Patent
US 10,305,251LASER DIODES WITH LAYER OF GRAPHENE
Di Liang
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,305,251Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser diode comprising: a semiconductor laser structure including an active laser region; a semiconductor substrate; [[and]] a layer of graphene between the semiconductor laser structure and the semiconductor substrate; a first pair of electrodes to apply a first potential difference across the active laser region; and a second pair of electrodes to apply a second potential difference across the layer of graphene, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap a top surface of the layer of graphene, and at least one of the second pair of electrodes is separate from the first pair of electrodes whereby the second potential difference applied to the graphene layer can be varied without varying the first potential difference across the active laser region. Currently amended
The laser diode of claim 1 wherein the graphene layer extends continuously from a first side of the active laser region to a second side of the active laser region. Original
The laser diode of claim 1 wherein the first pair of electrodes and second pair of electrodes share an electrode in common. Withdrawn
The laser diode of claim 1 further comprising an insulating layer that together with the layer of graphene forms a capacitor between the second pair of electrodes. Original
The laser diode of claim 1 wherein the layer of graphene has a first face facing the semiconductor laser structure and a second face facing the semiconductor substrate and wherein the second pair of electrodes is to apply a potential difference between the first face and the second face of the layer of graphene. Original
The laser diode of claim 1 wherein the layer of graphene has a width equal to or greater than a width of the active laser region and a length extending along at least part of the length of the active laser region. Original
The laser diode of claim 1 wherein the active laser region is adjacent a waveguide of the semiconductor substrate and separated from the waveguide by the layer of graphene. Original
The laser diode of claim 1 wherein the first pair of electrodes is on a first side of the active laser region and a third pair of electrodes to apply a potential difference across the layer of graphene is located on a second side of the active laser region. Original
A laser diode comprising: a semiconductor substrate; an active laser region positioned over the semiconductor substrate, wherein the active laser region includes a first doped semiconductor layer, a second doped semiconductor layer having a doping which is opposite in polarity to a doping of the first doped semiconductor layer, and a quantum layer between the first and second doped semiconductor layers; a graphene layer and at least one insulating layer extending between the active laser region and the semiconductor substrate; a first pair of electrodes including a first electrode and a second electrode, the first electrode connecting with the first doped semiconductor layer of the active laser region, and the second electrode connecting with the second doped semiconductor layer of the active laser region; and a second pair of electrodes including a third electrode and a fourth electrode, the third electrode having an electrically conductive connection to the graphene layer, and the fourth electrode having an electrically conductive connection to the semiconductor substrat, whereby a capacitive path including the graphene layer and the at least one insulating layer is formed between the third electrode and the fourth electrode, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap the graphene layer, and a potential difference between the third electrode and the fourth electrode can be varied without changing a frequency of light emitted by the active laser region. Currently amended
The laser diode of claim 9 wherein an optical mode of a laser cavity of the laser diode overlaps with the layer of graphene. Original
The laser diode of claim 9 comprising a first voltage source to apply a variable potential difference between the third electrode and the fourth electrode so as to modulate output laser light by varying a voltage bias between a face of the graphene layer that faces the semiconductor substrate and a face of the graphene layer that faces the active laser region. Previously presented
The laser diode of claim 9 comprising a second voltage source to apply a potential difference between the first electrode and the second electrode so as to pump the active laser region. Previously presented
The laser diode of claim 9 wherein the third electrode and. the fourth electrode are both on a first side of the active laser region. Previously presented
The laser diode of claim 9 wherein either the third electrode, or the fourth electrode directly contacts the layer of graphene. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
laser diode with graphene modulation layer
laser diode with graphene layer, insulating layer, and doped semiconductor active region
Materials described outside the worked examples.
graphene
semiconductor substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,305,251Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser diode comprising: a semiconductor laser structure including an active laser region; a semiconductor substrate; [[and]] a layer of graphene between the semiconductor laser structure and the semiconductor substrate; a first pair of electrodes to apply a first potential difference across the active laser region; and a second pair of electrodes to apply a second potential difference across the layer of graphene, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap a top surface of the layer of graphene, and at least one of the second pair of electrodes is separate from the first pair of electrodes whereby the second potential difference applied to the graphene layer can be varied without varying the first potential difference across the active laser region. Currently amended
The laser diode of claim 1 wherein the graphene layer extends continuously from a first side of the active laser region to a second side of the active laser region. Original
The laser diode of claim 1 wherein the first pair of electrodes and second pair of electrodes share an electrode in common. Withdrawn
The laser diode of claim 1 further comprising an insulating layer that together with the layer of graphene forms a capacitor between the second pair of electrodes. Original
The laser diode of claim 1 wherein the layer of graphene has a first face facing the semiconductor laser structure and a second face facing the semiconductor substrate and wherein the second pair of electrodes is to apply a potential difference between the first face and the second face of the layer of graphene. Original
The laser diode of claim 1 wherein the layer of graphene has a width equal to or greater than a width of the active laser region and a length extending along at least part of the length of the active laser region. Original
The laser diode of claim 1 wherein the active laser region is adjacent a waveguide of the semiconductor substrate and separated from the waveguide by the layer of graphene. Original
The laser diode of claim 1 wherein the first pair of electrodes is on a first side of the active laser region and a third pair of electrodes to apply a potential difference across the layer of graphene is located on a second side of the active laser region. Original
A laser diode comprising: a semiconductor substrate; an active laser region positioned over the semiconductor substrate, wherein the active laser region includes a first doped semiconductor layer, a second doped semiconductor layer having a doping which is opposite in polarity to a doping of the first doped semiconductor layer, and a quantum layer between the first and second doped semiconductor layers; a graphene layer and at least one insulating layer extending between the active laser region and the semiconductor substrate; a first pair of electrodes including a first electrode and a second electrode, the first electrode connecting with the first doped semiconductor layer of the active laser region, and the second electrode connecting with the second doped semiconductor layer of the active laser region; and a second pair of electrodes including a third electrode and a fourth electrode, the third electrode having an electrically conductive connection to the graphene layer, and the fourth electrode having an electrically conductive connection to the semiconductor substrat, whereby a capacitive path including the graphene layer and the at least one insulating layer is formed between the third electrode and the fourth electrode, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap the graphene layer, and a potential difference between the third electrode and the fourth electrode can be varied without changing a frequency of light emitted by the active laser region. Currently amended
The laser diode of claim 9 wherein an optical mode of a laser cavity of the laser diode overlaps with the layer of graphene. Original
The laser diode of claim 9 comprising a first voltage source to apply a variable potential difference between the third electrode and the fourth electrode so as to modulate output laser light by varying a voltage bias between a face of the graphene layer that faces the semiconductor substrate and a face of the graphene layer that faces the active laser region. Previously presented
The laser diode of claim 9 comprising a second voltage source to apply a potential difference between the first electrode and the second electrode so as to pump the active laser region. Previously presented
The laser diode of claim 9 wherein the third electrode and. the fourth electrode are both on a first side of the active laser region. Previously presented
The laser diode of claim 9 wherein either the third electrode, or the fourth electrode directly contacts the layer of graphene. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
laser diode with graphene modulation layer
laser diode with graphene layer, insulating layer, and doped semiconductor active region
Materials described outside the worked examples.
graphene
semiconductor substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,305,251Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser diode comprising: a semiconductor laser structure including an active laser region; a semiconductor substrate; [[and]] a layer of graphene between the semiconductor laser structure and the semiconductor substrate; a first pair of electrodes to apply a first potential difference across the active laser region; and a second pair of electrodes to apply a second potential difference across the layer of graphene, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap a top surface of the layer of graphene, and at least one of the second pair of electrodes is separate from the first pair of electrodes whereby the second potential difference applied to the graphene layer can be varied without varying the first potential difference across the active laser region. Currently amended
The laser diode of claim 1 wherein the graphene layer extends continuously from a first side of the active laser region to a second side of the active laser region. Original
The laser diode of claim 1 wherein the first pair of electrodes and second pair of electrodes share an electrode in common. Withdrawn
The laser diode of claim 1 further comprising an insulating layer that together with the layer of graphene forms a capacitor between the second pair of electrodes. Original
The laser diode of claim 1 wherein the layer of graphene has a first face facing the semiconductor laser structure and a second face facing the semiconductor substrate and wherein the second pair of electrodes is to apply a potential difference between the first face and the second face of the layer of graphene. Original
The laser diode of claim 1 wherein the layer of graphene has a width equal to or greater than a width of the active laser region and a length extending along at least part of the length of the active laser region. Original
The laser diode of claim 1 wherein the active laser region is adjacent a waveguide of the semiconductor substrate and separated from the waveguide by the layer of graphene. Original
The laser diode of claim 1 wherein the first pair of electrodes is on a first side of the active laser region and a third pair of electrodes to apply a potential difference across the layer of graphene is located on a second side of the active laser region. Original
A laser diode comprising: a semiconductor substrate; an active laser region positioned over the semiconductor substrate, wherein the active laser region includes a first doped semiconductor layer, a second doped semiconductor layer having a doping which is opposite in polarity to a doping of the first doped semiconductor layer, and a quantum layer between the first and second doped semiconductor layers; a graphene layer and at least one insulating layer extending between the active laser region and the semiconductor substrate; a first pair of electrodes including a first electrode and a second electrode, the first electrode connecting with the first doped semiconductor layer of the active laser region, and the second electrode connecting with the second doped semiconductor layer of the active laser region; and a second pair of electrodes including a third electrode and a fourth electrode, the third electrode having an electrically conductive connection to the graphene layer, and the fourth electrode having an electrically conductive connection to the semiconductor substrat, whereby a capacitive path including the graphene layer and the at least one insulating layer is formed between the third electrode and the fourth electrode, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap the graphene layer, and a potential difference between the third electrode and the fourth electrode can be varied without changing a frequency of light emitted by the active laser region. Currently amended
The laser diode of claim 9 wherein an optical mode of a laser cavity of the laser diode overlaps with the layer of graphene. Original
The laser diode of claim 9 comprising a first voltage source to apply a variable potential difference between the third electrode and the fourth electrode so as to modulate output laser light by varying a voltage bias between a face of the graphene layer that faces the semiconductor substrate and a face of the graphene layer that faces the active laser region. Previously presented
The laser diode of claim 9 comprising a second voltage source to apply a potential difference between the first electrode and the second electrode so as to pump the active laser region. Previously presented
The laser diode of claim 9 wherein the third electrode and. the fourth electrode are both on a first side of the active laser region. Previously presented
The laser diode of claim 9 wherein either the third electrode, or the fourth electrode directly contacts the layer of graphene. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
laser diode with graphene modulation layer
laser diode with graphene layer, insulating layer, and doped semiconductor active region
Materials described outside the worked examples.
graphene
semiconductor substrate
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,305,251Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A laser diode comprising: a semiconductor laser structure including an active laser region; a semiconductor substrate; [[and]] a layer of graphene between the semiconductor laser structure and the semiconductor substrate; a first pair of electrodes to apply a first potential difference across the active laser region; and a second pair of electrodes to apply a second potential difference across the layer of graphene, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap a top surface of the layer of graphene, and at least one of the second pair of electrodes is separate from the first pair of electrodes whereby the second potential difference applied to the graphene layer can be varied without varying the first potential difference across the active laser region. Currently amended
The laser diode of claim 1 wherein the graphene layer extends continuously from a first side of the active laser region to a second side of the active laser region. Original
The laser diode of claim 1 wherein the first pair of electrodes and second pair of electrodes share an electrode in common. Withdrawn
The laser diode of claim 1 further comprising an insulating layer that together with the layer of graphene forms a capacitor between the second pair of electrodes. Original
The laser diode of claim 1 wherein the layer of graphene has a first face facing the semiconductor laser structure and a second face facing the semiconductor substrate and wherein the second pair of electrodes is to apply a potential difference between the first face and the second face of the layer of graphene. Original
The laser diode of claim 1 wherein the layer of graphene has a width equal to or greater than a width of the active laser region and a length extending along at least part of the length of the active laser region. Original
The laser diode of claim 1 wherein the active laser region is adjacent a waveguide of the semiconductor substrate and separated from the waveguide by the layer of graphene. Original
The laser diode of claim 1 wherein the first pair of electrodes is on a first side of the active laser region and a third pair of electrodes to apply a potential difference across the layer of graphene is located on a second side of the active laser region. Original
A laser diode comprising: a semiconductor substrate; an active laser region positioned over the semiconductor substrate, wherein the active laser region includes a first doped semiconductor layer, a second doped semiconductor layer having a doping which is opposite in polarity to a doping of the first doped semiconductor layer, and a quantum layer between the first and second doped semiconductor layers; a graphene layer and at least one insulating layer extending between the active laser region and the semiconductor substrate; a first pair of electrodes including a first electrode and a second electrode, the first electrode connecting with the first doped semiconductor layer of the active laser region, and the second electrode connecting with the second doped semiconductor layer of the active laser region; and a second pair of electrodes including a third electrode and a fourth electrode, the third electrode having an electrically conductive connection to the graphene layer, and the fourth electrode having an electrically conductive connection to the semiconductor substrat, whereby a capacitive path including the graphene layer and the at least one insulating layer is formed between the third electrode and the fourth electrode, wherein: the first pair of electrodes and at least one electrode of the second pair of electrodes are disposed above the layer of graphene and the first pair of electrodes and at least one electrode of the second pair of electrodes at least partially overlap the graphene layer, and a potential difference between the third electrode and the fourth electrode can be varied without changing a frequency of light emitted by the active laser region. Currently amended
The laser diode of claim 9 wherein an optical mode of a laser cavity of the laser diode overlaps with the layer of graphene. Original
The laser diode of claim 9 comprising a first voltage source to apply a variable potential difference between the third electrode and the fourth electrode so as to modulate output laser light by varying a voltage bias between a face of the graphene layer that faces the semiconductor substrate and a face of the graphene layer that faces the active laser region. Previously presented
The laser diode of claim 9 comprising a second voltage source to apply a potential difference between the first electrode and the second electrode so as to pump the active laser region. Previously presented
The laser diode of claim 9 wherein the third electrode and. the fourth electrode are both on a first side of the active laser region. Previously presented
The laser diode of claim 9 wherein either the third electrode, or the fourth electrode directly contacts the layer of graphene. Previously presented
Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
laser diode with graphene modulation layer
laser diode with graphene layer, insulating layer, and doped semiconductor active region
Materials described outside the worked examples.
graphene
semiconductor substrate
Related documents with shared materials, methods, properties, or citations.
semiconductor laser diode heterostructure on SOI (described embodiment)
insulating layer
P-InP
N-InP
P-AlGaAs
N-(Al)GaAs
P-SiGe
N-SiGe
buried oxide layer
semiconductor laser diode heterostructure on SOI (described embodiment)
insulating layer
P-InP
N-InP
P-AlGaAs
N-(Al)GaAs
P-SiGe
N-SiGe
buried oxide layer
semiconductor laser diode heterostructure on SOI (described embodiment)
insulating layer
P-InP
N-InP
P-AlGaAs
N-(Al)GaAs
P-SiGe
N-SiGe
buried oxide layer
semiconductor laser diode heterostructure on SOI (described embodiment)
insulating layer
P-InP
N-InP
P-AlGaAs
N-(Al)GaAs
P-SiGe
N-SiGe
buried oxide layer