Patent
US 11,518,142Title: METHOD FOR MAKING POROUS GRAPHENE MEMBRANES AND MEMBRANES PRODUCED USING THE 12 it5 5 2 1 10 5 6
HEIGHT, Murray, PARK, Hyung Gyu
14 December 2017·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 11,518,142Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a porous graphene layer having a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, said method comprising: providing a catalytically active substrate to catalyze the graphene formation under chemical vapor deposition conditions, said catalytically active substrate being selected from the group consisting of the following elemental metals: Cu, Ni, Pt, Ru, Ir, Rh or a combination thereof in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and fo rm ation of the porous graphene layer on the surface of the catalytically active substrate, the pores in the graphene layer in situ being formed due to the presence of the catalytically inactive domains, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition of a catalytically inactive material selected from the group consisting of: molybdenum, tungsten, gold, silver, zirconium, niobium, chromium or a mixture/alloy thereof, or oxide systems thereof or aluminum oxide and subsequent the rm al annealing to form the plurality of catalytically inactive domains, and wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Currently amended
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size between 5-900 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the method is a continuous or a batch process. Previously presented
The method according to claim 1, wherein the pores have an average size of 10-500 nm. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, for the making of the substrate on a catalytically active substrate, a metal layer is produced using a metal which is not catalytically active, then, after the pressure is lowered to baseline values at or below 0.0002 Pa, the substrate is first heated to a temperature in the range of 900-1200 ° C to anneal in a chemically reducing environment for a time span in the range of 30-120 minutes. Previously presented
Use of a porous graphene layer as produced using the method according to claim 1 as a waterproof and highly breathable membrane for textile applications; water barrier membranes; pressure equalizer membranes for electronics including cell phones and handheld devices; filters; gas separation membranes; and electronic components for conductive, semi-conductive or electricity generating applications. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Previously presented
The method according to claim 1, wherein the catalytically active substrate is furnished with a plurality of catalytically inactive domains subjected to a step of annealing in a chemically reducing environment, in hydrogen, prior to the step of chemical vapor deposition. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 50-90 vol-% H 2, in an inactive carrier gas, including inert gases including Ar, He and Ne or N2, at a temperature of 900-1200 ° C, for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas selected from the group consisting of Ar, He, Ne, N2, and mixtures thereof, at a temperature of 950-1100 ° C, at a pressure of 1 to 100000 Pa for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas, at a temperature of 950-1100 ° C, at a pressure of 10-100 Pa for a time span of 60-90 minutes. Previously presented
The method according to claim 1, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition, in the form of sputtering, e-beam evaporation or particle spraying, of a catalytically inactive material or of a material catalytically inactivating the substrate and subsequent the rm al annealing to form the plurality of catalytically inactive domains. Previously presented
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains, wherein the metal different from said first group is selected from the second group consisting of: molybdenum, tungsten, niobium, gold, silver, zirconium, chromium or a mixture/alloy thereof or from metal oxides including aluminium oxide. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-100 nm. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm and wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 20 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 10 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 5 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, using at least one of a mechanical and an electrochemical method, electrochemical delamination, or disengagement by mechanical actuation, including ultrasonic actuation or thermal actuation, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate via van der Waals peeling, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the pores have an average size of 20-100 nm. Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-100 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-500 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 0.5-150 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 1-10 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source chosen to be saturated or unsaturated hydrocarbons is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen, and wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-10000 Pa. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 600- 800 parts hydrocarbon per part of hydrogen, wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-200 or 80-120 Pa, and wherein a CVD process is carried out at a temperature of 300-1200 ° C, for a time span of 1-12 hours. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-20, wherein a CVD process is carried out at a temperature of 300-800 ° C for a time span of 2-4 hours. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, and wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa, and wherein a deposition rate of 0.01-1.0 A/s is used. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm for use as a waterproof and highly breathable membrane for pressure equalizer membranes for electronics gas separation membranes; electronic components electricity generating applications. Previously textile applications; barrier membranes or including cell phones and handheld devices; filters; for conductive, semi-conductive and/or presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
porous graphene membrane
Materials described outside the worked examples.
porous graphene layer
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,518,142Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a porous graphene layer having a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, said method comprising: providing a catalytically active substrate to catalyze the graphene formation under chemical vapor deposition conditions, said catalytically active substrate being selected from the group consisting of the following elemental metals: Cu, Ni, Pt, Ru, Ir, Rh or a combination thereof in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and fo rm ation of the porous graphene layer on the surface of the catalytically active substrate, the pores in the graphene layer in situ being formed due to the presence of the catalytically inactive domains, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition of a catalytically inactive material selected from the group consisting of: molybdenum, tungsten, gold, silver, zirconium, niobium, chromium or a mixture/alloy thereof, or oxide systems thereof or aluminum oxide and subsequent the rm al annealing to form the plurality of catalytically inactive domains, and wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Currently amended
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size between 5-900 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the method is a continuous or a batch process. Previously presented
The method according to claim 1, wherein the pores have an average size of 10-500 nm. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, for the making of the substrate on a catalytically active substrate, a metal layer is produced using a metal which is not catalytically active, then, after the pressure is lowered to baseline values at or below 0.0002 Pa, the substrate is first heated to a temperature in the range of 900-1200 ° C to anneal in a chemically reducing environment for a time span in the range of 30-120 minutes. Previously presented
Use of a porous graphene layer as produced using the method according to claim 1 as a waterproof and highly breathable membrane for textile applications; water barrier membranes; pressure equalizer membranes for electronics including cell phones and handheld devices; filters; gas separation membranes; and electronic components for conductive, semi-conductive or electricity generating applications. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Previously presented
The method according to claim 1, wherein the catalytically active substrate is furnished with a plurality of catalytically inactive domains subjected to a step of annealing in a chemically reducing environment, in hydrogen, prior to the step of chemical vapor deposition. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 50-90 vol-% H 2, in an inactive carrier gas, including inert gases including Ar, He and Ne or N2, at a temperature of 900-1200 ° C, for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas selected from the group consisting of Ar, He, Ne, N2, and mixtures thereof, at a temperature of 950-1100 ° C, at a pressure of 1 to 100000 Pa for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas, at a temperature of 950-1100 ° C, at a pressure of 10-100 Pa for a time span of 60-90 minutes. Previously presented
The method according to claim 1, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition, in the form of sputtering, e-beam evaporation or particle spraying, of a catalytically inactive material or of a material catalytically inactivating the substrate and subsequent the rm al annealing to form the plurality of catalytically inactive domains. Previously presented
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains, wherein the metal different from said first group is selected from the second group consisting of: molybdenum, tungsten, niobium, gold, silver, zirconium, chromium or a mixture/alloy thereof or from metal oxides including aluminium oxide. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-100 nm. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm and wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 20 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 10 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 5 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, using at least one of a mechanical and an electrochemical method, electrochemical delamination, or disengagement by mechanical actuation, including ultrasonic actuation or thermal actuation, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate via van der Waals peeling, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the pores have an average size of 20-100 nm. Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-100 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-500 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 0.5-150 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 1-10 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source chosen to be saturated or unsaturated hydrocarbons is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen, and wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-10000 Pa. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 600- 800 parts hydrocarbon per part of hydrogen, wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-200 or 80-120 Pa, and wherein a CVD process is carried out at a temperature of 300-1200 ° C, for a time span of 1-12 hours. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-20, wherein a CVD process is carried out at a temperature of 300-800 ° C for a time span of 2-4 hours. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, and wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa, and wherein a deposition rate of 0.01-1.0 A/s is used. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm for use as a waterproof and highly breathable membrane for pressure equalizer membranes for electronics gas separation membranes; electronic components electricity generating applications. Previously textile applications; barrier membranes or including cell phones and handheld devices; filters; for conductive, semi-conductive and/or presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
porous graphene membrane
Materials described outside the worked examples.
porous graphene layer
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,518,142Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a porous graphene layer having a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, said method comprising: providing a catalytically active substrate to catalyze the graphene formation under chemical vapor deposition conditions, said catalytically active substrate being selected from the group consisting of the following elemental metals: Cu, Ni, Pt, Ru, Ir, Rh or a combination thereof in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and fo rm ation of the porous graphene layer on the surface of the catalytically active substrate, the pores in the graphene layer in situ being formed due to the presence of the catalytically inactive domains, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition of a catalytically inactive material selected from the group consisting of: molybdenum, tungsten, gold, silver, zirconium, niobium, chromium or a mixture/alloy thereof, or oxide systems thereof or aluminum oxide and subsequent the rm al annealing to form the plurality of catalytically inactive domains, and wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Currently amended
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size between 5-900 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the method is a continuous or a batch process. Previously presented
The method according to claim 1, wherein the pores have an average size of 10-500 nm. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, for the making of the substrate on a catalytically active substrate, a metal layer is produced using a metal which is not catalytically active, then, after the pressure is lowered to baseline values at or below 0.0002 Pa, the substrate is first heated to a temperature in the range of 900-1200 ° C to anneal in a chemically reducing environment for a time span in the range of 30-120 minutes. Previously presented
Use of a porous graphene layer as produced using the method according to claim 1 as a waterproof and highly breathable membrane for textile applications; water barrier membranes; pressure equalizer membranes for electronics including cell phones and handheld devices; filters; gas separation membranes; and electronic components for conductive, semi-conductive or electricity generating applications. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Previously presented
The method according to claim 1, wherein the catalytically active substrate is furnished with a plurality of catalytically inactive domains subjected to a step of annealing in a chemically reducing environment, in hydrogen, prior to the step of chemical vapor deposition. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 50-90 vol-% H 2, in an inactive carrier gas, including inert gases including Ar, He and Ne or N2, at a temperature of 900-1200 ° C, for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas selected from the group consisting of Ar, He, Ne, N2, and mixtures thereof, at a temperature of 950-1100 ° C, at a pressure of 1 to 100000 Pa for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas, at a temperature of 950-1100 ° C, at a pressure of 10-100 Pa for a time span of 60-90 minutes. Previously presented
The method according to claim 1, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition, in the form of sputtering, e-beam evaporation or particle spraying, of a catalytically inactive material or of a material catalytically inactivating the substrate and subsequent the rm al annealing to form the plurality of catalytically inactive domains. Previously presented
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains, wherein the metal different from said first group is selected from the second group consisting of: molybdenum, tungsten, niobium, gold, silver, zirconium, chromium or a mixture/alloy thereof or from metal oxides including aluminium oxide. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-100 nm. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm and wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 20 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 10 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 5 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, using at least one of a mechanical and an electrochemical method, electrochemical delamination, or disengagement by mechanical actuation, including ultrasonic actuation or thermal actuation, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate via van der Waals peeling, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the pores have an average size of 20-100 nm. Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-100 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-500 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 0.5-150 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 1-10 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source chosen to be saturated or unsaturated hydrocarbons is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen, and wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-10000 Pa. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 600- 800 parts hydrocarbon per part of hydrogen, wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-200 or 80-120 Pa, and wherein a CVD process is carried out at a temperature of 300-1200 ° C, for a time span of 1-12 hours. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-20, wherein a CVD process is carried out at a temperature of 300-800 ° C for a time span of 2-4 hours. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, and wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa, and wherein a deposition rate of 0.01-1.0 A/s is used. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm for use as a waterproof and highly breathable membrane for pressure equalizer membranes for electronics gas separation membranes; electronic components electricity generating applications. Previously textile applications; barrier membranes or including cell phones and handheld devices; filters; for conductive, semi-conductive and/or presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
porous graphene membrane
Materials described outside the worked examples.
porous graphene layer
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,518,142Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for making a porous graphene layer having a thickness of less than 100 nm with pores having an average size in the range of 5-900 nm, said method comprising: providing a catalytically active substrate to catalyze the graphene formation under chemical vapor deposition conditions, said catalytically active substrate being selected from the group consisting of the following elemental metals: Cu, Ni, Pt, Ru, Ir, Rh or a combination thereof in or on its surface being provided with a plurality of catalytically inactive domains having a size essentially corresponding to the size of the pores in the resultant porous graphene layer; chemical vapor deposition using a carbon source in the gas phase and fo rm ation of the porous graphene layer on the surface of the catalytically active substrate, the pores in the graphene layer in situ being formed due to the presence of the catalytically inactive domains, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition of a catalytically inactive material selected from the group consisting of: molybdenum, tungsten, gold, silver, zirconium, niobium, chromium or a mixture/alloy thereof, or oxide systems thereof or aluminum oxide and subsequent the rm al annealing to form the plurality of catalytically inactive domains, and wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Currently amended
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size between 5-900 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the method is a continuous or a batch process. Previously presented
The method according to claim 1, wherein the pores have an average size of 10-500 nm. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, for the making of the substrate on a catalytically active substrate, a metal layer is produced using a metal which is not catalytically active, then, after the pressure is lowered to baseline values at or below 0.0002 Pa, the substrate is first heated to a temperature in the range of 900-1200 ° C to anneal in a chemically reducing environment for a time span in the range of 30-120 minutes. Previously presented
Use of a porous graphene layer as produced using the method according to claim 1 as a waterproof and highly breathable membrane for textile applications; water barrier membranes; pressure equalizer membranes for electronics including cell phones and handheld devices; filters; gas separation membranes; and electronic components for conductive, semi-conductive or electricity generating applications. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment. Previously presented
The method according to claim 1, wherein the catalytically active substrate is furnished with a plurality of catalytically inactive domains subjected to a step of annealing in a chemically reducing environment, in hydrogen, prior to the step of chemical vapor deposition. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 50-90 vol-% H 2, in an inactive carrier gas, including inert gases including Ar, He and Ne or N2, at a temperature of 900-1200 ° C, for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas selected from the group consisting of Ar, He, Ne, N2, and mixtures thereof, at a temperature of 950-1100 ° C, at a pressure of 1 to 100000 Pa for a time span of 30-120 minutes. Previously presented
The method according to claim 1, wherein the catalytically active substrate with the plurality of catalytically inactive domains prior to the step of chemical vapor deposition is subjected to a step of annealing in a chemically reducing hydrogen environment, and wherein conditions for this annealing are chosen as follows: 70-85 vol-% H 2, in an inactive carrier gas, at a temperature of 950-1100 ° C, at a pressure of 10-100 Pa for a time span of 60-90 minutes. Previously presented
The method according to claim 1, wherein said catalytically active substrate with a plurality of catalytically inactive domains is produced by spraying or physical vapor deposition, in the form of sputtering, e-beam evaporation or particle spraying, of a catalytically inactive material or of a material catalytically inactivating the substrate and subsequent the rm al annealing to form the plurality of catalytically inactive domains. Previously presented
The method according to claim 1, wherein the catalytically active substrate is a substrate comprising an elemental metal selected from the first group consisting of Cu, Ni, Pt, Ru, Ir, Rh or a mixture thereof, and wherein the catalytically inactive domains are due to the presence of a metal different from said first group in said domains, wherein the metal different from said first group is selected from the second group consisting of: molybdenum, tungsten, niobium, gold, silver, zirconium, chromium or a mixture/alloy thereof or from metal oxides including aluminium oxide. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-100 nm. Previously presented
The method according to claim 1, wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 50 nm and wherein the catalytically inactive domains have an average size of 10-50 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 20 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 10 nm. Previously presented
The method according to claim 1, wherein the porous graphene layer has a thickness of less than 5 nm. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate, using at least one of a mechanical and an electrochemical method, electrochemical delamination, or disengagement by mechanical actuation, including ultrasonic actuation or thermal actuation, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein subsequent to the chemical vapor deposition of the porous graphene layer, the porous graphene layer is removed from the substrate via van der Waals peeling, and subsequent transfer to another substrate. Previously presented
The method according to claim 1, wherein the pores have an average size of 20-100 nm. Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-100 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein a density of the pores is 0.1-500 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 0.5-150 x 10 10 cm 2. Previously presented
The method according to claim 1, wherein a density of the pores is 1-10 x 10 10 cm⁻². Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source chosen to be saturated or unsaturated hydrocarbons is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-1000 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-10 parts hydrocarbon per part of hydrogen, and wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-10000 Pa. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 600- 800 parts hydrocarbon per part of hydrogen, wherein the hydrocarbon and hydrogen gases are mixed with a carrier gas including argon or nitrogen or are used at 1-20 vol-% in concentration mixed with hydrogen at an overall pressure in the range of 10-200 or 80-120 Pa, and wherein a CVD process is carried out at a temperature of 300-1200 ° C, for a time span of 1-12 hours. Previously presented
The method according to claim 1, wherein, in the step of chemical vapor deposition, the carbon source, chosen to be methane, ethane, ethylene, acetylene and mixtures thereof, is provided as a flow mixture of hydrocarbon and hydrogen at a volumetric ratio of 1-20, wherein a CVD process is carried out at a temperature of 300-800 ° C for a time span of 2-4 hours. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, and wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa. Previously presented
The method according to claim 1, wherein, for making of the substrate on a catalytically active substrate in the form of a copper foil, a metal layer is produced using tungsten metal which is not catalytically active, wherein such a contiguous layer which is 1-10 nm thick is in a first step produced via physical vapor deposition at a chamber pressure from 2.0 x 10- 5 to 3.0 x 10- 4 Pa, and wherein a deposition rate of 0.01-1.0 A/s is used. Previously presented
A porous graphene layer as produced using the method according to claim 1, with a thickness of less than 100 nm and with the pores having an average size of 5-900 nm for use as a waterproof and highly breathable membrane for pressure equalizer membranes for electronics gas separation membranes; electronic components electricity generating applications. Previously textile applications; barrier membranes or including cell phones and handheld devices; filters; for conductive, semi-conductive and/or presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
porous graphene membrane
Materials described outside the worked examples.
porous graphene layer
copper
Cu
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 10–100 nm | — |
Pressure |
Related documents with shared materials, methods, properties, or citations.
nickel
Ni
platinum
Pt
ruthenium
Ru
iridium
Ir
rhodium
Rh
molybdenum
Mo
tungsten
W
gold
Au
silver
Ag
zirconium
Zr
aluminum oxide
Al₂O₃
niobium
Nb
chromium
Cr
| — |
Thickness | ≤ 900 nm | — |
Thickness | ≤ 5 nm | — |
Pressure | ≤ 0.1 Pa | — |
Thickness | 5–900 nm | — |
Thickness | 10–500 nm | — |
Pressure | 1–1000 pa | — |
Temperature | 900–1200 °C | — |
Duration | 30–120 minutes | — |
Temperature | 950–1100 °C | — |
Pressure | 10–100 Pa | — |
Duration | 60–90 minutes | — |
Thickness | 10–50 nm | — |
Thickness | 20–100 nm | — |
Pressure | 1–10 pa | — |
Pressure | 600–800 pa | — |
Pressure | 80–120 Pa | — |
Temperature | 300–1200 °C | — |
Duration | 1–12 hours | — |
Temperature | 300–800 °C | — |
Duration | 2–4 hours | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Pressure | ≤ 0.0002 Pa | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 10–800 nm | — |
Pressure | 10–200 Pa | — |
Pressure | 20–150 Pa | — |
Temperature | 500–1000 °C | — |
Pressure | 30–50 Pa | — |
Temperature | 500–900 °C | — |
Temperature | 500–800 °C | — |
Duration | 2–3 hours | — |
Thickness | ≤ 8 nm | — |
Thickness | ≤ 2 nm | — |
Temperature | ≥ 900 °C | — |
nickel
Ni
platinum
Pt
ruthenium
Ru
iridium
Ir
rhodium
Rh
molybdenum
Mo
tungsten
W
gold
Au
silver
Ag
zirconium
Zr
aluminum oxide
Al₂O₃
niobium
Nb
chromium
Cr
| — |
Thickness | ≤ 900 nm | — |
Thickness | ≤ 5 nm | — |
Pressure | ≤ 0.1 Pa | — |
Thickness | 5–900 nm | — |
Thickness | 10–500 nm | — |
Pressure | 1–1000 pa | — |
Temperature | 900–1200 °C | — |
Duration | 30–120 minutes | — |
Temperature | 950–1100 °C | — |
Pressure | 10–100 Pa | — |
Duration | 60–90 minutes | — |
Thickness | 10–50 nm | — |
Thickness | 20–100 nm | — |
Pressure | 1–10 pa | — |
Pressure | 600–800 pa | — |
Pressure | 80–120 Pa | — |
Temperature | 300–1200 °C | — |
Duration | 1–12 hours | — |
Temperature | 300–800 °C | — |
Duration | 2–4 hours | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Pressure | ≤ 0.0002 Pa | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 10–800 nm | — |
Pressure | 10–200 Pa | — |
Pressure | 20–150 Pa | — |
Temperature | 500–1000 °C | — |
Pressure | 30–50 Pa | — |
Temperature | 500–900 °C | — |
Temperature | 500–800 °C | — |
Duration | 2–3 hours | — |
Thickness | ≤ 8 nm | — |
Thickness | ≤ 2 nm | — |
Temperature | ≥ 900 °C | — |
nickel
Ni
platinum
Pt
ruthenium
Ru
iridium
Ir
rhodium
Rh
molybdenum
Mo
tungsten
W
gold
Au
silver
Ag
zirconium
Zr
aluminum oxide
Al₂O₃
niobium
Nb
chromium
Cr
| — |
Thickness | ≤ 900 nm | — |
Thickness | ≤ 5 nm | — |
Pressure | ≤ 0.1 Pa | — |
Thickness | 5–900 nm | — |
Thickness | 10–500 nm | — |
Pressure | 1–1000 pa | — |
Temperature | 900–1200 °C | — |
Duration | 30–120 minutes | — |
Temperature | 950–1100 °C | — |
Pressure | 10–100 Pa | — |
Duration | 60–90 minutes | — |
Thickness | 10–50 nm | — |
Thickness | 20–100 nm | — |
Pressure | 1–10 pa | — |
Pressure | 600–800 pa | — |
Pressure | 80–120 Pa | — |
Temperature | 300–1200 °C | — |
Duration | 1–12 hours | — |
Temperature | 300–800 °C | — |
Duration | 2–4 hours | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Pressure | ≤ 0.0002 Pa | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 10–800 nm | — |
Pressure | 10–200 Pa | — |
Pressure | 20–150 Pa | — |
Temperature | 500–1000 °C | — |
Pressure | 30–50 Pa | — |
Temperature | 500–900 °C | — |
Temperature | 500–800 °C | — |
Duration | 2–3 hours | — |
Thickness | ≤ 8 nm | — |
Thickness | ≤ 2 nm | — |
Temperature | ≥ 900 °C | — |
nickel
Ni
platinum
Pt
ruthenium
Ru
iridium
Ir
rhodium
Rh
molybdenum
Mo
tungsten
W
gold
Au
silver
Ag
zirconium
Zr
aluminum oxide
Al₂O₃
niobium
Nb
chromium
Cr
| — |
Thickness | ≤ 900 nm | — |
Thickness | ≤ 5 nm | — |
Pressure | ≤ 0.1 Pa | — |
Thickness | 5–900 nm | — |
Thickness | 10–500 nm | — |
Pressure | 1–1000 pa | — |
Temperature | 900–1200 °C | — |
Duration | 30–120 minutes | — |
Temperature | 950–1100 °C | — |
Pressure | 10–100 Pa | — |
Duration | 60–90 minutes | — |
Thickness | 10–50 nm | — |
Thickness | 20–100 nm | — |
Pressure | 1–10 pa | — |
Pressure | 600–800 pa | — |
Pressure | 80–120 Pa | — |
Temperature | 300–1200 °C | — |
Duration | 1–12 hours | — |
Temperature | 300–800 °C | — |
Duration | 2–4 hours | — |
Thickness | 1–10 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Pressure | ≤ 0.0002 Pa | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | 10–800 nm | — |
Pressure | 10–200 Pa | — |
Pressure | 20–150 Pa | — |
Temperature | 500–1000 °C | — |
Pressure | 30–50 Pa | — |
Temperature | 500–900 °C | — |
Temperature | 500–800 °C | — |
Duration | 2–3 hours | — |
Thickness | ≤ 8 nm | — |
Thickness | ≤ 2 nm | — |
Temperature | ≥ 900 °C | — |