Patent
US 12,398,486 B2METHOD AND SYSTEM FOR VERTICAL GRADIENT FREEZE 8 INCH GALLIUM ARSENIDE SUBSTRATES
Weiguo Liu, Rajaram Shetty, Wei Zhang
AXT, INC., Fremont, CA (US)·Aug. 26, 2025·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 12,398,486 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates an 8 inch GaAs ingot and head and tail end faces of the ingot, in accordance with an example embodiment of the disclosure.
FIGS. 3A-3D illustrate etch pit density results for 8 inch gallium arsenide wafers manufactured in accordance with an 60 embodiment of the disclosure.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
FIGS. 5A-5F illustrate resistivity maps of 8 inch gallium 65 arsenide substrates, in accordance with an example embodi- ment of the disclosure. B₂
FIG. 6 illustrates a method for fabricating GaAs wafers using the vertical gradient freeze furnace 100 shown in
FIG. 7 illustrates devices fabricated on low etch pit density 8 inch gallium arsenide wafers, in accordance with an example embodiment of the disclosure.
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted, wherein each zone of the multi-zone heating system is enabled to heat the crucible at different temperatures, and wherein each zone of the multi-zone heating system includes two or more heating coils; moving a pedestal relative to the crucible through three or more zones of the multi-zone heating system, the system operable to control heating of the multi-zone heating system and movement of the pedestal; implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed to form a single crystal 8 inch GaAs substrate; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is concave, such that the center is 5-20 mm lower than an edge of the substrate.
The method according to claim 1, further comprising applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface.
The method according to claim 1, wherein moving the pedestal moves the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal rotates the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal moves the crucible vertically relative to the multizone heating system.
The method according to claim 1, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 1, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the solidified charge material at rates of 0.5 to 5 C/h, 1 to C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture.
The method according to claim 1, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted; moving a pedestal relative to the crucible, the system operable to control heating of the multi-zone heating system and movement of the pedestal; and implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is between 5-20 mm B₂ concave, such that the center is 5-20 mm lower than an edge of the substrate to form a single crystal 8 inch GaAs substrate.
The method according to claim 12, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
The method according to claim 12, wherein moving the pedestal moves the crucible relative to the multi-zone heating system.
The method according to claim 12, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 12, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 12, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 12, comprising cool-ing the solidified charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
polycrystalline gallium arsenide
GaAs
boron trioxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD head end, first 8 inch ingot | 1288 cm⁻² | GaAs |
EPD tail end, first 8 inch ingot |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,398,486 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates an 8 inch GaAs ingot and head and tail end faces of the ingot, in accordance with an example embodiment of the disclosure.
FIGS. 3A-3D illustrate etch pit density results for 8 inch gallium arsenide wafers manufactured in accordance with an 60 embodiment of the disclosure.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
FIGS. 5A-5F illustrate resistivity maps of 8 inch gallium 65 arsenide substrates, in accordance with an example embodi- ment of the disclosure. B₂
FIG. 6 illustrates a method for fabricating GaAs wafers using the vertical gradient freeze furnace 100 shown in
FIG. 7 illustrates devices fabricated on low etch pit density 8 inch gallium arsenide wafers, in accordance with an example embodiment of the disclosure.
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted, wherein each zone of the multi-zone heating system is enabled to heat the crucible at different temperatures, and wherein each zone of the multi-zone heating system includes two or more heating coils; moving a pedestal relative to the crucible through three or more zones of the multi-zone heating system, the system operable to control heating of the multi-zone heating system and movement of the pedestal; implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed to form a single crystal 8 inch GaAs substrate; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is concave, such that the center is 5-20 mm lower than an edge of the substrate.
The method according to claim 1, further comprising applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface.
The method according to claim 1, wherein moving the pedestal moves the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal rotates the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal moves the crucible vertically relative to the multizone heating system.
The method according to claim 1, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 1, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the solidified charge material at rates of 0.5 to 5 C/h, 1 to C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture.
The method according to claim 1, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted; moving a pedestal relative to the crucible, the system operable to control heating of the multi-zone heating system and movement of the pedestal; and implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is between 5-20 mm B₂ concave, such that the center is 5-20 mm lower than an edge of the substrate to form a single crystal 8 inch GaAs substrate.
The method according to claim 12, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
The method according to claim 12, wherein moving the pedestal moves the crucible relative to the multi-zone heating system.
The method according to claim 12, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 12, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 12, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 12, comprising cool-ing the solidified charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
polycrystalline gallium arsenide
GaAs
boron trioxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD head end, first 8 inch ingot | 1288 cm⁻² | GaAs |
EPD tail end, first 8 inch ingot |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,398,486 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates an 8 inch GaAs ingot and head and tail end faces of the ingot, in accordance with an example embodiment of the disclosure.
FIGS. 3A-3D illustrate etch pit density results for 8 inch gallium arsenide wafers manufactured in accordance with an 60 embodiment of the disclosure.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
FIGS. 5A-5F illustrate resistivity maps of 8 inch gallium 65 arsenide substrates, in accordance with an example embodi- ment of the disclosure. B₂
FIG. 6 illustrates a method for fabricating GaAs wafers using the vertical gradient freeze furnace 100 shown in
FIG. 7 illustrates devices fabricated on low etch pit density 8 inch gallium arsenide wafers, in accordance with an example embodiment of the disclosure.
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted, wherein each zone of the multi-zone heating system is enabled to heat the crucible at different temperatures, and wherein each zone of the multi-zone heating system includes two or more heating coils; moving a pedestal relative to the crucible through three or more zones of the multi-zone heating system, the system operable to control heating of the multi-zone heating system and movement of the pedestal; implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed to form a single crystal 8 inch GaAs substrate; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is concave, such that the center is 5-20 mm lower than an edge of the substrate.
The method according to claim 1, further comprising applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface.
The method according to claim 1, wherein moving the pedestal moves the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal rotates the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal moves the crucible vertically relative to the multizone heating system.
The method according to claim 1, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 1, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the solidified charge material at rates of 0.5 to 5 C/h, 1 to C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture.
The method according to claim 1, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted; moving a pedestal relative to the crucible, the system operable to control heating of the multi-zone heating system and movement of the pedestal; and implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is between 5-20 mm B₂ concave, such that the center is 5-20 mm lower than an edge of the substrate to form a single crystal 8 inch GaAs substrate.
The method according to claim 12, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
The method according to claim 12, wherein moving the pedestal moves the crucible relative to the multi-zone heating system.
The method according to claim 12, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 12, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 12, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 12, comprising cool-ing the solidified charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
polycrystalline gallium arsenide
GaAs
boron trioxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD head end, first 8 inch ingot | 1288 cm⁻² | GaAs |
EPD tail end, first 8 inch ingot |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,398,486 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 illustrates an 8 inch GaAs ingot and head and tail end faces of the ingot, in accordance with an example embodiment of the disclosure.
FIGS. 3A-3D illustrate etch pit density results for 8 inch gallium arsenide wafers manufactured in accordance with an 60 embodiment of the disclosure.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
FIGS. 5A-5F illustrate resistivity maps of 8 inch gallium 65 arsenide substrates, in accordance with an example embodi- ment of the disclosure. B₂
FIG. 6 illustrates a method for fabricating GaAs wafers using the vertical gradient freeze furnace 100 shown in
FIG. 7 illustrates devices fabricated on low etch pit density 8 inch gallium arsenide wafers, in accordance with an example embodiment of the disclosure.
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted, wherein each zone of the multi-zone heating system is enabled to heat the crucible at different temperatures, and wherein each zone of the multi-zone heating system includes two or more heating coils; moving a pedestal relative to the crucible through three or more zones of the multi-zone heating system, the system operable to control heating of the multi-zone heating system and movement of the pedestal; implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed to form a single crystal 8 inch GaAs substrate; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is concave, such that the center is 5-20 mm lower than an edge of the substrate.
The method according to claim 1, further comprising applying a temperature gradient of between 1 and 8 C/cm at a melt-crystal interface.
The method according to claim 1, wherein moving the pedestal moves the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal rotates the crucible relative to the multi-zone heat-ing system.
The method according to claim 1, wherein moving the pedestal moves the crucible vertically relative to the multizone heating system.
The method according to claim 1, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 1, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 1, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 1, comprising cooling the solidified charge material at rates of 0.5 to 5 C/h, 1 to C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture.
The method according to claim 1, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
A method for forming single crystal gallium arsenide substrates, the method comprising: sealing charge material comprising polycrystalline gal-lium arsenide (GaAs) liquid melt, B₂O₃ encapsulant, and carbon in a crucible; sealing the crucible in a quartz ampoule; performing a vertical gradient freeze crystal growth pro-cess by heating the ampoule using a multi-zone heating system to progressively melt the charge material until a portion of a seed crystal is melted; moving a pedestal relative to the crucible, the system operable to control heating of the multi-zone heating system and movement of the pedestal; and implementing controlled cooling of the multi-zone heat-ing system during growth from the partially melted seed; and controlling a shape of the interface to be concave to the melt utilizing cooling rates in the multi-zone heating system to form a solidified gallium arsenide crystal, wherein the shape of the interface is between 5-20 mm B₂ concave, such that the center is 5-20 mm lower than an edge of the substrate to form a single crystal 8 inch GaAs substrate.
The method according to claim 12, further comprising varying the temperature gradient in different zones of the multi-zone heating system by applying different currents to different heating coils.
The method according to claim 12, wherein moving the pedestal moves the crucible relative to the multi-zone heating system.
The method according to claim 12, further comprising controlling the multi-zone heating system or the pedestal movement to control a crystallization velocity as controlled by the cooling rate may be configured to a range from 0.1-2.0 degrees C./hour.
The method according to claim 12, further comprising forming one or more electronic or optoelectronic devices on a first surface of the substrate.
The method according to claim 12, comprising evacu-ating the crucible before sealing it into the quartz ampoule.
The method according to claim 12, comprising cool-ing the solidified charge material at rates of 0.5 to 5 C/h, 1 to 10 C/h and 5 to 20 C/h for different heating zones of the multi-zone heating system for the first 300 C, and then at rates of 20-50 C/h to room temperature, wherein different heating zones are cooling the charge at a different tempera-ture. ∗ ∗ ∗ ∗ ∗
Materials described outside the worked examples.
polycrystalline gallium arsenide
GaAs
boron trioxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIGS. 4A-4F illustrate photoluminescence measurements of 8 inch gallium arsenide substrates, in accordance with an example embodiment of the disclosure.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EPD head end, first 8 inch ingot | 1288 cm⁻² | GaAs |
EPD tail end, first 8 inch ingot |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
carbon
C
pyrolytic boron nitride crucible
BN
quartz ampoule
SiO₂
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
| 71 cm⁻² |
GaAs |
EPD claimed range for 8 inch GaAs substrate | — | GaAs |
Thickness | 5–20 mm | — |
Thickness | 5–15 mm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 30 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≥ 90 mm | — |
Cited non-patent literature · 2
carbon
C
pyrolytic boron nitride crucible
BN
quartz ampoule
SiO₂
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
| 71 cm⁻² |
GaAs |
EPD claimed range for 8 inch GaAs substrate | — | GaAs |
Thickness | 5–20 mm | — |
Thickness | 5–15 mm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 30 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≥ 90 mm | — |
Cited non-patent literature · 2
carbon
C
pyrolytic boron nitride crucible
BN
quartz ampoule
SiO₂
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
| 71 cm⁻² |
GaAs |
EPD claimed range for 8 inch GaAs substrate | — | GaAs |
Thickness | 5–20 mm | — |
Thickness | 5–15 mm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 30 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≥ 90 mm | — |
Cited non-patent literature · 2
carbon
C
pyrolytic boron nitride crucible
BN
quartz ampoule
SiO₂
FIG. 15 7, there is shown an 8 inch GaAs wafer 701 manufactured using the process described above, and further processed with electrical and/or optoelectronic …
| 71 cm⁻² |
GaAs |
EPD claimed range for 8 inch GaAs substrate | — | GaAs |
Thickness | 5–20 mm | — |
Thickness | 5–15 mm | — |
Thickness | ≤ 1 cm | — |
Thickness | ≤ 500 cm | — |
Thickness | ≤ 200 cm | — |
Thickness | ≤ 30 cm | — |
Pressure | ≤ 0.005 Torr | — |
Thickness | ≥ 90 mm | — |
Cited non-patent literature · 2