1, (Currently Amended) A method for manufacturing a graphene ei ectroma g ne tic wave bloc ki- ng plate, the method comp rising: formin g a first graphene layer a rn d a second graphene layer respec ti vely on and beneath a catalyst metal layer; attaching a support substrate to the second graphene layer; patte m ing a t-le ast-e-& til e first graphene SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.12.1381.1781.1476.1831.svg 0.167 0.317 Chemistry Black and white and the catalyst metal layer; and SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.13.949.1900.1446.1952.svg 0.173 1.657 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.15.313.2145.1966.2200.svg 0.183 5.51 Chemistry Black and white removing the support ming thefirst g ra phene layer and the catalyst metal la yeCr i5 p erformed so as to for m a meta l patt ern and a grap hene pattern on the th e grap hm ene patte rn a the second gap hene lay er.

, Canceled

(Curr SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.730.2770.752.2794.svg 0.08 0.073 Chemistry Black and white en tl Amended) The method accord i ng to claim SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.1833.2761.1972.2812.svg 0.17 0.463 Chemistry Black and white wherein the patte rn ing includes: SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.2143.804.2248.853.svg 0.163 0.35 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.720.804.873.855.svg 0.17 0.51 Chemistry Black and white Reply to Office Action of form in g a resist pattern o n the fir st grap hen e lay er; etching the first SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.4.807.681.999.732.svg 0.17 0.64 Chemistry Black and white lay er exposed throu g h holes o f the resist p att ern; etchin g the metal layer exp o sed v ia the etching of the first graphene and removin g the resist pattern.

(C urre ntly Amended) The metho d according to claim [[2]]_L wherein the patter ni ng includes pat tering the first gr aphene an d t he catalyst metal layer i nto the same shape. SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.9.1371.1416.1467.1464.svg 0.16 0.32 Chemistry Black and white Currently amended

The m ethod according to claim I, fu rther comprisin g remo ving the first graph en e layer. Original

(Ori g ina l) The m ethod according to clai m 5, wherein the patte rn ing includes patte ming th e cat alyst metal layer exposed via re mov al of the first gra p hene l ayer. Original

The method according to cl aim 1, wherein the patterned layer takes the form of a hole pattern or a mesh pattern, Original

9, The method according to claim i, wherein the paiterned layer has holes having a diameter of 5 mm or less. Original

10, A microwave oven having a heating space, the microwave oven com p risi ng: a front panel con:gured to close a front side of the heating space, the front panel having an observation opening; a cover panel disposed on the front panel to cover the observation opening; and an electromagnetic wave blocking pla te disposed on the cover panel, wherein the electromag n etic wave biocking plate y includes: a graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.3.15.1397.2269.1477.2313.svg 0.147 0.267 Chemistry Black and white a metal pattern on the gra p hene lave g r a gi raphene patte rn on the metal pattern, Currently amended

., Canceled

The microwave oven according to claim { {3]] 10, wherein the metal pattern is a hole pattern or a mesh pattern. Currently amended

A method for manufacturing a graphene electronmagnetic wave blocking plate, t he method comprising: forming a fir st g raphene layer and a sec ond g r aphene layer respectively on a first and a second surface of a catalyst metal layer; at tachin g an adhesive su ppo rt su bstrate to the sec ond graphene la yer; forming a resist pattern including holes on the first graphene layer; etching the first graphene layer exposed through b oles of the resist patte rn; etc h ing the catalyst metal layer exposed through the etching of the f i rst graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.5.11.2224.1670.2244.1696.svg 0.087 0.067 Chemistry Black and white removing the resist patte rn; and removing the adhesive su p port substrate 1 wherein the first graphene layer a rn d the catalyst meta l layer are patte rn ed identically through the resist patte rn to form a catalyst metal pattern and a graphene patte rn, respectively, and wherein the catalyst metal patte rn is located between the graphene patte rn and the second graphene layer. New

The method according to clair 19, wherein the h oles of the resist pattern each have a diameter of 5 mm or less. New

The method accordling to claim, wherein the c atalyst metal layer is formed of a metal capable of growing graphene and shielding electromagnetic waves. 7 New

1, (Currently Amended) A method for manufacturing a graphene ei ectroma g ne tic wave bloc ki- ng plate, the method comp rising: formin g a first graphene layer a rn d a second graphene layer respec ti vely on and beneath a catalyst metal layer; attaching a support substrate to the second graphene layer; patte m ing a t-le ast-e-& til e first graphene SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.12.1381.1781.1476.1831.svg 0.167 0.317 Chemistry Black and white and the catalyst metal layer; and SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.13.949.1900.1446.1952.svg 0.173 1.657 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.15.313.2145.1966.2200.svg 0.183 5.51 Chemistry Black and white removing the support ming thefirst g ra phene layer and the catalyst metal la yeCr i5 p erformed so as to for m a meta l patt ern and a grap hene pattern on the th e grap hm ene patte rn a the second gap hene lay er.

, Canceled

(Curr SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.730.2770.752.2794.svg 0.08 0.073 Chemistry Black and white en tl Amended) The method accord i ng to claim SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.1833.2761.1972.2812.svg 0.17 0.463 Chemistry Black and white wherein the patte rn ing includes: SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.2143.804.2248.853.svg 0.163 0.35 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.720.804.873.855.svg 0.17 0.51 Chemistry Black and white Reply to Office Action of form in g a resist pattern o n the fir st grap hen e lay er; etching the first SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.4.807.681.999.732.svg 0.17 0.64 Chemistry Black and white lay er exposed throu g h holes o f the resist p att ern; etchin g the metal layer exp o sed v ia the etching of the first graphene and removin g the resist pattern.

(C urre ntly Amended) The metho d according to claim [[2]]_L wherein the patter ni ng includes pat tering the first gr aphene an d t he catalyst metal layer i nto the same shape. SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.9.1371.1416.1467.1464.svg 0.16 0.32 Chemistry Black and white Currently amended

The m ethod according to claim I, fu rther comprisin g remo ving the first graph en e layer. Original

(Ori g ina l) The m ethod according to clai m 5, wherein the patte rn ing includes patte ming th e cat alyst metal layer exposed via re mov al of the first gra p hene l ayer. Original

The method according to cl aim 1, wherein the patterned layer takes the form of a hole pattern or a mesh pattern, Original

9, The method according to claim i, wherein the paiterned layer has holes having a diameter of 5 mm or less. Original

10, A microwave oven having a heating space, the microwave oven com p risi ng: a front panel con:gured to close a front side of the heating space, the front panel having an observation opening; a cover panel disposed on the front panel to cover the observation opening; and an electromagnetic wave blocking pla te disposed on the cover panel, wherein the electromag n etic wave biocking plate y includes: a graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.3.15.1397.2269.1477.2313.svg 0.147 0.267 Chemistry Black and white a metal pattern on the gra p hene lave g r a gi raphene patte rn on the metal pattern, Currently amended

., Canceled

The microwave oven according to claim { {3]] 10, wherein the metal pattern is a hole pattern or a mesh pattern. Currently amended

A method for manufacturing a graphene electronmagnetic wave blocking plate, t he method comprising: forming a fir st g raphene layer and a sec ond g r aphene layer respectively on a first and a second surface of a catalyst metal layer; at tachin g an adhesive su ppo rt su bstrate to the sec ond graphene la yer; forming a resist pattern including holes on the first graphene layer; etching the first graphene layer exposed through b oles of the resist patte rn; etc h ing the catalyst metal layer exposed through the etching of the f i rst graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.5.11.2224.1670.2244.1696.svg 0.087 0.067 Chemistry Black and white removing the resist patte rn; and removing the adhesive su p port substrate 1 wherein the first graphene layer a rn d the catalyst meta l layer are patte rn ed identically through the resist patte rn to form a catalyst metal pattern and a graphene patte rn, respectively, and wherein the catalyst metal patte rn is located between the graphene patte rn and the second graphene layer. New

The method according to clair 19, wherein the h oles of the resist pattern each have a diameter of 5 mm or less. New

The method accordling to claim, wherein the c atalyst metal layer is formed of a metal capable of growing graphene and shielding electromagnetic waves. 7 New

1, (Currently Amended) A method for manufacturing a graphene ei ectroma g ne tic wave bloc ki- ng plate, the method comp rising: formin g a first graphene layer a rn d a second graphene layer respec ti vely on and beneath a catalyst metal layer; attaching a support substrate to the second graphene layer; patte m ing a t-le ast-e-& til e first graphene SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.12.1381.1781.1476.1831.svg 0.167 0.317 Chemistry Black and white and the catalyst metal layer; and SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.13.949.1900.1446.1952.svg 0.173 1.657 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.15.313.2145.1966.2200.svg 0.183 5.51 Chemistry Black and white removing the support ming thefirst g ra phene layer and the catalyst metal la yeCr i5 p erformed so as to for m a meta l patt ern and a grap hene pattern on the th e grap hm ene patte rn a the second gap hene lay er.

, Canceled

(Curr SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.730.2770.752.2794.svg 0.08 0.073 Chemistry Black and white en tl Amended) The method accord i ng to claim SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.1833.2761.1972.2812.svg 0.17 0.463 Chemistry Black and white wherein the patte rn ing includes: SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.2143.804.2248.853.svg 0.163 0.35 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.720.804.873.855.svg 0.17 0.51 Chemistry Black and white Reply to Office Action of form in g a resist pattern o n the fir st grap hen e lay er; etching the first SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.4.807.681.999.732.svg 0.17 0.64 Chemistry Black and white lay er exposed throu g h holes o f the resist p att ern; etchin g the metal layer exp o sed v ia the etching of the first graphene and removin g the resist pattern.

(C urre ntly Amended) The metho d according to claim [[2]]_L wherein the patter ni ng includes pat tering the first gr aphene an d t he catalyst metal layer i nto the same shape. SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.9.1371.1416.1467.1464.svg 0.16 0.32 Chemistry Black and white Currently amended

The m ethod according to claim I, fu rther comprisin g remo ving the first graph en e layer. Original

(Ori g ina l) The m ethod according to clai m 5, wherein the patte rn ing includes patte ming th e cat alyst metal layer exposed via re mov al of the first gra p hene l ayer. Original

The method according to cl aim 1, wherein the patterned layer takes the form of a hole pattern or a mesh pattern, Original

9, The method according to claim i, wherein the paiterned layer has holes having a diameter of 5 mm or less. Original

10, A microwave oven having a heating space, the microwave oven com p risi ng: a front panel con:gured to close a front side of the heating space, the front panel having an observation opening; a cover panel disposed on the front panel to cover the observation opening; and an electromagnetic wave blocking pla te disposed on the cover panel, wherein the electromag n etic wave biocking plate y includes: a graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.3.15.1397.2269.1477.2313.svg 0.147 0.267 Chemistry Black and white a metal pattern on the gra p hene lave g r a gi raphene patte rn on the metal pattern, Currently amended

., Canceled

The microwave oven according to claim { {3]] 10, wherein the metal pattern is a hole pattern or a mesh pattern. Currently amended

A method for manufacturing a graphene electronmagnetic wave blocking plate, t he method comprising: forming a fir st g raphene layer and a sec ond g r aphene layer respectively on a first and a second surface of a catalyst metal layer; at tachin g an adhesive su ppo rt su bstrate to the sec ond graphene la yer; forming a resist pattern including holes on the first graphene layer; etching the first graphene layer exposed through b oles of the resist patte rn; etc h ing the catalyst metal layer exposed through the etching of the f i rst graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.5.11.2224.1670.2244.1696.svg 0.087 0.067 Chemistry Black and white removing the resist patte rn; and removing the adhesive su p port substrate 1 wherein the first graphene layer a rn d the catalyst meta l layer are patte rn ed identically through the resist patte rn to form a catalyst metal pattern and a graphene patte rn, respectively, and wherein the catalyst metal patte rn is located between the graphene patte rn and the second graphene layer. New

The method according to clair 19, wherein the h oles of the resist pattern each have a diameter of 5 mm or less. New

The method accordling to claim, wherein the c atalyst metal layer is formed of a metal capable of growing graphene and shielding electromagnetic waves. 7 New

1, (Currently Amended) A method for manufacturing a graphene ei ectroma g ne tic wave bloc ki- ng plate, the method comp rising: formin g a first graphene layer a rn d a second graphene layer respec ti vely on and beneath a catalyst metal layer; attaching a support substrate to the second graphene layer; patte m ing a t-le ast-e-& til e first graphene SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.12.1381.1781.1476.1831.svg 0.167 0.317 Chemistry Black and white and the catalyst metal layer; and SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.13.949.1900.1446.1952.svg 0.173 1.657 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.15.313.2145.1966.2200.svg 0.183 5.51 Chemistry Black and white removing the support ming thefirst g ra phene layer and the catalyst metal la yeCr i5 p erformed so as to for m a meta l patt ern and a grap hene pattern on the th e grap hm ene patte rn a the second gap hene lay er.

, Canceled

(Curr SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.730.2770.752.2794.svg 0.08 0.073 Chemistry Black and white en tl Amended) The method accord i ng to claim SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.1.18.1833.2761.1972.2812.svg 0.17 0.463 Chemistry Black and white wherein the patte rn ing includes: SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.2143.804.2248.853.svg 0.163 0.35 Chemistry Black and white SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.5.720.804.873.855.svg 0.17 0.51 Chemistry Black and white Reply to Office Action of form in g a resist pattern o n the fir st grap hen e lay er; etching the first SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.4.807.681.999.732.svg 0.17 0.64 Chemistry Black and white lay er exposed throu g h holes o f the resist p att ern; etchin g the metal layer exp o sed v ia the etching of the first graphene and removin g the resist pattern.

(C urre ntly Amended) The metho d according to claim [[2]]_L wherein the patter ni ng includes pat tering the first gr aphene an d t he catalyst metal layer i nto the same shape. SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.2.9.1371.1416.1467.1464.svg 0.16 0.32 Chemistry Black and white Currently amended

The m ethod according to claim I, fu rther comprisin g remo ving the first graph en e layer. Original

(Ori g ina l) The m ethod according to clai m 5, wherein the patte rn ing includes patte ming th e cat alyst metal layer exposed via re mov al of the first gra p hene l ayer. Original

The method according to cl aim 1, wherein the patterned layer takes the form of a hole pattern or a mesh pattern, Original

9, The method according to claim i, wherein the paiterned layer has holes having a diameter of 5 mm or less. Original

10, A microwave oven having a heating space, the microwave oven com p risi ng: a front panel con:gured to close a front side of the heating space, the front panel having an observation opening; a cover panel disposed on the front panel to cover the observation opening; and an electromagnetic wave blocking pla te disposed on the cover panel, wherein the electromag n etic wave biocking plate y includes: a graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.3.15.1397.2269.1477.2313.svg 0.147 0.267 Chemistry Black and white a metal pattern on the gra p hene lave g r a gi raphene patte rn on the metal pattern, Currently amended

., Canceled

The microwave oven according to claim { {3]] 10, wherein the metal pattern is a hole pattern or a mesh pattern. Currently amended

A method for manufacturing a graphene electronmagnetic wave blocking plate, t he method comprising: forming a fir st g raphene layer and a sec ond g r aphene layer respectively on a first and a second surface of a catalyst metal layer; at tachin g an adhesive su ppo rt su bstrate to the sec ond graphene la yer; forming a resist pattern including holes on the first graphene layer; etching the first graphene layer exposed through b oles of the resist patte rn; etc h ing the catalyst metal layer exposed through the etching of the f i rst graphene layer; SVG 14430593.10-11-2017.J₈N₈₁N₈₄RXEAPX1.CLM.5.11.2224.1670.2244.1696.svg 0.087 0.067 Chemistry Black and white removing the resist patte rn; and removing the adhesive su p port substrate 1 wherein the first graphene layer a rn d the catalyst meta l layer are patte rn ed identically through the resist patte rn to form a catalyst metal pattern and a graphene patte rn, respectively, and wherein the catalyst metal patte rn is located between the graphene patte rn and the second graphene layer. New

The method according to clair 19, wherein the h oles of the resist pattern each have a diameter of 5 mm or less. New

The method accordling to claim, wherein the c atalyst metal layer is formed of a metal capable of growing graphene and shielding electromagnetic waves. 7 New