Patent
US 8,477,818OF THE I NVENTION
Tetsuya Kumano
US
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Patent
Atlas literature
Patent
US 8,477,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based semiconductor laser device comprising: an n-type cladding layer of an n-type GaN-based semiconductor; 5 a first light guide layer of a GaN-based semiconductor provided on the n-type cladding layer; an active layer of a GaN-based semiconductor provided on the first light guide layer; a second light guide layer of a GaN-based semiconductor 10 provided on the active layer; and a p-type cladding layer of a p-type GaN-based semiconductor provided on the second light guide layer, wherein a lasing wavelength of the active layer is not less than 400 nm and not more than 550 nm, 15 wherein the first and second light guide layers both contain indium, wherein each of indium compositions of the first and second light guide layers is not less than 2% and not more than 6%, wherein a film thickness of the first light guide layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the first light guide layer and a film thickness of the second light guide layer, and wherein the first light guide layer and the second light guide layer are in contact with the active layer.
2. The GaN-based semiconductor laser device according to claim 1, 54 FP₁₁ -0770- OO US-SE wherein the n-type cladding layer is InXAlyGa1s-y N (0 < x < 0.05 and 0 < y < 0.20), and wherein the p-type cladding layer is InXAlyGals-y N (0 < x < 0.05 and 0 < y < 0.20).
The method according to claim 14, wherein layer is not less than 2% and not more than 4.5%. the indium composition of the first light guide the indium composition of the second light guide the indium composition of the second light guide
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor laser device
Materials described outside the worked examples.
GaN-based semiconductor (active layer)
n-type GaN-based semiconductor cladding (InxAlyGa₁-x-yN)
InxAlyGa₁-x-yN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Lasing Wavelength Range | 400–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide | 2–6 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,477,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based semiconductor laser device comprising: an n-type cladding layer of an n-type GaN-based semiconductor; 5 a first light guide layer of a GaN-based semiconductor provided on the n-type cladding layer; an active layer of a GaN-based semiconductor provided on the first light guide layer; a second light guide layer of a GaN-based semiconductor 10 provided on the active layer; and a p-type cladding layer of a p-type GaN-based semiconductor provided on the second light guide layer, wherein a lasing wavelength of the active layer is not less than 400 nm and not more than 550 nm, 15 wherein the first and second light guide layers both contain indium, wherein each of indium compositions of the first and second light guide layers is not less than 2% and not more than 6%, wherein a film thickness of the first light guide layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the first light guide layer and a film thickness of the second light guide layer, and wherein the first light guide layer and the second light guide layer are in contact with the active layer.
2. The GaN-based semiconductor laser device according to claim 1, 54 FP₁₁ -0770- OO US-SE wherein the n-type cladding layer is InXAlyGa1s-y N (0 < x < 0.05 and 0 < y < 0.20), and wherein the p-type cladding layer is InXAlyGals-y N (0 < x < 0.05 and 0 < y < 0.20).
The method according to claim 14, wherein layer is not less than 2% and not more than 4.5%. the indium composition of the first light guide the indium composition of the second light guide the indium composition of the second light guide
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor laser device
Materials described outside the worked examples.
GaN-based semiconductor (active layer)
n-type GaN-based semiconductor cladding (InxAlyGa₁-x-yN)
InxAlyGa₁-x-yN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Lasing Wavelength Range | 400–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide | 2–6 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,477,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based semiconductor laser device comprising: an n-type cladding layer of an n-type GaN-based semiconductor; 5 a first light guide layer of a GaN-based semiconductor provided on the n-type cladding layer; an active layer of a GaN-based semiconductor provided on the first light guide layer; a second light guide layer of a GaN-based semiconductor 10 provided on the active layer; and a p-type cladding layer of a p-type GaN-based semiconductor provided on the second light guide layer, wherein a lasing wavelength of the active layer is not less than 400 nm and not more than 550 nm, 15 wherein the first and second light guide layers both contain indium, wherein each of indium compositions of the first and second light guide layers is not less than 2% and not more than 6%, wherein a film thickness of the first light guide layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the first light guide layer and a film thickness of the second light guide layer, and wherein the first light guide layer and the second light guide layer are in contact with the active layer.
2. The GaN-based semiconductor laser device according to claim 1, 54 FP₁₁ -0770- OO US-SE wherein the n-type cladding layer is InXAlyGa1s-y N (0 < x < 0.05 and 0 < y < 0.20), and wherein the p-type cladding layer is InXAlyGals-y N (0 < x < 0.05 and 0 < y < 0.20).
The method according to claim 14, wherein layer is not less than 2% and not more than 4.5%. the indium composition of the first light guide the indium composition of the second light guide the indium composition of the second light guide
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor laser device
Materials described outside the worked examples.
GaN-based semiconductor (active layer)
n-type GaN-based semiconductor cladding (InxAlyGa₁-x-yN)
InxAlyGa₁-x-yN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Lasing Wavelength Range | 400–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide | 2–6 % |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,477,818Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium nitride (GaN)-based semiconductor laser device comprising: an n-type cladding layer of an n-type GaN-based semiconductor; 5 a first light guide layer of a GaN-based semiconductor provided on the n-type cladding layer; an active layer of a GaN-based semiconductor provided on the first light guide layer; a second light guide layer of a GaN-based semiconductor 10 provided on the active layer; and a p-type cladding layer of a p-type GaN-based semiconductor provided on the second light guide layer, wherein a lasing wavelength of the active layer is not less than 400 nm and not more than 550 nm, 15 wherein the first and second light guide layers both contain indium, wherein each of indium compositions of the first and second light guide layers is not less than 2% and not more than 6%, wherein a film thickness of the first light guide layer is in the range of not less than 65% and not more than 85% of a total of the film thickness of the first light guide layer and a film thickness of the second light guide layer, and wherein the first light guide layer and the second light guide layer are in contact with the active layer.
2. The GaN-based semiconductor laser device according to claim 1, 54 FP₁₁ -0770- OO US-SE wherein the n-type cladding layer is InXAlyGa1s-y N (0 < x < 0.05 and 0 < y < 0.20), and wherein the p-type cladding layer is InXAlyGals-y N (0 < x < 0.05 and 0 < y < 0.20).
The method according to claim 14, wherein layer is not less than 2% and not more than 4.5%. the indium composition of the first light guide the indium composition of the second light guide the indium composition of the second light guide
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor laser device
Materials described outside the worked examples.
GaN-based semiconductor (active layer)
n-type GaN-based semiconductor cladding (InxAlyGa₁-x-yN)
InxAlyGa₁-x-yN
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Lasing Wavelength Range | 400–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide | 2–6 % |
Related documents with shared materials, methods, properties, or citations.
InGaN first light guide layer (n-side)
InGaN second light guide layer (p-side)
Indium Composition Range Second Light Guide | 2–6 % | InGaN second light guide layer (p-side) |
Lasing Wavelength Range Green | 480–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide Narrower | 2–5 % | InGaN first light guide layer (n-side) |
Indium Composition Range First Light Guide Claim26 | 2–4.5 % | InGaN first light guide layer (n-side) |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 480 nm | — |
Thickness | ≤ 510 nm | — |
Thickness | ≤ 240 nm | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 540 nm | — |
Thickness | ≥ 280 nm | — |
Temperature | ≥ 300 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≤ 520 nm | — |
GALLIUM NITRIDE BASED LASER DAZZLING METHOD
InGaN first light guide layer (n-side)
InGaN second light guide layer (p-side)
Indium Composition Range Second Light Guide | 2–6 % | InGaN second light guide layer (p-side) |
Lasing Wavelength Range Green | 480–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide Narrower | 2–5 % | InGaN first light guide layer (n-side) |
Indium Composition Range First Light Guide Claim26 | 2–4.5 % | InGaN first light guide layer (n-side) |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 480 nm | — |
Thickness | ≤ 510 nm | — |
Thickness | ≤ 240 nm | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 540 nm | — |
Thickness | ≥ 280 nm | — |
Temperature | ≥ 300 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≤ 520 nm | — |
GALLIUM NITRIDE BASED LASER DAZZLING METHOD
InGaN first light guide layer (n-side)
InGaN second light guide layer (p-side)
Indium Composition Range Second Light Guide | 2–6 % | InGaN second light guide layer (p-side) |
Lasing Wavelength Range Green | 480–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide Narrower | 2–5 % | InGaN first light guide layer (n-side) |
Indium Composition Range First Light Guide Claim26 | 2–4.5 % | InGaN first light guide layer (n-side) |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 480 nm | — |
Thickness | ≤ 510 nm | — |
Thickness | ≤ 240 nm | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 540 nm | — |
Thickness | ≥ 280 nm | — |
Temperature | ≥ 300 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≤ 520 nm | — |
GALLIUM NITRIDE BASED LASER DAZZLING METHOD
InGaN first light guide layer (n-side)
InGaN second light guide layer (p-side)
Indium Composition Range Second Light Guide | 2–6 % | InGaN second light guide layer (p-side) |
Lasing Wavelength Range Green | 480–550 nm | GaN-based semiconductor (active layer) |
Indium Composition Range First Light Guide Narrower | 2–5 % | InGaN first light guide layer (n-side) |
Indium Composition Range First Light Guide Claim26 | 2–4.5 % | InGaN first light guide layer (n-side) |
Thickness | ≤ 400 nm | — |
Thickness | ≤ 480 nm | — |
Thickness | ≤ 510 nm | — |
Thickness | ≤ 240 nm | — |
Temperature | ≤ 150 °C | — |
Thickness | ≥ 15 nm | — |
Thickness | ≥ 550 nm | — |
Thickness | ≥ 540 nm | — |
Thickness | ≥ 280 nm | — |
Temperature | ≥ 300 °C | — |
Thickness | ≥ 1 nm | — |
Thickness | ≤ 520 nm | — |
GALLIUM NITRIDE BASED LASER DAZZLING METHOD