Graphene Materials with Controlled Morphology

and SVG 14900697.12-22-2015.IIPPOEZ0PXXIFW4.ABST.1.26.1414.1417.1909.1451.svg 0.113 1.65 Chemistry Black and white TR)

Patent

Atlas literature

Patent

US 10,826,109

Graphene Materials with Controlled Morphology

Alexey Serov

STC.UNM·8 January 2015·US

Drawings

Patent drawings and their descriptions. Click a drawing to enlarge it.

FIG. 1

FIG. 1 SVG 14900697.12-22-2015.IIPPOEZ₀PXXIFW4.ABST.1.39.233.2993.279.3042.svg 0.163 0.153 Chemistry Black and white (57) Abstract: Novel non-planar …

FIG. 2

FIG. 3

FIG. 4

FIG. 5

FIG. 6

FIG. 7

FIG. 8

FIG. 9

FIG. 10

FIG. 11

FIG. 12

FIG. 13

FIG. 14

FIG. 15

FIG. 16

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

11 independent · 8 dependent

1
IndependentCsacrificial template materialthree-dimensional graphene structure
A three-dimensional (3 D) graphene structure comprising a plurality of graphene walls surrounding a plurality of voids, wherein the voids are created by the rem oval of a sacriﬁcial template material and wherein the voids result in a bi-modal po re distribution. Currently amended
1. 3
  Dependent← claim 1Cthree-dimensional graphene structure
  The 3D graphene structure of claim 1 wherein the graphene walls consist of between 1 and layers of graphene sheets. Original
2. 4
  Dependent← claim 1Cthree-dimensional graphene structure
  The 3D graph e ne structure of claim 1 wherein the graphene wa lls consist of between 1 and 10 layers of graphene sheets. Original
3. 5
  Dependent← claim 1CSithree-dimensional graphene structure
  The 3D graphene structure of claim 1 wherein a silicon particle is housed within at least one of the voids, wherein the diameter of the silicon particle. when fully expanded, is l e ss than the diam e ter of the void. Previously presented
4. 6
  Dependent← claim 1Cthree-dimensional graphene structure
  The 3D graphene structure of claim 1 further comprising a plurality of surface defects. Original
5. 8
  Dependent← claim 1Cthree-dimensional graphene structure
  The 3D graphene structure of claim 1 wherein the graphene walls have a thickness of less than 20 graphene monolayers. Original
6. 25
  Dependent← claim 1Cthree-dimensional graphene structure
  The 3D graphene structure of claim 1 wherein the voids are irregular and non-uniform in shape. Previously presented
2
IndependentCthree-dimensional graphene structure
The 3D graphene structure of claim I wherein the graphene walls consist of a single graphene sheet. Original
9
IndependentCthree-dimensional graphene structure
(Currently a m ended) The [[-34]] 3D graphene structure of claim I wherein the graphene walls have a thickness of between 6 and 10 g r aphene monolayers. Currently amended
10
Independent
10-20. Canceled
20
Independent
Canceled
21
IndependentCsacrificial template materialthree-dimensional graphene structure
(Currently am ende d) A three-dimensional (3 D) graphene structure consisting of a plurality of g r aphene walls surrounding a plurality of voids, wherein the voids are created by the removal of a sacriﬁcial template material and wherein the voids result in a bi-modal pore distribution. Currently amended
1. 27
  Dependent← claim 21Cthree-dimensional graphene structure
  The 3D graphene structure of claim 21 wherein the voids are irregular and non-u nifonn in shape. Previously presented
22
IndependentCthree-dimensional graphene structure
The 3D graphene structure of claim [[--]] 21 wherein the graphene wal l s consist of a single graphene shee t Currently amended
23
IndependentCthree-dimensional graphene structure
The 3D graphene structure of claim [[- 7]] 2 1 wherein the graph enc wa l ls consist of between 1 and 5 layers of graphene sheets. Currently amended
24
IndependentCthree-dimensional graphene structure
The 3D graphene structure of claim [[-]] 21 wherein the graphene walls consist of between 1 and 20 layers of graphene sheets. Currently amended
26
Independent
Canceled
28
Independent
28. PAGE 6 19' RCVD AT 6/11 2020 5:01:34 PM [Eastern Daylight Time]* SVR:W-PTOFAX-002 112 * DNIS:2738300 * CSID:15052130484 ANI:4803836933 * DURAT I ON (mm-ss):05 -25 Canceled

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

three-dimensional graphene structure

Cporous graphene wall network

Materials

Materials described outside the worked examples.

3D graphene

Primary Structure Material

sacrificial template material

Sacrificial Template

Process steps

Additional fabrication and treatment steps described in the patent.

Template Removal

Step 1

Process details

steps:reduction of GO, HF leaching of SiO₂ template

description:Exfoliated GO mixed with SiO2, reduced, then SiO₂ template removed by HF leaching to form 3D graphene structure with bi-modal pore distribution

Materials:C

Graphene Materials with Controlled Morphology | Matter42 Literature