Patent
US 10,847,947Patent
Atlas literature
Patent
US 10,847,947Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode. [0011]
FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present …
FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A driver circuit for a load having a first terminal connected to a first supply voltage and a second terminal, comprising: a first FET connected in a common-source configuration having a drain connected to the second terminal of the load, a source connected to ground, and a gate for receiving a gate drive current; a second FET connected in a source-follower configuration having a drain connected to the second terminal of the load, a source connected to the gate of the first FET, and a gate; and a pre-driver powered by a second supply voltage and having an input for receiving a control signal and an output connected to the gate of the second FET, such that the pre- driver drives the second FET in accordance with the control signal, and the gate drive current for the first FET is provided by the first supply voltage and flows through the load and through the second FET.
The driver circuit of claim 1, wherein the load comprises a laser diode.
The driver circuit of claim 1, wherein the first FET is an enhancement mode GaN FET and the second FET is an enhancement mode GaN FET.
Layer stacks claimed or described, ordered top of device to substrate.
GaN laser diode driver circuit with gate current reuse
GaN laser diode driver circuit with current mirror
Materials described outside the worked examples.
laser diode
enhancement mode GaN FET
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,947Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode. [0011]
FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present …
FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A driver circuit for a load having a first terminal connected to a first supply voltage and a second terminal, comprising: a first FET connected in a common-source configuration having a drain connected to the second terminal of the load, a source connected to ground, and a gate for receiving a gate drive current; a second FET connected in a source-follower configuration having a drain connected to the second terminal of the load, a source connected to the gate of the first FET, and a gate; and a pre-driver powered by a second supply voltage and having an input for receiving a control signal and an output connected to the gate of the second FET, such that the pre- driver drives the second FET in accordance with the control signal, and the gate drive current for the first FET is provided by the first supply voltage and flows through the load and through the second FET.
The driver circuit of claim 1, wherein the load comprises a laser diode.
The driver circuit of claim 1, wherein the first FET is an enhancement mode GaN FET and the second FET is an enhancement mode GaN FET.
Layer stacks claimed or described, ordered top of device to substrate.
GaN laser diode driver circuit with gate current reuse
GaN laser diode driver circuit with current mirror
Materials described outside the worked examples.
laser diode
enhancement mode GaN FET
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,947Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode. [0011]
FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present …
FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A driver circuit for a load having a first terminal connected to a first supply voltage and a second terminal, comprising: a first FET connected in a common-source configuration having a drain connected to the second terminal of the load, a source connected to ground, and a gate for receiving a gate drive current; a second FET connected in a source-follower configuration having a drain connected to the second terminal of the load, a source connected to the gate of the first FET, and a gate; and a pre-driver powered by a second supply voltage and having an input for receiving a control signal and an output connected to the gate of the second FET, such that the pre- driver drives the second FET in accordance with the control signal, and the gate drive current for the first FET is provided by the first supply voltage and flows through the load and through the second FET.
The driver circuit of claim 1, wherein the load comprises a laser diode.
The driver circuit of claim 1, wherein the first FET is an enhancement mode GaN FET and the second FET is an enhancement mode GaN FET.
Layer stacks claimed or described, ordered top of device to substrate.
GaN laser diode driver circuit with gate current reuse
GaN laser diode driver circuit with current mirror
Materials described outside the worked examples.
laser diode
enhancement mode GaN FET
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,847,947Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates a schematic of a conventional circuit for driving a laser diode. [0011]
FIGS. 2A and 2B illustrate schematics of the driver circuit of the present invention with gate current reuse according to a first embodiment of the present …
FIG. 3 illustrates a schematic the driver circuit of the present invention with gate current reuse according to a second embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A driver circuit for a load having a first terminal connected to a first supply voltage and a second terminal, comprising: a first FET connected in a common-source configuration having a drain connected to the second terminal of the load, a source connected to ground, and a gate for receiving a gate drive current; a second FET connected in a source-follower configuration having a drain connected to the second terminal of the load, a source connected to the gate of the first FET, and a gate; and a pre-driver powered by a second supply voltage and having an input for receiving a control signal and an output connected to the gate of the second FET, such that the pre- driver drives the second FET in accordance with the control signal, and the gate drive current for the first FET is provided by the first supply voltage and flows through the load and through the second FET.
The driver circuit of claim 1, wherein the load comprises a laser diode.
The driver circuit of claim 1, wherein the first FET is an enhancement mode GaN FET and the second FET is an enhancement mode GaN FET.
Layer stacks claimed or described, ordered top of device to substrate.
GaN laser diode driver circuit with gate current reuse
GaN laser diode driver circuit with current mirror
Materials described outside the worked examples.
laser diode
enhancement mode GaN FET
Related documents with shared materials, methods, properties, or citations.
LASER SLICER OF CRYSTAL INGOTS AND A METHOD OF SLICING GALLIUM NITRIDE INGOTS USING A LASER SLICER
LASER SLICER OF CRYSTAL INGOTS AND A METHOD OF SLICING GALLIUM NITRIDE INGOTS USING A LASER SLICER
LASER SLICER OF CRYSTAL INGOTS AND A METHOD OF SLICING GALLIUM NITRIDE INGOTS USING A LASER SLICER
LASER SLICER OF CRYSTAL INGOTS AND A METHOD OF SLICING GALLIUM NITRIDE INGOTS USING A LASER SLICER
