Patent
US 10,170,563GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME
Tinggang Zhu
US
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Patent
Atlas literature
Patent
US 10,170,563Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor power device comprising: a-per iphe fal-area-e f a top gallium nitride layer comprises a plurality of guard rings disposed in a peripheral area of the top gallium nitride layer wherein the guard rings comprise a plurality of trenches having substantially a same depth opened in an upper portion of the top gallium nitride layer filled with a P-doped gallium-based epitaxial layer therein and wherein the guard rings surrounding a first electrode of the semiconductor power device feming as comprises a metal layer covering over a middle portion of a top surface of the top gallium nitride layer; and a heavily doped bottom gallium nitride epitaxial layer extending beyond an outer edge of the top gallium nitride layer wherein an extended portion of the bottom gallium nitride epitaxial layer having an exposed top surface not covered by the top gallium nitride layer and wherein a second electrode of the semiconductor power device is disposed directly on the exposed top surface of the extended portion of the bottom gallium nitride layer.
The gallium nitride based semiconductor power device of claim 1 wherein: the semiconductor device constitutes a diode with the first electrode disposed on the top surface of the top gallium nitride layer constitutes an anode electrode of the diode and the second electrode disposed on the exposed top surface of the extended portion of the bottom gallium nitride layer constitutes a cathode electrode of the diode.
T he gallium nitride based semiconductor power device of claim 1 further comprising: an N-type GaN layer disposed on top of an N + + GaN layer with a Schottky metal layer disposed on top of the N type GaN layer and a cathode in electrical connection with the N++ GaN layer; and a plurality of trenches underneath said Schottky metal layer opened in said GaN type layer filled with P-type gallium based epitaxial layer therein to function as a gallium based junction barrier Schot t ky (J 3 S) diode wherein said termination structure is disposed on peripheral area of said N type G aN layer. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: said termination structure further comprises a field plate disposed on top of a portion of said guard ring. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride layer comprises at least two guard rings wherein each of the guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial la y er therein.
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride la y er comprises at least a first and a second guard rings wherein each of the first and second guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial layer therein and wherein the first trench disposed closer to the middle portion of the top gallium nitride layer having a greater trench width than the second trench.
(Withdra w n) The gallium nitride based semiconductor power device of claim 1 further comprising: a first gallium based semiconductor layer having a first dopant concentration disposed on top of a second gallium based semiconductor layer of a different dopant concentration with a Schottky metal layer disposed on top of the first gallium based semiconductor layer and a cat h ode in electrical connection with th e second gallium based semiconductor layer; and a plurality of trenches underneath said Schottky layer opened t illed with P-type gallium based epitaxial layer barrier Schottky (J B S) diode wherein said said first gallium based semiconductor layer. in said first gallium based semiconductor layer therein to function as a gallium based junction termination structure dis p osed on peripheral area of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor power device with trench guard ring termination
GaN-based junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
N-type GaN layer
GaN
P-doped gallium-based epitaxial layer (guard ring fill)
Patent
Atlas literature
Patent
US 10,170,563Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor power device comprising: a-per iphe fal-area-e f a top gallium nitride layer comprises a plurality of guard rings disposed in a peripheral area of the top gallium nitride layer wherein the guard rings comprise a plurality of trenches having substantially a same depth opened in an upper portion of the top gallium nitride layer filled with a P-doped gallium-based epitaxial layer therein and wherein the guard rings surrounding a first electrode of the semiconductor power device feming as comprises a metal layer covering over a middle portion of a top surface of the top gallium nitride layer; and a heavily doped bottom gallium nitride epitaxial layer extending beyond an outer edge of the top gallium nitride layer wherein an extended portion of the bottom gallium nitride epitaxial layer having an exposed top surface not covered by the top gallium nitride layer and wherein a second electrode of the semiconductor power device is disposed directly on the exposed top surface of the extended portion of the bottom gallium nitride layer.
The gallium nitride based semiconductor power device of claim 1 wherein: the semiconductor device constitutes a diode with the first electrode disposed on the top surface of the top gallium nitride layer constitutes an anode electrode of the diode and the second electrode disposed on the exposed top surface of the extended portion of the bottom gallium nitride layer constitutes a cathode electrode of the diode.
T he gallium nitride based semiconductor power device of claim 1 further comprising: an N-type GaN layer disposed on top of an N + + GaN layer with a Schottky metal layer disposed on top of the N type GaN layer and a cathode in electrical connection with the N++ GaN layer; and a plurality of trenches underneath said Schottky metal layer opened in said GaN type layer filled with P-type gallium based epitaxial layer therein to function as a gallium based junction barrier Schot t ky (J 3 S) diode wherein said termination structure is disposed on peripheral area of said N type G aN layer. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: said termination structure further comprises a field plate disposed on top of a portion of said guard ring. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride layer comprises at least two guard rings wherein each of the guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial la y er therein.
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride la y er comprises at least a first and a second guard rings wherein each of the first and second guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial layer therein and wherein the first trench disposed closer to the middle portion of the top gallium nitride layer having a greater trench width than the second trench.
(Withdra w n) The gallium nitride based semiconductor power device of claim 1 further comprising: a first gallium based semiconductor layer having a first dopant concentration disposed on top of a second gallium based semiconductor layer of a different dopant concentration with a Schottky metal layer disposed on top of the first gallium based semiconductor layer and a cat h ode in electrical connection with th e second gallium based semiconductor layer; and a plurality of trenches underneath said Schottky layer opened t illed with P-type gallium based epitaxial layer barrier Schottky (J B S) diode wherein said said first gallium based semiconductor layer. in said first gallium based semiconductor layer therein to function as a gallium based junction termination structure dis p osed on peripheral area of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor power device with trench guard ring termination
GaN-based junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
N-type GaN layer
GaN
P-doped gallium-based epitaxial layer (guard ring fill)
Patent
Atlas literature
Patent
US 10,170,563Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor power device comprising: a-per iphe fal-area-e f a top gallium nitride layer comprises a plurality of guard rings disposed in a peripheral area of the top gallium nitride layer wherein the guard rings comprise a plurality of trenches having substantially a same depth opened in an upper portion of the top gallium nitride layer filled with a P-doped gallium-based epitaxial layer therein and wherein the guard rings surrounding a first electrode of the semiconductor power device feming as comprises a metal layer covering over a middle portion of a top surface of the top gallium nitride layer; and a heavily doped bottom gallium nitride epitaxial layer extending beyond an outer edge of the top gallium nitride layer wherein an extended portion of the bottom gallium nitride epitaxial layer having an exposed top surface not covered by the top gallium nitride layer and wherein a second electrode of the semiconductor power device is disposed directly on the exposed top surface of the extended portion of the bottom gallium nitride layer.
The gallium nitride based semiconductor power device of claim 1 wherein: the semiconductor device constitutes a diode with the first electrode disposed on the top surface of the top gallium nitride layer constitutes an anode electrode of the diode and the second electrode disposed on the exposed top surface of the extended portion of the bottom gallium nitride layer constitutes a cathode electrode of the diode.
T he gallium nitride based semiconductor power device of claim 1 further comprising: an N-type GaN layer disposed on top of an N + + GaN layer with a Schottky metal layer disposed on top of the N type GaN layer and a cathode in electrical connection with the N++ GaN layer; and a plurality of trenches underneath said Schottky metal layer opened in said GaN type layer filled with P-type gallium based epitaxial layer therein to function as a gallium based junction barrier Schot t ky (J 3 S) diode wherein said termination structure is disposed on peripheral area of said N type G aN layer. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: said termination structure further comprises a field plate disposed on top of a portion of said guard ring. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride layer comprises at least two guard rings wherein each of the guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial la y er therein.
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride la y er comprises at least a first and a second guard rings wherein each of the first and second guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial layer therein and wherein the first trench disposed closer to the middle portion of the top gallium nitride layer having a greater trench width than the second trench.
(Withdra w n) The gallium nitride based semiconductor power device of claim 1 further comprising: a first gallium based semiconductor layer having a first dopant concentration disposed on top of a second gallium based semiconductor layer of a different dopant concentration with a Schottky metal layer disposed on top of the first gallium based semiconductor layer and a cat h ode in electrical connection with th e second gallium based semiconductor layer; and a plurality of trenches underneath said Schottky layer opened t illed with P-type gallium based epitaxial layer barrier Schottky (J B S) diode wherein said said first gallium based semiconductor layer. in said first gallium based semiconductor layer therein to function as a gallium based junction termination structure dis p osed on peripheral area of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor power device with trench guard ring termination
GaN-based junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
N-type GaN layer
GaN
P-doped gallium-based epitaxial layer (guard ring fill)
Patent
Atlas literature
Patent
US 10,170,563Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride based semiconductor power device comprising: a-per iphe fal-area-e f a top gallium nitride layer comprises a plurality of guard rings disposed in a peripheral area of the top gallium nitride layer wherein the guard rings comprise a plurality of trenches having substantially a same depth opened in an upper portion of the top gallium nitride layer filled with a P-doped gallium-based epitaxial layer therein and wherein the guard rings surrounding a first electrode of the semiconductor power device feming as comprises a metal layer covering over a middle portion of a top surface of the top gallium nitride layer; and a heavily doped bottom gallium nitride epitaxial layer extending beyond an outer edge of the top gallium nitride layer wherein an extended portion of the bottom gallium nitride epitaxial layer having an exposed top surface not covered by the top gallium nitride layer and wherein a second electrode of the semiconductor power device is disposed directly on the exposed top surface of the extended portion of the bottom gallium nitride layer.
The gallium nitride based semiconductor power device of claim 1 wherein: the semiconductor device constitutes a diode with the first electrode disposed on the top surface of the top gallium nitride layer constitutes an anode electrode of the diode and the second electrode disposed on the exposed top surface of the extended portion of the bottom gallium nitride layer constitutes a cathode electrode of the diode.
T he gallium nitride based semiconductor power device of claim 1 further comprising: an N-type GaN layer disposed on top of an N + + GaN layer with a Schottky metal layer disposed on top of the N type GaN layer and a cathode in electrical connection with the N++ GaN layer; and a plurality of trenches underneath said Schottky metal layer opened in said GaN type layer filled with P-type gallium based epitaxial layer therein to function as a gallium based junction barrier Schot t ky (J 3 S) diode wherein said termination structure is disposed on peripheral area of said N type G aN layer. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: said termination structure further comprises a field plate disposed on top of a portion of said guard ring. withdrawn
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride layer comprises at least two guard rings wherein each of the guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial la y er therein.
The gallium nitride based semiconductor power device of claim 1 wherein: the peripheral area of the top gallium nitride la y er comprises at least a first and a second guard rings wherein each of the first and second guard rings is disposed in a trench filled with the P-doped gallium-based epitaxial layer therein and wherein the first trench disposed closer to the middle portion of the top gallium nitride layer having a greater trench width than the second trench.
(Withdra w n) The gallium nitride based semiconductor power device of claim 1 further comprising: a first gallium based semiconductor layer having a first dopant concentration disposed on top of a second gallium based semiconductor layer of a different dopant concentration with a Schottky metal layer disposed on top of the first gallium based semiconductor layer and a cat h ode in electrical connection with th e second gallium based semiconductor layer; and a plurality of trenches underneath said Schottky layer opened t illed with P-type gallium based epitaxial layer barrier Schottky (J B S) diode wherein said said first gallium based semiconductor layer. in said first gallium based semiconductor layer therein to function as a gallium based junction termination structure dis p osed on peripheral area of withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor power device with trench guard ring termination
GaN-based junction barrier Schottky (JBS) diode
Materials described outside the worked examples.
N-type GaN layer
GaN
P-doped gallium-based epitaxial layer (guard ring fill)
Schottky metal layer
Schottky metal layer
Schottky metal layer
Schottky metal layer