Patent
US 9,601,337MANUFACTURING METHOD OF GRAPHENE MODULATED HIGH-K OXIDE AND METAL GATE MOS DEVICE
ZENGFENG DI
US
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US 9,601,337Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, characterized in that the manufacturing method at least comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; 4) forming a metal electrode on the surface of the high-k gate dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the manufacturing method further comprises the following steps: 5) removing part of the metal electrode, the high-k gate dielectric and the fluorinated graphene to form a gate structure of the MOS device; 6) forming a source region and a drain region through an ion implantation technology; 7) manufacturing a source region electrode and a drain region electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the step 1 comprises the following steps: 1-1) growing the graphene thin film on the metal substrate; 1-2) transferring the graphene thin film onto the Ge-based substrate; 1-3) annealing to enhance the bonding of the graphene thin film and the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 1, a chemical vapor deposition method is adopted to grow the graphene thin film in situ on the surface of the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 2, XeF₂ gas is adopted to conduct plasma fluorination treatment to the graphene thin film.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the material of the high-k gate dielectric is an Hf-based dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 4, a physical vapor deposition method is adopted to form the metal electrode, wherein the metal electrode is a Pt electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, after the step 4, the manufacturing method further comprises a step of annealing in an N₂ and 02 atmosphere and conducting interface diffusion and electrical property testing. GUH-246US (14/423234) Page 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene modulated high-k oxide and metal gate Ge-based MOS device
Materials described outside the worked examples.
graphene thin film
Ge-based substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,601,337Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, characterized in that the manufacturing method at least comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; 4) forming a metal electrode on the surface of the high-k gate dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the manufacturing method further comprises the following steps: 5) removing part of the metal electrode, the high-k gate dielectric and the fluorinated graphene to form a gate structure of the MOS device; 6) forming a source region and a drain region through an ion implantation technology; 7) manufacturing a source region electrode and a drain region electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the step 1 comprises the following steps: 1-1) growing the graphene thin film on the metal substrate; 1-2) transferring the graphene thin film onto the Ge-based substrate; 1-3) annealing to enhance the bonding of the graphene thin film and the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 1, a chemical vapor deposition method is adopted to grow the graphene thin film in situ on the surface of the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 2, XeF₂ gas is adopted to conduct plasma fluorination treatment to the graphene thin film.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the material of the high-k gate dielectric is an Hf-based dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 4, a physical vapor deposition method is adopted to form the metal electrode, wherein the metal electrode is a Pt electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, after the step 4, the manufacturing method further comprises a step of annealing in an N₂ and 02 atmosphere and conducting interface diffusion and electrical property testing. GUH-246US (14/423234) Page 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene modulated high-k oxide and metal gate Ge-based MOS device
Materials described outside the worked examples.
graphene thin film
Ge-based substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,601,337Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, characterized in that the manufacturing method at least comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; 4) forming a metal electrode on the surface of the high-k gate dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the manufacturing method further comprises the following steps: 5) removing part of the metal electrode, the high-k gate dielectric and the fluorinated graphene to form a gate structure of the MOS device; 6) forming a source region and a drain region through an ion implantation technology; 7) manufacturing a source region electrode and a drain region electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the step 1 comprises the following steps: 1-1) growing the graphene thin film on the metal substrate; 1-2) transferring the graphene thin film onto the Ge-based substrate; 1-3) annealing to enhance the bonding of the graphene thin film and the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 1, a chemical vapor deposition method is adopted to grow the graphene thin film in situ on the surface of the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 2, XeF₂ gas is adopted to conduct plasma fluorination treatment to the graphene thin film.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the material of the high-k gate dielectric is an Hf-based dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 4, a physical vapor deposition method is adopted to form the metal electrode, wherein the metal electrode is a Pt electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, after the step 4, the manufacturing method further comprises a step of annealing in an N₂ and 02 atmosphere and conducting interface diffusion and electrical property testing. GUH-246US (14/423234) Page 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene modulated high-k oxide and metal gate Ge-based MOS device
Materials described outside the worked examples.
graphene thin film
Ge-based substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,601,337Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A manufacturing method of a graphene modulated high-k oxide and metal gate Ge-based MOS device, characterized in that the manufacturing method at least comprises the following steps: 1) introducing a graphene thin film on a Ge-based substrate; 2) conducting fluorination treatment to the graphene thin film to form a fluorinated graphene insulating thin layer; 3) activating the surface of the fluorinated graphene by adopting ozone plasmas, and then forming a high-k gate dielectric on the surface of the fluorinated graphene through an atomic layer deposition technology; 4) forming a metal electrode on the surface of the high-k gate dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the manufacturing method further comprises the following steps: 5) removing part of the metal electrode, the high-k gate dielectric and the fluorinated graphene to form a gate structure of the MOS device; 6) forming a source region and a drain region through an ion implantation technology; 7) manufacturing a source region electrode and a drain region electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the step 1 comprises the following steps: 1-1) growing the graphene thin film on the metal substrate; 1-2) transferring the graphene thin film onto the Ge-based substrate; 1-3) annealing to enhance the bonding of the graphene thin film and the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 1, a chemical vapor deposition method is adopted to grow the graphene thin film in situ on the surface of the Ge-based substrate.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 2, XeF₂ gas is adopted to conduct plasma fluorination treatment to the graphene thin film.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that the material of the high-k gate dielectric is an Hf-based dielectric.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, in the step 4, a physical vapor deposition method is adopted to form the metal electrode, wherein the metal electrode is a Pt electrode.
The manufacturing method of the graphene modulated high-k oxide and metal gate Ge-based MOS device according to claim 1, characterized in that, after the step 4, the manufacturing method further comprises a step of annealing in an N₂ and 02 atmosphere and conducting interface diffusion and electrical property testing. GUH-246US (14/423234) Page 4
Layer stacks claimed or described, ordered top of device to substrate.
graphene modulated high-k oxide and metal gate Ge-based MOS device
Materials described outside the worked examples.
graphene thin film
Ge-based substrate
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
high-k gate dielectric (Hf-based)
metal electrode (Pt)
Pt
XeF₂
fluorinated graphene insulating thin layer
high-k gate dielectric (Hf-based)
metal electrode (Pt)
Pt
XeF₂
fluorinated graphene insulating thin layer
high-k gate dielectric (Hf-based)
metal electrode (Pt)
Pt
XeF₂
fluorinated graphene insulating thin layer
high-k gate dielectric (Hf-based)
metal electrode (Pt)
Pt
XeF₂
fluorinated graphene insulating thin layer