Patent
US 9,153,389pseudocapacitive material
RuO₂
IrO₂
NiOx
Co₃O₄
MnO₂
copper
Cu
nickel
Ni
silicon carbide
SiC
carbon nanotube length | 1–500 um | aligned carbon nanotubes |
carbon nanotube area density in bundles | 100000000–1000000000 /cm2 | aligned carbon nanotubes |
Pressure | 1e-7 torr | — |
pseudocapacitive material
RuO₂
IrO₂
NiOx
Co₃O₄
MnO₂
copper
Cu
nickel
Ni
silicon carbide
SiC
carbon nanotube length | 1–500 um | aligned carbon nanotubes |
carbon nanotube area density in bundles | 100000000–1000000000 /cm2 | aligned carbon nanotubes |
Pressure | 1e-7 torr | — |
pseudocapacitive material
RuO₂
IrO₂
NiOx
Co₃O₄
MnO₂
copper
Cu
nickel
Ni
silicon carbide
SiC
carbon nanotube length | 1–500 um | aligned carbon nanotubes |
carbon nanotube area density in bundles | 100000000–1000000000 /cm2 | aligned carbon nanotubes |
Pressure | 1e-7 torr | — |
pseudocapacitive material
RuO₂
IrO₂
NiOx
Co₃O₄
MnO₂
copper
Cu
nickel
Ni
silicon carbide
SiC
carbon nanotube length | 1–500 um | aligned carbon nanotubes |
carbon nanotube area density in bundles | 100000000–1000000000 /cm2 | aligned carbon nanotubes |
Pressure | 1e-7 torr | — |