Patent
US 9,748,581Functionalized Graphene-Pt Composites for Fuel Cells and Photoelectrochemical Cells
Georgi Diankov, Jihwan An, Joonsuk Park, David J. K. Goldhaber et al.
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,748,581Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B) Rama n spectra o f hydrogenated and hygrogen ated +dehi ydr ogenated 1L grapheme; (FIG. IC) AFM top ogra p hy of monolayer gra p hene treated with …
FIG. 2D) h ydroge n ate d (120s) + deh ydroge n ated gra phen es. Her e, 1 L r epr es ent s a m onolayer, 2 L re p rese n ts a bilayer, and Multi L re p …
FIG. 3A), (F IG. 3B) atomic force m icrosco p y images of 1-layer (1L) gra p hene. (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing crystals on two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two- dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming Pt- O on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said Pt- O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.
(CURRENTLY A M ENDED) The method according to claim 1, wherein said two- dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.
canceled
The method according to claim 4 claim 1, wherein said dehydrogenating is done by annealing two-dimensional layered material under ar g on at 300 0C.
A method of growing crystals on a two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said crystal- O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs. S₁₃-291/US Page 3 14/634791
The method according to claim 6, wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.
The method according to claim 6, wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
The method according to claim 6, wherein said crystal-forming molecule comprises Al 2, wherein A₁ 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
canceled
The method according to claim 11 claim 6, wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300 'C. S₁₃-291/US Page 4 14/634791
Materials described outside the worked examples.
graphene
Pt
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy reveals the D-band is prominent after hydrogenation (due to formation of sp3 C-H bonds) and almost entirely suppressed after dehydrogenation, as shown in FIGs. 1A-1C.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,581Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B) Rama n spectra o f hydrogenated and hygrogen ated +dehi ydr ogenated 1L grapheme; (FIG. IC) AFM top ogra p hy of monolayer gra p hene treated with …
FIG. 2D) h ydroge n ate d (120s) + deh ydroge n ated gra phen es. Her e, 1 L r epr es ent s a m onolayer, 2 L re p rese n ts a bilayer, and Multi L re p …
FIG. 3A), (F IG. 3B) atomic force m icrosco p y images of 1-layer (1L) gra p hene. (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing crystals on two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two- dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming Pt- O on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said Pt- O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.
(CURRENTLY A M ENDED) The method according to claim 1, wherein said two- dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.
canceled
The method according to claim 4 claim 1, wherein said dehydrogenating is done by annealing two-dimensional layered material under ar g on at 300 0C.
A method of growing crystals on a two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said crystal- O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs. S₁₃-291/US Page 3 14/634791
The method according to claim 6, wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.
The method according to claim 6, wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
The method according to claim 6, wherein said crystal-forming molecule comprises Al 2, wherein A₁ 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
canceled
The method according to claim 11 claim 6, wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300 'C. S₁₃-291/US Page 4 14/634791
Materials described outside the worked examples.
graphene
Pt
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy reveals the D-band is prominent after hydrogenation (due to formation of sp3 C-H bonds) and almost entirely suppressed after dehydrogenation, as shown in FIGs. 1A-1C.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,581Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B) Rama n spectra o f hydrogenated and hygrogen ated +dehi ydr ogenated 1L grapheme; (FIG. IC) AFM top ogra p hy of monolayer gra p hene treated with …
FIG. 2D) h ydroge n ate d (120s) + deh ydroge n ated gra phen es. Her e, 1 L r epr es ent s a m onolayer, 2 L re p rese n ts a bilayer, and Multi L re p …
FIG. 3A), (F IG. 3B) atomic force m icrosco p y images of 1-layer (1L) gra p hene. (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing crystals on two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two- dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming Pt- O on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said Pt- O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.
(CURRENTLY A M ENDED) The method according to claim 1, wherein said two- dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.
canceled
The method according to claim 4 claim 1, wherein said dehydrogenating is done by annealing two-dimensional layered material under ar g on at 300 0C.
A method of growing crystals on a two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said crystal- O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs. S₁₃-291/US Page 3 14/634791
The method according to claim 6, wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.
The method according to claim 6, wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
The method according to claim 6, wherein said crystal-forming molecule comprises Al 2, wherein A₁ 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
canceled
The method according to claim 11 claim 6, wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300 'C. S₁₃-291/US Page 4 14/634791
Materials described outside the worked examples.
graphene
Pt
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy reveals the D-band is prominent after hydrogenation (due to formation of sp3 C-H bonds) and almost entirely suppressed after dehydrogenation, as shown in FIGs. 1A-1C.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,748,581Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 B) Rama n spectra o f hydrogenated and hygrogen ated +dehi ydr ogenated 1L grapheme; (FIG. IC) AFM top ogra p hy of monolayer gra p hene treated with …
FIG. 2D) h ydroge n ate d (120s) + deh ydroge n ated gra phen es. Her e, 1 L r epr es ent s a m onolayer, 2 L re p rese n ts a bilayer, and Multi L re p …
FIG. 3A), (F IG. 3B) atomic force m icrosco p y images of 1-layer (1L) gra p hene. (
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of growing crystals on two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing Pt atoms on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using Atomic Layer Deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD Pt precursor, wherein said reversibly hydrogenated two- dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming Pt- O on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said Pt- O is used for subsequent Pt half-cycles of said ALD process, wherein growth of Pt crystals occurs.
(CURRENTLY A M ENDED) The method according to claim 1, wherein said two- dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and metal dichalcogenides.
canceled
The method according to claim 4 claim 1, wherein said dehydrogenating is done by annealing two-dimensional layered material under ar g on at 300 0C.
A method of growing crystals on a two-dimensional layered material, comprising: a. reversibly hydrogenating a two-dimensional layered material, using a controlled radio-frequency hydrogen plasma; b. depositing crystal-forming molecules on said reversibly hydrogenated or on a dehydrogenated two-dimensional layered material, using atomic layer deposition (ALD), wherein said reversibly hydrogenated two-dimensional layered material promotes loss of methyl groups in an ALD precursor, wherein said reversibly hydrogenated two-dimensional layered material is dehydrogenated prior to depositing said Pt using said ALD; and c. forming crystal-O x bonds on said reversibly hydrogenated two-dimensional layered material, using combustion by 02, wherein said crystal- O x is used for a subsequent half-cycle of said ALD process, wherein growth of said crystals occurs. S₁₃-291/US Page 3 14/634791
The method according to claim 6, wherein said two-dimensional layered material is selected from the group consisting of graphene, hexagonal boron nitride, and dichalcogenides.
The method according to claim 6, wherein said crystal-forming molecule comprises Ti, wherein TiO 2 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
The method according to claim 6, wherein said crystal-forming molecule comprises Al 2, wherein A₁ 2 O 3 crystals are formed on said reversibly hydrogenated two-dimensional layered material.
canceled
The method according to claim 11 claim 6, wherein said dehydrogenating is done by annealing two-dimensional layered material under argon at 300 'C. S₁₃-291/US Page 4 14/634791
Materials described outside the worked examples.
graphene
Pt
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Raman spectroscopy reveals the D-band is prominent after hydrogenation (due to formation of sp3 C-H bonds) and almost entirely suppressed after dehydrogenation, as shown in FIGs. 1A-1C.
Related documents with shared materials, methods, properties, or citations.
Pt-O
hexagonal boron nitride
h-BN
dichalcogenides
molybdenum sulfide
MoS₂
tungsten selenide
WSe₂
titanium dioxide
TiO₂
aluminum oxide
Al₂O₃
hydrogenated graphene
Pt nanoparticles
Epitaxial growth of nanocrystals on graphene and other two-dimensional materials directly observed by Scanning Transmission Electron Microscopy.
Pt-O
hexagonal boron nitride
h-BN
dichalcogenides
molybdenum sulfide
MoS₂
tungsten selenide
WSe₂
titanium dioxide
TiO₂
aluminum oxide
Al₂O₃
hydrogenated graphene
Pt nanoparticles
Epitaxial growth of nanocrystals on graphene and other two-dimensional materials directly observed by Scanning Transmission Electron Microscopy.
Pt-O
hexagonal boron nitride
h-BN
dichalcogenides
molybdenum sulfide
MoS₂
tungsten selenide
WSe₂
titanium dioxide
TiO₂
aluminum oxide
Al₂O₃
hydrogenated graphene
Pt nanoparticles
Epitaxial growth of nanocrystals on graphene and other two-dimensional materials directly observed by Scanning Transmission Electron Microscopy.
Pt-O
hexagonal boron nitride
h-BN
dichalcogenides
molybdenum sulfide
MoS₂
tungsten selenide
WSe₂
titanium dioxide
TiO₂
aluminum oxide
Al₂O₃
hydrogenated graphene
Pt nanoparticles
Epitaxial growth of nanocrystals on graphene and other two-dimensional materials directly observed by Scanning Transmission Electron Microscopy.