Patent
US 9,397,758GRAPHENE-BASED PLASMONIC NANO-TRANSCEIVER EMPLOYING HEMT FOR TERAHERTZ BAND COMMUNICATION
Ian F. Akyildiz
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,397,758Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a communication system. [0013]
FIG. 2A is a top front view of a first embodiment of a plasmonic communication element configured as transmitter. [0014]
FIG. 3A is a top front view of a second embodiment of a plasmonic communication element [0016]
FIG. 4A is a top plan view of ab embodiment of a plasmonic communication element coupled to a plasmonic antenna. [0018]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (b) a graphene layer disposed on the gate layer; and a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a transmitter that is responsive to a transmitted electrical signal applied between the source region and the drain region, wherein the plasmonic antenna is configured to generate an electromagnetic signal corresponding to the transmitted electrical signal.
canceled
The communication element of Claim-1, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 3, wherein the direct band gap semiconductor comprises at least one of GaN and GaAs, and wherein the doped semiconductor comprises I nGaAs.
canceled
canceled
. canceled
The communication element of Claim-1, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
The communication element of Claim 8, wherein the first portion defines a first constriction between the source region and the channel region and wherein the second portion defines a second constriction between the channel region and the drain region.
A communication system, comprising: (a) a signal source configured to generate a transmitted signal; (b) a plasmonic transmitter that is responsive to the transmitted signal and that is configured to generate a first surface plasmonic polariton wave signal corresponding to the transmitted signal; (c) a first plasmonic antenna that is responsive to the first surface plasmonic polariton wave signal and that is configured to generate an electromagnetic signal corresponding to the surface plasmon polariton wave signal; (d) a second plasmonic antenna that is responsive to the electromagnetic signal and that is configured to generate a second surface plasmon polariton wave signal corresponding to the electromagnetic signal; (e) a plasmonic receiver that is responsive to the second surface plasmon polariton wave signal and that is configured to generate a received signal corresponding to the second surface plasmon polariton wave signal; and (f) a signal detector that is configured to detect the received signal.
The communication system of Claim 12, wherein at least one of the plasmonic transmitter and the plasmonic receiver includes a the high electron mobility transistor that comprises: (a) a source region; (b) a drain region; (c) a channel region disposed between the source region and the drain region, the channel region including a first material; Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 5 of 12 (d) a gate layer disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (e) a graphene layer disposed on the gate layer.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; (b) a graphene layer disposed on the gate layer; and Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 7 of 12 (c) a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a receiver that is responsive to an electromagnetic signal and generates a surface plasmonic polariton wave signal corresponding thereto thereby causing an electrical signal corresponding to the electromagnetic signal that is detectable between the source region and the drain region.
The communication element of Claim 22, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 22, further comprising a plasmonic antenna coupled to the graphene layer.
The communication element of Claim 22, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based plasmonic nano-transceiver employing HEMT
THz band plasmonic-based communication system
No layer stack recorded.
Materials described outside the worked examples.
first material (channel region material, undoped direct band gap semiconductor)
second material (gate layer material, doped semiconductor)
Patent
Atlas literature
Patent
US 9,397,758Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a communication system. [0013]
FIG. 2A is a top front view of a first embodiment of a plasmonic communication element configured as transmitter. [0014]
FIG. 3A is a top front view of a second embodiment of a plasmonic communication element [0016]
FIG. 4A is a top plan view of ab embodiment of a plasmonic communication element coupled to a plasmonic antenna. [0018]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (b) a graphene layer disposed on the gate layer; and a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a transmitter that is responsive to a transmitted electrical signal applied between the source region and the drain region, wherein the plasmonic antenna is configured to generate an electromagnetic signal corresponding to the transmitted electrical signal.
canceled
The communication element of Claim-1, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 3, wherein the direct band gap semiconductor comprises at least one of GaN and GaAs, and wherein the doped semiconductor comprises I nGaAs.
canceled
canceled
. canceled
The communication element of Claim-1, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
The communication element of Claim 8, wherein the first portion defines a first constriction between the source region and the channel region and wherein the second portion defines a second constriction between the channel region and the drain region.
A communication system, comprising: (a) a signal source configured to generate a transmitted signal; (b) a plasmonic transmitter that is responsive to the transmitted signal and that is configured to generate a first surface plasmonic polariton wave signal corresponding to the transmitted signal; (c) a first plasmonic antenna that is responsive to the first surface plasmonic polariton wave signal and that is configured to generate an electromagnetic signal corresponding to the surface plasmon polariton wave signal; (d) a second plasmonic antenna that is responsive to the electromagnetic signal and that is configured to generate a second surface plasmon polariton wave signal corresponding to the electromagnetic signal; (e) a plasmonic receiver that is responsive to the second surface plasmon polariton wave signal and that is configured to generate a received signal corresponding to the second surface plasmon polariton wave signal; and (f) a signal detector that is configured to detect the received signal.
The communication system of Claim 12, wherein at least one of the plasmonic transmitter and the plasmonic receiver includes a the high electron mobility transistor that comprises: (a) a source region; (b) a drain region; (c) a channel region disposed between the source region and the drain region, the channel region including a first material; Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 5 of 12 (d) a gate layer disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (e) a graphene layer disposed on the gate layer.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; (b) a graphene layer disposed on the gate layer; and Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 7 of 12 (c) a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a receiver that is responsive to an electromagnetic signal and generates a surface plasmonic polariton wave signal corresponding thereto thereby causing an electrical signal corresponding to the electromagnetic signal that is detectable between the source region and the drain region.
The communication element of Claim 22, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 22, further comprising a plasmonic antenna coupled to the graphene layer.
The communication element of Claim 22, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based plasmonic nano-transceiver employing HEMT
THz band plasmonic-based communication system
No layer stack recorded.
Materials described outside the worked examples.
first material (channel region material, undoped direct band gap semiconductor)
second material (gate layer material, doped semiconductor)
Patent
Atlas literature
Patent
US 9,397,758Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a communication system. [0013]
FIG. 2A is a top front view of a first embodiment of a plasmonic communication element configured as transmitter. [0014]
FIG. 3A is a top front view of a second embodiment of a plasmonic communication element [0016]
FIG. 4A is a top plan view of ab embodiment of a plasmonic communication element coupled to a plasmonic antenna. [0018]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (b) a graphene layer disposed on the gate layer; and a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a transmitter that is responsive to a transmitted electrical signal applied between the source region and the drain region, wherein the plasmonic antenna is configured to generate an electromagnetic signal corresponding to the transmitted electrical signal.
canceled
The communication element of Claim-1, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 3, wherein the direct band gap semiconductor comprises at least one of GaN and GaAs, and wherein the doped semiconductor comprises I nGaAs.
canceled
canceled
. canceled
The communication element of Claim-1, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
The communication element of Claim 8, wherein the first portion defines a first constriction between the source region and the channel region and wherein the second portion defines a second constriction between the channel region and the drain region.
A communication system, comprising: (a) a signal source configured to generate a transmitted signal; (b) a plasmonic transmitter that is responsive to the transmitted signal and that is configured to generate a first surface plasmonic polariton wave signal corresponding to the transmitted signal; (c) a first plasmonic antenna that is responsive to the first surface plasmonic polariton wave signal and that is configured to generate an electromagnetic signal corresponding to the surface plasmon polariton wave signal; (d) a second plasmonic antenna that is responsive to the electromagnetic signal and that is configured to generate a second surface plasmon polariton wave signal corresponding to the electromagnetic signal; (e) a plasmonic receiver that is responsive to the second surface plasmon polariton wave signal and that is configured to generate a received signal corresponding to the second surface plasmon polariton wave signal; and (f) a signal detector that is configured to detect the received signal.
The communication system of Claim 12, wherein at least one of the plasmonic transmitter and the plasmonic receiver includes a the high electron mobility transistor that comprises: (a) a source region; (b) a drain region; (c) a channel region disposed between the source region and the drain region, the channel region including a first material; Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 5 of 12 (d) a gate layer disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (e) a graphene layer disposed on the gate layer.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; (b) a graphene layer disposed on the gate layer; and Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 7 of 12 (c) a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a receiver that is responsive to an electromagnetic signal and generates a surface plasmonic polariton wave signal corresponding thereto thereby causing an electrical signal corresponding to the electromagnetic signal that is detectable between the source region and the drain region.
The communication element of Claim 22, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 22, further comprising a plasmonic antenna coupled to the graphene layer.
The communication element of Claim 22, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based plasmonic nano-transceiver employing HEMT
THz band plasmonic-based communication system
No layer stack recorded.
Materials described outside the worked examples.
first material (channel region material, undoped direct band gap semiconductor)
second material (gate layer material, doped semiconductor)
Patent
Atlas literature
Patent
US 9,397,758Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a block diagram of a communication system. [0013]
FIG. 2A is a top front view of a first embodiment of a plasmonic communication element configured as transmitter. [0014]
FIG. 3A is a top front view of a second embodiment of a plasmonic communication element [0016]
FIG. 4A is a top plan view of ab embodiment of a plasmonic communication element coupled to a plasmonic antenna. [0018]
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (b) a graphene layer disposed on the gate layer; and a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a transmitter that is responsive to a transmitted electrical signal applied between the source region and the drain region, wherein the plasmonic antenna is configured to generate an electromagnetic signal corresponding to the transmitted electrical signal.
canceled
The communication element of Claim-1, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 3, wherein the direct band gap semiconductor comprises at least one of GaN and GaAs, and wherein the doped semiconductor comprises I nGaAs.
canceled
canceled
. canceled
The communication element of Claim-1, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
The communication element of Claim 8, wherein the first portion defines a first constriction between the source region and the channel region and wherein the second portion defines a second constriction between the channel region and the drain region.
A communication system, comprising: (a) a signal source configured to generate a transmitted signal; (b) a plasmonic transmitter that is responsive to the transmitted signal and that is configured to generate a first surface plasmonic polariton wave signal corresponding to the transmitted signal; (c) a first plasmonic antenna that is responsive to the first surface plasmonic polariton wave signal and that is configured to generate an electromagnetic signal corresponding to the surface plasmon polariton wave signal; (d) a second plasmonic antenna that is responsive to the electromagnetic signal and that is configured to generate a second surface plasmon polariton wave signal corresponding to the electromagnetic signal; (e) a plasmonic receiver that is responsive to the second surface plasmon polariton wave signal and that is configured to generate a received signal corresponding to the second surface plasmon polariton wave signal; and (f) a signal detector that is configured to detect the received signal.
The communication system of Claim 12, wherein at least one of the plasmonic transmitter and the plasmonic receiver includes a the high electron mobility transistor that comprises: (a) a source region; (b) a drain region; (c) a channel region disposed between the source region and the drain region, the channel region including a first material; Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 5 of 12 (d) a gate layer disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; and (e) a graphene layer disposed on the gate layer.
A communication element, comprising: (a) a high electron mobility transistor including a gate layer, including: (i) a source region; (ii) a drain region; and (iii) a channel region disposed between the source region and the drain region, the channel region including a first material, the gate layer being disposed on the channel region, the gate layer including a second material that forms a heterojunction with the first material, which induces a two dimensional electron gas in the channel region; (b) a graphene layer disposed on the gate layer; and Application No. 14/560,213 Amendment dated 04/14/2016 Reply to Office Action dated 01/15/2016 Page 7 of 12 (c) a plasmonic antenna coupled to the graphene layer, wherein the communication element is configured as a receiver that is responsive to an electromagnetic signal and generates a surface plasmonic polariton wave signal corresponding thereto thereby causing an electrical signal corresponding to the electromagnetic signal that is detectable between the source region and the drain region.
The communication element of Claim 22, wherein the channel region comprises a direct band gap semiconductor and wherein the gate layer comprises a doped semiconductor.
The communication element of Claim 22, further comprising a plasmonic antenna coupled to the graphene layer.
The communication element of Claim 22, wherein the source region, the drain region and the channel region form a substantially rectangular shape having a first end and an opposite second end, the source region comprising a first portion across the first end, the drain region comprising a second portion across the second end, the channel region comprising a third portion disposed between the first portion and the second portion, the gate layer disposed on the third portion.
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based plasmonic nano-transceiver employing HEMT
THz band plasmonic-based communication system
No layer stack recorded.
Materials described outside the worked examples.
first material (channel region material, undoped direct band gap semiconductor)
second material (gate layer material, doped semiconductor)
GaN
GaAs
InGaAs
graphene (single layer or multiple layers)
GaN
GaAs
InGaAs
graphene (single layer or multiple layers)
GaN
GaAs
InGaAs
graphene (single layer or multiple layers)
GaN
GaAs
InGaAs
graphene (single layer or multiple layers)