Patent
US 7,772,059METHOD FOR FABRICATING GRAPHENE TRANSISTORS ON A SILICON OR SOI SUBSTRATE
Ashesh Parikh, Andrew Marshall
2010-08-10·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 7,772,059Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-11. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
1 2. A method of fabricating a transistor device, comprising the steps of: providing a substrate forming an upper silicon layer mesa island at a surface of the substrate: forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into graphene layers; after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; forming gate oxide between the source/drain regions on the graphene layers; and forming gate material over the gate oxide.
The method of claim 12, wherein the substrate is a S OI substrate.
1 5. A method for semiconductor processing, comprising the steps of: (a) providing an SOI substrate (b) performing a threshold implant on the SOI substrate (c) forming an upper silicon layer mesa island at a surface of the SOI substrate: (d) forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into said graphene layers; 3 Application No. 12/015,358 Reply to Non-Final Action/Amendment (e) after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; (f) forming gate oxide between the source/drain regions on the graphene; and (g) forming gate material over the gate oxide; (h) creating a transistor edge; (i) depositing dielectric onto the transistor edge; repeating (a) through (i) a predetermined number of times; and performing back end processing.
The method of claim 15, wherein the process of forming the mesa island comprises: depositing, patterning and etching mesa forming photoresist; forming the upper silicon layer mesa island using a mesa etch; and removing the mesa forming photoresist.
The method of claim 15, wherein the threshold implant on the S OI substrate comprises: depositing, patterning and etching threshold implant photoresist; performing the optional threshold implant; and removing the threshold implant photoresist.
1 8. The method of claim 15, wherein the carbonizing silicon layer into SiC utilizing a gaseous source comprises: placing the SOI substrate in a reactor consisting of a quartz vessel and a graphite body therein; heating the graphite body to a specified temperature; and passing a gaseous mixture over the SOI substrate.
The method of claim 15, wherein the gaseous mixture comprises: 0.1 to 5% by volume hydrocarbons; 0.01 to 1 % by volume water or water-releasing compounds; 0.1 to 5% by volume silicon halides or organosilanes; and hydrogen.
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
silicon carbide (SiC)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,772,059Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-11. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
1 2. A method of fabricating a transistor device, comprising the steps of: providing a substrate forming an upper silicon layer mesa island at a surface of the substrate: forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into graphene layers; after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; forming gate oxide between the source/drain regions on the graphene layers; and forming gate material over the gate oxide.
The method of claim 12, wherein the substrate is a S OI substrate.
1 5. A method for semiconductor processing, comprising the steps of: (a) providing an SOI substrate (b) performing a threshold implant on the SOI substrate (c) forming an upper silicon layer mesa island at a surface of the SOI substrate: (d) forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into said graphene layers; 3 Application No. 12/015,358 Reply to Non-Final Action/Amendment (e) after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; (f) forming gate oxide between the source/drain regions on the graphene; and (g) forming gate material over the gate oxide; (h) creating a transistor edge; (i) depositing dielectric onto the transistor edge; repeating (a) through (i) a predetermined number of times; and performing back end processing.
The method of claim 15, wherein the process of forming the mesa island comprises: depositing, patterning and etching mesa forming photoresist; forming the upper silicon layer mesa island using a mesa etch; and removing the mesa forming photoresist.
The method of claim 15, wherein the threshold implant on the S OI substrate comprises: depositing, patterning and etching threshold implant photoresist; performing the optional threshold implant; and removing the threshold implant photoresist.
1 8. The method of claim 15, wherein the carbonizing silicon layer into SiC utilizing a gaseous source comprises: placing the SOI substrate in a reactor consisting of a quartz vessel and a graphite body therein; heating the graphite body to a specified temperature; and passing a gaseous mixture over the SOI substrate.
The method of claim 15, wherein the gaseous mixture comprises: 0.1 to 5% by volume hydrocarbons; 0.01 to 1 % by volume water or water-releasing compounds; 0.1 to 5% by volume silicon halides or organosilanes; and hydrogen.
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
silicon carbide (SiC)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,772,059Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-11. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
1 2. A method of fabricating a transistor device, comprising the steps of: providing a substrate forming an upper silicon layer mesa island at a surface of the substrate: forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into graphene layers; after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; forming gate oxide between the source/drain regions on the graphene layers; and forming gate material over the gate oxide.
The method of claim 12, wherein the substrate is a S OI substrate.
1 5. A method for semiconductor processing, comprising the steps of: (a) providing an SOI substrate (b) performing a threshold implant on the SOI substrate (c) forming an upper silicon layer mesa island at a surface of the SOI substrate: (d) forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into said graphene layers; 3 Application No. 12/015,358 Reply to Non-Final Action/Amendment (e) after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; (f) forming gate oxide between the source/drain regions on the graphene; and (g) forming gate material over the gate oxide; (h) creating a transistor edge; (i) depositing dielectric onto the transistor edge; repeating (a) through (i) a predetermined number of times; and performing back end processing.
The method of claim 15, wherein the process of forming the mesa island comprises: depositing, patterning and etching mesa forming photoresist; forming the upper silicon layer mesa island using a mesa etch; and removing the mesa forming photoresist.
The method of claim 15, wherein the threshold implant on the S OI substrate comprises: depositing, patterning and etching threshold implant photoresist; performing the optional threshold implant; and removing the threshold implant photoresist.
1 8. The method of claim 15, wherein the carbonizing silicon layer into SiC utilizing a gaseous source comprises: placing the SOI substrate in a reactor consisting of a quartz vessel and a graphite body therein; heating the graphite body to a specified temperature; and passing a gaseous mixture over the SOI substrate.
The method of claim 15, wherein the gaseous mixture comprises: 0.1 to 5% by volume hydrocarbons; 0.01 to 1 % by volume water or water-releasing compounds; 0.1 to 5% by volume silicon halides or organosilanes; and hydrogen.
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
silicon carbide (SiC)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,772,059Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-11. canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
1 2. A method of fabricating a transistor device, comprising the steps of: providing a substrate forming an upper silicon layer mesa island at a surface of the substrate: forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into graphene layers; after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; forming gate oxide between the source/drain regions on the graphene layers; and forming gate material over the gate oxide.
The method of claim 12, wherein the substrate is a S OI substrate.
1 5. A method for semiconductor processing, comprising the steps of: (a) providing an SOI substrate (b) performing a threshold implant on the SOI substrate (c) forming an upper silicon layer mesa island at a surface of the SOI substrate: (d) forming graphene layers by first carbonizing the silicon layer into SiC utilizing a gaseous source and then converting the SiC into said graphene layers; 3 Application No. 12/015,358 Reply to Non-Final Action/Amendment (e) after forming the graphene layers, forming source/drain regions by depositing source/drain material on opposite longitudinal ends of the graphene layers and ion implanting the source/drain material; (f) forming gate oxide between the source/drain regions on the graphene; and (g) forming gate material over the gate oxide; (h) creating a transistor edge; (i) depositing dielectric onto the transistor edge; repeating (a) through (i) a predetermined number of times; and performing back end processing.
The method of claim 15, wherein the process of forming the mesa island comprises: depositing, patterning and etching mesa forming photoresist; forming the upper silicon layer mesa island using a mesa etch; and removing the mesa forming photoresist.
The method of claim 15, wherein the threshold implant on the S OI substrate comprises: depositing, patterning and etching threshold implant photoresist; performing the optional threshold implant; and removing the threshold implant photoresist.
1 8. The method of claim 15, wherein the carbonizing silicon layer into SiC utilizing a gaseous source comprises: placing the SOI substrate in a reactor consisting of a quartz vessel and a graphite body therein; heating the graphite body to a specified temperature; and passing a gaseous mixture over the SOI substrate.
The method of claim 15, wherein the gaseous mixture comprises: 0.1 to 5% by volume hydrocarbons; 0.01 to 1 % by volume water or water-releasing compounds; 0.1 to 5% by volume silicon halides or organosilanes; and hydrogen.
Layer stacks claimed or described, ordered top of device to substrate.
graphene field-effect transistor
Materials described outside the worked examples.
graphene
silicon carbide (SiC)
SiC
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
gate oxide
gate material
SOI substrate
dielectric
hydrocarbons
water or water-releasing compounds
silicon halides or organosilanes
hydrogen
H₂
gate oxide
gate material
SOI substrate
dielectric
hydrocarbons
water or water-releasing compounds
silicon halides or organosilanes
hydrogen
H₂
gate oxide
gate material
SOI substrate
dielectric
hydrocarbons
water or water-releasing compounds
silicon halides or organosilanes
hydrogen
H₂
gate oxide
gate material
SOI substrate
dielectric
hydrocarbons
water or water-releasing compounds
silicon halides or organosilanes
hydrogen
H₂