Patent
US 9,216,493METHODS OF IMPROVING SINTERING OF PCD USING GRAPHENE
Abds-Sami Malik
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,216,493Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making diamond comprising: sintering [[a]] nano-scale graphene single or multiple layer material having an aspect ratio of 500 to 2000, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure of up to about 75 kBar.
(Orginal) The method of claim 1, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 1 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 1, wherein the sintering minutes.
The method of claim 1, wherein the high process provide a driving force of greater than diamond.
canceled
canceled
A method of making diamond comprising: mixing [[a]] nano-scale single or multiple layer material graphene having an aspect ratio of 500 to 2000 with diamond seed to form a powder mixture; and Appl. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 3 sintering the powder mixture, in absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.
The method of claim 8, wherein the diamond seed is equal to or greater than about 0.01 0% by weight of the powder mixture.
The mixture of claim 8, wherein the diamond seed is equal to or greater than about 0.1% by weight of the powder mixture.
The method of claim 8, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 8 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 8, wherein the sintering minutes.
The method of claim 8, wherein the high process provide a driving force of greater than diamond. superabrasive particles comprise diamond. is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to
canceled
(Withdrawn-currently amended) A method of making a polycrystalline diamond compact comprising: Mixing nano-scale graphene having an aspect ratio of 500 to 2000 in diamond powder to form a powder mixture with less than about 90 % graphene by volume; and sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar. App l. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 4
The method of claim 16, wherein the powder mixture includes about 1% to about 10% graphene by volume. withdrawn
The method of claim 16, wherein the sintering is performed for a time period of at least about 5 minutes. withdrawn
The method of claim 16 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C. withdrawn
canceled
A cutting element, comprising: a polycrystalline superabrasive particles having substantially free of a catalytic material, wherein the polycrystalline superabrasive particles are converted from a nano-scale material graphine having an aspect ratio of 500 to 2000 with superabrasive particles as seeds at high pressure and high temperature, wherein the sintering was performed at a pressure up to about 75 kBar. withdrawn
The cutting element of claim 23, wherein the withdrawn
25-27. canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 55 kBar and 1000°C for 5 minutes in the absence of a transition metal catalyst. XRD confirmed crystalline diamond formation; the diamond XRD peak at ~44° 2-theta was sharper and stronger than for Sample 2.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 45 kBar and 700°C for 5 minutes in the absence of a transition metal catalyst. XRD detected crystalline diamond, but with a weaker signal than Sample 1.
2 materials1 process step
Graphite with diamond seed was pressed under the same conditions as Sample 1 (55 kBar, 1000°C). No detectable diamond was formed by XRD.
1 material1 process step
Graphite without diamond seed was pressed at the same HPHT conditions. No diamond was detected by XRD.
2 materials1 process step
Repeat of Sample 1 with graphene type A and diamond seed at 55 kBar, 1000°C. Diamond formation confirmed by XRD, consistent with Sample 1.
2 materials1 process step
Repeat of Sample 2 with longer soak time of 10 minutes. Diamond was again detected by XRD but showed a weak signal similar to Sample 2.
1 material1 process step
Graphene type A without diamond seed pressed at 55 kBar and 1000°C. Diamond was detected by XRD but only as a weak signal.
1 material1 process step
Graphene type B was tested at conditions including with and without seed at 45 kBar/700°C and 55 kBar/1000°C. None of the experiments yielded detectable diamond by XRD.
1 material1 process step
Graphene type C was tested under the same conditions as Samples 8–11. None of the experiments yielded detectable diamond by XRD.
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline diamond compact
cutting element with polycrystalline superabrasive particles
Materials described outside the worked examples.
superabrasive particles
hexagonal boron nitride (white graphene)
BN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene XRD peak 1 (graphite-like) | 26 deg | C |
graphene XRD peak 2 (graphite-like) | 45 deg |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,216,493Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making diamond comprising: sintering [[a]] nano-scale graphene single or multiple layer material having an aspect ratio of 500 to 2000, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure of up to about 75 kBar.
(Orginal) The method of claim 1, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 1 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 1, wherein the sintering minutes.
The method of claim 1, wherein the high process provide a driving force of greater than diamond.
canceled
canceled
A method of making diamond comprising: mixing [[a]] nano-scale single or multiple layer material graphene having an aspect ratio of 500 to 2000 with diamond seed to form a powder mixture; and Appl. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 3 sintering the powder mixture, in absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.
The method of claim 8, wherein the diamond seed is equal to or greater than about 0.01 0% by weight of the powder mixture.
The mixture of claim 8, wherein the diamond seed is equal to or greater than about 0.1% by weight of the powder mixture.
The method of claim 8, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 8 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 8, wherein the sintering minutes.
The method of claim 8, wherein the high process provide a driving force of greater than diamond. superabrasive particles comprise diamond. is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to
canceled
(Withdrawn-currently amended) A method of making a polycrystalline diamond compact comprising: Mixing nano-scale graphene having an aspect ratio of 500 to 2000 in diamond powder to form a powder mixture with less than about 90 % graphene by volume; and sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar. App l. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 4
The method of claim 16, wherein the powder mixture includes about 1% to about 10% graphene by volume. withdrawn
The method of claim 16, wherein the sintering is performed for a time period of at least about 5 minutes. withdrawn
The method of claim 16 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C. withdrawn
canceled
A cutting element, comprising: a polycrystalline superabrasive particles having substantially free of a catalytic material, wherein the polycrystalline superabrasive particles are converted from a nano-scale material graphine having an aspect ratio of 500 to 2000 with superabrasive particles as seeds at high pressure and high temperature, wherein the sintering was performed at a pressure up to about 75 kBar. withdrawn
The cutting element of claim 23, wherein the withdrawn
25-27. canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 55 kBar and 1000°C for 5 minutes in the absence of a transition metal catalyst. XRD confirmed crystalline diamond formation; the diamond XRD peak at ~44° 2-theta was sharper and stronger than for Sample 2.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 45 kBar and 700°C for 5 minutes in the absence of a transition metal catalyst. XRD detected crystalline diamond, but with a weaker signal than Sample 1.
2 materials1 process step
Graphite with diamond seed was pressed under the same conditions as Sample 1 (55 kBar, 1000°C). No detectable diamond was formed by XRD.
1 material1 process step
Graphite without diamond seed was pressed at the same HPHT conditions. No diamond was detected by XRD.
2 materials1 process step
Repeat of Sample 1 with graphene type A and diamond seed at 55 kBar, 1000°C. Diamond formation confirmed by XRD, consistent with Sample 1.
2 materials1 process step
Repeat of Sample 2 with longer soak time of 10 minutes. Diamond was again detected by XRD but showed a weak signal similar to Sample 2.
1 material1 process step
Graphene type A without diamond seed pressed at 55 kBar and 1000°C. Diamond was detected by XRD but only as a weak signal.
1 material1 process step
Graphene type B was tested at conditions including with and without seed at 45 kBar/700°C and 55 kBar/1000°C. None of the experiments yielded detectable diamond by XRD.
1 material1 process step
Graphene type C was tested under the same conditions as Samples 8–11. None of the experiments yielded detectable diamond by XRD.
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline diamond compact
cutting element with polycrystalline superabrasive particles
Materials described outside the worked examples.
superabrasive particles
hexagonal boron nitride (white graphene)
BN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene XRD peak 1 (graphite-like) | 26 deg | C |
graphene XRD peak 2 (graphite-like) | 45 deg |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,216,493Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making diamond comprising: sintering [[a]] nano-scale graphene single or multiple layer material having an aspect ratio of 500 to 2000, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure of up to about 75 kBar.
(Orginal) The method of claim 1, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 1 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 1, wherein the sintering minutes.
The method of claim 1, wherein the high process provide a driving force of greater than diamond.
canceled
canceled
A method of making diamond comprising: mixing [[a]] nano-scale single or multiple layer material graphene having an aspect ratio of 500 to 2000 with diamond seed to form a powder mixture; and Appl. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 3 sintering the powder mixture, in absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.
The method of claim 8, wherein the diamond seed is equal to or greater than about 0.01 0% by weight of the powder mixture.
The mixture of claim 8, wherein the diamond seed is equal to or greater than about 0.1% by weight of the powder mixture.
The method of claim 8, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 8 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 8, wherein the sintering minutes.
The method of claim 8, wherein the high process provide a driving force of greater than diamond. superabrasive particles comprise diamond. is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to
canceled
(Withdrawn-currently amended) A method of making a polycrystalline diamond compact comprising: Mixing nano-scale graphene having an aspect ratio of 500 to 2000 in diamond powder to form a powder mixture with less than about 90 % graphene by volume; and sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar. App l. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 4
The method of claim 16, wherein the powder mixture includes about 1% to about 10% graphene by volume. withdrawn
The method of claim 16, wherein the sintering is performed for a time period of at least about 5 minutes. withdrawn
The method of claim 16 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C. withdrawn
canceled
A cutting element, comprising: a polycrystalline superabrasive particles having substantially free of a catalytic material, wherein the polycrystalline superabrasive particles are converted from a nano-scale material graphine having an aspect ratio of 500 to 2000 with superabrasive particles as seeds at high pressure and high temperature, wherein the sintering was performed at a pressure up to about 75 kBar. withdrawn
The cutting element of claim 23, wherein the withdrawn
25-27. canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 55 kBar and 1000°C for 5 minutes in the absence of a transition metal catalyst. XRD confirmed crystalline diamond formation; the diamond XRD peak at ~44° 2-theta was sharper and stronger than for Sample 2.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 45 kBar and 700°C for 5 minutes in the absence of a transition metal catalyst. XRD detected crystalline diamond, but with a weaker signal than Sample 1.
2 materials1 process step
Graphite with diamond seed was pressed under the same conditions as Sample 1 (55 kBar, 1000°C). No detectable diamond was formed by XRD.
1 material1 process step
Graphite without diamond seed was pressed at the same HPHT conditions. No diamond was detected by XRD.
2 materials1 process step
Repeat of Sample 1 with graphene type A and diamond seed at 55 kBar, 1000°C. Diamond formation confirmed by XRD, consistent with Sample 1.
2 materials1 process step
Repeat of Sample 2 with longer soak time of 10 minutes. Diamond was again detected by XRD but showed a weak signal similar to Sample 2.
1 material1 process step
Graphene type A without diamond seed pressed at 55 kBar and 1000°C. Diamond was detected by XRD but only as a weak signal.
1 material1 process step
Graphene type B was tested at conditions including with and without seed at 45 kBar/700°C and 55 kBar/1000°C. None of the experiments yielded detectable diamond by XRD.
1 material1 process step
Graphene type C was tested under the same conditions as Samples 8–11. None of the experiments yielded detectable diamond by XRD.
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline diamond compact
cutting element with polycrystalline superabrasive particles
Materials described outside the worked examples.
superabrasive particles
hexagonal boron nitride (white graphene)
BN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene XRD peak 1 (graphite-like) | 26 deg | C |
graphene XRD peak 2 (graphite-like) | 45 deg |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,216,493Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of making diamond comprising: sintering [[a]] nano-scale graphene single or multiple layer material having an aspect ratio of 500 to 2000, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure of up to about 75 kBar.
(Orginal) The method of claim 1, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 1 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 1, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 1, wherein the sintering minutes.
The method of claim 1, wherein the high process provide a driving force of greater than diamond.
canceled
canceled
A method of making diamond comprising: mixing [[a]] nano-scale single or multiple layer material graphene having an aspect ratio of 500 to 2000 with diamond seed to form a powder mixture; and Appl. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 3 sintering the powder mixture, in absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar.
The method of claim 8, wherein the diamond seed is equal to or greater than about 0.01 0% by weight of the powder mixture.
The mixture of claim 8, wherein the diamond seed is equal to or greater than about 0.1% by weight of the powder mixture.
The method of claim 8, wherein the sintering is performed for a time period of about 5 minutes.
The method of claim 8 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C.
The method of claim 8, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C.
The method of claim 8, wherein the sintering minutes.
The method of claim 8, wherein the high process provide a driving force of greater than diamond. superabrasive particles comprise diamond. is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to is performed for a time period of up to about pressure and the high temperature of the sintering about 2 kJ/mol when the graphene is converted to
canceled
(Withdrawn-currently amended) A method of making a polycrystalline diamond compact comprising: Mixing nano-scale graphene having an aspect ratio of 500 to 2000 in diamond powder to form a powder mixture with less than about 90 % graphene by volume; and sintering the powder mixture, in the absence of a transition metal catalyst, at high pressure and high temperature, wherein the sintering is performed at a pressure up to about 75 kBar. App l. No. 13/705,693 Attorney's Docket No. DI FG 1377 1US Page 4
The method of claim 16, wherein the powder mixture includes about 1% to about 10% graphene by volume. withdrawn
The method of claim 16, wherein the sintering is performed for a time period of at least about 5 minutes. withdrawn
The method of claim 16 wherein the sintering is performed at a pressure of about 75 kBar and a temperature of at least about 1400 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 700 0 C. withdrawn
The method of claim 16, wherein the sintering is performed at a pressure of at least about kBar and a temperature of at least about 1000 0 C. withdrawn
canceled
A cutting element, comprising: a polycrystalline superabrasive particles having substantially free of a catalytic material, wherein the polycrystalline superabrasive particles are converted from a nano-scale material graphine having an aspect ratio of 500 to 2000 with superabrasive particles as seeds at high pressure and high temperature, wherein the sintering was performed at a pressure up to about 75 kBar. withdrawn
The cutting element of claim 23, wherein the withdrawn
25-27. canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 55 kBar and 1000°C for 5 minutes in the absence of a transition metal catalyst. XRD confirmed crystalline diamond formation; the diamond XRD peak at ~44° 2-theta was sharper and stronger than for Sample 2.
2 materials1 process step
Powder mixture of graphene type A with less than 1 wt% diamond seed was pressed at 45 kBar and 700°C for 5 minutes in the absence of a transition metal catalyst. XRD detected crystalline diamond, but with a weaker signal than Sample 1.
2 materials1 process step
Graphite with diamond seed was pressed under the same conditions as Sample 1 (55 kBar, 1000°C). No detectable diamond was formed by XRD.
1 material1 process step
Graphite without diamond seed was pressed at the same HPHT conditions. No diamond was detected by XRD.
2 materials1 process step
Repeat of Sample 1 with graphene type A and diamond seed at 55 kBar, 1000°C. Diamond formation confirmed by XRD, consistent with Sample 1.
2 materials1 process step
Repeat of Sample 2 with longer soak time of 10 minutes. Diamond was again detected by XRD but showed a weak signal similar to Sample 2.
1 material1 process step
Graphene type A without diamond seed pressed at 55 kBar and 1000°C. Diamond was detected by XRD but only as a weak signal.
1 material1 process step
Graphene type B was tested at conditions including with and without seed at 45 kBar/700°C and 55 kBar/1000°C. None of the experiments yielded detectable diamond by XRD.
1 material1 process step
Graphene type C was tested under the same conditions as Samples 8–11. None of the experiments yielded detectable diamond by XRD.
Layer stacks claimed or described, ordered top of device to substrate.
polycrystalline diamond compact
cutting element with polycrystalline superabrasive particles
Materials described outside the worked examples.
superabrasive particles
hexagonal boron nitride (white graphene)
BN
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
graphene XRD peak 1 (graphite-like) | 26 deg | C |
graphene XRD peak 2 (graphite-like) | 45 deg |
Related documents with shared materials, methods, properties, or citations.
graphene XRD peak 3 (graphite-like) | 55 deg | C |
diamond XRD peak used for identification of diamond phase | 44 deg | C |
Thickness | 50–100 nm | — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 5 minutes | — |
graphene XRD peak 3 (graphite-like) | 55 deg | C |
diamond XRD peak used for identification of diamond phase | 44 deg | C |
Thickness | 50–100 nm | — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 5 minutes | — |
graphene XRD peak 3 (graphite-like) | 55 deg | C |
diamond XRD peak used for identification of diamond phase | 44 deg | C |
Thickness | 50–100 nm | — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 5 minutes | — |
graphene XRD peak 3 (graphite-like) | 55 deg | C |
diamond XRD peak used for identification of diamond phase | 44 deg | C |
Thickness | 50–100 nm | — |
Thickness | ≤ 1 nm | — |
Duration | ≥ 5 minutes | — |