Patent
US 10,134,630METAL-GRAPHENE HETEROJUNCTION METAL INTERCONNECTS, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE INCLUDING THE SAME
Moon-Ho HAM
US
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Patent
Atlas literature
Patent
US 10,134,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to an exemplary …
FIG. 2 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to another exemplary …
FIG. 3 is a diagram schematically showing a method of forming metal-graphene 30 heterojunction metal interconnects on a plurality of substrates according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a metal-graphene heterojunction metal interconnect, the method comprising: a) forming a carbon source layer by depositing a carbon source on a top surface of a substrate; b) forming a metal catalyst layer by depositing a metal catalyst on the carbon source layer; [[and]] c) synthesizing a graphene with a portion of the carbon source layer in contact with the metal catalyst layer by carrying out heat treatment on the substrate comprising the carbon source layer and the metal catalyst layer; d) removing a portion of the graphene layer and the metal catalyst layer formed on the top surface of the substrate where no metal interconnect is to be formed. Currently amended
The method of claim 1, wherein the substrate has a trench formed therein, wherein the carbon source layer is formed in the trench, and wherein the metal catalyst layer is deposited on the carbon source layer formed in the trench such that the trench is filled with the metal catalyst. Original
The method of claim 1, further comprising: between steps b) and c), b') depositing a carbon source on an exposed surface of the metal catalyst layer. Original
The method of claim 1, comprising: repeating steps a) and b) alternately, wherein another substrate is stacked on the substrate after step b). Original
The method of claim 1, wherein the carbon source comprises at least one selected from the group consisting of: natural graphite, synthetic graphite, highly ordered pyrolytic graphite (HOPG), activated graphite, carbon monoxide, carbon dioxide, methane, ethane, ethylene, methanol, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, pyridine, toluene, polymethyl methacrylate (PMMA), polystyrene, polyacrylonitrile (PAN), PEDOT:P SS, molecules having a polyaromatic hydrocarbon (PAH) structure, methylnaphthalene, hexabromobenzene, naphthalene, terphenyl, pentachloropyridine, tetrabromothiophene, benzopyrene, azulene, trimethylnaphthalene, acenaphthene, acenaphthylene, anthracene, fluorene, phenalene, phenanthrene, benz(a)anthracene, benzo(a)fluorene, benzo(c)phenanthrene, chrysene, fluoranthene, pyrene, tetracene, triphenylene, benz(e)acephenanthrylene, benzofluoranthene, dibenzanthracene, olympicene, pentacene, perylene, picene, tetraphenylene, zethrene, ovalene, kekulene, hexacene, heptacene, diindenoperylene, dicoronylene, coronene, corannulene, benzo(ghi)perylene, anthanthrene, hexamethyl-dihydro-4H-benzoquinolizinoacridine, 4H-benzoquinolizinoacridinetrione, and hexaazatriphenylene-hexacarbonitrile. Original
The method of claim 1, wherein the metal catalyst layer comprises at least one selected from the group consisting of: copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), iridium (I r), brass, bronze and stainless steel. Original
The method of claim 1, wherein the heat treatment is carried out at a temperature from 25 to 400 0 C. Original
The method of claim 1, wherein a heat source for carrying out the heat treatment is at least one selected from a group consisting of a microwave source, an ultraviolet light source, a plasma source, a laser source and a heater. Original
The method of claim 1 [[3]], wherein the removing the portion of the layers formed on the top surface of the substrate is carried out by at least one selected from the group consisting of: polishing, evaporation, wet etching and dry etching. Currently amended
Canceled
Canceled
Canceled
A semiconductor device comprising: a plurality of substrates, wherein each substrate of the plurality of substrates has a trench therein; a plurality of metal catalyst layers, wherein each metal catalyst layer fills the trench of one substrate of the plurality of substrates; and a graphene disposed in contact with all or all but one surfaces of the plurality of metal catalyst layers, wherein the surface of the plurality of metal catalyst layers that is not in contact with the graphene is exposed out of the trench of one substrate of the plurality of substrates, wherein the plurality of substrates are staking on each other, and wherein metal-graphene hetero j unction metal interconnect is formed in each substrate of the plurality of substrates. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene heterojunction metal interconnect
Materials described outside the worked examples.
carbon source
metal catalyst
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 25–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,134,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to an exemplary …
FIG. 2 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to another exemplary …
FIG. 3 is a diagram schematically showing a method of forming metal-graphene 30 heterojunction metal interconnects on a plurality of substrates according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a metal-graphene heterojunction metal interconnect, the method comprising: a) forming a carbon source layer by depositing a carbon source on a top surface of a substrate; b) forming a metal catalyst layer by depositing a metal catalyst on the carbon source layer; [[and]] c) synthesizing a graphene with a portion of the carbon source layer in contact with the metal catalyst layer by carrying out heat treatment on the substrate comprising the carbon source layer and the metal catalyst layer; d) removing a portion of the graphene layer and the metal catalyst layer formed on the top surface of the substrate where no metal interconnect is to be formed. Currently amended
The method of claim 1, wherein the substrate has a trench formed therein, wherein the carbon source layer is formed in the trench, and wherein the metal catalyst layer is deposited on the carbon source layer formed in the trench such that the trench is filled with the metal catalyst. Original
The method of claim 1, further comprising: between steps b) and c), b') depositing a carbon source on an exposed surface of the metal catalyst layer. Original
The method of claim 1, comprising: repeating steps a) and b) alternately, wherein another substrate is stacked on the substrate after step b). Original
The method of claim 1, wherein the carbon source comprises at least one selected from the group consisting of: natural graphite, synthetic graphite, highly ordered pyrolytic graphite (HOPG), activated graphite, carbon monoxide, carbon dioxide, methane, ethane, ethylene, methanol, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, pyridine, toluene, polymethyl methacrylate (PMMA), polystyrene, polyacrylonitrile (PAN), PEDOT:P SS, molecules having a polyaromatic hydrocarbon (PAH) structure, methylnaphthalene, hexabromobenzene, naphthalene, terphenyl, pentachloropyridine, tetrabromothiophene, benzopyrene, azulene, trimethylnaphthalene, acenaphthene, acenaphthylene, anthracene, fluorene, phenalene, phenanthrene, benz(a)anthracene, benzo(a)fluorene, benzo(c)phenanthrene, chrysene, fluoranthene, pyrene, tetracene, triphenylene, benz(e)acephenanthrylene, benzofluoranthene, dibenzanthracene, olympicene, pentacene, perylene, picene, tetraphenylene, zethrene, ovalene, kekulene, hexacene, heptacene, diindenoperylene, dicoronylene, coronene, corannulene, benzo(ghi)perylene, anthanthrene, hexamethyl-dihydro-4H-benzoquinolizinoacridine, 4H-benzoquinolizinoacridinetrione, and hexaazatriphenylene-hexacarbonitrile. Original
The method of claim 1, wherein the metal catalyst layer comprises at least one selected from the group consisting of: copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), iridium (I r), brass, bronze and stainless steel. Original
The method of claim 1, wherein the heat treatment is carried out at a temperature from 25 to 400 0 C. Original
The method of claim 1, wherein a heat source for carrying out the heat treatment is at least one selected from a group consisting of a microwave source, an ultraviolet light source, a plasma source, a laser source and a heater. Original
The method of claim 1 [[3]], wherein the removing the portion of the layers formed on the top surface of the substrate is carried out by at least one selected from the group consisting of: polishing, evaporation, wet etching and dry etching. Currently amended
Canceled
Canceled
Canceled
A semiconductor device comprising: a plurality of substrates, wherein each substrate of the plurality of substrates has a trench therein; a plurality of metal catalyst layers, wherein each metal catalyst layer fills the trench of one substrate of the plurality of substrates; and a graphene disposed in contact with all or all but one surfaces of the plurality of metal catalyst layers, wherein the surface of the plurality of metal catalyst layers that is not in contact with the graphene is exposed out of the trench of one substrate of the plurality of substrates, wherein the plurality of substrates are staking on each other, and wherein metal-graphene hetero j unction metal interconnect is formed in each substrate of the plurality of substrates. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene heterojunction metal interconnect
Materials described outside the worked examples.
carbon source
metal catalyst
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 25–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,134,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to an exemplary …
FIG. 2 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to another exemplary …
FIG. 3 is a diagram schematically showing a method of forming metal-graphene 30 heterojunction metal interconnects on a plurality of substrates according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a metal-graphene heterojunction metal interconnect, the method comprising: a) forming a carbon source layer by depositing a carbon source on a top surface of a substrate; b) forming a metal catalyst layer by depositing a metal catalyst on the carbon source layer; [[and]] c) synthesizing a graphene with a portion of the carbon source layer in contact with the metal catalyst layer by carrying out heat treatment on the substrate comprising the carbon source layer and the metal catalyst layer; d) removing a portion of the graphene layer and the metal catalyst layer formed on the top surface of the substrate where no metal interconnect is to be formed. Currently amended
The method of claim 1, wherein the substrate has a trench formed therein, wherein the carbon source layer is formed in the trench, and wherein the metal catalyst layer is deposited on the carbon source layer formed in the trench such that the trench is filled with the metal catalyst. Original
The method of claim 1, further comprising: between steps b) and c), b') depositing a carbon source on an exposed surface of the metal catalyst layer. Original
The method of claim 1, comprising: repeating steps a) and b) alternately, wherein another substrate is stacked on the substrate after step b). Original
The method of claim 1, wherein the carbon source comprises at least one selected from the group consisting of: natural graphite, synthetic graphite, highly ordered pyrolytic graphite (HOPG), activated graphite, carbon monoxide, carbon dioxide, methane, ethane, ethylene, methanol, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, pyridine, toluene, polymethyl methacrylate (PMMA), polystyrene, polyacrylonitrile (PAN), PEDOT:P SS, molecules having a polyaromatic hydrocarbon (PAH) structure, methylnaphthalene, hexabromobenzene, naphthalene, terphenyl, pentachloropyridine, tetrabromothiophene, benzopyrene, azulene, trimethylnaphthalene, acenaphthene, acenaphthylene, anthracene, fluorene, phenalene, phenanthrene, benz(a)anthracene, benzo(a)fluorene, benzo(c)phenanthrene, chrysene, fluoranthene, pyrene, tetracene, triphenylene, benz(e)acephenanthrylene, benzofluoranthene, dibenzanthracene, olympicene, pentacene, perylene, picene, tetraphenylene, zethrene, ovalene, kekulene, hexacene, heptacene, diindenoperylene, dicoronylene, coronene, corannulene, benzo(ghi)perylene, anthanthrene, hexamethyl-dihydro-4H-benzoquinolizinoacridine, 4H-benzoquinolizinoacridinetrione, and hexaazatriphenylene-hexacarbonitrile. Original
The method of claim 1, wherein the metal catalyst layer comprises at least one selected from the group consisting of: copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), iridium (I r), brass, bronze and stainless steel. Original
The method of claim 1, wherein the heat treatment is carried out at a temperature from 25 to 400 0 C. Original
The method of claim 1, wherein a heat source for carrying out the heat treatment is at least one selected from a group consisting of a microwave source, an ultraviolet light source, a plasma source, a laser source and a heater. Original
The method of claim 1 [[3]], wherein the removing the portion of the layers formed on the top surface of the substrate is carried out by at least one selected from the group consisting of: polishing, evaporation, wet etching and dry etching. Currently amended
Canceled
Canceled
Canceled
A semiconductor device comprising: a plurality of substrates, wherein each substrate of the plurality of substrates has a trench therein; a plurality of metal catalyst layers, wherein each metal catalyst layer fills the trench of one substrate of the plurality of substrates; and a graphene disposed in contact with all or all but one surfaces of the plurality of metal catalyst layers, wherein the surface of the plurality of metal catalyst layers that is not in contact with the graphene is exposed out of the trench of one substrate of the plurality of substrates, wherein the plurality of substrates are staking on each other, and wherein metal-graphene hetero j unction metal interconnect is formed in each substrate of the plurality of substrates. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene heterojunction metal interconnect
Materials described outside the worked examples.
carbon source
metal catalyst
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 25–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,134,630Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to an exemplary …
FIG. 2 is a diagram schematically showing a method of forming a metal-graphene heterojunction metal interconnect on a substrate according to another exemplary …
FIG. 3 is a diagram schematically showing a method of forming metal-graphene 30 heterojunction metal interconnects on a plurality of substrates according to …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a metal-graphene heterojunction metal interconnect, the method comprising: a) forming a carbon source layer by depositing a carbon source on a top surface of a substrate; b) forming a metal catalyst layer by depositing a metal catalyst on the carbon source layer; [[and]] c) synthesizing a graphene with a portion of the carbon source layer in contact with the metal catalyst layer by carrying out heat treatment on the substrate comprising the carbon source layer and the metal catalyst layer; d) removing a portion of the graphene layer and the metal catalyst layer formed on the top surface of the substrate where no metal interconnect is to be formed. Currently amended
The method of claim 1, wherein the substrate has a trench formed therein, wherein the carbon source layer is formed in the trench, and wherein the metal catalyst layer is deposited on the carbon source layer formed in the trench such that the trench is filled with the metal catalyst. Original
The method of claim 1, further comprising: between steps b) and c), b') depositing a carbon source on an exposed surface of the metal catalyst layer. Original
The method of claim 1, comprising: repeating steps a) and b) alternately, wherein another substrate is stacked on the substrate after step b). Original
The method of claim 1, wherein the carbon source comprises at least one selected from the group consisting of: natural graphite, synthetic graphite, highly ordered pyrolytic graphite (HOPG), activated graphite, carbon monoxide, carbon dioxide, methane, ethane, ethylene, methanol, ethanol, acetylene, propane, propylene, butane, butadiene, pentane, pentene, cyclopentadiene, hexane, cyclohexane, benzene, pyridine, toluene, polymethyl methacrylate (PMMA), polystyrene, polyacrylonitrile (PAN), PEDOT:P SS, molecules having a polyaromatic hydrocarbon (PAH) structure, methylnaphthalene, hexabromobenzene, naphthalene, terphenyl, pentachloropyridine, tetrabromothiophene, benzopyrene, azulene, trimethylnaphthalene, acenaphthene, acenaphthylene, anthracene, fluorene, phenalene, phenanthrene, benz(a)anthracene, benzo(a)fluorene, benzo(c)phenanthrene, chrysene, fluoranthene, pyrene, tetracene, triphenylene, benz(e)acephenanthrylene, benzofluoranthene, dibenzanthracene, olympicene, pentacene, perylene, picene, tetraphenylene, zethrene, ovalene, kekulene, hexacene, heptacene, diindenoperylene, dicoronylene, coronene, corannulene, benzo(ghi)perylene, anthanthrene, hexamethyl-dihydro-4H-benzoquinolizinoacridine, 4H-benzoquinolizinoacridinetrione, and hexaazatriphenylene-hexacarbonitrile. Original
The method of claim 1, wherein the metal catalyst layer comprises at least one selected from the group consisting of: copper (Cu), nickel (Ni), iron (Fe), platinum (Pt), aluminum (Al), cobalt (Co), ruthenium (Ru), palladium (Pd), chromium (Cr), manganese (Mn), gold (Au), silver (Ag), molybdenum (Mo), rhodium (Rh), tantalum (Ta), titanium (Ti), tungsten (W), uranium (U), vanadium (V), zirconium (Zr), iridium (I r), brass, bronze and stainless steel. Original
The method of claim 1, wherein the heat treatment is carried out at a temperature from 25 to 400 0 C. Original
The method of claim 1, wherein a heat source for carrying out the heat treatment is at least one selected from a group consisting of a microwave source, an ultraviolet light source, a plasma source, a laser source and a heater. Original
The method of claim 1 [[3]], wherein the removing the portion of the layers formed on the top surface of the substrate is carried out by at least one selected from the group consisting of: polishing, evaporation, wet etching and dry etching. Currently amended
Canceled
Canceled
Canceled
A semiconductor device comprising: a plurality of substrates, wherein each substrate of the plurality of substrates has a trench therein; a plurality of metal catalyst layers, wherein each metal catalyst layer fills the trench of one substrate of the plurality of substrates; and a graphene disposed in contact with all or all but one surfaces of the plurality of metal catalyst layers, wherein the surface of the plurality of metal catalyst layers that is not in contact with the graphene is exposed out of the trench of one substrate of the plurality of substrates, wherein the plurality of substrates are staking on each other, and wherein metal-graphene hetero j unction metal interconnect is formed in each substrate of the plurality of substrates. Currently amended
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
metal-graphene heterojunction metal interconnect
Materials described outside the worked examples.
carbon source
metal catalyst
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 25–400 °C | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
graphene
| 200–400 nm |
| — |
Temperature | ≥ 400 °C | — |
graphene
| 200–400 nm |
| — |
Temperature | ≥ 400 °C | — |
graphene
| 200–400 nm |
| — |
Temperature | ≥ 400 °C | — |
graphene
| 200–400 nm |
| — |
Temperature | ≥ 400 °C | — |