Patent
US 10,147,948METHOD FOR FABRICATING GRAPHENE ELECTRODE
Hsiao-Feng HUANG
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,147,948Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a graphene electrode, comprising: providing [[the]] a metal foil; forming [[the]]a graphene layer on the metal foil; and su ec a doping hetero-atoms into a part of the graphene layer to form a hetero-atom doped graphene layer and a non-doped graphene layer. Currently amended
The method as claimed in claim 1, wherein the hetero-atoms comprise nitrogen atoms, phosphorous atoms, boron atoms, or combinations thereof. Original
The method as claimed in claim 1, wherein the hetero-atoms are doped into the surface of the graphene layer, forming the hetero-atom doped graphene layer. Original
The method as claimed in claim 1, wherein the non-doped graphene layer is not doped with the hetero-atoms. Currently amended
The method as claimed in claim 1, wherein the steps for forming the graphene layer comprise: forming the coating on the metal foil, wherein the coating is formed from a graphene- containing composition; and subjecting the coating to a drying process, obtaining the graphene layer. Original
The method as claimed in claim 1, wherein doping hetero- atoms into a part of the graphene layer is performed by a plasma modification process. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
Preparation of graphene electrode (I): DI water (5.3571 g) and CMC binder (0.0337 g) were stirred at 2000 rpm for 20 min. Acetylene black (0.0056 g, Super P) as conducting agent and graphene (0.5 g) were added and stirred for 20 min. SBR binder (0.0562 g) was added and stirred for 20 min to obtain a graphene-containing slurry. The slurry was blade-coated (doctor blade 150 µm) onto a copper foil, then dried at 120°C to form graphene electrode (I) with a graphene layer not doped with any hetero-atom.
1 material1 process step
Graphene electrode (I) from Example 1 was placed into a plasma reactor with the copper foil in direct contact with the support substrate of the plasma reactor, for plasma modification doping of hetero-atoms into the graphene layer surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
energy storage device (lithium ion battery, supercapacitor, or fuel cell)
Materials described outside the worked examples.
metal foil
non-doped graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Hetero Atom Doping Concentration | 0.1–3 atom% | hetero-atom doped graphene layer |
Temperature | 40–150 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,147,948Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a graphene electrode, comprising: providing [[the]] a metal foil; forming [[the]]a graphene layer on the metal foil; and su ec a doping hetero-atoms into a part of the graphene layer to form a hetero-atom doped graphene layer and a non-doped graphene layer. Currently amended
The method as claimed in claim 1, wherein the hetero-atoms comprise nitrogen atoms, phosphorous atoms, boron atoms, or combinations thereof. Original
The method as claimed in claim 1, wherein the hetero-atoms are doped into the surface of the graphene layer, forming the hetero-atom doped graphene layer. Original
The method as claimed in claim 1, wherein the non-doped graphene layer is not doped with the hetero-atoms. Currently amended
The method as claimed in claim 1, wherein the steps for forming the graphene layer comprise: forming the coating on the metal foil, wherein the coating is formed from a graphene- containing composition; and subjecting the coating to a drying process, obtaining the graphene layer. Original
The method as claimed in claim 1, wherein doping hetero- atoms into a part of the graphene layer is performed by a plasma modification process. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
Preparation of graphene electrode (I): DI water (5.3571 g) and CMC binder (0.0337 g) were stirred at 2000 rpm for 20 min. Acetylene black (0.0056 g, Super P) as conducting agent and graphene (0.5 g) were added and stirred for 20 min. SBR binder (0.0562 g) was added and stirred for 20 min to obtain a graphene-containing slurry. The slurry was blade-coated (doctor blade 150 µm) onto a copper foil, then dried at 120°C to form graphene electrode (I) with a graphene layer not doped with any hetero-atom.
1 material1 process step
Graphene electrode (I) from Example 1 was placed into a plasma reactor with the copper foil in direct contact with the support substrate of the plasma reactor, for plasma modification doping of hetero-atoms into the graphene layer surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
energy storage device (lithium ion battery, supercapacitor, or fuel cell)
Materials described outside the worked examples.
metal foil
non-doped graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Hetero Atom Doping Concentration | 0.1–3 atom% | hetero-atom doped graphene layer |
Temperature | 40–150 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,147,948Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a graphene electrode, comprising: providing [[the]] a metal foil; forming [[the]]a graphene layer on the metal foil; and su ec a doping hetero-atoms into a part of the graphene layer to form a hetero-atom doped graphene layer and a non-doped graphene layer. Currently amended
The method as claimed in claim 1, wherein the hetero-atoms comprise nitrogen atoms, phosphorous atoms, boron atoms, or combinations thereof. Original
The method as claimed in claim 1, wherein the hetero-atoms are doped into the surface of the graphene layer, forming the hetero-atom doped graphene layer. Original
The method as claimed in claim 1, wherein the non-doped graphene layer is not doped with the hetero-atoms. Currently amended
The method as claimed in claim 1, wherein the steps for forming the graphene layer comprise: forming the coating on the metal foil, wherein the coating is formed from a graphene- containing composition; and subjecting the coating to a drying process, obtaining the graphene layer. Original
The method as claimed in claim 1, wherein doping hetero- atoms into a part of the graphene layer is performed by a plasma modification process. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
Preparation of graphene electrode (I): DI water (5.3571 g) and CMC binder (0.0337 g) were stirred at 2000 rpm for 20 min. Acetylene black (0.0056 g, Super P) as conducting agent and graphene (0.5 g) were added and stirred for 20 min. SBR binder (0.0562 g) was added and stirred for 20 min to obtain a graphene-containing slurry. The slurry was blade-coated (doctor blade 150 µm) onto a copper foil, then dried at 120°C to form graphene electrode (I) with a graphene layer not doped with any hetero-atom.
1 material1 process step
Graphene electrode (I) from Example 1 was placed into a plasma reactor with the copper foil in direct contact with the support substrate of the plasma reactor, for plasma modification doping of hetero-atoms into the graphene layer surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
energy storage device (lithium ion battery, supercapacitor, or fuel cell)
Materials described outside the worked examples.
metal foil
non-doped graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Hetero Atom Doping Concentration | 0.1–3 atom% | hetero-atom doped graphene layer |
Temperature | 40–150 °C |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,147,948Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for fabricating a graphene electrode, comprising: providing [[the]] a metal foil; forming [[the]]a graphene layer on the metal foil; and su ec a doping hetero-atoms into a part of the graphene layer to form a hetero-atom doped graphene layer and a non-doped graphene layer. Currently amended
The method as claimed in claim 1, wherein the hetero-atoms comprise nitrogen atoms, phosphorous atoms, boron atoms, or combinations thereof. Original
The method as claimed in claim 1, wherein the hetero-atoms are doped into the surface of the graphene layer, forming the hetero-atom doped graphene layer. Original
The method as claimed in claim 1, wherein the non-doped graphene layer is not doped with the hetero-atoms. Currently amended
The method as claimed in claim 1, wherein the steps for forming the graphene layer comprise: forming the coating on the metal foil, wherein the coating is formed from a graphene- containing composition; and subjecting the coating to a drying process, obtaining the graphene layer. Original
The method as claimed in claim 1, wherein doping hetero- atoms into a part of the graphene layer is performed by a plasma modification process. Currently amended
Canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials1 process step
Preparation of graphene electrode (I): DI water (5.3571 g) and CMC binder (0.0337 g) were stirred at 2000 rpm for 20 min. Acetylene black (0.0056 g, Super P) as conducting agent and graphene (0.5 g) were added and stirred for 20 min. SBR binder (0.0562 g) was added and stirred for 20 min to obtain a graphene-containing slurry. The slurry was blade-coated (doctor blade 150 µm) onto a copper foil, then dried at 120°C to form graphene electrode (I) with a graphene layer not doped with any hetero-atom.
1 material1 process step
Graphene electrode (I) from Example 1 was placed into a plasma reactor with the copper foil in direct contact with the support substrate of the plasma reactor, for plasma modification doping of hetero-atoms into the graphene layer surface.
Layer stacks claimed or described, ordered top of device to substrate.
graphene electrode
energy storage device (lithium ion battery, supercapacitor, or fuel cell)
Materials described outside the worked examples.
metal foil
non-doped graphene layer
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Hetero Atom Doping Concentration | 0.1–3 atom% | hetero-atom doped graphene layer |
Temperature | 40–150 °C |
Related documents with shared materials, methods, properties, or citations.
hetero-atom doped graphene layer
hetero-atoms (nitrogen, phosphorous, boron)
graphene-containing composition
binder
conducting agent (graphite or carbon black)
reactive gas (nitrogen gas, ammonia gas, air)
additional reactive gas (argon, hydrogen, oxygen)
carrier gas (helium, argon, nitrogen, neon)
non-doped graphene layer (single-layer graphene or graphene nanosheets)
| — |
Graphene Composite Electrodes for Energy Storage Devices
hetero-atom doped graphene layer
hetero-atoms (nitrogen, phosphorous, boron)
graphene-containing composition
binder
conducting agent (graphite or carbon black)
reactive gas (nitrogen gas, ammonia gas, air)
additional reactive gas (argon, hydrogen, oxygen)
carrier gas (helium, argon, nitrogen, neon)
non-doped graphene layer (single-layer graphene or graphene nanosheets)
| — |
Graphene Composite Electrodes for Energy Storage Devices
hetero-atom doped graphene layer
hetero-atoms (nitrogen, phosphorous, boron)
graphene-containing composition
binder
conducting agent (graphite or carbon black)
reactive gas (nitrogen gas, ammonia gas, air)
additional reactive gas (argon, hydrogen, oxygen)
carrier gas (helium, argon, nitrogen, neon)
non-doped graphene layer (single-layer graphene or graphene nanosheets)
| — |
Graphene Composite Electrodes for Energy Storage Devices
hetero-atom doped graphene layer
hetero-atoms (nitrogen, phosphorous, boron)
graphene-containing composition
binder
conducting agent (graphite or carbon black)
reactive gas (nitrogen gas, ammonia gas, air)
additional reactive gas (argon, hydrogen, oxygen)
carrier gas (helium, argon, nitrogen, neon)
non-doped graphene layer (single-layer graphene or graphene nanosheets)
| — |
Graphene Composite Electrodes for Energy Storage Devices