Patent
US 8,878,341GRAPHENE-BASED COMPOSITE MATERIALS, METHODS OF MANUFACTURE AND APPLICATIONS THEREOF
Mahmoud N. Almadhoun
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,878,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS 1 A, 1B, and I C show a capacitor having a dielectric layer disposed between bottom and top electrodes,
FIG 2 shows an all-organic capacitor device,
FIG 3 shows an embodiment of an electric component with an organic in terconnect,
FIG 4A illustrates dielectric permittivity (left axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/hydraz in e-reduced graphene oxide (HZ-rGO) composite as a function of graphene load in g (wt %), measured at 1 kHz and room temperature,
FIG 4B illustrates the dependence of dielectric permittivity on the frequency for P(VDF-TrFE- CFE)/HZ-rGO with 2 wt % HZ-rGO load in g at room temperature,
FIGS 5A and 5B i llustrate dielectric permittivity (lef t axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/HZ-rGO composite as a function of HZ-rGO loading (wt %), measured at 1 kHz and room temperature using commercial graphene nanoplatelets (
FIG 5 B),
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 8 is a bar chart compar in g the maximum dielectric permittivity and correspond in g dielectric loss reported in the li terature us in g P(VDF-TrFE-CFE) polymer as a matrix in percolative composites, 3 1 2T& a mp;10026-US-NP (SB₄₀₀₀₇US₂)
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
FIG 12 shows the electrostatic potential distribution us in g density functional theory to describe the in fluence of in terfacial charge distribution a) without, and b) with pyrazole group on the edges of graphene
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂) AMENDMENTS TO THE CLAIMS 1. (Cu rr ently Amended) A composite material comprising a polymeric material; and a hydrazine-reduced graphene oxide, wherein the polymeric material is an organic relaxor ferroelectric material comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the polymeric material comprises polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the weight ratio of the relaxor ferroelectric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
The composite material of claim 1, wherein the polymeric material comprises a poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), and the weight ratio of the polymeric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
A capacitor device comprising: a substrate; a first electrode disposed on the substrate; a dielectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
A method of making a capacitor device, the method comprising: disposing a first electrode on a substrate; disposing a dielectric layer on the first electrode; and disposing a second electrode on the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
An electric component comprising an interconnect that electrically connects at least two elements of the electrical device, wherein the elements of the electrical device comprises or in contact with a dielectric layer comprising the composite material of claim 1.
. canceled
A method of making a composite material comprising contacting a hydrazine-reduced graphene oxide with a relaxor fe rr oelectric material in the presence of a solvent, or contacting graphene oxide with a polymeric material in the presence of a solvent, then reducing graphene oxide with hydrazine. 3 1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂)
Layer stacks claimed or described, ordered top of device to substrate.
capacitor device
electric component with interconnect
Materials described outside the worked examples.
organic relaxor ferroelectric material (fluorinated polymer/copolymer)
hydrazine-reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–1500 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS 1 A, 1B, and I C show a capacitor having a dielectric layer disposed between bottom and top electrodes,
FIG 2 shows an all-organic capacitor device,
FIG 3 shows an embodiment of an electric component with an organic in terconnect,
FIG 4A illustrates dielectric permittivity (left axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/hydraz in e-reduced graphene oxide (HZ-rGO) composite as a function of graphene load in g (wt %), measured at 1 kHz and room temperature,
FIG 4B illustrates the dependence of dielectric permittivity on the frequency for P(VDF-TrFE- CFE)/HZ-rGO with 2 wt % HZ-rGO load in g at room temperature,
FIGS 5A and 5B i llustrate dielectric permittivity (lef t axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/HZ-rGO composite as a function of HZ-rGO loading (wt %), measured at 1 kHz and room temperature using commercial graphene nanoplatelets (
FIG 5 B),
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 8 is a bar chart compar in g the maximum dielectric permittivity and correspond in g dielectric loss reported in the li terature us in g P(VDF-TrFE-CFE) polymer as a matrix in percolative composites, 3 1 2T& a mp;10026-US-NP (SB₄₀₀₀₇US₂)
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
FIG 12 shows the electrostatic potential distribution us in g density functional theory to describe the in fluence of in terfacial charge distribution a) without, and b) with pyrazole group on the edges of graphene
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂) AMENDMENTS TO THE CLAIMS 1. (Cu rr ently Amended) A composite material comprising a polymeric material; and a hydrazine-reduced graphene oxide, wherein the polymeric material is an organic relaxor ferroelectric material comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the polymeric material comprises polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the weight ratio of the relaxor ferroelectric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
The composite material of claim 1, wherein the polymeric material comprises a poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), and the weight ratio of the polymeric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
A capacitor device comprising: a substrate; a first electrode disposed on the substrate; a dielectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
A method of making a capacitor device, the method comprising: disposing a first electrode on a substrate; disposing a dielectric layer on the first electrode; and disposing a second electrode on the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
An electric component comprising an interconnect that electrically connects at least two elements of the electrical device, wherein the elements of the electrical device comprises or in contact with a dielectric layer comprising the composite material of claim 1.
. canceled
A method of making a composite material comprising contacting a hydrazine-reduced graphene oxide with a relaxor fe rr oelectric material in the presence of a solvent, or contacting graphene oxide with a polymeric material in the presence of a solvent, then reducing graphene oxide with hydrazine. 3 1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂)
Layer stacks claimed or described, ordered top of device to substrate.
capacitor device
electric component with interconnect
Materials described outside the worked examples.
organic relaxor ferroelectric material (fluorinated polymer/copolymer)
hydrazine-reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–1500 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS 1 A, 1B, and I C show a capacitor having a dielectric layer disposed between bottom and top electrodes,
FIG 2 shows an all-organic capacitor device,
FIG 3 shows an embodiment of an electric component with an organic in terconnect,
FIG 4A illustrates dielectric permittivity (left axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/hydraz in e-reduced graphene oxide (HZ-rGO) composite as a function of graphene load in g (wt %), measured at 1 kHz and room temperature,
FIG 4B illustrates the dependence of dielectric permittivity on the frequency for P(VDF-TrFE- CFE)/HZ-rGO with 2 wt % HZ-rGO load in g at room temperature,
FIGS 5A and 5B i llustrate dielectric permittivity (lef t axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/HZ-rGO composite as a function of HZ-rGO loading (wt %), measured at 1 kHz and room temperature using commercial graphene nanoplatelets (
FIG 5 B),
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 8 is a bar chart compar in g the maximum dielectric permittivity and correspond in g dielectric loss reported in the li terature us in g P(VDF-TrFE-CFE) polymer as a matrix in percolative composites, 3 1 2T& a mp;10026-US-NP (SB₄₀₀₀₇US₂)
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
FIG 12 shows the electrostatic potential distribution us in g density functional theory to describe the in fluence of in terfacial charge distribution a) without, and b) with pyrazole group on the edges of graphene
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂) AMENDMENTS TO THE CLAIMS 1. (Cu rr ently Amended) A composite material comprising a polymeric material; and a hydrazine-reduced graphene oxide, wherein the polymeric material is an organic relaxor ferroelectric material comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the polymeric material comprises polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the weight ratio of the relaxor ferroelectric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
The composite material of claim 1, wherein the polymeric material comprises a poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), and the weight ratio of the polymeric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
A capacitor device comprising: a substrate; a first electrode disposed on the substrate; a dielectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
A method of making a capacitor device, the method comprising: disposing a first electrode on a substrate; disposing a dielectric layer on the first electrode; and disposing a second electrode on the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
An electric component comprising an interconnect that electrically connects at least two elements of the electrical device, wherein the elements of the electrical device comprises or in contact with a dielectric layer comprising the composite material of claim 1.
. canceled
A method of making a composite material comprising contacting a hydrazine-reduced graphene oxide with a relaxor fe rr oelectric material in the presence of a solvent, or contacting graphene oxide with a polymeric material in the presence of a solvent, then reducing graphene oxide with hydrazine. 3 1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂)
Layer stacks claimed or described, ordered top of device to substrate.
capacitor device
electric component with interconnect
Materials described outside the worked examples.
organic relaxor ferroelectric material (fluorinated polymer/copolymer)
hydrazine-reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–1500 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,878,341Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS 1 A, 1B, and I C show a capacitor having a dielectric layer disposed between bottom and top electrodes,
FIG 2 shows an all-organic capacitor device,
FIG 3 shows an embodiment of an electric component with an organic in terconnect,
FIG 4A illustrates dielectric permittivity (left axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/hydraz in e-reduced graphene oxide (HZ-rGO) composite as a function of graphene load in g (wt %), measured at 1 kHz and room temperature,
FIG 4B illustrates the dependence of dielectric permittivity on the frequency for P(VDF-TrFE- CFE)/HZ-rGO with 2 wt % HZ-rGO load in g at room temperature,
FIGS 5A and 5B i llustrate dielectric permittivity (lef t axis) and dielectric loss (right axis) of a P(VDF-TrFE-CFE)/HZ-rGO composite as a function of HZ-rGO loading (wt %), measured at 1 kHz and room temperature using commercial graphene nanoplatelets (
FIG 5 B),
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 8 is a bar chart compar in g the maximum dielectric permittivity and correspond in g dielectric loss reported in the li terature us in g P(VDF-TrFE-CFE) polymer as a matrix in percolative composites, 3 1 2T& a mp;10026-US-NP (SB₄₀₀₀₇US₂)
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
FIG 12 shows the electrostatic potential distribution us in g density functional theory to describe the in fluence of in terfacial charge distribution a) without, and b) with pyrazole group on the edges of graphene
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂) AMENDMENTS TO THE CLAIMS 1. (Cu rr ently Amended) A composite material comprising a polymeric material; and a hydrazine-reduced graphene oxide, wherein the polymeric material is an organic relaxor ferroelectric material comprising a fluorinated polymer, a fluorinated copolymer, or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the polymeric material comprises polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), or a combination comprising at least one of the foregoing.
The composite material of claim 1, wherein the weight ratio of the relaxor ferroelectric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
The composite material of claim 1, wherein the polymeric material comprises a poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene), and the weight ratio of the polymeric material to the hydrazine-reduced graphene oxide is 9:1 to 200:1.
A capacitor device comprising: a substrate; a first electrode disposed on the substrate; a dielectric layer disposed on and in contact with the first electrode; and a second electrode disposed on and in contact with the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
A method of making a capacitor device, the method comprising: disposing a first electrode on a substrate; disposing a dielectric layer on the first electrode; and disposing a second electrode on the dielectric layer, wherein the dielectric layer comprises the composite material of claim 1.
An electric component comprising an interconnect that electrically connects at least two elements of the electrical device, wherein the elements of the electrical device comprises or in contact with a dielectric layer comprising the composite material of claim 1.
. canceled
A method of making a composite material comprising contacting a hydrazine-reduced graphene oxide with a relaxor fe rr oelectric material in the presence of a solvent, or contacting graphene oxide with a polymeric material in the presence of a solvent, then reducing graphene oxide with hydrazine. 3 1 2T& 1 0026-US-NP (SB₄₀₀₀₇US₂)
Layer stacks claimed or described, ordered top of device to substrate.
capacitor device
electric component with interconnect
Materials described outside the worked examples.
organic relaxor ferroelectric material (fluorinated polymer/copolymer)
hydrazine-reduced graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–1500 cm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
polyvinylidene fluoride
-(CH₂-CF₂)n-
poly(vinylidene fluoride-co-trifluoroethylene)
poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene)
graphene oxide
intrinsically conductive organic polymer
dopant for conductive organic polymer
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) doped with dimethylsulfoxide
hydrazine-reduced graphene oxide (HZ-rGO)
graphite oxide
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
| ≤ 2 µm |
| — |
Duration | 1800–129600 s | — |
Duration | 5–24 hours | — |
Duration | 10–15 hours | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 3–4 mm | — |
Thickness | 1–20000 nm | — |
Thickness | 5–10000 nm | — |
Thickness | 2–5000 nm | — |
Thickness | 3–1000 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–200 nm | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–150 nm | — |
Thickness | 10–120 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 20–90 nm | — |
Thickness | 30–80 nm | — |
Thickness | 10–90 nm | — |
Thickness | 15–80 nm | — |
Thickness | 20–70 nm | — |
Thickness | 2–10000 nm | — |
Thickness | 30–5000 nm | — |
Thickness | 30–3000 nm | — |
Thickness | 50–1000 nm | — |
Duration | 5–120 seconds | — |
Duration | 15–90 seconds | — |
Duration | 20–70 second | — |
Duration | 5–60 seconds | — |
Duration | 15–45 seconds | — |
Duration | 20–40 seconds | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 µm | — |
polyvinylidene fluoride
-(CH₂-CF₂)n-
poly(vinylidene fluoride-co-trifluoroethylene)
poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene)
graphene oxide
intrinsically conductive organic polymer
dopant for conductive organic polymer
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) doped with dimethylsulfoxide
hydrazine-reduced graphene oxide (HZ-rGO)
graphite oxide
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
| ≤ 2 µm |
| — |
Duration | 1800–129600 s | — |
Duration | 5–24 hours | — |
Duration | 10–15 hours | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 3–4 mm | — |
Thickness | 1–20000 nm | — |
Thickness | 5–10000 nm | — |
Thickness | 2–5000 nm | — |
Thickness | 3–1000 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–200 nm | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–150 nm | — |
Thickness | 10–120 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 20–90 nm | — |
Thickness | 30–80 nm | — |
Thickness | 10–90 nm | — |
Thickness | 15–80 nm | — |
Thickness | 20–70 nm | — |
Thickness | 2–10000 nm | — |
Thickness | 30–5000 nm | — |
Thickness | 30–3000 nm | — |
Thickness | 50–1000 nm | — |
Duration | 5–120 seconds | — |
Duration | 15–90 seconds | — |
Duration | 20–70 second | — |
Duration | 5–60 seconds | — |
Duration | 15–45 seconds | — |
Duration | 20–40 seconds | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 µm | — |
polyvinylidene fluoride
-(CH₂-CF₂)n-
poly(vinylidene fluoride-co-trifluoroethylene)
poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene)
graphene oxide
intrinsically conductive organic polymer
dopant for conductive organic polymer
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) doped with dimethylsulfoxide
hydrazine-reduced graphene oxide (HZ-rGO)
graphite oxide
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
| ≤ 2 µm |
| — |
Duration | 1800–129600 s | — |
Duration | 5–24 hours | — |
Duration | 10–15 hours | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 3–4 mm | — |
Thickness | 1–20000 nm | — |
Thickness | 5–10000 nm | — |
Thickness | 2–5000 nm | — |
Thickness | 3–1000 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–200 nm | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–150 nm | — |
Thickness | 10–120 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 20–90 nm | — |
Thickness | 30–80 nm | — |
Thickness | 10–90 nm | — |
Thickness | 15–80 nm | — |
Thickness | 20–70 nm | — |
Thickness | 2–10000 nm | — |
Thickness | 30–5000 nm | — |
Thickness | 30–3000 nm | — |
Thickness | 50–1000 nm | — |
Duration | 5–120 seconds | — |
Duration | 15–90 seconds | — |
Duration | 20–70 second | — |
Duration | 5–60 seconds | — |
Duration | 15–45 seconds | — |
Duration | 20–40 seconds | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 µm | — |
polyvinylidene fluoride
-(CH₂-CF₂)n-
poly(vinylidene fluoride-co-trifluoroethylene)
poly(vinylidenefluoride-co-trifluoroethylene-co-chlorofluoroethylene)
graphene oxide
intrinsically conductive organic polymer
dopant for conductive organic polymer
poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) doped with dimethylsulfoxide
hydrazine-reduced graphene oxide (HZ-rGO)
graphite oxide
FIG 6A is a graph of in tensity (arbitrary u ni t, a u) versus 2 0 (degrees) illustrat in g XRD pattern for graphite oxide (GO), hydrothermally-reduced graphene oxide (HT-rGO), and HZ-rGO,
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 6B shows a graph of in tensity (arbitrary u ni t, a u) versus Raman shift (reverse centimeters, cm 1) illustrat in g RAMAN spectra of GO, HT-rGO, and HZ-rGO, where in in set is the ID/IG i ntensity ratio for qua li tative comparison on defect density, [0019] FIGs 6C, 6D, and 6E i llustrate SEM …
FIG 9A is a cross-section SEM of P(VDF-TrFE-CFE)/fHT -rGO nanocomposite,
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 9B is a cross-section SEM of P(VDF-TrFE-CFE)/HZ-rGO nanocomposite, [0024] FIGs 10 A and 1O B are graphs of normalized in tensity (arbitrary u ni t, a u) versus wavenumber (reverse centimeters, cm 1) showing, respectively, FTIR spectra of P(VDF-TrFE-CFE)/HT-rGO, and P(VDF-TrFE-CFE)/HZ-rGO under …
FIG 1O C is a graph comparing rGO peak in tensities as a function of loading for both composite systems,
FIG 11 is an XPS spectra showing HZ-rGO at (a) before addition to P(VDF- TrFE-CFE), and after addition to P(VDF-TrFE-CFE) at (b), wherein the insets are the correspond in g structure of the 5-membered r in g on the edge of HZ-rGO sheets, and
| ≤ 2 µm |
| — |
Duration | 1800–129600 s | — |
Duration | 5–24 hours | — |
Duration | 10–15 hours | — |
Thickness | 5–200 nm | — |
Thickness | 10–150 nm | — |
Thickness | 3–4 mm | — |
Thickness | 1–20000 nm | — |
Thickness | 5–10000 nm | — |
Thickness | 2–5000 nm | — |
Thickness | 3–1000 nm | — |
Thickness | 5–1000 nm | — |
Thickness | 5–500 nm | — |
Thickness | 10–500 nm | — |
Thickness | 10–200 nm | — |
Thickness | 5–100 nm | — |
Thickness | 10–100 nm | — |
Thickness | 5–150 nm | — |
Thickness | 10–120 nm | — |
Thickness | 15–1000 nm | — |
Thickness | 20–90 nm | — |
Thickness | 30–80 nm | — |
Thickness | 10–90 nm | — |
Thickness | 15–80 nm | — |
Thickness | 20–70 nm | — |
Thickness | 2–10000 nm | — |
Thickness | 30–5000 nm | — |
Thickness | 30–3000 nm | — |
Thickness | 50–1000 nm | — |
Duration | 5–120 seconds | — |
Duration | 15–90 seconds | — |
Duration | 20–70 second | — |
Duration | 5–60 seconds | — |
Duration | 15–45 seconds | — |
Duration | 20–40 seconds | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 500 µm | — |