Patent
US 12,028,031 B2GALLIUM NITRIDE OPERATIONAL AMPLIFIER
Cher-Ming Tan, Vimal Kant Pandey
CHANG GUNG UNIVERSITY, Taoyuan (TW)·Jul. 2, 2024·US
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US 12,028,031 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the block diagram for the gallium nitride operational amplifier of the present invention.
FIG. 2 shows the illustration for the gallium nitride operational amplifier of the present invention.
FIG. 3 shows the simulation result for the gallium nitride operational amplifier of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride operational amplifier, comprising: a first amplifier, having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, wherein said first input terminal input-ting a first input voltage, said second input terminal inputting a second input voltage, a first amplifier ampli-fying a difference of said first input voltage and said second input voltage, said first output terminal output-ting a first output voltage, and said second output terminal outputting a second output voltage; a second amplifier connecting said first amplifier, said second amplifier having a third input terminal, and a fourth input terminal, said third output terminal, said third input terminal receiving said first output voltage, said fourth input terminal receiving said second output voltage, said second amplifier amplifying said differ-ence of said first output voltage, and said second output voltage, said third output terminal outputting a third output voltage: a voltage buffer device connecting said second amplifier, said voltage buffer device having a fifth input terminal and a fourth output terminal, said fifth input terminal inputting said third output voltage, and said fourth output terminal outputting a fourth output voltage: a third amplifier connecting said voltage buffer device, said third amplifier having a sixth input terminal and a fifth output terminal, said sixth input terminal inputting said fourth output voltage, said fifth output terminal outputting a fifth output voltage: and a current mirror device connects said first amplifier, said second amplifier, and said voltage buffer device. 7 8
The gallium nitride operational amplifier according to 10. The gallium nitride operational amplifier according to claim 1, wherein said first amplifier comprises a dual-input claim 1, wherein said second amplifier comprises a fifth balanced output differential amplifier. transistor, a sixth transistor, and a fourth resistor, a gate
The gallium nitride operational amplifier according to electrode of said fifth transistor, a terminal of the first claim 1, wherein said first input terminal and said second 5 resistor being connected, a source electrode of said fifth input terminal of said first amplifier comprise a first differ-transistor being connected to a source electrode of said sixth ential input, said first differential input having a positive transistor, a drain electrode of said sixth transistor being input and a negative input, said first output terminal and said connected to another terminal of said fourth resistor. second output terminal being a first differential output, said
The gallium nitride operational amplifier according to first differential output having a positive output and a 10 claim 1, wherein said voltage buffer device comprises an negative output. eighth transistor, and a first capacitor, a gate electrode of said
The gallium nitride operational amplifier according to claim 1, wherein a gain of said gallium nitride operational claim 1, wherein said third amplifier comprises a cascaded amplifier being 70 dB, a slew rate being 20V/µs, and said common source amplifier with degeneration. common mode rejection ratio is 84.2 dB.
The gallium nitride operational amplifier according to
Layer stacks claimed or described, ordered top of device to substrate.
Gallium Nitride Operational Amplifier
Materials described outside the worked examples.
Gallium Nitride (GaN)
GaN
Enhancement-Mode GaN High Electron Mobility Transistor (E-mode GaN HEMT)
Measurements and analyses referenced in the patent, with their drawing references.
durability of the whole electronic system can be increased. The present invention proposes a gallium nitride operational amplifier, so that the operational ampli-fier can be used in the harsh working conditions. The corresponding electronic device system can pos
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gain of gallium nitride operational amplifier | 70 dB | GaN |
Slew rate of gallium nitride operational amplifier |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,028,031 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the block diagram for the gallium nitride operational amplifier of the present invention.
FIG. 2 shows the illustration for the gallium nitride operational amplifier of the present invention.
FIG. 3 shows the simulation result for the gallium nitride operational amplifier of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride operational amplifier, comprising: a first amplifier, having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, wherein said first input terminal input-ting a first input voltage, said second input terminal inputting a second input voltage, a first amplifier ampli-fying a difference of said first input voltage and said second input voltage, said first output terminal output-ting a first output voltage, and said second output terminal outputting a second output voltage; a second amplifier connecting said first amplifier, said second amplifier having a third input terminal, and a fourth input terminal, said third output terminal, said third input terminal receiving said first output voltage, said fourth input terminal receiving said second output voltage, said second amplifier amplifying said differ-ence of said first output voltage, and said second output voltage, said third output terminal outputting a third output voltage: a voltage buffer device connecting said second amplifier, said voltage buffer device having a fifth input terminal and a fourth output terminal, said fifth input terminal inputting said third output voltage, and said fourth output terminal outputting a fourth output voltage: a third amplifier connecting said voltage buffer device, said third amplifier having a sixth input terminal and a fifth output terminal, said sixth input terminal inputting said fourth output voltage, said fifth output terminal outputting a fifth output voltage: and a current mirror device connects said first amplifier, said second amplifier, and said voltage buffer device. 7 8
The gallium nitride operational amplifier according to 10. The gallium nitride operational amplifier according to claim 1, wherein said first amplifier comprises a dual-input claim 1, wherein said second amplifier comprises a fifth balanced output differential amplifier. transistor, a sixth transistor, and a fourth resistor, a gate
The gallium nitride operational amplifier according to electrode of said fifth transistor, a terminal of the first claim 1, wherein said first input terminal and said second 5 resistor being connected, a source electrode of said fifth input terminal of said first amplifier comprise a first differ-transistor being connected to a source electrode of said sixth ential input, said first differential input having a positive transistor, a drain electrode of said sixth transistor being input and a negative input, said first output terminal and said connected to another terminal of said fourth resistor. second output terminal being a first differential output, said
The gallium nitride operational amplifier according to first differential output having a positive output and a 10 claim 1, wherein said voltage buffer device comprises an negative output. eighth transistor, and a first capacitor, a gate electrode of said
The gallium nitride operational amplifier according to claim 1, wherein a gain of said gallium nitride operational claim 1, wherein said third amplifier comprises a cascaded amplifier being 70 dB, a slew rate being 20V/µs, and said common source amplifier with degeneration. common mode rejection ratio is 84.2 dB.
The gallium nitride operational amplifier according to
Layer stacks claimed or described, ordered top of device to substrate.
Gallium Nitride Operational Amplifier
Materials described outside the worked examples.
Gallium Nitride (GaN)
GaN
Enhancement-Mode GaN High Electron Mobility Transistor (E-mode GaN HEMT)
Measurements and analyses referenced in the patent, with their drawing references.
durability of the whole electronic system can be increased. The present invention proposes a gallium nitride operational amplifier, so that the operational ampli-fier can be used in the harsh working conditions. The corresponding electronic device system can pos
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gain of gallium nitride operational amplifier | 70 dB | GaN |
Slew rate of gallium nitride operational amplifier |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,028,031 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the block diagram for the gallium nitride operational amplifier of the present invention.
FIG. 2 shows the illustration for the gallium nitride operational amplifier of the present invention.
FIG. 3 shows the simulation result for the gallium nitride operational amplifier of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride operational amplifier, comprising: a first amplifier, having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, wherein said first input terminal input-ting a first input voltage, said second input terminal inputting a second input voltage, a first amplifier ampli-fying a difference of said first input voltage and said second input voltage, said first output terminal output-ting a first output voltage, and said second output terminal outputting a second output voltage; a second amplifier connecting said first amplifier, said second amplifier having a third input terminal, and a fourth input terminal, said third output terminal, said third input terminal receiving said first output voltage, said fourth input terminal receiving said second output voltage, said second amplifier amplifying said differ-ence of said first output voltage, and said second output voltage, said third output terminal outputting a third output voltage: a voltage buffer device connecting said second amplifier, said voltage buffer device having a fifth input terminal and a fourth output terminal, said fifth input terminal inputting said third output voltage, and said fourth output terminal outputting a fourth output voltage: a third amplifier connecting said voltage buffer device, said third amplifier having a sixth input terminal and a fifth output terminal, said sixth input terminal inputting said fourth output voltage, said fifth output terminal outputting a fifth output voltage: and a current mirror device connects said first amplifier, said second amplifier, and said voltage buffer device. 7 8
The gallium nitride operational amplifier according to 10. The gallium nitride operational amplifier according to claim 1, wherein said first amplifier comprises a dual-input claim 1, wherein said second amplifier comprises a fifth balanced output differential amplifier. transistor, a sixth transistor, and a fourth resistor, a gate
The gallium nitride operational amplifier according to electrode of said fifth transistor, a terminal of the first claim 1, wherein said first input terminal and said second 5 resistor being connected, a source electrode of said fifth input terminal of said first amplifier comprise a first differ-transistor being connected to a source electrode of said sixth ential input, said first differential input having a positive transistor, a drain electrode of said sixth transistor being input and a negative input, said first output terminal and said connected to another terminal of said fourth resistor. second output terminal being a first differential output, said
The gallium nitride operational amplifier according to first differential output having a positive output and a 10 claim 1, wherein said voltage buffer device comprises an negative output. eighth transistor, and a first capacitor, a gate electrode of said
The gallium nitride operational amplifier according to claim 1, wherein a gain of said gallium nitride operational claim 1, wherein said third amplifier comprises a cascaded amplifier being 70 dB, a slew rate being 20V/µs, and said common source amplifier with degeneration. common mode rejection ratio is 84.2 dB.
The gallium nitride operational amplifier according to
Layer stacks claimed or described, ordered top of device to substrate.
Gallium Nitride Operational Amplifier
Materials described outside the worked examples.
Gallium Nitride (GaN)
GaN
Enhancement-Mode GaN High Electron Mobility Transistor (E-mode GaN HEMT)
Measurements and analyses referenced in the patent, with their drawing references.
durability of the whole electronic system can be increased. The present invention proposes a gallium nitride operational amplifier, so that the operational ampli-fier can be used in the harsh working conditions. The corresponding electronic device system can pos
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gain of gallium nitride operational amplifier | 70 dB | GaN |
Slew rate of gallium nitride operational amplifier |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,028,031 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 shows the block diagram for the gallium nitride operational amplifier of the present invention.
FIG. 2 shows the illustration for the gallium nitride operational amplifier of the present invention.
FIG. 3 shows the simulation result for the gallium nitride operational amplifier of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride operational amplifier, comprising: a first amplifier, having a first input terminal, a second input terminal, a first output terminal, and a second output terminal, wherein said first input terminal input-ting a first input voltage, said second input terminal inputting a second input voltage, a first amplifier ampli-fying a difference of said first input voltage and said second input voltage, said first output terminal output-ting a first output voltage, and said second output terminal outputting a second output voltage; a second amplifier connecting said first amplifier, said second amplifier having a third input terminal, and a fourth input terminal, said third output terminal, said third input terminal receiving said first output voltage, said fourth input terminal receiving said second output voltage, said second amplifier amplifying said differ-ence of said first output voltage, and said second output voltage, said third output terminal outputting a third output voltage: a voltage buffer device connecting said second amplifier, said voltage buffer device having a fifth input terminal and a fourth output terminal, said fifth input terminal inputting said third output voltage, and said fourth output terminal outputting a fourth output voltage: a third amplifier connecting said voltage buffer device, said third amplifier having a sixth input terminal and a fifth output terminal, said sixth input terminal inputting said fourth output voltage, said fifth output terminal outputting a fifth output voltage: and a current mirror device connects said first amplifier, said second amplifier, and said voltage buffer device. 7 8
The gallium nitride operational amplifier according to 10. The gallium nitride operational amplifier according to claim 1, wherein said first amplifier comprises a dual-input claim 1, wherein said second amplifier comprises a fifth balanced output differential amplifier. transistor, a sixth transistor, and a fourth resistor, a gate
The gallium nitride operational amplifier according to electrode of said fifth transistor, a terminal of the first claim 1, wherein said first input terminal and said second 5 resistor being connected, a source electrode of said fifth input terminal of said first amplifier comprise a first differ-transistor being connected to a source electrode of said sixth ential input, said first differential input having a positive transistor, a drain electrode of said sixth transistor being input and a negative input, said first output terminal and said connected to another terminal of said fourth resistor. second output terminal being a first differential output, said
The gallium nitride operational amplifier according to first differential output having a positive output and a 10 claim 1, wherein said voltage buffer device comprises an negative output. eighth transistor, and a first capacitor, a gate electrode of said
The gallium nitride operational amplifier according to claim 1, wherein a gain of said gallium nitride operational claim 1, wherein said third amplifier comprises a cascaded amplifier being 70 dB, a slew rate being 20V/µs, and said common source amplifier with degeneration. common mode rejection ratio is 84.2 dB.
The gallium nitride operational amplifier according to
Layer stacks claimed or described, ordered top of device to substrate.
Gallium Nitride Operational Amplifier
Materials described outside the worked examples.
Gallium Nitride (GaN)
GaN
Enhancement-Mode GaN High Electron Mobility Transistor (E-mode GaN HEMT)
Measurements and analyses referenced in the patent, with their drawing references.
durability of the whole electronic system can be increased. The present invention proposes a gallium nitride operational amplifier, so that the operational ampli-fier can be used in the harsh working conditions. The corresponding electronic device system can pos
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Gain of gallium nitride operational amplifier | 70 dB | GaN |
Slew rate of gallium nitride operational amplifier |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 3
Cited non-patent literature · 1
Related documents with shared materials, methods, properties, or citations.
| 20 V/µs |
GaN |
Common mode rejection ratio of gallium nitride operational amplifier | 84.2 dB | GaN |
| 20 V/µs |
GaN |
Common mode rejection ratio of gallium nitride operational amplifier | 84.2 dB | GaN |
| 20 V/µs |
GaN |
Common mode rejection ratio of gallium nitride operational amplifier | 84.2 dB | GaN |
| 20 V/µs |
GaN |
Common mode rejection ratio of gallium nitride operational amplifier | 84.2 dB | GaN |