Patent
US 8,283,673METHOD FOR MANUFACTURING A LAYER OF GALLIUM NITRIDE OR GALLIUM AND ALUMINUM NITRIDE
Hacene Lahreche
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,283,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a structure comprising a crack-free layer of gallium nitride in conformance with the prior art,
Figure 2 schematically illustrates a structure in conformance with the invention,
Figure 3 represents an electronic device constructed from the structure of the invention, and -5-
Figure 4 illustrates another configuration of the electronic device in conformance with the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising a crack-free monocrystalline nitride layer having the composition A l xGa 1_ N, where 0 x 0.3, and a substrate that is likely to generate tensile stress in the nitride layer, the structure successively comprising: the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation layer; a monocrystalline seed layer of an AIBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%; and the monocrystalline nitride layer.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.05 and 1.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.2 and 0.35.
The structure according to claim 1, wherein the monocrystalline nitride layer has a thickness of between 800 nm and 7 micrometers.
The structure according to claim 1, wherein the intermediate layer is aluminum or gallium nitride.
The structure according to claim 1, wherein the intermediate layer is aluminum nitride having an aluminum content of between 1 and 35%.
The structure according to claim 1, wherein the intermediate layer has a thickness that is equal to or greater than 250 nm.
-17- 8. The structure according to claim 1, wherein the seed layer has a thickness of between and 250 nm.
The structure according to claim 1, wherein the seed layer has a relaxation rate at ambient temperature of between 50 and 75%.
The structure according to claim 1, wherein the monocrystalline nitride layer comprises 3 to 5% of aluminum and wherein the structure further successively comprises, on the monocrystallilne nitride layer: a gallium nitride channel layer; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the structure further successively comprises, on the monocrystalline nitride layer: a channel layer of ScN; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the monocrystalline nitride layer is gallium nitride and wherein the structure further comprises, on the gallium nitride layer, a barrier layer of AIGaN, AIInN or BGaN.
A device comprising the structure of claim 1 and provided in the form of a photovoltaic component, an electroluminescent diode, a Schottky diode, a laser, an optical detector, or an MEMS.
A field effect transistor comprising the structure of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
crack-free nitride structure
HEMT structure with AlxGa₁-xN buffer and GaN channel
Materials described outside the worked examples.
AlxGa₁-xN nitride layer
AlxGa₁-xN
nucleation layer
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–250 nm | — |
Thickness | 1.8–2.2 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a structure comprising a crack-free layer of gallium nitride in conformance with the prior art,
Figure 2 schematically illustrates a structure in conformance with the invention,
Figure 3 represents an electronic device constructed from the structure of the invention, and -5-
Figure 4 illustrates another configuration of the electronic device in conformance with the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising a crack-free monocrystalline nitride layer having the composition A l xGa 1_ N, where 0 x 0.3, and a substrate that is likely to generate tensile stress in the nitride layer, the structure successively comprising: the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation layer; a monocrystalline seed layer of an AIBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%; and the monocrystalline nitride layer.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.05 and 1.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.2 and 0.35.
The structure according to claim 1, wherein the monocrystalline nitride layer has a thickness of between 800 nm and 7 micrometers.
The structure according to claim 1, wherein the intermediate layer is aluminum or gallium nitride.
The structure according to claim 1, wherein the intermediate layer is aluminum nitride having an aluminum content of between 1 and 35%.
The structure according to claim 1, wherein the intermediate layer has a thickness that is equal to or greater than 250 nm.
-17- 8. The structure according to claim 1, wherein the seed layer has a thickness of between and 250 nm.
The structure according to claim 1, wherein the seed layer has a relaxation rate at ambient temperature of between 50 and 75%.
The structure according to claim 1, wherein the monocrystalline nitride layer comprises 3 to 5% of aluminum and wherein the structure further successively comprises, on the monocrystallilne nitride layer: a gallium nitride channel layer; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the structure further successively comprises, on the monocrystalline nitride layer: a channel layer of ScN; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the monocrystalline nitride layer is gallium nitride and wherein the structure further comprises, on the gallium nitride layer, a barrier layer of AIGaN, AIInN or BGaN.
A device comprising the structure of claim 1 and provided in the form of a photovoltaic component, an electroluminescent diode, a Schottky diode, a laser, an optical detector, or an MEMS.
A field effect transistor comprising the structure of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
crack-free nitride structure
HEMT structure with AlxGa₁-xN buffer and GaN channel
Materials described outside the worked examples.
AlxGa₁-xN nitride layer
AlxGa₁-xN
nucleation layer
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–250 nm | — |
Thickness | 1.8–2.2 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a structure comprising a crack-free layer of gallium nitride in conformance with the prior art,
Figure 2 schematically illustrates a structure in conformance with the invention,
Figure 3 represents an electronic device constructed from the structure of the invention, and -5-
Figure 4 illustrates another configuration of the electronic device in conformance with the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising a crack-free monocrystalline nitride layer having the composition A l xGa 1_ N, where 0 x 0.3, and a substrate that is likely to generate tensile stress in the nitride layer, the structure successively comprising: the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation layer; a monocrystalline seed layer of an AIBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%; and the monocrystalline nitride layer.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.05 and 1.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.2 and 0.35.
The structure according to claim 1, wherein the monocrystalline nitride layer has a thickness of between 800 nm and 7 micrometers.
The structure according to claim 1, wherein the intermediate layer is aluminum or gallium nitride.
The structure according to claim 1, wherein the intermediate layer is aluminum nitride having an aluminum content of between 1 and 35%.
The structure according to claim 1, wherein the intermediate layer has a thickness that is equal to or greater than 250 nm.
-17- 8. The structure according to claim 1, wherein the seed layer has a thickness of between and 250 nm.
The structure according to claim 1, wherein the seed layer has a relaxation rate at ambient temperature of between 50 and 75%.
The structure according to claim 1, wherein the monocrystalline nitride layer comprises 3 to 5% of aluminum and wherein the structure further successively comprises, on the monocrystallilne nitride layer: a gallium nitride channel layer; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the structure further successively comprises, on the monocrystalline nitride layer: a channel layer of ScN; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the monocrystalline nitride layer is gallium nitride and wherein the structure further comprises, on the gallium nitride layer, a barrier layer of AIGaN, AIInN or BGaN.
A device comprising the structure of claim 1 and provided in the form of a photovoltaic component, an electroluminescent diode, a Schottky diode, a laser, an optical detector, or an MEMS.
A field effect transistor comprising the structure of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
crack-free nitride structure
HEMT structure with AlxGa₁-xN buffer and GaN channel
Materials described outside the worked examples.
AlxGa₁-xN nitride layer
AlxGa₁-xN
nucleation layer
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–250 nm | — |
Thickness | 1.8–2.2 µm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,283,673Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 shows a structure comprising a crack-free layer of gallium nitride in conformance with the prior art,
Figure 2 schematically illustrates a structure in conformance with the invention,
Figure 3 represents an electronic device constructed from the structure of the invention, and -5-
Figure 4 illustrates another configuration of the electronic device in conformance with the invention.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A structure comprising a crack-free monocrystalline nitride layer having the composition A l xGa 1_ N, where 0 x 0.3, and a substrate that is likely to generate tensile stress in the nitride layer, the structure successively comprising: the substrate; a nucleation layer; a monocrystalline intermediate layer having a selected thickness on the nucleation layer; a monocrystalline seed layer of an AIBN compound in which the boron content is between 0 and 10% having a selected thickness on the intermediate layer and a relaxation rate, at ambient temperature, of less than 80%; and the monocrystalline nitride layer.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.05 and 1.
The structure according to claim 1, wherein the seed and intermediate layers are present at a thickness ratio of between 0.2 and 0.35.
The structure according to claim 1, wherein the monocrystalline nitride layer has a thickness of between 800 nm and 7 micrometers.
The structure according to claim 1, wherein the intermediate layer is aluminum or gallium nitride.
The structure according to claim 1, wherein the intermediate layer is aluminum nitride having an aluminum content of between 1 and 35%.
The structure according to claim 1, wherein the intermediate layer has a thickness that is equal to or greater than 250 nm.
-17- 8. The structure according to claim 1, wherein the seed layer has a thickness of between and 250 nm.
The structure according to claim 1, wherein the seed layer has a relaxation rate at ambient temperature of between 50 and 75%.
The structure according to claim 1, wherein the monocrystalline nitride layer comprises 3 to 5% of aluminum and wherein the structure further successively comprises, on the monocrystallilne nitride layer: a gallium nitride channel layer; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the structure further successively comprises, on the monocrystalline nitride layer: a channel layer of ScN; and a barrier layer of AIGaN, AIInN or BGaN.
The structure according to claim 1, wherein the monocrystalline nitride layer is gallium nitride and wherein the structure further comprises, on the gallium nitride layer, a barrier layer of AIGaN, AIInN or BGaN.
A device comprising the structure of claim 1 and provided in the form of a photovoltaic component, an electroluminescent diode, a Schottky diode, a laser, an optical detector, or an MEMS.
A field effect transistor comprising the structure of claim 1.
Layer stacks claimed or described, ordered top of device to substrate.
crack-free nitride structure
HEMT structure with AlxGa₁-xN buffer and GaN channel
Materials described outside the worked examples.
AlxGa₁-xN nitride layer
AlxGa₁-xN
nucleation layer
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 30–250 nm | — |
Thickness | 1.8–2.2 µm |
Related documents with shared materials, methods, properties, or citations.
HEMT structure with ScN channel
GaN-based structure with barrier layer
field effect transistor
intermediate layer
AlGaN
AlBN seed layer
AlBN
substrate
gallium nitride channel layer
GaN
barrier layer
ScN channel layer
ScN
| — |
Thickness | 5–100 nm | — |
Thickness | 100–7000 nm | — |
Thickness | 800–7000 nm | — |
Thickness | 5–30 nm | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 30 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 250 nm | — |
HEMT structure with ScN channel
GaN-based structure with barrier layer
field effect transistor
intermediate layer
AlGaN
AlBN seed layer
AlBN
substrate
gallium nitride channel layer
GaN
barrier layer
ScN channel layer
ScN
| — |
Thickness | 5–100 nm | — |
Thickness | 100–7000 nm | — |
Thickness | 800–7000 nm | — |
Thickness | 5–30 nm | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 30 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 250 nm | — |
HEMT structure with ScN channel
GaN-based structure with barrier layer
field effect transistor
intermediate layer
AlGaN
AlBN seed layer
AlBN
substrate
gallium nitride channel layer
GaN
barrier layer
ScN channel layer
ScN
| — |
Thickness | 5–100 nm | — |
Thickness | 100–7000 nm | — |
Thickness | 800–7000 nm | — |
Thickness | 5–30 nm | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 30 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 250 nm | — |
HEMT structure with ScN channel
GaN-based structure with barrier layer
field effect transistor
intermediate layer
AlGaN
AlBN seed layer
AlBN
substrate
gallium nitride channel layer
GaN
barrier layer
ScN channel layer
ScN
| — |
Thickness | 5–100 nm | — |
Thickness | 100–7000 nm | — |
Thickness | 800–7000 nm | — |
Thickness | 5–30 nm | — |
Thickness | ≤ 250 nm | — |
Thickness | ≤ 30 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | ≥ 250 nm | — |