Patent
US 11,577,960METHOD OF FORMING A GRAPHENE DEVICE
Dipankar KALITA
US
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Patent
Atlas literature
Patent
US 11,577,960Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. Canceled
Canceled
A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; wherein the surface on which the conductive graphene film is formed comprises a mold having a shape of a three-dimensional form; and wherein: the mold is formed of a first material and at least one zone of a second material; during the formation of the conductive graphene film, graphene selectively forms on the at least one zone of the second material and not on the first material; and the graphene support layer of parylene is deposited over the conductive graphene film and at least a portion of the first material. Previously presented
The method of claim 8, further comprising, after removing the substrate from the conductive graphene film, performing a further gas phase deposition of parylene to encapsulate the conductive graphene film. Previously presented
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited to form a conductive track having a meandering form in a detection zone. Currently amended
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monola y ers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support la y er of par y lene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited in the form of a first plate of graphene formed in a detection zone and connected to a first conductive track, and wherein the method further comprises: forming a further conductive graphene film covered by a further deposition of the parylene, wherein the further conductive graphene film is deposited in the form of a second plate of graphene; and assembling the first and second conductive graphene films such that the first and second graphene plates form a capacitive interface in the detection zone separated by a layer of the parylene. Currently amended
12-18. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
3D conductive graphene device with selective patterning
graphene resistive sensor with meandering conductive track
graphene capacitive sensor
Materials described outside the worked examples.
conductive graphene film
C
parylene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
parylene elongation before breaking | 200 % | parylene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,577,960Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. Canceled
Canceled
A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; wherein the surface on which the conductive graphene film is formed comprises a mold having a shape of a three-dimensional form; and wherein: the mold is formed of a first material and at least one zone of a second material; during the formation of the conductive graphene film, graphene selectively forms on the at least one zone of the second material and not on the first material; and the graphene support layer of parylene is deposited over the conductive graphene film and at least a portion of the first material. Previously presented
The method of claim 8, further comprising, after removing the substrate from the conductive graphene film, performing a further gas phase deposition of parylene to encapsulate the conductive graphene film. Previously presented
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited to form a conductive track having a meandering form in a detection zone. Currently amended
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monola y ers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support la y er of par y lene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited in the form of a first plate of graphene formed in a detection zone and connected to a first conductive track, and wherein the method further comprises: forming a further conductive graphene film covered by a further deposition of the parylene, wherein the further conductive graphene film is deposited in the form of a second plate of graphene; and assembling the first and second conductive graphene films such that the first and second graphene plates form a capacitive interface in the detection zone separated by a layer of the parylene. Currently amended
12-18. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
3D conductive graphene device with selective patterning
graphene resistive sensor with meandering conductive track
graphene capacitive sensor
Materials described outside the worked examples.
conductive graphene film
C
parylene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
parylene elongation before breaking | 200 % | parylene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,577,960Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. Canceled
Canceled
A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; wherein the surface on which the conductive graphene film is formed comprises a mold having a shape of a three-dimensional form; and wherein: the mold is formed of a first material and at least one zone of a second material; during the formation of the conductive graphene film, graphene selectively forms on the at least one zone of the second material and not on the first material; and the graphene support layer of parylene is deposited over the conductive graphene film and at least a portion of the first material. Previously presented
The method of claim 8, further comprising, after removing the substrate from the conductive graphene film, performing a further gas phase deposition of parylene to encapsulate the conductive graphene film. Previously presented
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited to form a conductive track having a meandering form in a detection zone. Currently amended
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monola y ers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support la y er of par y lene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited in the form of a first plate of graphene formed in a detection zone and connected to a first conductive track, and wherein the method further comprises: forming a further conductive graphene film covered by a further deposition of the parylene, wherein the further conductive graphene film is deposited in the form of a second plate of graphene; and assembling the first and second conductive graphene films such that the first and second graphene plates form a capacitive interface in the detection zone separated by a layer of the parylene. Currently amended
12-18. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
3D conductive graphene device with selective patterning
graphene resistive sensor with meandering conductive track
graphene capacitive sensor
Materials described outside the worked examples.
conductive graphene film
C
parylene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
parylene elongation before breaking | 200 % | parylene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,577,960Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-7. Canceled
Canceled
A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; wherein the surface on which the conductive graphene film is formed comprises a mold having a shape of a three-dimensional form; and wherein: the mold is formed of a first material and at least one zone of a second material; during the formation of the conductive graphene film, graphene selectively forms on the at least one zone of the second material and not on the first material; and the graphene support layer of parylene is deposited over the conductive graphene film and at least a portion of the first material. Previously presented
The method of claim 8, further comprising, after removing the substrate from the conductive graphene film, performing a further gas phase deposition of parylene to encapsulate the conductive graphene film. Previously presented
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monolayers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support layer of parylene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited to form a conductive track having a meandering form in a detection zone. Currently amended
, A method of forming a conductive graphene device, the method comprising: forming a conductive graphene film over a substrate, the conductive graphene film consisting essentially of one to eight monola y ers of carbon atoms, the conductive graphene film having a first surface and a second surface, the first surface covering the substrate; gas phase depositing a graphene support layer of parylene over the second surface of the conductive graphene film, the graphene support layer of parylene supporting the conductive graphene film during the operation of the conductive graphene device; removing the substrate from the conductive graphene film, thereby exposing the first surface of the conductive graphene film; wherein the graphene support la y er of par y lene is deposited with a thickness of between 5 nm and 5 mm; and wherein the conductive graphene film is deposited in the form of a first plate of graphene formed in a detection zone and connected to a first conductive track, and wherein the method further comprises: forming a further conductive graphene film covered by a further deposition of the parylene, wherein the further conductive graphene film is deposited in the form of a second plate of graphene; and assembling the first and second conductive graphene films such that the first and second graphene plates form a capacitive interface in the detection zone separated by a layer of the parylene. Currently amended
12-18. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
3D conductive graphene device with selective patterning
graphene resistive sensor with meandering conductive track
graphene capacitive sensor
Materials described outside the worked examples.
conductive graphene film
C
parylene
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
parylene elongation before breaking | 200 % | parylene |
Thickness |
Related documents with shared materials, methods, properties, or citations.
graphene film bi-layer (graphene + parylene support)
parylene N
copper foil substrate
Cu
AuCl₃ dopant
AuCl₃
HNO₃ dopant
HNO₃
FeCl₃ intercalant
FeCl₃
| 5–40 nm |
| — |
Thickness | 5–5000000 nm | — |
graphene film bi-layer (graphene + parylene support)
parylene N
copper foil substrate
Cu
AuCl₃ dopant
AuCl₃
HNO₃ dopant
HNO₃
FeCl₃ intercalant
FeCl₃
| 5–40 nm |
| — |
Thickness | 5–5000000 nm | — |
graphene film bi-layer (graphene + parylene support)
parylene N
copper foil substrate
Cu
AuCl₃ dopant
AuCl₃
HNO₃ dopant
HNO₃
FeCl₃ intercalant
FeCl₃
| 5–40 nm |
| — |
Thickness | 5–5000000 nm | — |
graphene film bi-layer (graphene + parylene support)
parylene N
copper foil substrate
Cu
AuCl₃ dopant
AuCl₃
HNO₃ dopant
HNO₃
FeCl₃ intercalant
FeCl₃
| 5–40 nm |
| — |
Thickness | 5–5000000 nm | — |