Patent
US 9,633,899METHOD FOR PATTERNING A GRAPHENE LAYER AND METHOD FOR MANUFACTURING A DISPLAY SUBSTRATE
Shi SHU
US
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Atlas literature
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US 9,633,899Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for patterning a graphene layer, comprising: forming the graphene layer on a resin base, forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer to form the resin base with the patterned graphene layer, wherein the method further comprises: forming the graphene layer with a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 1, further comprises: peeling off the patterned photoresist layer after etching the isolation layer according to the patterned photoresist layer to form the patterned isolation layer.
The method according to claim 1, further comprises: transferring the patterned graphene layer on the resin base film to a substrate via a transfer process; and removing the resin base at the resin film.
The method according to claim 1, wherein the step forming the graphene layer _ on with the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.
The method according to claim 1, wherein the step of forming the graphene layer on with the resin base comprises: depositing a graphene material on a metal base to form the graphene layer; spin-coating a resin material on the graphene layer to form the resin base; and etching and removing the metal base.
The method according to claim 1, wherein the isolation layer is formed of an inorganic silicon compound material -
The method according to claim 1, wherein the graphene layer is formed on a substrate.
1 2. The method according to claim 1, wherein the material of the isolation layer is a metal material.
1 4. A method for manufacturing a display substrate, comprising manufacturing a structure formed of the patterned graphene layer by the method according to claim 1.
Serial No. 14/513,324 Page 3 of 10 canceled
A method for patterning a graphene layer, comprising: forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer, wherein the method further comprises: forming the graphene layer on a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 15, wherein the step forming the graphene layer on the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer. Serial No. 14/513,324 Page 6 of
Materials described outside the worked examples.
graphene
C
resin base
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,633,899Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for patterning a graphene layer, comprising: forming the graphene layer on a resin base, forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer to form the resin base with the patterned graphene layer, wherein the method further comprises: forming the graphene layer with a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 1, further comprises: peeling off the patterned photoresist layer after etching the isolation layer according to the patterned photoresist layer to form the patterned isolation layer.
The method according to claim 1, further comprises: transferring the patterned graphene layer on the resin base film to a substrate via a transfer process; and removing the resin base at the resin film.
The method according to claim 1, wherein the step forming the graphene layer _ on with the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.
The method according to claim 1, wherein the step of forming the graphene layer on with the resin base comprises: depositing a graphene material on a metal base to form the graphene layer; spin-coating a resin material on the graphene layer to form the resin base; and etching and removing the metal base.
The method according to claim 1, wherein the isolation layer is formed of an inorganic silicon compound material -
The method according to claim 1, wherein the graphene layer is formed on a substrate.
1 2. The method according to claim 1, wherein the material of the isolation layer is a metal material.
1 4. A method for manufacturing a display substrate, comprising manufacturing a structure formed of the patterned graphene layer by the method according to claim 1.
Serial No. 14/513,324 Page 3 of 10 canceled
A method for patterning a graphene layer, comprising: forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer, wherein the method further comprises: forming the graphene layer on a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 15, wherein the step forming the graphene layer on the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer. Serial No. 14/513,324 Page 6 of
Materials described outside the worked examples.
graphene
C
resin base
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,633,899Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for patterning a graphene layer, comprising: forming the graphene layer on a resin base, forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer to form the resin base with the patterned graphene layer, wherein the method further comprises: forming the graphene layer with a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 1, further comprises: peeling off the patterned photoresist layer after etching the isolation layer according to the patterned photoresist layer to form the patterned isolation layer.
The method according to claim 1, further comprises: transferring the patterned graphene layer on the resin base film to a substrate via a transfer process; and removing the resin base at the resin film.
The method according to claim 1, wherein the step forming the graphene layer _ on with the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.
The method according to claim 1, wherein the step of forming the graphene layer on with the resin base comprises: depositing a graphene material on a metal base to form the graphene layer; spin-coating a resin material on the graphene layer to form the resin base; and etching and removing the metal base.
The method according to claim 1, wherein the isolation layer is formed of an inorganic silicon compound material -
The method according to claim 1, wherein the graphene layer is formed on a substrate.
1 2. The method according to claim 1, wherein the material of the isolation layer is a metal material.
1 4. A method for manufacturing a display substrate, comprising manufacturing a structure formed of the patterned graphene layer by the method according to claim 1.
Serial No. 14/513,324 Page 3 of 10 canceled
A method for patterning a graphene layer, comprising: forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer, wherein the method further comprises: forming the graphene layer on a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 15, wherein the step forming the graphene layer on the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer. Serial No. 14/513,324 Page 6 of
Materials described outside the worked examples.
graphene
C
resin base
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,633,899Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1. A method for patterning a graphene layer, comprising: forming the graphene layer on a resin base, forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer to form the resin base with the patterned graphene layer, wherein the method further comprises: forming the graphene layer with a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 1, further comprises: peeling off the patterned photoresist layer after etching the isolation layer according to the patterned photoresist layer to form the patterned isolation layer.
The method according to claim 1, further comprises: transferring the patterned graphene layer on the resin base film to a substrate via a transfer process; and removing the resin base at the resin film.
The method according to claim 1, wherein the step forming the graphene layer _ on with the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer.
The method according to claim 1, wherein the step of forming the graphene layer on with the resin base comprises: depositing a graphene material on a metal base to form the graphene layer; spin-coating a resin material on the graphene layer to form the resin base; and etching and removing the metal base.
The method according to claim 1, wherein the isolation layer is formed of an inorganic silicon compound material -
The method according to claim 1, wherein the graphene layer is formed on a substrate.
1 2. The method according to claim 1, wherein the material of the isolation layer is a metal material.
1 4. A method for manufacturing a display substrate, comprising manufacturing a structure formed of the patterned graphene layer by the method according to claim 1.
Serial No. 14/513,324 Page 3 of 10 canceled
A method for patterning a graphene layer, comprising: forming an isolation layer on the graphene layer; forming a photoresist layer on the isolation layer; patterning the photoresist layer; etching the isolation layer according to the patterned photoresist layer to form a patterned isolation layer; etching the graphene layer according to the patterned isolation layer to form a patterned graphene layer; and removing the patterned isolation layer, wherein the method further comprises: forming the graphene layer on a resin base before forming the isolation layer on the graphene layer; and forming a resin film with the patterned graphene layer after removing the patterned isolation layer.
The method according to claim 15, wherein the step forming the graphene layer on the resin base comprises: spin-coating a single-layer or multiple layers of water-soluble graphene material on the resin base to form the graphene layer. Serial No. 14/513,324 Page 6 of
Materials described outside the worked examples.
graphene
C
resin base
Additional fabrication and treatment steps described in the patent.
Related documents with shared materials, methods, properties, or citations.
photoresist
water-soluble graphene material
metal base
copper
Cu
nickel
Ni
copper-nickel alloy
Cu-Ni
inorganic silicon compound material
silicon nitride
Si₃N₄
hydrofluoric acid
HF
metal material (isolation layer)
polymethyl methacrylate (PMMA)
photoresist
water-soluble graphene material
metal base
copper
Cu
nickel
Ni
copper-nickel alloy
Cu-Ni
inorganic silicon compound material
silicon nitride
Si₃N₄
hydrofluoric acid
HF
metal material (isolation layer)
polymethyl methacrylate (PMMA)
photoresist
water-soluble graphene material
metal base
copper
Cu
nickel
Ni
copper-nickel alloy
Cu-Ni
inorganic silicon compound material
silicon nitride
Si₃N₄
hydrofluoric acid
HF
metal material (isolation layer)
polymethyl methacrylate (PMMA)
photoresist
water-soluble graphene material
metal base
copper
Cu
nickel
Ni
copper-nickel alloy
Cu-Ni
inorganic silicon compound material
silicon nitride
Si₃N₄
hydrofluoric acid
HF
metal material (isolation layer)
polymethyl methacrylate (PMMA)