A method of producing a layer comprising graphene on a substrate comprising silicon, the method comprising the following steps:-a step of depositing a layer comprising amorphous carbon on [[a]] _sai d substrate, the amorhouscarbon com prsin-gp ore t h an 50% of C arbon in th e sp- h ybridization state; and-a step of annealing said layer under photonic or electronic irradiation, whereby said layer comprising graphene on said substrate is obtained.

canceled

The method according to C laim 1 Ckie-2, in which the substrate comprising silicon is a substrate of crystalline silicon, a substrate of polysilicon, a substrate of amorphous silicon, a substrate of epitaxial silicon, a substrate of silicon dioxide, a substrate of silicon carbide, a substrate of silicon oxycarbide, a substrate of silicon nitride, a substrate of silicon carbonitride (SiCN), a substrate comprising silicon, oxygen, carbon and fluorine (designated SiOCF), or a substrate of silicon boronitride.

canceled

A method of producing a layer comprising graphene on a substrate comprising silicon, the method comprising the following steps:-a step of depositing a layer comprising amorphous carbon on [[a]] _sai d substrate, the amorhouscarbon com prsin-gp ore t h an 50% of C arbon in th e sp- h ybridization state; and-a step of annealing said layer under photonic or electronic irradiation, whereby said layer comprising graphene on said substrate is obtained.

canceled

The method according to C laim 1 Ckie-2, in which the substrate comprising silicon is a substrate of crystalline silicon, a substrate of polysilicon, a substrate of amorphous silicon, a substrate of epitaxial silicon, a substrate of silicon dioxide, a substrate of silicon carbide, a substrate of silicon oxycarbide, a substrate of silicon nitride, a substrate of silicon carbonitride (SiCN), a substrate comprising silicon, oxygen, carbon and fluorine (designated SiOCF), or a substrate of silicon boronitride.

canceled

A method of producing a layer comprising graphene on a substrate comprising silicon, the method comprising the following steps:-a step of depositing a layer comprising amorphous carbon on [[a]] _sai d substrate, the amorhouscarbon com prsin-gp ore t h an 50% of C arbon in th e sp- h ybridization state; and-a step of annealing said layer under photonic or electronic irradiation, whereby said layer comprising graphene on said substrate is obtained.

canceled

The method according to C laim 1 Ckie-2, in which the substrate comprising silicon is a substrate of crystalline silicon, a substrate of polysilicon, a substrate of amorphous silicon, a substrate of epitaxial silicon, a substrate of silicon dioxide, a substrate of silicon carbide, a substrate of silicon oxycarbide, a substrate of silicon nitride, a substrate of silicon carbonitride (SiCN), a substrate comprising silicon, oxygen, carbon and fluorine (designated SiOCF), or a substrate of silicon boronitride.

canceled

A method of producing a layer comprising graphene on a substrate comprising silicon, the method comprising the following steps:-a step of depositing a layer comprising amorphous carbon on [[a]] _sai d substrate, the amorhouscarbon com prsin-gp ore t h an 50% of C arbon in th e sp- h ybridization state; and-a step of annealing said layer under photonic or electronic irradiation, whereby said layer comprising graphene on said substrate is obtained.

canceled

The method according to C laim 1 Ckie-2, in which the substrate comprising silicon is a substrate of crystalline silicon, a substrate of polysilicon, a substrate of amorphous silicon, a substrate of epitaxial silicon, a substrate of silicon dioxide, a substrate of silicon carbide, a substrate of silicon oxycarbide, a substrate of silicon nitride, a substrate of silicon carbonitride (SiCN), a substrate comprising silicon, oxygen, carbon and fluorine (designated SiOCF), or a substrate of silicon boronitride.

canceled