Patent
US 9,250,204Graphene Sensor
Dechao Guo
US
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Patent
Atlas literature
Patent
US 9,250,204Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6 B illustrate an exemplary method for forming a graphene sensor. Page 2 of 8 YO R₉₂₀₁₀₀₀₃₁U S₄
FIG. 2A illustrates a side view of the resultant structure following the deposition of a sacrificial layer 202 in the channel 102 (of
FIG. 3 illustrates a side view of the resultant structure following the deposition of a first dielectric layer 302 on the substrate 100 and the sacrificial layer …
FIG. 4 illustrates the resultant structure following the removal of portions of the second dielectric layer 306 and portions of the graphene layer 304 that …
FIG. 5 illustrates the resultant structure following the deposition of a capping layer 502 on the exposed portions of the substrate 100, the sacrificial layer …
FIG. 6A) and the capping layer 502 where the flow path 601 exits from the second cavity 604 defined by a second distal end of the Page 4 of 8 YO R₉₂₀₁₀₀₀₃₁US₄ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor, comprising: SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.3.412.706.972.1702.svg 3.32 1.867 Chemistry Black and white fined in a substrate, the fluid channel having a first end and a mmunication with the first end of the fluid channel, and a ication with the second end of the fluid channel opposite the fluid flow path comprising the first cavity, the fluid channel and te dielectric layer, comprising a first dielectric layer, disposed r the fluid channel; isposed on the fis-t-transistor gate dielectric layer; a second dielectric layer disposed on the graphene layer; a source region disposed on the fi-st-transistor gate dielectric layer, the source SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.13.412.1841.526.2295.svg 1.513 0.38 Chemistry Black and white on also in contact with a first end of the graphene layer; a drain region disposed on the fir gate dielectric layer, the drain region also in tact with a second end of the graphene layer; a capping layer disposed on a portion of the substrate; and a fluid flow path defined by a channel in the substrate, a first cavity in the capping SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.18.412.2434.473.2926.svg 1.64 0.203 Chemistry Black and white ayer communicative with the channel, the first dielectric layer, and a second cavity in the apping layer communicative with the channel, wherein the channel comprises a physical pening formed in the substrate so as to define a gap between a bottom surface of the first ate dielectric layer and a top surface of the substrate.
The sensor of claim 1, wherein the sensor includes a gate region. 3
The sensor of claim 1, wherein the graphene layer includes a graphene tube.
The sensor of claim 1, wherein the second dielectric layer has a greater thickness than the first dielectric layer.
The sensor of claim 1, wherein a longitudinal axis of the channel is orthogonal to an axis that connects the source and drain regions. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene biosensor (field-effect transistor)
Materials described outside the worked examples.
graphene layer
first dielectric layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,250,204Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6 B illustrate an exemplary method for forming a graphene sensor. Page 2 of 8 YO R₉₂₀₁₀₀₀₃₁U S₄
FIG. 2A illustrates a side view of the resultant structure following the deposition of a sacrificial layer 202 in the channel 102 (of
FIG. 3 illustrates a side view of the resultant structure following the deposition of a first dielectric layer 302 on the substrate 100 and the sacrificial layer …
FIG. 4 illustrates the resultant structure following the removal of portions of the second dielectric layer 306 and portions of the graphene layer 304 that …
FIG. 5 illustrates the resultant structure following the deposition of a capping layer 502 on the exposed portions of the substrate 100, the sacrificial layer …
FIG. 6A) and the capping layer 502 where the flow path 601 exits from the second cavity 604 defined by a second distal end of the Page 4 of 8 YO R₉₂₀₁₀₀₀₃₁US₄ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor, comprising: SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.3.412.706.972.1702.svg 3.32 1.867 Chemistry Black and white fined in a substrate, the fluid channel having a first end and a mmunication with the first end of the fluid channel, and a ication with the second end of the fluid channel opposite the fluid flow path comprising the first cavity, the fluid channel and te dielectric layer, comprising a first dielectric layer, disposed r the fluid channel; isposed on the fis-t-transistor gate dielectric layer; a second dielectric layer disposed on the graphene layer; a source region disposed on the fi-st-transistor gate dielectric layer, the source SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.13.412.1841.526.2295.svg 1.513 0.38 Chemistry Black and white on also in contact with a first end of the graphene layer; a drain region disposed on the fir gate dielectric layer, the drain region also in tact with a second end of the graphene layer; a capping layer disposed on a portion of the substrate; and a fluid flow path defined by a channel in the substrate, a first cavity in the capping SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.18.412.2434.473.2926.svg 1.64 0.203 Chemistry Black and white ayer communicative with the channel, the first dielectric layer, and a second cavity in the apping layer communicative with the channel, wherein the channel comprises a physical pening formed in the substrate so as to define a gap between a bottom surface of the first ate dielectric layer and a top surface of the substrate.
The sensor of claim 1, wherein the sensor includes a gate region. 3
The sensor of claim 1, wherein the graphene layer includes a graphene tube.
The sensor of claim 1, wherein the second dielectric layer has a greater thickness than the first dielectric layer.
The sensor of claim 1, wherein a longitudinal axis of the channel is orthogonal to an axis that connects the source and drain regions. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene biosensor (field-effect transistor)
Materials described outside the worked examples.
graphene layer
first dielectric layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,250,204Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6 B illustrate an exemplary method for forming a graphene sensor. Page 2 of 8 YO R₉₂₀₁₀₀₀₃₁U S₄
FIG. 2A illustrates a side view of the resultant structure following the deposition of a sacrificial layer 202 in the channel 102 (of
FIG. 3 illustrates a side view of the resultant structure following the deposition of a first dielectric layer 302 on the substrate 100 and the sacrificial layer …
FIG. 4 illustrates the resultant structure following the removal of portions of the second dielectric layer 306 and portions of the graphene layer 304 that …
FIG. 5 illustrates the resultant structure following the deposition of a capping layer 502 on the exposed portions of the substrate 100, the sacrificial layer …
FIG. 6A) and the capping layer 502 where the flow path 601 exits from the second cavity 604 defined by a second distal end of the Page 4 of 8 YO R₉₂₀₁₀₀₀₃₁US₄ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor, comprising: SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.3.412.706.972.1702.svg 3.32 1.867 Chemistry Black and white fined in a substrate, the fluid channel having a first end and a mmunication with the first end of the fluid channel, and a ication with the second end of the fluid channel opposite the fluid flow path comprising the first cavity, the fluid channel and te dielectric layer, comprising a first dielectric layer, disposed r the fluid channel; isposed on the fis-t-transistor gate dielectric layer; a second dielectric layer disposed on the graphene layer; a source region disposed on the fi-st-transistor gate dielectric layer, the source SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.13.412.1841.526.2295.svg 1.513 0.38 Chemistry Black and white on also in contact with a first end of the graphene layer; a drain region disposed on the fir gate dielectric layer, the drain region also in tact with a second end of the graphene layer; a capping layer disposed on a portion of the substrate; and a fluid flow path defined by a channel in the substrate, a first cavity in the capping SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.18.412.2434.473.2926.svg 1.64 0.203 Chemistry Black and white ayer communicative with the channel, the first dielectric layer, and a second cavity in the apping layer communicative with the channel, wherein the channel comprises a physical pening formed in the substrate so as to define a gap between a bottom surface of the first ate dielectric layer and a top surface of the substrate.
The sensor of claim 1, wherein the sensor includes a gate region. 3
The sensor of claim 1, wherein the graphene layer includes a graphene tube.
The sensor of claim 1, wherein the second dielectric layer has a greater thickness than the first dielectric layer.
The sensor of claim 1, wherein a longitudinal axis of the channel is orthogonal to an axis that connects the source and drain regions. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene biosensor (field-effect transistor)
Materials described outside the worked examples.
graphene layer
first dielectric layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,250,204Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1-6 B illustrate an exemplary method for forming a graphene sensor. Page 2 of 8 YO R₉₂₀₁₀₀₀₃₁U S₄
FIG. 2A illustrates a side view of the resultant structure following the deposition of a sacrificial layer 202 in the channel 102 (of
FIG. 3 illustrates a side view of the resultant structure following the deposition of a first dielectric layer 302 on the substrate 100 and the sacrificial layer …
FIG. 4 illustrates the resultant structure following the removal of portions of the second dielectric layer 306 and portions of the graphene layer 304 that …
FIG. 5 illustrates the resultant structure following the deposition of a capping layer 502 on the exposed portions of the substrate 100, the sacrificial layer …
FIG. 6A) and the capping layer 502 where the flow path 601 exits from the second cavity 604 defined by a second distal end of the Page 4 of 8 YO R₉₂₀₁₀₀₀₃₁US₄ …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A sensor, comprising: SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.3.412.706.972.1702.svg 3.32 1.867 Chemistry Black and white fined in a substrate, the fluid channel having a first end and a mmunication with the first end of the fluid channel, and a ication with the second end of the fluid channel opposite the fluid flow path comprising the first cavity, the fluid channel and te dielectric layer, comprising a first dielectric layer, disposed r the fluid channel; isposed on the fis-t-transistor gate dielectric layer; a second dielectric layer disposed on the graphene layer; a source region disposed on the fi-st-transistor gate dielectric layer, the source SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.13.412.1841.526.2295.svg 1.513 0.38 Chemistry Black and white on also in contact with a first end of the graphene layer; a drain region disposed on the fir gate dielectric layer, the drain region also in tact with a second end of the graphene layer; a capping layer disposed on a portion of the substrate; and a fluid flow path defined by a channel in the substrate, a first cavity in the capping SVG 14604959.07-07-2015.IBW₂OVDXPXXIFW1.CLM.1.18.412.2434.473.2926.svg 1.64 0.203 Chemistry Black and white ayer communicative with the channel, the first dielectric layer, and a second cavity in the apping layer communicative with the channel, wherein the channel comprises a physical pening formed in the substrate so as to define a gap between a bottom surface of the first ate dielectric layer and a top surface of the substrate.
The sensor of claim 1, wherein the sensor includes a gate region. 3
The sensor of claim 1, wherein the graphene layer includes a graphene tube.
The sensor of claim 1, wherein the second dielectric layer has a greater thickness than the first dielectric layer.
The sensor of claim 1, wherein a longitudinal axis of the channel is orthogonal to an axis that connects the source and drain regions. 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene biosensor (field-effect transistor)
Materials described outside the worked examples.
graphene layer
first dielectric layer
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
second dielectric layer
graphene tube
SiO₂
HfO₂
Si₃N₄
ZrO₂
Ta₂O₅
TiO₂
graphene layer (graphene tube)
sacrificial layer (SiGe or Ge)
source/drain metal (Ti, Au, W, Ag, or Ta)
second dielectric layer
graphene tube
SiO₂
HfO₂
Si₃N₄
ZrO₂
Ta₂O₅
TiO₂
graphene layer (graphene tube)
sacrificial layer (SiGe or Ge)
source/drain metal (Ti, Au, W, Ag, or Ta)
second dielectric layer
graphene tube
SiO₂
HfO₂
Si₃N₄
ZrO₂
Ta₂O₅
TiO₂
graphene layer (graphene tube)
sacrificial layer (SiGe or Ge)
source/drain metal (Ti, Au, W, Ag, or Ta)
second dielectric layer
graphene tube
SiO₂
HfO₂
Si₃N₄
ZrO₂
Ta₂O₅
TiO₂
graphene layer (graphene tube)
sacrificial layer (SiGe or Ge)
source/drain metal (Ti, Au, W, Ag, or Ta)