Patent
US 12,276,044 B2LOW ETCH PIT DENSITY GALLIUM ARSENIDE CRYSTALS WITH BORON DOPANT
Rajaram Shetty, Weiguo Liu, Morris Young
AXT, Inc., Fremont, CA (US)·Apr. 15, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,276,044 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a vertical gradient freeze 50 reactor, in accordance with an example embodiment of the disclosure.
FIG. 2 illustrates etch pit density results for 6" gallium arsenide wafers manufactured in accordance with an embodiment of the disclosure. 55
FIG. 3 illustrates a flow chart for fabricating gallium arsenide wafers using a vertical gradient freeze process, in accordance with an example embodiment of …
FIG. 4 illustrates devices fabricated on low etch pit density 6 inch semi-insulating gallium arsenide wafers, in 60 accordance with an example embodiment of …
FIG. 60 4 is merely an example. In addition, the die 403 may comprise optoelectronic devices such as edge-emitting lasers, vertical cavity surface- emitting …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal wafer having a boron as a dopant, an average etch pit density of less than 500 cm⁻², and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 200 cm⁻².
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 100 cm⁻².
The wafer according to claim 1, wherein the wafer has a diameter of 6 inches or greater.
The wafer according to claim 1, wherein the wafer has a boron concentration between 1×1019 cm⁻³ and 2×1019 cm⁻³.
The wafer according to claim 1, wherein the wafer has a thickness of 300 µm or greater.
The wafer according to claim 1, wherein electronic and/or optoelectronic devices are formed on a first surface of the wafer.
A semiconductor substrate, the substrate comprising: a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density ranging from 50 cm⁻² to 5000 cm⁻² across the wafer, with an average etch pit density of less than 500 cm⁻², a boron concentration between 1×1019 cm⁻³ and up to 3×1019 cm⁻³, and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a diameter of 6 inches or greater.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a thickness of 300 µm or greater. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
EPD measurements performed per SEMI M₃₆-0699 and ASTM F₁₄₀-92 on 6-inch boron-doped GaAs wafers from two ingots. Average EPD of 50 and 75 cm⁻² (maximum 875 and 1583 cm⁻²) at the seed end, and average EPD of 156 and 164 cm⁻² (maximum 3125 and 4958 cm⁻²) at the tail end.
2 materials
Absorption coefficients measured at 940 nm for boron-doped GaAs wafers (~600 µm nominal thickness): values of 5.340, 5.337, 3.823, and 4.585 cm⁻¹ for B-doped wafers (thicknesses 692–694 µm), all below 6 cm⁻¹. Silicon-doped GaAs wafers measured 7.057–11.113 cm⁻¹ at 940 nm. At 1000 nm and 1050 nm, boron-doped wafers show absorption coefficients <2 cm⁻¹.
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal wafer substrate
Materials described outside the worked examples.
boron dopant
B
boron-doped polycrystalline GaAs
GaAs:B (polycrystalline)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 940 nm — B-doped GaAs wafer 1 | 5.34 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 2 | 5.337 cm⁻¹ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,276,044 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a vertical gradient freeze 50 reactor, in accordance with an example embodiment of the disclosure.
FIG. 2 illustrates etch pit density results for 6" gallium arsenide wafers manufactured in accordance with an embodiment of the disclosure. 55
FIG. 3 illustrates a flow chart for fabricating gallium arsenide wafers using a vertical gradient freeze process, in accordance with an example embodiment of …
FIG. 4 illustrates devices fabricated on low etch pit density 6 inch semi-insulating gallium arsenide wafers, in 60 accordance with an example embodiment of …
FIG. 60 4 is merely an example. In addition, the die 403 may comprise optoelectronic devices such as edge-emitting lasers, vertical cavity surface- emitting …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal wafer having a boron as a dopant, an average etch pit density of less than 500 cm⁻², and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 200 cm⁻².
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 100 cm⁻².
The wafer according to claim 1, wherein the wafer has a diameter of 6 inches or greater.
The wafer according to claim 1, wherein the wafer has a boron concentration between 1×1019 cm⁻³ and 2×1019 cm⁻³.
The wafer according to claim 1, wherein the wafer has a thickness of 300 µm or greater.
The wafer according to claim 1, wherein electronic and/or optoelectronic devices are formed on a first surface of the wafer.
A semiconductor substrate, the substrate comprising: a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density ranging from 50 cm⁻² to 5000 cm⁻² across the wafer, with an average etch pit density of less than 500 cm⁻², a boron concentration between 1×1019 cm⁻³ and up to 3×1019 cm⁻³, and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a diameter of 6 inches or greater.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a thickness of 300 µm or greater. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
EPD measurements performed per SEMI M₃₆-0699 and ASTM F₁₄₀-92 on 6-inch boron-doped GaAs wafers from two ingots. Average EPD of 50 and 75 cm⁻² (maximum 875 and 1583 cm⁻²) at the seed end, and average EPD of 156 and 164 cm⁻² (maximum 3125 and 4958 cm⁻²) at the tail end.
2 materials
Absorption coefficients measured at 940 nm for boron-doped GaAs wafers (~600 µm nominal thickness): values of 5.340, 5.337, 3.823, and 4.585 cm⁻¹ for B-doped wafers (thicknesses 692–694 µm), all below 6 cm⁻¹. Silicon-doped GaAs wafers measured 7.057–11.113 cm⁻¹ at 940 nm. At 1000 nm and 1050 nm, boron-doped wafers show absorption coefficients <2 cm⁻¹.
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal wafer substrate
Materials described outside the worked examples.
boron dopant
B
boron-doped polycrystalline GaAs
GaAs:B (polycrystalline)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 940 nm — B-doped GaAs wafer 1 | 5.34 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 2 | 5.337 cm⁻¹ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,276,044 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a vertical gradient freeze 50 reactor, in accordance with an example embodiment of the disclosure.
FIG. 2 illustrates etch pit density results for 6" gallium arsenide wafers manufactured in accordance with an embodiment of the disclosure. 55
FIG. 3 illustrates a flow chart for fabricating gallium arsenide wafers using a vertical gradient freeze process, in accordance with an example embodiment of …
FIG. 4 illustrates devices fabricated on low etch pit density 6 inch semi-insulating gallium arsenide wafers, in 60 accordance with an example embodiment of …
FIG. 60 4 is merely an example. In addition, the die 403 may comprise optoelectronic devices such as edge-emitting lasers, vertical cavity surface- emitting …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal wafer having a boron as a dopant, an average etch pit density of less than 500 cm⁻², and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 200 cm⁻².
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 100 cm⁻².
The wafer according to claim 1, wherein the wafer has a diameter of 6 inches or greater.
The wafer according to claim 1, wherein the wafer has a boron concentration between 1×1019 cm⁻³ and 2×1019 cm⁻³.
The wafer according to claim 1, wherein the wafer has a thickness of 300 µm or greater.
The wafer according to claim 1, wherein electronic and/or optoelectronic devices are formed on a first surface of the wafer.
A semiconductor substrate, the substrate comprising: a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density ranging from 50 cm⁻² to 5000 cm⁻² across the wafer, with an average etch pit density of less than 500 cm⁻², a boron concentration between 1×1019 cm⁻³ and up to 3×1019 cm⁻³, and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a diameter of 6 inches or greater.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a thickness of 300 µm or greater. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
EPD measurements performed per SEMI M₃₆-0699 and ASTM F₁₄₀-92 on 6-inch boron-doped GaAs wafers from two ingots. Average EPD of 50 and 75 cm⁻² (maximum 875 and 1583 cm⁻²) at the seed end, and average EPD of 156 and 164 cm⁻² (maximum 3125 and 4958 cm⁻²) at the tail end.
2 materials
Absorption coefficients measured at 940 nm for boron-doped GaAs wafers (~600 µm nominal thickness): values of 5.340, 5.337, 3.823, and 4.585 cm⁻¹ for B-doped wafers (thicknesses 692–694 µm), all below 6 cm⁻¹. Silicon-doped GaAs wafers measured 7.057–11.113 cm⁻¹ at 940 nm. At 1000 nm and 1050 nm, boron-doped wafers show absorption coefficients <2 cm⁻¹.
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal wafer substrate
Materials described outside the worked examples.
boron dopant
B
boron-doped polycrystalline GaAs
GaAs:B (polycrystalline)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 940 nm — B-doped GaAs wafer 1 | 5.34 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 2 | 5.337 cm⁻¹ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,276,044 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram illustrating a vertical gradient freeze 50 reactor, in accordance with an example embodiment of the disclosure.
FIG. 2 illustrates etch pit density results for 6" gallium arsenide wafers manufactured in accordance with an embodiment of the disclosure. 55
FIG. 3 illustrates a flow chart for fabricating gallium arsenide wafers using a vertical gradient freeze process, in accordance with an example embodiment of …
FIG. 4 illustrates devices fabricated on low etch pit density 6 inch semi-insulating gallium arsenide wafers, in 60 accordance with an example embodiment of …
FIG. 60 4 is merely an example. In addition, the die 403 may comprise optoelectronic devices such as edge-emitting lasers, vertical cavity surface- emitting …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A gallium arsenide single crystal wafer having a boron as a dopant, an average etch pit density of less than 500 cm⁻², and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 200 cm⁻².
The wafer according to claim 1, wherein the wafer has an etch pit density of less than 100 cm⁻².
The wafer according to claim 1, wherein the wafer has a diameter of 6 inches or greater.
The wafer according to claim 1, wherein the wafer has a boron concentration between 1×1019 cm⁻³ and 2×1019 cm⁻³.
The wafer according to claim 1, wherein the wafer has a thickness of 300 µm or greater.
The wafer according to claim 1, wherein electronic and/or optoelectronic devices are formed on a first surface of the wafer.
A semiconductor substrate, the substrate comprising: a gallium arsenide single crystal wafer having boron as a dopant, an etch pit density ranging from 50 cm⁻² to 5000 cm⁻² across the wafer, with an average etch pit density of less than 500 cm⁻², a boron concentration between 1×1019 cm⁻³ and up to 3×1019 cm⁻³, and optical absorption of 6 cm⁻¹ or less at 940 nm, wherein the wafer does not have an intentional dopant other than boron, including silicon.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a diameter of 6 inches or greater.
The semiconductor substrate according to claim 9, wherein the semiconductor substrate has a thickness of 300 µm or greater. ∗ ∗ ∗ ∗ ∗
Embodiments described in the patent, grouped by the materials and process steps they use.
1 material1 process step
EPD measurements performed per SEMI M₃₆-0699 and ASTM F₁₄₀-92 on 6-inch boron-doped GaAs wafers from two ingots. Average EPD of 50 and 75 cm⁻² (maximum 875 and 1583 cm⁻²) at the seed end, and average EPD of 156 and 164 cm⁻² (maximum 3125 and 4958 cm⁻²) at the tail end.
2 materials
Absorption coefficients measured at 940 nm for boron-doped GaAs wafers (~600 µm nominal thickness): values of 5.340, 5.337, 3.823, and 4.585 cm⁻¹ for B-doped wafers (thicknesses 692–694 µm), all below 6 cm⁻¹. Silicon-doped GaAs wafers measured 7.057–11.113 cm⁻¹ at 940 nm. At 1000 nm and 1050 nm, boron-doped wafers show absorption coefficients <2 cm⁻¹.
Layer stacks claimed or described, ordered top of device to substrate.
gallium arsenide single crystal wafer substrate
Materials described outside the worked examples.
boron dopant
B
boron-doped polycrystalline GaAs
GaAs:B (polycrystalline)
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
optical absorption coefficient at 940 nm — B-doped GaAs wafer 1 | 5.34 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 2 | 5.337 cm⁻¹ |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 4
Related documents with shared materials, methods, properties, or citations.
PBN
B₂O₃ encapsulant
B₂O₃
GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 3 | 3.823 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 4 | 4.585 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 1 (comparative) | 10.219 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 2 (comparative) | 9.04 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 3 (comparative) | 7.057 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 4 (comparative) | 11.113 cm⁻¹ | GaAs:Si |
optical absorption coefficient upper bound at 940 nm — B-doped GaAs (claimed) | 6 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1000 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1050 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 50 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 75 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 156 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 164 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 875 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 1583 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 3125 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 4958 cm⁻² | GaAs:B |
Thickness | 300–1000 µm | — |
Thickness | 7–11 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 6 cm | — |
Thickness | ≤ 2 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≤ 5 cm | — |
Thickness | 2–5000 cm | — |
Cited non-patent literature · 2
PBN
B₂O₃ encapsulant
B₂O₃
GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 3 | 3.823 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 4 | 4.585 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 1 (comparative) | 10.219 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 2 (comparative) | 9.04 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 3 (comparative) | 7.057 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 4 (comparative) | 11.113 cm⁻¹ | GaAs:Si |
optical absorption coefficient upper bound at 940 nm — B-doped GaAs (claimed) | 6 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1000 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1050 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 50 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 75 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 156 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 164 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 875 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 1583 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 3125 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 4958 cm⁻² | GaAs:B |
Thickness | 300–1000 µm | — |
Thickness | 7–11 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 6 cm | — |
Thickness | ≤ 2 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≤ 5 cm | — |
Thickness | 2–5000 cm | — |
Cited non-patent literature · 2
PBN
B₂O₃ encapsulant
B₂O₃
GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 3 | 3.823 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 4 | 4.585 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 1 (comparative) | 10.219 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 2 (comparative) | 9.04 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 3 (comparative) | 7.057 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 4 (comparative) | 11.113 cm⁻¹ | GaAs:Si |
optical absorption coefficient upper bound at 940 nm — B-doped GaAs (claimed) | 6 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1000 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1050 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 50 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 75 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 156 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 164 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 875 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 1583 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 3125 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 4958 cm⁻² | GaAs:B |
Thickness | 300–1000 µm | — |
Thickness | 7–11 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 6 cm | — |
Thickness | ≤ 2 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≤ 5 cm | — |
Thickness | 2–5000 cm | — |
Cited non-patent literature · 2
PBN
B₂O₃ encapsulant
B₂O₃
GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 3 | 3.823 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — B-doped GaAs wafer 4 | 4.585 cm⁻¹ | GaAs:B |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 1 (comparative) | 10.219 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 2 (comparative) | 9.04 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 3 (comparative) | 7.057 cm⁻¹ | GaAs:Si |
optical absorption coefficient at 940 nm — Si-doped GaAs wafer 4 (comparative) | 11.113 cm⁻¹ | GaAs:Si |
optical absorption coefficient upper bound at 940 nm — B-doped GaAs (claimed) | 6 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1000 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
optical absorption coefficient at 1050 nm — B-doped GaAs | 2 cm⁻¹ | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 50 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 75 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 156 cm⁻² | GaAs:B |
average EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 164 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 1 | 875 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer seed end ingot 2 | 1583 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 1 | 3125 cm⁻² | GaAs:B |
maximum EPD — B-doped GaAs 6-inch wafer tail end ingot 2 | 4958 cm⁻² | GaAs:B |
Thickness | 300–1000 µm | — |
Thickness | 7–11 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 6 cm | — |
Thickness | ≤ 2 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≤ 5 cm | — |
Thickness | 2–5000 cm | — |
Cited non-patent literature · 2