the second substrate, one end of the supporting unit is contacted with the first substrate, and the other end thereof is contacted with the second substrate. Original
The local carbon-supply device according to claim 1, wherein the first substrate and the second substrate are a quartz piece or a ceramic piece. Original
The local carbon-supply device according to claim 1, wherein the through hole is positioned at a center of the first substrate or a center of the second substrate. Original
The local carbon-supply device according to claim 1, wherein the distance between the first substrate and the second substrate is 0.1 mm-5 mm.-; the diameter of the through hole is 0.2 mm-5 mm.-. Currently amended
A method for preparing a wafer-level graphene single crystal b-ywith the local carbon supply, wherein the method comprises: providing a local carbon-supply device according to claim 1; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, facilitating the nickel-copper alloy substrate to be in a protective atmosphere constituted by a gas mixture of a reducing gas and an inert gas at a preset temperature, and introducing a gaseous carbon source into the local carbon-supply device to thereby grow the graphene single crystal on the nickel-copper alloy substrate. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
A nickel-copper alloy foil substrate is prepared starting from a 25 µm copper foil. The copper foil is electrochemically polished (85% phosphoric acid solution, 0.2 A/cm2, 1-2 min), ultrasonically cleaned with acetone and isopropanol, and blow-dried to achieve surface roughness <50 nm and thickness ~20 µm. The polished copper foil is annealed in H₂/Ar atmosphere at 1,050°C under atmospheric pressure for 2 hours (Ar: 300 sccm, H2: 15 sccm). A nickel layer is then deposited on the copper foil surface by a classic Watt nickel electroplating process to form a nickel-copper double-layer substrate, which is subsequently annealed to form the nickel-copper alloy substrate. The alloy substrate is placed in the local carbon-supply device and the graphene single crystal is grown by CVD using methane as carbon source.
Layer stacks claimed or described, ordered top of device to substrate.
local carbon-supply device
Materials described outside the worked examples.
quartz piece or ceramic piece (substrate)
quartz piece
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 600–10800 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,253,428Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A local carbon-supply device for manufacturing graphene single crystal, comprising a first substrate, a second substrate and a supporting unit; the first substrate and the second substrate are distributed correspondingly up and down; the support unit is adapted to support the first substrate and the second substrate and keep the first substrate and the second substrate at a certain distance; the first substrate or the second substrate is provided thereon with a through hole y wherein the through hole is connected to a gaseous-source feed pipe as a channel conveying a gaseous source. Currently amended
The local carbon-supply device according to claim 1, wherein the supporting unit is positioned between the first substrate and the second substrate, one end of the supporting unit is contacted with the first substrate, and the other end thereof is contacted with the second substrate. Original
The local carbon-supply device according to claim 1, wherein the first substrate and the second substrate are a quartz piece or a ceramic piece. Original
The local carbon-supply device according to claim 1, wherein the through hole is positioned at a center of the first substrate or a center of the second substrate. Original
The local carbon-supply device according to claim 1, wherein the distance between the first substrate and the second substrate is 0.1 mm-5 mm.-; the diameter of the through hole is 0.2 mm-5 mm.-. Currently amended
A method for preparing a wafer-level graphene single crystal b-ywith the local carbon supply, wherein the method comprises: providing a local carbon-supply device according to claim 1; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, facilitating the nickel-copper alloy substrate to be in a protective atmosphere constituted by a gas mixture of a reducing gas and an inert gas at a preset temperature, and introducing a gaseous carbon source into the local carbon-supply device to thereby grow the graphene single crystal on the nickel-copper alloy substrate. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
7 materials4 process steps
A nickel-copper alloy foil substrate is prepared starting from a 25 µm copper foil. The copper foil is electrochemically polished (85% phosphoric acid solution, 0.2 A/cm2, 1-2 min), ultrasonically cleaned with acetone and isopropanol, and blow-dried to achieve surface roughness <50 nm and thickness ~20 µm. The polished copper foil is annealed in H₂/Ar atmosphere at 1,050°C under atmospheric pressure for 2 hours (Ar: 300 sccm, H2: 15 sccm). A nickel layer is then deposited on the copper foil surface by a classic Watt nickel electroplating process to form a nickel-copper double-layer substrate, which is subsequently annealed to form the nickel-copper alloy substrate. The alloy substrate is placed in the local carbon-supply device and the graphene single crystal is grown by CVD using methane as carbon source.
Layer stacks claimed or described, ordered top of device to substrate.
local carbon-supply device
Materials described outside the worked examples.
quartz piece or ceramic piece (substrate)
quartz piece
SiO₂
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 600–10800 s | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
ceramic piece
gaseous carbon source
| 2–3 mm |
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
ceramic piece
gaseous carbon source
| 2–3 mm |
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
ceramic piece
gaseous carbon source
| 2–3 mm |
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
ceramic piece
gaseous carbon source
| 2–3 mm |
| — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |