Patent
US 8,650,749METHOD FOR MANUFACTURING GRAPHENE ELECTRONICS
Ernesto E. Marinero
2014-02-18·US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,650,749Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A method for manufacturing an electrical circuit structure, comprising: 2 forming first and second electrically conductive contact pads; 3 forming a plurality of graphene layers, the plurality of graphene layers being 4 electrically separated from the first and second elect r ically conductive 5 contact layers; and 6 forming a single graphene layer over the plurality of graphene layers, the single 7 graphene layer extending beyond the plurality of graphene layers to 8 contact the first and second elect r ically conductive contacts.
1 2. The method of claim 1 further comprising, before forming the first and second 2 electrically conductive contacts and before for m ing the graphene layer, providing 3 a substrate and fonning first, second and th i rd wells in the substrate; and 4 wherein the first and second contacts are for m ed in the first and third wells and 5 the plurality of graphene layers is formed in the second well.
1 5. A method for manufacturing an electrical circuit structure, compr i s i ng: 2 forming a plurality of graphene layers; 3 forming a mask structure over the plurality of graphene layers; 4 perfonning a material removal process on a portion of the layers of graphene not 5 protected by the mask, leaving at least one of the graphene layers intact; 6 and 7 fo rc ing an electrically conductive lead structure to contact the at least one intact 8 graphene layer.
1 6. A method as in claim 5 further comprising, after performing the material removal 2 process and before forming the electrically conductive lead structure, forming an 3 electrically insulating material to cover the removed portions of the graphene 4 layers, while leaving a portion of the at least one intact graphene layer exposed.
1 7. A method as in claim 5 wherein the electrically conductive lead material contacts 2 the exposed portion of the at least one intact graphene layer.
1 I 1 P₃₆₆AHSJ₉-2008-0116 JS 2 16 1 9. A layer graphene layer is a 2 single layer of graphene graphene layers.
1 10. A circuit structure comprising: 2 a plurality another, the plurality of graphene 3 layers including and second electrical contacts, both of the first and connected with two adjacent graphene layers of bi-layer graphene structure.
Layer stacks claimed or described, ordered top of device to substrate.
electrical circuit structure with graphene multilayer and single graphene layer contacts
electrical circuit structure with selectively etched graphene and conductive lead
Materials described outside the worked examples.
graphene (plurality of layers)
single graphene layer
Patent
Atlas literature
Patent
US 8,650,749Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A method for manufacturing an electrical circuit structure, comprising: 2 forming first and second electrically conductive contact pads; 3 forming a plurality of graphene layers, the plurality of graphene layers being 4 electrically separated from the first and second elect r ically conductive 5 contact layers; and 6 forming a single graphene layer over the plurality of graphene layers, the single 7 graphene layer extending beyond the plurality of graphene layers to 8 contact the first and second elect r ically conductive contacts.
1 2. The method of claim 1 further comprising, before forming the first and second 2 electrically conductive contacts and before for m ing the graphene layer, providing 3 a substrate and fonning first, second and th i rd wells in the substrate; and 4 wherein the first and second contacts are for m ed in the first and third wells and 5 the plurality of graphene layers is formed in the second well.
1 5. A method for manufacturing an electrical circuit structure, compr i s i ng: 2 forming a plurality of graphene layers; 3 forming a mask structure over the plurality of graphene layers; 4 perfonning a material removal process on a portion of the layers of graphene not 5 protected by the mask, leaving at least one of the graphene layers intact; 6 and 7 fo rc ing an electrically conductive lead structure to contact the at least one intact 8 graphene layer.
1 6. A method as in claim 5 further comprising, after performing the material removal 2 process and before forming the electrically conductive lead structure, forming an 3 electrically insulating material to cover the removed portions of the graphene 4 layers, while leaving a portion of the at least one intact graphene layer exposed.
1 7. A method as in claim 5 wherein the electrically conductive lead material contacts 2 the exposed portion of the at least one intact graphene layer.
1 I 1 P₃₆₆AHSJ₉-2008-0116 JS 2 16 1 9. A layer graphene layer is a 2 single layer of graphene graphene layers.
1 10. A circuit structure comprising: 2 a plurality another, the plurality of graphene 3 layers including and second electrical contacts, both of the first and connected with two adjacent graphene layers of bi-layer graphene structure.
Layer stacks claimed or described, ordered top of device to substrate.
electrical circuit structure with graphene multilayer and single graphene layer contacts
electrical circuit structure with selectively etched graphene and conductive lead
Materials described outside the worked examples.
graphene (plurality of layers)
single graphene layer
Patent
Atlas literature
Patent
US 8,650,749Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A method for manufacturing an electrical circuit structure, comprising: 2 forming first and second electrically conductive contact pads; 3 forming a plurality of graphene layers, the plurality of graphene layers being 4 electrically separated from the first and second elect r ically conductive 5 contact layers; and 6 forming a single graphene layer over the plurality of graphene layers, the single 7 graphene layer extending beyond the plurality of graphene layers to 8 contact the first and second elect r ically conductive contacts.
1 2. The method of claim 1 further comprising, before forming the first and second 2 electrically conductive contacts and before for m ing the graphene layer, providing 3 a substrate and fonning first, second and th i rd wells in the substrate; and 4 wherein the first and second contacts are for m ed in the first and third wells and 5 the plurality of graphene layers is formed in the second well.
1 5. A method for manufacturing an electrical circuit structure, compr i s i ng: 2 forming a plurality of graphene layers; 3 forming a mask structure over the plurality of graphene layers; 4 perfonning a material removal process on a portion of the layers of graphene not 5 protected by the mask, leaving at least one of the graphene layers intact; 6 and 7 fo rc ing an electrically conductive lead structure to contact the at least one intact 8 graphene layer.
1 6. A method as in claim 5 further comprising, after performing the material removal 2 process and before forming the electrically conductive lead structure, forming an 3 electrically insulating material to cover the removed portions of the graphene 4 layers, while leaving a portion of the at least one intact graphene layer exposed.
1 7. A method as in claim 5 wherein the electrically conductive lead material contacts 2 the exposed portion of the at least one intact graphene layer.
1 I 1 P₃₆₆AHSJ₉-2008-0116 JS 2 16 1 9. A layer graphene layer is a 2 single layer of graphene graphene layers.
1 10. A circuit structure comprising: 2 a plurality another, the plurality of graphene 3 layers including and second electrical contacts, both of the first and connected with two adjacent graphene layers of bi-layer graphene structure.
Layer stacks claimed or described, ordered top of device to substrate.
electrical circuit structure with graphene multilayer and single graphene layer contacts
electrical circuit structure with selectively etched graphene and conductive lead
Materials described outside the worked examples.
graphene (plurality of layers)
single graphene layer
Patent
Atlas literature
Patent
US 8,650,749Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1 1. A method for manufacturing an electrical circuit structure, comprising: 2 forming first and second electrically conductive contact pads; 3 forming a plurality of graphene layers, the plurality of graphene layers being 4 electrically separated from the first and second elect r ically conductive 5 contact layers; and 6 forming a single graphene layer over the plurality of graphene layers, the single 7 graphene layer extending beyond the plurality of graphene layers to 8 contact the first and second elect r ically conductive contacts.
1 2. The method of claim 1 further comprising, before forming the first and second 2 electrically conductive contacts and before for m ing the graphene layer, providing 3 a substrate and fonning first, second and th i rd wells in the substrate; and 4 wherein the first and second contacts are for m ed in the first and third wells and 5 the plurality of graphene layers is formed in the second well.
1 5. A method for manufacturing an electrical circuit structure, compr i s i ng: 2 forming a plurality of graphene layers; 3 forming a mask structure over the plurality of graphene layers; 4 perfonning a material removal process on a portion of the layers of graphene not 5 protected by the mask, leaving at least one of the graphene layers intact; 6 and 7 fo rc ing an electrically conductive lead structure to contact the at least one intact 8 graphene layer.
1 6. A method as in claim 5 further comprising, after performing the material removal 2 process and before forming the electrically conductive lead structure, forming an 3 electrically insulating material to cover the removed portions of the graphene 4 layers, while leaving a portion of the at least one intact graphene layer exposed.
1 7. A method as in claim 5 wherein the electrically conductive lead material contacts 2 the exposed portion of the at least one intact graphene layer.
1 I 1 P₃₆₆AHSJ₉-2008-0116 JS 2 16 1 9. A layer graphene layer is a 2 single layer of graphene graphene layers.
1 10. A circuit structure comprising: 2 a plurality another, the plurality of graphene 3 layers including and second electrical contacts, both of the first and connected with two adjacent graphene layers of bi-layer graphene structure.
Layer stacks claimed or described, ordered top of device to substrate.
electrical circuit structure with graphene multilayer and single graphene layer contacts
electrical circuit structure with selectively etched graphene and conductive lead
Materials described outside the worked examples.
graphene (plurality of layers)
single graphene layer
circuit structure with bi-layer graphene and electrical contacts
silicon
Si
electrically insulating material
oxide layer
circuit structure with bi-layer graphene and electrical contacts
silicon
Si
electrically insulating material
oxide layer
circuit structure with bi-layer graphene and electrical contacts
silicon
Si
electrically insulating material
oxide layer
circuit structure with bi-layer graphene and electrical contacts
silicon
Si
electrically insulating material
oxide layer