Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view seeing a vapor phase epitaxy apparatus in a lateral direction.
FIG. 2 is a SIMS analysis result and a schematic cross- sectional view of gallium nitride.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material, the apparatus comprising: a reactor vessel; a wafer holder arranged in the reactor vessel; a first raw material gas supply pipe configured to supply a first raw material gas containing gallium into the reactor vessel; a second raw material gas supply pipe configured to supply a second raw material gas, which contains nitrogen and configured to react with the first raw material gas, into the reactor vessel; a third raw material gas supply pipe configured to supply a third raw material gas containing magnesium into the reactor vessel, the third raw material gas supply pipe configured to have a magnesium-based oxide on its supply path; and a first heating unit configured to heat the magnesium-based oxide placed in the third raw material gas supply pipe in a first temperature range.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is a single crystal.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is magnesium oxide with purity of 99% or higher.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first temperature range is a range of 600° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first raw material gas supply pipe is configured capable of arranging a solid unit containing gallium on its supply path, and the gallium nitride vapor phase epitaxy apparatus further comprises a second heating unit configured to heat the arranged solid unit in a second temperature range of 700° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein a hydrogen chloride gas or a chlorine gas is supplied to inlets of the first raw material gas supply pipe and the third raw material gas supply pipe, the first raw material gas containing gallium chloride is discharged from an outlet of the first raw material gas supply pipe, and the third raw material gas containing magnesium chloride is discharged from an outlet of the third raw material gas supply pipe.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the second raw material gas is a gas containing ammonia.
A gallium nitride manufacturing method using vapor phase epitaxy not using organic metal as a gallium raw material, the method comprising: supplying a first raw material gas containing gallium into a reactor vessel in which a substrate is placed; supplying a second raw material gas that contains nitro-gen and configured to react with the first raw material gas into the reactor vessel; and supplying a third raw material gas contains magnesium that was generated using a magnesium-based oxide into the reactor vessel.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is a single crystal.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is magne-sium oxide with purity of 99% or higher. 11 12
The gallium nitride manufacturing method according to claim 8, wherein the third raw material gas is a gas obtained by heating the magnesium-based oxide in a range of 600° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas obtained by heating a solid unit containing gallium in a range of 700° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas containing gallium chloride, the second raw material gas is a gas containing ammonia, and the third raw material gas is a gas containing magnesium chloride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride vapor phase epitaxy apparatus (HVPE)
Materials described outside the worked examples.
magnesium-based oxide
gallium
Ga
gallium nitride
GaN
magnesium oxide
MgO
gallium chloride
GaCl
magnesium chloride
MgCl₂
hydrogen chloride gas
HCl
chlorine gas
Cl₂
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
durability than quartz. Means for improving the magnesium chloride generation efficiency other than the heating temperature of the magne-sium chloride may for example include the following: (1) increasing a surface area by reducing a particle diameter of a bul
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1200 °C | — |
Temperature | 600–1200 °C | — |
Thickness | 1000–1000000 nm | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–10 mm | — |
Thickness | 0.1–10 µm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view seeing a vapor phase epitaxy apparatus in a lateral direction.
FIG. 2 is a SIMS analysis result and a schematic cross- sectional view of gallium nitride.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material, the apparatus comprising: a reactor vessel; a wafer holder arranged in the reactor vessel; a first raw material gas supply pipe configured to supply a first raw material gas containing gallium into the reactor vessel; a second raw material gas supply pipe configured to supply a second raw material gas, which contains nitrogen and configured to react with the first raw material gas, into the reactor vessel; a third raw material gas supply pipe configured to supply a third raw material gas containing magnesium into the reactor vessel, the third raw material gas supply pipe configured to have a magnesium-based oxide on its supply path; and a first heating unit configured to heat the magnesium-based oxide placed in the third raw material gas supply pipe in a first temperature range.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is a single crystal.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is magnesium oxide with purity of 99% or higher.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first temperature range is a range of 600° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first raw material gas supply pipe is configured capable of arranging a solid unit containing gallium on its supply path, and the gallium nitride vapor phase epitaxy apparatus further comprises a second heating unit configured to heat the arranged solid unit in a second temperature range of 700° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein a hydrogen chloride gas or a chlorine gas is supplied to inlets of the first raw material gas supply pipe and the third raw material gas supply pipe, the first raw material gas containing gallium chloride is discharged from an outlet of the first raw material gas supply pipe, and the third raw material gas containing magnesium chloride is discharged from an outlet of the third raw material gas supply pipe.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the second raw material gas is a gas containing ammonia.
A gallium nitride manufacturing method using vapor phase epitaxy not using organic metal as a gallium raw material, the method comprising: supplying a first raw material gas containing gallium into a reactor vessel in which a substrate is placed; supplying a second raw material gas that contains nitro-gen and configured to react with the first raw material gas into the reactor vessel; and supplying a third raw material gas contains magnesium that was generated using a magnesium-based oxide into the reactor vessel.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is a single crystal.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is magne-sium oxide with purity of 99% or higher. 11 12
The gallium nitride manufacturing method according to claim 8, wherein the third raw material gas is a gas obtained by heating the magnesium-based oxide in a range of 600° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas obtained by heating a solid unit containing gallium in a range of 700° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas containing gallium chloride, the second raw material gas is a gas containing ammonia, and the third raw material gas is a gas containing magnesium chloride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride vapor phase epitaxy apparatus (HVPE)
Materials described outside the worked examples.
magnesium-based oxide
gallium
Ga
gallium nitride
GaN
magnesium oxide
MgO
gallium chloride
GaCl
magnesium chloride
MgCl₂
hydrogen chloride gas
HCl
chlorine gas
Cl₂
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
durability than quartz. Means for improving the magnesium chloride generation efficiency other than the heating temperature of the magne-sium chloride may for example include the following: (1) increasing a surface area by reducing a particle diameter of a bul
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1200 °C | — |
Temperature | 600–1200 °C | — |
Thickness | 1000–1000000 nm | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–10 mm | — |
Thickness | 0.1–10 µm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view seeing a vapor phase epitaxy apparatus in a lateral direction.
FIG. 2 is a SIMS analysis result and a schematic cross- sectional view of gallium nitride.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material, the apparatus comprising: a reactor vessel; a wafer holder arranged in the reactor vessel; a first raw material gas supply pipe configured to supply a first raw material gas containing gallium into the reactor vessel; a second raw material gas supply pipe configured to supply a second raw material gas, which contains nitrogen and configured to react with the first raw material gas, into the reactor vessel; a third raw material gas supply pipe configured to supply a third raw material gas containing magnesium into the reactor vessel, the third raw material gas supply pipe configured to have a magnesium-based oxide on its supply path; and a first heating unit configured to heat the magnesium-based oxide placed in the third raw material gas supply pipe in a first temperature range.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is a single crystal.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is magnesium oxide with purity of 99% or higher.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first temperature range is a range of 600° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first raw material gas supply pipe is configured capable of arranging a solid unit containing gallium on its supply path, and the gallium nitride vapor phase epitaxy apparatus further comprises a second heating unit configured to heat the arranged solid unit in a second temperature range of 700° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein a hydrogen chloride gas or a chlorine gas is supplied to inlets of the first raw material gas supply pipe and the third raw material gas supply pipe, the first raw material gas containing gallium chloride is discharged from an outlet of the first raw material gas supply pipe, and the third raw material gas containing magnesium chloride is discharged from an outlet of the third raw material gas supply pipe.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the second raw material gas is a gas containing ammonia.
A gallium nitride manufacturing method using vapor phase epitaxy not using organic metal as a gallium raw material, the method comprising: supplying a first raw material gas containing gallium into a reactor vessel in which a substrate is placed; supplying a second raw material gas that contains nitro-gen and configured to react with the first raw material gas into the reactor vessel; and supplying a third raw material gas contains magnesium that was generated using a magnesium-based oxide into the reactor vessel.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is a single crystal.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is magne-sium oxide with purity of 99% or higher. 11 12
The gallium nitride manufacturing method according to claim 8, wherein the third raw material gas is a gas obtained by heating the magnesium-based oxide in a range of 600° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas obtained by heating a solid unit containing gallium in a range of 700° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas containing gallium chloride, the second raw material gas is a gas containing ammonia, and the third raw material gas is a gas containing magnesium chloride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride vapor phase epitaxy apparatus (HVPE)
Materials described outside the worked examples.
magnesium-based oxide
gallium
Ga
gallium nitride
GaN
magnesium oxide
MgO
gallium chloride
GaCl
magnesium chloride
MgCl₂
hydrogen chloride gas
HCl
chlorine gas
Cl₂
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
durability than quartz. Means for improving the magnesium chloride generation efficiency other than the heating temperature of the magne-sium chloride may for example include the following: (1) increasing a surface area by reducing a particle diameter of a bul
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1200 °C | — |
Temperature | 600–1200 °C | — |
Thickness | 1000–1000000 nm | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–10 mm | — |
Thickness | 0.1–10 µm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic cross-sectional view seeing a vapor phase epitaxy apparatus in a lateral direction.
FIG. 2 is a SIMS analysis result and a schematic cross- sectional view of gallium nitride.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride vapor phase epitaxy apparatus used in vapor phase epitaxy not using organic metal as a gallium raw material, the apparatus comprising: a reactor vessel; a wafer holder arranged in the reactor vessel; a first raw material gas supply pipe configured to supply a first raw material gas containing gallium into the reactor vessel; a second raw material gas supply pipe configured to supply a second raw material gas, which contains nitrogen and configured to react with the first raw material gas, into the reactor vessel; a third raw material gas supply pipe configured to supply a third raw material gas containing magnesium into the reactor vessel, the third raw material gas supply pipe configured to have a magnesium-based oxide on its supply path; and a first heating unit configured to heat the magnesium-based oxide placed in the third raw material gas supply pipe in a first temperature range.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is a single crystal.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the magnesium-based oxide is magnesium oxide with purity of 99% or higher.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first temperature range is a range of 600° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the first raw material gas supply pipe is configured capable of arranging a solid unit containing gallium on its supply path, and the gallium nitride vapor phase epitaxy apparatus further comprises a second heating unit configured to heat the arranged solid unit in a second temperature range of 700° C. to 1200° C.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein a hydrogen chloride gas or a chlorine gas is supplied to inlets of the first raw material gas supply pipe and the third raw material gas supply pipe, the first raw material gas containing gallium chloride is discharged from an outlet of the first raw material gas supply pipe, and the third raw material gas containing magnesium chloride is discharged from an outlet of the third raw material gas supply pipe.
The gallium nitride vapor phase epitaxy apparatus according to claim 1, wherein the second raw material gas is a gas containing ammonia.
A gallium nitride manufacturing method using vapor phase epitaxy not using organic metal as a gallium raw material, the method comprising: supplying a first raw material gas containing gallium into a reactor vessel in which a substrate is placed; supplying a second raw material gas that contains nitro-gen and configured to react with the first raw material gas into the reactor vessel; and supplying a third raw material gas contains magnesium that was generated using a magnesium-based oxide into the reactor vessel.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is a single crystal.
The gallium nitride manufacturing method according to claim 8, wherein the magnesium-based oxide is magne-sium oxide with purity of 99% or higher. 11 12
The gallium nitride manufacturing method according to claim 8, wherein the third raw material gas is a gas obtained by heating the magnesium-based oxide in a range of 600° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas obtained by heating a solid unit containing gallium in a range of 700° C. to 1200° C.
The gallium nitride manufacturing method according to claim 8, wherein the first raw material gas is a gas containing gallium chloride, the second raw material gas is a gas containing ammonia, and the third raw material gas is a gas containing magnesium chloride. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride vapor phase epitaxy apparatus (HVPE)
Materials described outside the worked examples.
magnesium-based oxide
gallium
Ga
gallium nitride
GaN
magnesium oxide
MgO
gallium chloride
GaCl
magnesium chloride
MgCl₂
hydrogen chloride gas
HCl
chlorine gas
Cl₂
ammonia
NH₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 3 is a photoluminescence (PL) spectrum diagram.
durability than quartz. Means for improving the magnesium chloride generation efficiency other than the heating temperature of the magne-sium chloride may for example include the following: (1) increasing a surface area by reducing a particle diameter of a bul
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 700–1200 °C | — |
Temperature | 600–1200 °C | — |
Thickness | 1000–1000000 nm | — |
Thickness | 0.1–10 cm | — |
Thickness | 1–10 mm | — |
Thickness | 0.1–10 µm | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Cited non-patent literature · 2
Related documents with shared materials, methods, properties, or citations.
