Patent
Method of manufacturing graphene by vapor phase epitaxial deposition on a SiC substrate
US
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Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/154,920 Docket No.: 110686 AMENDMENTS TO THE CLAIMS 1.: A method of manufacturing graphene ee mpisig- in an epitaxial reactor, com p risin g p rovidin g a substrate of SiC in the e p itaxial reactor, introducing gaseous carbon precursor into the e p itaxial reactor as an external carbon source, maintaining the SiC substrate at a temperature of above 1100 0 C and dep ositin g carbon on the SiC substrate by va p or phase e p itaxial deposition, inhibitin g or p reventin g sublimation of silicon from the SiC substrate by a flow of an inert g as or a g as other than an inert g as throu gh the ep itaxial reactor, wherein during said va p or phase e p itaxial deposition the product of the inert g as or the g as other than the inert g as in the reactor and the inert g as or the g as other than the inert g as flow rate through the reactor is adjusted such that a sta gnant lay er of the inert g as or the g as other than the inert g as is created over the surface of said substrate, p reventin g silicon sublimation
(Previously pr es ent ed): The method according to claim 1, wherein the flow of the inert gas is at a rate of from 6/min to 70 t/min.
.: The method according to claim 1, wherein the flow of the inert gas is at a rate lower than 6 1/min.
: The method according to claim 1, wherein the flow of the inert gas is initially at a rate of from 6 1/min to 70 1min, and subsequently the flow of the inert gas is lowered to a rate lower than 6 1/min.
: The method according to claim 1, wherein said vapor phase epitaxial deposition is preceded by etching said substrate at a temperature of from 1400 ° C to 2000 °C.
: The method according to claim 1, wherein said substrate is a substrate of SiC, having one of the following polytypes: 4H-SiC, 6H-SiC or 3C-SiC.
: The method according to claim 1, wherein said inert gas is a noble gas.
: The method according to claim 1, wherein said inert gas is argon.
: The method according to claim 1, wherein said gaseous carbon precursor comprises methane, propane, acetylene or benzene as said external carbon source.
: The method according to claim 1, wherein said gaseous carbon precursor comprises propane as said external carbon source. 4
. canceled
. canceled
Materials described outside the worked examples.
graphene
C
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/154,920 Docket No.: 110686 AMENDMENTS TO THE CLAIMS 1.: A method of manufacturing graphene ee mpisig- in an epitaxial reactor, com p risin g p rovidin g a substrate of SiC in the e p itaxial reactor, introducing gaseous carbon precursor into the e p itaxial reactor as an external carbon source, maintaining the SiC substrate at a temperature of above 1100 0 C and dep ositin g carbon on the SiC substrate by va p or phase e p itaxial deposition, inhibitin g or p reventin g sublimation of silicon from the SiC substrate by a flow of an inert g as or a g as other than an inert g as throu gh the ep itaxial reactor, wherein during said va p or phase e p itaxial deposition the product of the inert g as or the g as other than the inert g as in the reactor and the inert g as or the g as other than the inert g as flow rate through the reactor is adjusted such that a sta gnant lay er of the inert g as or the g as other than the inert g as is created over the surface of said substrate, p reventin g silicon sublimation
(Previously pr es ent ed): The method according to claim 1, wherein the flow of the inert gas is at a rate of from 6/min to 70 t/min.
.: The method according to claim 1, wherein the flow of the inert gas is at a rate lower than 6 1/min.
: The method according to claim 1, wherein the flow of the inert gas is initially at a rate of from 6 1/min to 70 1min, and subsequently the flow of the inert gas is lowered to a rate lower than 6 1/min.
: The method according to claim 1, wherein said vapor phase epitaxial deposition is preceded by etching said substrate at a temperature of from 1400 ° C to 2000 °C.
: The method according to claim 1, wherein said substrate is a substrate of SiC, having one of the following polytypes: 4H-SiC, 6H-SiC or 3C-SiC.
: The method according to claim 1, wherein said inert gas is a noble gas.
: The method according to claim 1, wherein said inert gas is argon.
: The method according to claim 1, wherein said gaseous carbon precursor comprises methane, propane, acetylene or benzene as said external carbon source.
: The method according to claim 1, wherein said gaseous carbon precursor comprises propane as said external carbon source. 4
. canceled
. canceled
Materials described outside the worked examples.
graphene
C
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/154,920 Docket No.: 110686 AMENDMENTS TO THE CLAIMS 1.: A method of manufacturing graphene ee mpisig- in an epitaxial reactor, com p risin g p rovidin g a substrate of SiC in the e p itaxial reactor, introducing gaseous carbon precursor into the e p itaxial reactor as an external carbon source, maintaining the SiC substrate at a temperature of above 1100 0 C and dep ositin g carbon on the SiC substrate by va p or phase e p itaxial deposition, inhibitin g or p reventin g sublimation of silicon from the SiC substrate by a flow of an inert g as or a g as other than an inert g as throu gh the ep itaxial reactor, wherein during said va p or phase e p itaxial deposition the product of the inert g as or the g as other than the inert g as in the reactor and the inert g as or the g as other than the inert g as flow rate through the reactor is adjusted such that a sta gnant lay er of the inert g as or the g as other than the inert g as is created over the surface of said substrate, p reventin g silicon sublimation
(Previously pr es ent ed): The method according to claim 1, wherein the flow of the inert gas is at a rate of from 6/min to 70 t/min.
.: The method according to claim 1, wherein the flow of the inert gas is at a rate lower than 6 1/min.
: The method according to claim 1, wherein the flow of the inert gas is initially at a rate of from 6 1/min to 70 1min, and subsequently the flow of the inert gas is lowered to a rate lower than 6 1/min.
: The method according to claim 1, wherein said vapor phase epitaxial deposition is preceded by etching said substrate at a temperature of from 1400 ° C to 2000 °C.
: The method according to claim 1, wherein said substrate is a substrate of SiC, having one of the following polytypes: 4H-SiC, 6H-SiC or 3C-SiC.
: The method according to claim 1, wherein said inert gas is a noble gas.
: The method according to claim 1, wherein said inert gas is argon.
: The method according to claim 1, wherein said gaseous carbon precursor comprises methane, propane, acetylene or benzene as said external carbon source.
: The method according to claim 1, wherein said gaseous carbon precursor comprises propane as said external carbon source. 4
. canceled
. canceled
Materials described outside the worked examples.
graphene
C
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
Patent
Atlas literature
Patent
Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Application No.: 13/154,920 Docket No.: 110686 AMENDMENTS TO THE CLAIMS 1.: A method of manufacturing graphene ee mpisig- in an epitaxial reactor, com p risin g p rovidin g a substrate of SiC in the e p itaxial reactor, introducing gaseous carbon precursor into the e p itaxial reactor as an external carbon source, maintaining the SiC substrate at a temperature of above 1100 0 C and dep ositin g carbon on the SiC substrate by va p or phase e p itaxial deposition, inhibitin g or p reventin g sublimation of silicon from the SiC substrate by a flow of an inert g as or a g as other than an inert g as throu gh the ep itaxial reactor, wherein during said va p or phase e p itaxial deposition the product of the inert g as or the g as other than the inert g as in the reactor and the inert g as or the g as other than the inert g as flow rate through the reactor is adjusted such that a sta gnant lay er of the inert g as or the g as other than the inert g as is created over the surface of said substrate, p reventin g silicon sublimation
(Previously pr es ent ed): The method according to claim 1, wherein the flow of the inert gas is at a rate of from 6/min to 70 t/min.
.: The method according to claim 1, wherein the flow of the inert gas is at a rate lower than 6 1/min.
: The method according to claim 1, wherein the flow of the inert gas is initially at a rate of from 6 1/min to 70 1min, and subsequently the flow of the inert gas is lowered to a rate lower than 6 1/min.
: The method according to claim 1, wherein said vapor phase epitaxial deposition is preceded by etching said substrate at a temperature of from 1400 ° C to 2000 °C.
: The method according to claim 1, wherein said substrate is a substrate of SiC, having one of the following polytypes: 4H-SiC, 6H-SiC or 3C-SiC.
: The method according to claim 1, wherein said inert gas is a noble gas.
: The method according to claim 1, wherein said inert gas is argon.
: The method according to claim 1, wherein said gaseous carbon precursor comprises methane, propane, acetylene or benzene as said external carbon source.
: The method according to claim 1, wherein said gaseous carbon precursor comprises propane as said external carbon source. 4
. canceled
. canceled
Materials described outside the worked examples.
graphene
C
SiC substrate
SiC
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Temperature | 1400–2000 °C | — |
inert gas
hydrogen
H₂
propane
C₃H₈
silane
SiH₄
argon
Ar
methane
CH₄
acetylene
C₂H₂
benzene
C₆H₆
inert gas
hydrogen
H₂
propane
C₃H₈
silane
SiH₄
argon
Ar
methane
CH₄
acetylene
C₂H₂
benzene
C₆H₆
inert gas
hydrogen
H₂
propane
C₃H₈
silane
SiH₄
argon
Ar
methane
CH₄
acetylene
C₂H₂
benzene
C₆H₆
inert gas
hydrogen
H₂
propane
C₃H₈
silane
SiH₄
argon
Ar
methane
CH₄
acetylene
C₂H₂
benzene
C₆H₆