Patent
Atlas literature
Patent
US 11,881,404 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram illustrating 65 a GaN substrate according to an embodiment of the present invention. B₂
FIG. 2 is a simplified cross-sectional diagram illustrating a GaN substrate and a magnesium source according to an embodiment of the present invention.
FIG. 3B is a simplified process flow for fabricating a magnesium diffusion source according to another embodi- ment of the present invention.
FIG. 4 is a simplified cross-sectional diagram illustrating a capped GaN substrate according to an embodiment of the present invention.
FIG. 5 is a simplified cross-sectional diagram illustrating a GaN substrate structure after an annealing process accord- ing to an embodiment of the present …
FIG. 6B is a simplified cross-sectional diagram illustrat- ing a GaN substrate and a p-type doped GaN layer according to an embodiment of the present invention.
FIG. 7 is plot illustrating doping of AlGaN using mag- nesium according to an embodiment of the present inven- tion.
FIG. 8 is a simplified schematic diagram illustrating an engineered substrate structure according to some embodi- ments of the present invention.
FIG. 9 is a simplified flowchart illustrating a method of forming a p-type GaN layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a p-type gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; sputtering a dopant source including magnesium onto the epitaxial gallium nitride layer; patterning the dopant source to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse magnesium into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused magnesium to form the p-type gallium nitride layer.
The method of claim 1 wherein the dopant source comprises a layer of magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 1 wherein the dopant source comprises a layer of an aluminum nitride magnesium com-posite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 1 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 1 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
A method of forming a doped gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; forming a dopant source layer over the epitaxial gallium nitride layer; patterning the dopant source layer to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse dopants into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused dopants.
The method of claim 6 wherein forming the dopant source layer comprises sputtering the dopant source layer over the epitaxial gallium nitride layer.
The method of claim 6 further comprising, prior to forming the dopant source layer, performing a surface preparation process.
The method of claim 6 wherein the epitaxial gallium nitride layer is undoped.
The method of claim 6 wherein the dopant source layer comprises magnesium having a thickness ranging from 5 nm to 20 nm and the epitaxial gallium nitride layer comprises a p-type gallium nitride layer.
The method of claim 6 wherein the dopant source layer comprises magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 6 wherein the dopant source layer comprises an aluminum nitride magnesium composite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 6 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
The method of claim 6 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 6 wherein the dielectric capping structure is operable to anneal magnesium implant damage in the substrate structure.
The method of claim 6 further comprising, prior to forming the dopant source layer, forming a mask on the epitaxial gallium nitride layer, wherein the mask exposes one or more portions of a top surface of the epitaxial gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate structure
Materials described outside the worked examples.
epitaxial gallium nitride layer
GaN
sputtered magnesium metal dopant source
Mg
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–15 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,404 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram illustrating 65 a GaN substrate according to an embodiment of the present invention. B₂
FIG. 2 is a simplified cross-sectional diagram illustrating a GaN substrate and a magnesium source according to an embodiment of the present invention.
FIG. 3B is a simplified process flow for fabricating a magnesium diffusion source according to another embodi- ment of the present invention.
FIG. 4 is a simplified cross-sectional diagram illustrating a capped GaN substrate according to an embodiment of the present invention.
FIG. 5 is a simplified cross-sectional diagram illustrating a GaN substrate structure after an annealing process accord- ing to an embodiment of the present …
FIG. 6B is a simplified cross-sectional diagram illustrat- ing a GaN substrate and a p-type doped GaN layer according to an embodiment of the present invention.
FIG. 7 is plot illustrating doping of AlGaN using mag- nesium according to an embodiment of the present inven- tion.
FIG. 8 is a simplified schematic diagram illustrating an engineered substrate structure according to some embodi- ments of the present invention.
FIG. 9 is a simplified flowchart illustrating a method of forming a p-type GaN layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a p-type gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; sputtering a dopant source including magnesium onto the epitaxial gallium nitride layer; patterning the dopant source to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse magnesium into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused magnesium to form the p-type gallium nitride layer.
The method of claim 1 wherein the dopant source comprises a layer of magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 1 wherein the dopant source comprises a layer of an aluminum nitride magnesium com-posite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 1 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 1 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
A method of forming a doped gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; forming a dopant source layer over the epitaxial gallium nitride layer; patterning the dopant source layer to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse dopants into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused dopants.
The method of claim 6 wherein forming the dopant source layer comprises sputtering the dopant source layer over the epitaxial gallium nitride layer.
The method of claim 6 further comprising, prior to forming the dopant source layer, performing a surface preparation process.
The method of claim 6 wherein the epitaxial gallium nitride layer is undoped.
The method of claim 6 wherein the dopant source layer comprises magnesium having a thickness ranging from 5 nm to 20 nm and the epitaxial gallium nitride layer comprises a p-type gallium nitride layer.
The method of claim 6 wherein the dopant source layer comprises magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 6 wherein the dopant source layer comprises an aluminum nitride magnesium composite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 6 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
The method of claim 6 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 6 wherein the dielectric capping structure is operable to anneal magnesium implant damage in the substrate structure.
The method of claim 6 further comprising, prior to forming the dopant source layer, forming a mask on the epitaxial gallium nitride layer, wherein the mask exposes one or more portions of a top surface of the epitaxial gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate structure
Materials described outside the worked examples.
epitaxial gallium nitride layer
GaN
sputtered magnesium metal dopant source
Mg
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–15 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,404 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram illustrating 65 a GaN substrate according to an embodiment of the present invention. B₂
FIG. 2 is a simplified cross-sectional diagram illustrating a GaN substrate and a magnesium source according to an embodiment of the present invention.
FIG. 3B is a simplified process flow for fabricating a magnesium diffusion source according to another embodi- ment of the present invention.
FIG. 4 is a simplified cross-sectional diagram illustrating a capped GaN substrate according to an embodiment of the present invention.
FIG. 5 is a simplified cross-sectional diagram illustrating a GaN substrate structure after an annealing process accord- ing to an embodiment of the present …
FIG. 6B is a simplified cross-sectional diagram illustrat- ing a GaN substrate and a p-type doped GaN layer according to an embodiment of the present invention.
FIG. 7 is plot illustrating doping of AlGaN using mag- nesium according to an embodiment of the present inven- tion.
FIG. 8 is a simplified schematic diagram illustrating an engineered substrate structure according to some embodi- ments of the present invention.
FIG. 9 is a simplified flowchart illustrating a method of forming a p-type GaN layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a p-type gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; sputtering a dopant source including magnesium onto the epitaxial gallium nitride layer; patterning the dopant source to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse magnesium into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused magnesium to form the p-type gallium nitride layer.
The method of claim 1 wherein the dopant source comprises a layer of magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 1 wherein the dopant source comprises a layer of an aluminum nitride magnesium com-posite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 1 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 1 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
A method of forming a doped gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; forming a dopant source layer over the epitaxial gallium nitride layer; patterning the dopant source layer to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse dopants into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused dopants.
The method of claim 6 wherein forming the dopant source layer comprises sputtering the dopant source layer over the epitaxial gallium nitride layer.
The method of claim 6 further comprising, prior to forming the dopant source layer, performing a surface preparation process.
The method of claim 6 wherein the epitaxial gallium nitride layer is undoped.
The method of claim 6 wherein the dopant source layer comprises magnesium having a thickness ranging from 5 nm to 20 nm and the epitaxial gallium nitride layer comprises a p-type gallium nitride layer.
The method of claim 6 wherein the dopant source layer comprises magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 6 wherein the dopant source layer comprises an aluminum nitride magnesium composite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 6 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
The method of claim 6 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 6 wherein the dielectric capping structure is operable to anneal magnesium implant damage in the substrate structure.
The method of claim 6 further comprising, prior to forming the dopant source layer, forming a mask on the epitaxial gallium nitride layer, wherein the mask exposes one or more portions of a top surface of the epitaxial gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate structure
Materials described outside the worked examples.
epitaxial gallium nitride layer
GaN
sputtered magnesium metal dopant source
Mg
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–15 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,881,404 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a simplified cross-sectional diagram illustrating 65 a GaN substrate according to an embodiment of the present invention. B₂
FIG. 2 is a simplified cross-sectional diagram illustrating a GaN substrate and a magnesium source according to an embodiment of the present invention.
FIG. 3B is a simplified process flow for fabricating a magnesium diffusion source according to another embodi- ment of the present invention.
FIG. 4 is a simplified cross-sectional diagram illustrating a capped GaN substrate according to an embodiment of the present invention.
FIG. 5 is a simplified cross-sectional diagram illustrating a GaN substrate structure after an annealing process accord- ing to an embodiment of the present …
FIG. 6B is a simplified cross-sectional diagram illustrat- ing a GaN substrate and a p-type doped GaN layer according to an embodiment of the present invention.
FIG. 7 is plot illustrating doping of AlGaN using mag- nesium according to an embodiment of the present inven- tion.
FIG. 8 is a simplified schematic diagram illustrating an engineered substrate structure according to some embodi- ments of the present invention.
FIG. 9 is a simplified flowchart illustrating a method of forming a p-type GaN layer according to an embodiment of the present invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of forming a p-type gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; sputtering a dopant source including magnesium onto the epitaxial gallium nitride layer; patterning the dopant source to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse magnesium into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused magnesium to form the p-type gallium nitride layer.
The method of claim 1 wherein the dopant source comprises a layer of magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 1 wherein the dopant source comprises a layer of an aluminum nitride magnesium com-posite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 1 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 1 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
A method of forming a doped gallium nitride layer, the method comprising: providing a substrate structure including an epitaxial gallium nitride layer; forming a dopant source layer over the epitaxial gallium nitride layer; patterning the dopant source layer to form a patterned dopant source region and one or more openings to the epitaxial gallium nitride layer; depositing a dielectric capping structure over the pat-terned dopant source region and the one or more openings; thereafter, annealing the substrate structure at a tempera-ture ranging from about 1000° C. to about 1400° C. to diffuse dopants into the epitaxial gallium nitride layer; removing the dielectric capping structure and the pat-terned dopant source region; and thereafter, activating the diffused dopants.
The method of claim 6 wherein forming the dopant source layer comprises sputtering the dopant source layer over the epitaxial gallium nitride layer.
The method of claim 6 further comprising, prior to forming the dopant source layer, performing a surface preparation process.
The method of claim 6 wherein the epitaxial gallium nitride layer is undoped.
The method of claim 6 wherein the dopant source layer comprises magnesium having a thickness ranging from 5 nm to 20 nm and the epitaxial gallium nitride layer comprises a p-type gallium nitride layer.
The method of claim 6 wherein the dopant source layer comprises magnesium fluoride having a thickness ranging from 20 nm to 50 nm.
The method of claim 6 wherein the dopant source layer comprises an aluminum nitride magnesium composite material having a thickness ranging from 5 nm to 50 nm.
The method of claim 6 wherein the dielectric capping structure comprises AlN/SiO₂ or AlN/SiN.
The method of claim 6 wherein the substrate structure comprises: a polycrystalline ceramic core; a barrier layer encapsulating the polycrystalline ceramic core; a bonding layer coupled to the barrier layer; and a substantially single crystalline layer coupled to the bonding layer.
The method of claim 6 wherein the dielectric capping structure is operable to anneal magnesium implant damage in the substrate structure.
The method of claim 6 further comprising, prior to forming the dopant source layer, forming a mask on the epitaxial gallium nitride layer, wherein the mask exposes one or more portions of a top surface of the epitaxial gallium nitride layer. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
engineered substrate structure
Materials described outside the worked examples.
epitaxial gallium nitride layer
GaN
sputtered magnesium metal dopant source
Mg
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 5–15 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 21
Related documents with shared materials, methods, properties, or citations.
magnesium fluoride dopant source layer
MgF₂
aluminum nitride magnesium composite material
dielectric capping structure AlN/SiO₂
dielectric capping structure AlN/SiN
dielectric capping structure
AlN-Mg co-sputtered source (description)
| 20–50 nm |
| — |
Temperature | 1100–1200 °C | — |
Thickness | 1–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–200 nm | — |
Thickness | 25–200 nm | — |
Thickness | 5–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 10–100 nm | — |
Thickness | 40–300 nm | — |
Thickness | 20–200 nm | — |
Thickness | 60–500 nm | — |
Pressure | 100–2250.186 Torr | — |
Temperature | 1000–1400 °C | — |
Thickness | 50–200 nm | — |
Thickness | 75–100 nm | — |
Thickness | 100–2000 Å | — |
Thickness | 2000–5000 Å | — |
Temperature | 800–1100 °C | — |
Thickness | 5–20 nm | — |
Thickness | 5–50 nm | — |
Temperature | 600–800 °C | — |
Thickness | 100–1500 µm | — |
Thickness | 500–5000 Å | — |
Thickness | 0.75–1.5 µm | — |
Cited non-patent literature · 2
magnesium fluoride dopant source layer
MgF₂
aluminum nitride magnesium composite material
dielectric capping structure AlN/SiO₂
dielectric capping structure AlN/SiN
dielectric capping structure
AlN-Mg co-sputtered source (description)
| 20–50 nm |
| — |
Temperature | 1100–1200 °C | — |
Thickness | 1–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–200 nm | — |
Thickness | 25–200 nm | — |
Thickness | 5–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 10–100 nm | — |
Thickness | 40–300 nm | — |
Thickness | 20–200 nm | — |
Thickness | 60–500 nm | — |
Pressure | 100–2250.186 Torr | — |
Temperature | 1000–1400 °C | — |
Thickness | 50–200 nm | — |
Thickness | 75–100 nm | — |
Thickness | 100–2000 Å | — |
Thickness | 2000–5000 Å | — |
Temperature | 800–1100 °C | — |
Thickness | 5–20 nm | — |
Thickness | 5–50 nm | — |
Temperature | 600–800 °C | — |
Thickness | 100–1500 µm | — |
Thickness | 500–5000 Å | — |
Thickness | 0.75–1.5 µm | — |
Cited non-patent literature · 2
magnesium fluoride dopant source layer
MgF₂
aluminum nitride magnesium composite material
dielectric capping structure AlN/SiO₂
dielectric capping structure AlN/SiN
dielectric capping structure
AlN-Mg co-sputtered source (description)
| 20–50 nm |
| — |
Temperature | 1100–1200 °C | — |
Thickness | 1–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–200 nm | — |
Thickness | 25–200 nm | — |
Thickness | 5–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 10–100 nm | — |
Thickness | 40–300 nm | — |
Thickness | 20–200 nm | — |
Thickness | 60–500 nm | — |
Pressure | 100–2250.186 Torr | — |
Temperature | 1000–1400 °C | — |
Thickness | 50–200 nm | — |
Thickness | 75–100 nm | — |
Thickness | 100–2000 Å | — |
Thickness | 2000–5000 Å | — |
Temperature | 800–1100 °C | — |
Thickness | 5–20 nm | — |
Thickness | 5–50 nm | — |
Temperature | 600–800 °C | — |
Thickness | 100–1500 µm | — |
Thickness | 500–5000 Å | — |
Thickness | 0.75–1.5 µm | — |
Cited non-patent literature · 2
magnesium fluoride dopant source layer
MgF₂
aluminum nitride magnesium composite material
dielectric capping structure AlN/SiO₂
dielectric capping structure AlN/SiN
dielectric capping structure
AlN-Mg co-sputtered source (description)
| 20–50 nm |
| — |
Temperature | 1100–1200 °C | — |
Thickness | 1–20 nm | — |
Thickness | 10–50 nm | — |
Thickness | 100–200 nm | — |
Thickness | 25–200 nm | — |
Thickness | 5–20 µm | — |
Thickness | 2–10 µm | — |
Thickness | 10–100 nm | — |
Thickness | 40–300 nm | — |
Thickness | 20–200 nm | — |
Thickness | 60–500 nm | — |
Pressure | 100–2250.186 Torr | — |
Temperature | 1000–1400 °C | — |
Thickness | 50–200 nm | — |
Thickness | 75–100 nm | — |
Thickness | 100–2000 Å | — |
Thickness | 2000–5000 Å | — |
Temperature | 800–1100 °C | — |
Thickness | 5–20 nm | — |
Thickness | 5–50 nm | — |
Temperature | 600–800 °C | — |
Thickness | 100–1500 µm | — |
Thickness | 500–5000 Å | — |
Thickness | 0.75–1.5 µm | — |
Cited non-patent literature · 2
