Patent
US 10,968,104molybdenum disulfide
MoS₂
tungsten disulfide
WS₂
graphite
silicon
Si
silicon carbide
SiC
inorganic metallic substrate
| 5–50000 nm |
| — |
Pressure | 0.1–1 kPa | — |
Pressure | 1.1–500 kPa | — |
Thickness | 5–100 cm | — |
molybdenum disulfide
MoS₂
tungsten disulfide
WS₂
graphite
silicon
Si
silicon carbide
SiC
inorganic metallic substrate
| 5–50000 nm |
| — |
Pressure | 0.1–1 kPa | — |
Pressure | 1.1–500 kPa | — |
Thickness | 5–100 cm | — |
molybdenum disulfide
MoS₂
tungsten disulfide
WS₂
graphite
silicon
Si
silicon carbide
SiC
inorganic metallic substrate
| 5–50000 nm |
| — |
Pressure | 0.1–1 kPa | — |
Pressure | 1.1–500 kPa | — |
Thickness | 5–100 cm | — |
molybdenum disulfide
MoS₂
tungsten disulfide
WS₂
graphite
silicon
Si
silicon carbide
SiC
inorganic metallic substrate
| 5–50000 nm |
| — |
Pressure | 0.1–1 kPa | — |
Pressure | 1.1–500 kPa | — |
Thickness | 5–100 cm | — |