Patent
Atlas literature
Patent
US 11,708,271 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates graphene growth on a substrate via interrupted PECVD according to various embodiments of 10 the disclosure; and
FIG. 2 depicts an exemplary apparatus for PECVD of graphene on a substrate according to certain embodiments of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A coated substrate comprising a graphene film on at least one surface, wherein: the coated substrate is substantially transparent, the graphene film has a resistance of less than about KΩ/sq and a thickness ranging from about 1 nm to about 200 nm, and the graphene film comprises at least one multi-layer horizontal graphene sheet and at least one single-layer vertical graphene sheet; and wherein the single-layer vertical graphene sheet has a height ranging from 1 nm to 200 nm.
The coated substrate of claim 1, wherein the coated substrate has a transmittance of at least about 80% in the visible light spectrum.
The coated substrate of claim 1, wherein the graphene film has a resistance of less than about 3 KΩ/sq.
The coated substrate of claim 1, wherein the multi-layer horizontal graphene sheet comprises from 3 to 20 graphene layers.
The coated substrate of claim 1, wherein the single-layer vertical graphene sheet has a thickness ranging from about 0.3 nm to about 10 nm.
The coated substrate of claim 1, wherein the substrate is chosen from glass, glass-ceramic, and crystalline substrates. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
coated substrate with graphene film
Materials described outside the worked examples.
graphene film
C
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | C |
Fet Sheet Resistance | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Patent
Atlas literature
Patent
US 11,708,271 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates graphene growth on a substrate via interrupted PECVD according to various embodiments of 10 the disclosure; and
FIG. 2 depicts an exemplary apparatus for PECVD of graphene on a substrate according to certain embodiments of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A coated substrate comprising a graphene film on at least one surface, wherein: the coated substrate is substantially transparent, the graphene film has a resistance of less than about KΩ/sq and a thickness ranging from about 1 nm to about 200 nm, and the graphene film comprises at least one multi-layer horizontal graphene sheet and at least one single-layer vertical graphene sheet; and wherein the single-layer vertical graphene sheet has a height ranging from 1 nm to 200 nm.
The coated substrate of claim 1, wherein the coated substrate has a transmittance of at least about 80% in the visible light spectrum.
The coated substrate of claim 1, wherein the graphene film has a resistance of less than about 3 KΩ/sq.
The coated substrate of claim 1, wherein the multi-layer horizontal graphene sheet comprises from 3 to 20 graphene layers.
The coated substrate of claim 1, wherein the single-layer vertical graphene sheet has a thickness ranging from about 0.3 nm to about 10 nm.
The coated substrate of claim 1, wherein the substrate is chosen from glass, glass-ceramic, and crystalline substrates. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
coated substrate with graphene film
Materials described outside the worked examples.
graphene film
C
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | C |
Fet Sheet Resistance | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Patent
Atlas literature
Patent
US 11,708,271 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates graphene growth on a substrate via interrupted PECVD according to various embodiments of 10 the disclosure; and
FIG. 2 depicts an exemplary apparatus for PECVD of graphene on a substrate according to certain embodiments of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A coated substrate comprising a graphene film on at least one surface, wherein: the coated substrate is substantially transparent, the graphene film has a resistance of less than about KΩ/sq and a thickness ranging from about 1 nm to about 200 nm, and the graphene film comprises at least one multi-layer horizontal graphene sheet and at least one single-layer vertical graphene sheet; and wherein the single-layer vertical graphene sheet has a height ranging from 1 nm to 200 nm.
The coated substrate of claim 1, wherein the coated substrate has a transmittance of at least about 80% in the visible light spectrum.
The coated substrate of claim 1, wherein the graphene film has a resistance of less than about 3 KΩ/sq.
The coated substrate of claim 1, wherein the multi-layer horizontal graphene sheet comprises from 3 to 20 graphene layers.
The coated substrate of claim 1, wherein the single-layer vertical graphene sheet has a thickness ranging from about 0.3 nm to about 10 nm.
The coated substrate of claim 1, wherein the substrate is chosen from glass, glass-ceramic, and crystalline substrates. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
coated substrate with graphene film
Materials described outside the worked examples.
graphene film
C
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | C |
Fet Sheet Resistance | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Patent
Atlas literature
Patent
US 11,708,271 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 illustrates graphene growth on a substrate via interrupted PECVD according to various embodiments of 10 the disclosure; and
FIG. 2 depicts an exemplary apparatus for PECVD of graphene on a substrate according to certain embodiments of the disclosure.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A coated substrate comprising a graphene film on at least one surface, wherein: the coated substrate is substantially transparent, the graphene film has a resistance of less than about KΩ/sq and a thickness ranging from about 1 nm to about 200 nm, and the graphene film comprises at least one multi-layer horizontal graphene sheet and at least one single-layer vertical graphene sheet; and wherein the single-layer vertical graphene sheet has a height ranging from 1 nm to 200 nm.
The coated substrate of claim 1, wherein the coated substrate has a transmittance of at least about 80% in the visible light spectrum.
The coated substrate of claim 1, wherein the graphene film has a resistance of less than about 3 KΩ/sq.
The coated substrate of claim 1, wherein the multi-layer horizontal graphene sheet comprises from 3 to 20 graphene layers.
The coated substrate of claim 1, wherein the single-layer vertical graphene sheet has a thickness ranging from about 0.3 nm to about 10 nm.
The coated substrate of claim 1, wherein the substrate is chosen from glass, glass-ceramic, and crystalline substrates. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
coated substrate with graphene film
Materials described outside the worked examples.
graphene film
C
substrate
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Fet Sheet Resistance | — | C |
Fet Sheet Resistance | — |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
graphene oxide layer
Uv Vis Transmittance At Wavelength | — | C |
Temperature | 10–900 °C | — |
Temperature | 60–900 °C | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Temperature | 500–1100 °C | — |
Temperature | 600–1050 °C | — |
Temperature | 700–1000 °C | — |
Temperature | 800–900 °C | — |
— | 50–200 W | — |
— | 75–175 W | — |
— | 100–150 W | — |
Flow Rate | 1–20 sccm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Thickness | 0.3–10 nm | — |
Thickness | 0.3–0.5 nm | — |
Thickness | 0.35–0.4 nm | — |
Duration | 1–15 minutes | — |
Duration | 2–12 minutes | — |
Duration | 3–10 minutes | — |
Duration | 4–8 minutes | — |
Duration | 5–6 minutes | — |
Thickness | 1–10 nm | — |
Thickness | 2–9 nm | — |
Thickness | 3–8 nm | — |
Thickness | 4–7 nm | — |
Thickness | 5–6 nm | — |
Thickness | 0.3–30 nm | — |
Thickness | 0.35–25 nm | — |
Thickness | 0.4–20 nm | — |
Thickness | 0.5–15 nm | — |
Thickness | 0.7–12 nm | — |
Duration | 1–30 minutes | — |
Duration | 2–25 minutes | — |
Duration | 3–20 minutes | — |
Duration | 4–15 minutes | — |
Duration | 5–10 minutes | — |
Thickness | 0.35–9 nm | — |
Thickness | 0.4–8 nm | — |
Thickness | 0.7–5 nm | — |
Thickness | 0.8–4 nm | — |
Thickness | 0.9–3 nm | — |
Thickness | 1–2 nm | — |
Thickness | 1–200 nm | — |
Thickness | 2–175 nm | — |
Thickness | 3–150 nm | — |
Thickness | 4–125 nm | — |
Thickness | 5–100 nm | — |
Thickness | 6–75 nm | — |
Thickness | 7–50 nm | — |
Thickness | 8–25 nm | — |
Thickness | 9–10 nm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 25–150 °C | — |
Temperature | 50–125 °C | — |
Temperature | 65–100 °C | — |
Temperature | 75–95 °C | — |
Flow Rate | 0–40 sccm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Thickness | 0.5–7 nm | — |
Thickness | 0.6–6 nm | — |
Flow Rate | 10–20 sccm | — |
Thickness | 400–700 nm | — |
Thickness | 100–400 nm | — |
Temperature | ≤ 1100 °C | — |
Duration | 5–30 minutes | — |
Thickness | ≤ 3 mm | — |
Cited non-patent literature · 6
graphene oxide layer
Uv Vis Transmittance At Wavelength | — | C |
Temperature | 10–900 °C | — |
Temperature | 60–900 °C | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Temperature | 500–1100 °C | — |
Temperature | 600–1050 °C | — |
Temperature | 700–1000 °C | — |
Temperature | 800–900 °C | — |
— | 50–200 W | — |
— | 75–175 W | — |
— | 100–150 W | — |
Flow Rate | 1–20 sccm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Thickness | 0.3–10 nm | — |
Thickness | 0.3–0.5 nm | — |
Thickness | 0.35–0.4 nm | — |
Duration | 1–15 minutes | — |
Duration | 2–12 minutes | — |
Duration | 3–10 minutes | — |
Duration | 4–8 minutes | — |
Duration | 5–6 minutes | — |
Thickness | 1–10 nm | — |
Thickness | 2–9 nm | — |
Thickness | 3–8 nm | — |
Thickness | 4–7 nm | — |
Thickness | 5–6 nm | — |
Thickness | 0.3–30 nm | — |
Thickness | 0.35–25 nm | — |
Thickness | 0.4–20 nm | — |
Thickness | 0.5–15 nm | — |
Thickness | 0.7–12 nm | — |
Duration | 1–30 minutes | — |
Duration | 2–25 minutes | — |
Duration | 3–20 minutes | — |
Duration | 4–15 minutes | — |
Duration | 5–10 minutes | — |
Thickness | 0.35–9 nm | — |
Thickness | 0.4–8 nm | — |
Thickness | 0.7–5 nm | — |
Thickness | 0.8–4 nm | — |
Thickness | 0.9–3 nm | — |
Thickness | 1–2 nm | — |
Thickness | 1–200 nm | — |
Thickness | 2–175 nm | — |
Thickness | 3–150 nm | — |
Thickness | 4–125 nm | — |
Thickness | 5–100 nm | — |
Thickness | 6–75 nm | — |
Thickness | 7–50 nm | — |
Thickness | 8–25 nm | — |
Thickness | 9–10 nm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 25–150 °C | — |
Temperature | 50–125 °C | — |
Temperature | 65–100 °C | — |
Temperature | 75–95 °C | — |
Flow Rate | 0–40 sccm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Thickness | 0.5–7 nm | — |
Thickness | 0.6–6 nm | — |
Flow Rate | 10–20 sccm | — |
Thickness | 400–700 nm | — |
Thickness | 100–400 nm | — |
Temperature | ≤ 1100 °C | — |
Duration | 5–30 minutes | — |
Thickness | ≤ 3 mm | — |
Cited non-patent literature · 6
graphene oxide layer
Uv Vis Transmittance At Wavelength | — | C |
Temperature | 10–900 °C | — |
Temperature | 60–900 °C | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Temperature | 500–1100 °C | — |
Temperature | 600–1050 °C | — |
Temperature | 700–1000 °C | — |
Temperature | 800–900 °C | — |
— | 50–200 W | — |
— | 75–175 W | — |
— | 100–150 W | — |
Flow Rate | 1–20 sccm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Thickness | 0.3–10 nm | — |
Thickness | 0.3–0.5 nm | — |
Thickness | 0.35–0.4 nm | — |
Duration | 1–15 minutes | — |
Duration | 2–12 minutes | — |
Duration | 3–10 minutes | — |
Duration | 4–8 minutes | — |
Duration | 5–6 minutes | — |
Thickness | 1–10 nm | — |
Thickness | 2–9 nm | — |
Thickness | 3–8 nm | — |
Thickness | 4–7 nm | — |
Thickness | 5–6 nm | — |
Thickness | 0.3–30 nm | — |
Thickness | 0.35–25 nm | — |
Thickness | 0.4–20 nm | — |
Thickness | 0.5–15 nm | — |
Thickness | 0.7–12 nm | — |
Duration | 1–30 minutes | — |
Duration | 2–25 minutes | — |
Duration | 3–20 minutes | — |
Duration | 4–15 minutes | — |
Duration | 5–10 minutes | — |
Thickness | 0.35–9 nm | — |
Thickness | 0.4–8 nm | — |
Thickness | 0.7–5 nm | — |
Thickness | 0.8–4 nm | — |
Thickness | 0.9–3 nm | — |
Thickness | 1–2 nm | — |
Thickness | 1–200 nm | — |
Thickness | 2–175 nm | — |
Thickness | 3–150 nm | — |
Thickness | 4–125 nm | — |
Thickness | 5–100 nm | — |
Thickness | 6–75 nm | — |
Thickness | 7–50 nm | — |
Thickness | 8–25 nm | — |
Thickness | 9–10 nm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 25–150 °C | — |
Temperature | 50–125 °C | — |
Temperature | 65–100 °C | — |
Temperature | 75–95 °C | — |
Flow Rate | 0–40 sccm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Thickness | 0.5–7 nm | — |
Thickness | 0.6–6 nm | — |
Flow Rate | 10–20 sccm | — |
Thickness | 400–700 nm | — |
Thickness | 100–400 nm | — |
Temperature | ≤ 1100 °C | — |
Duration | 5–30 minutes | — |
Thickness | ≤ 3 mm | — |
Cited non-patent literature · 6
graphene oxide layer
Uv Vis Transmittance At Wavelength | — | C |
Temperature | 10–900 °C | — |
Temperature | 60–900 °C | — |
Flow Rate | 1–35 sccm | — |
Flow Rate | 5–30 sccm | — |
Flow Rate | 10–25 sccm | — |
Flow Rate | 15–20 sccm | — |
Temperature | 500–1100 °C | — |
Temperature | 600–1050 °C | — |
Temperature | 700–1000 °C | — |
Temperature | 800–900 °C | — |
— | 50–200 W | — |
— | 75–175 W | — |
— | 100–150 W | — |
Flow Rate | 1–20 sccm | — |
Flow Rate | 2–18 sccm | — |
Flow Rate | 3–15 sccm | — |
Flow Rate | 4–12 sccm | — |
Flow Rate | 5–10 sccm | — |
Flow Rate | 6–8 sccm | — |
Thickness | 0.3–10 nm | — |
Thickness | 0.3–0.5 nm | — |
Thickness | 0.35–0.4 nm | — |
Duration | 1–15 minutes | — |
Duration | 2–12 minutes | — |
Duration | 3–10 minutes | — |
Duration | 4–8 minutes | — |
Duration | 5–6 minutes | — |
Thickness | 1–10 nm | — |
Thickness | 2–9 nm | — |
Thickness | 3–8 nm | — |
Thickness | 4–7 nm | — |
Thickness | 5–6 nm | — |
Thickness | 0.3–30 nm | — |
Thickness | 0.35–25 nm | — |
Thickness | 0.4–20 nm | — |
Thickness | 0.5–15 nm | — |
Thickness | 0.7–12 nm | — |
Duration | 1–30 minutes | — |
Duration | 2–25 minutes | — |
Duration | 3–20 minutes | — |
Duration | 4–15 minutes | — |
Duration | 5–10 minutes | — |
Thickness | 0.35–9 nm | — |
Thickness | 0.4–8 nm | — |
Thickness | 0.7–5 nm | — |
Thickness | 0.8–4 nm | — |
Thickness | 0.9–3 nm | — |
Thickness | 1–2 nm | — |
Thickness | 1–200 nm | — |
Thickness | 2–175 nm | — |
Thickness | 3–150 nm | — |
Thickness | 4–125 nm | — |
Thickness | 5–100 nm | — |
Thickness | 6–75 nm | — |
Thickness | 7–50 nm | — |
Thickness | 8–25 nm | — |
Thickness | 9–10 nm | — |
Duration | 1–10 minutes | — |
Duration | 2–8 minutes | — |
Duration | 3–6 minutes | — |
Duration | 4–5 minutes | — |
Temperature | 25–150 °C | — |
Temperature | 50–125 °C | — |
Temperature | 65–100 °C | — |
Temperature | 75–95 °C | — |
Flow Rate | 0–40 sccm | — |
Thickness | 0.1–2.5 mm | — |
Thickness | 0.3–2 mm | — |
Thickness | 0.7–1.5 mm | — |
Thickness | 1–1.2 mm | — |
Thickness | 0.5–7 nm | — |
Thickness | 0.6–6 nm | — |
Flow Rate | 10–20 sccm | — |
Thickness | 400–700 nm | — |
Thickness | 100–400 nm | — |
Temperature | ≤ 1100 °C | — |
Duration | 5–30 minutes | — |
Thickness | ≤ 3 mm | — |
Cited non-patent literature · 6
