A method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material, comprising [[the]] steps of step S 1. taking a polyimide [[P I]] film as a raw material, and performing polymer sintering at a first temperature, to remove H, O and N atoms to form a microcrystalline carbon precursor, wherein the P I film is obtained by producing polyimide by mutually hybridizing an aromatic diamine with an aromatic polyanhydride and introducing a methyl group, followed by cyclodehydration, polycondensation, and imidization; and the polyimide [[P I]] film is carbonized by the polymer sintering, to form an aromatic heterocyclic compound in a microcrystalline state with a large continuous region, and finally form a microcrystalline carbon precursor having an artificial heterogeneous graphite structure; and step S 2., graphitizing the carbon precursor at a second temperature, to form a multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein after the graphitization, a bendable flexible graphene structure is formed, wherein in at least the step S2, a nano metal material is doped to form quantum dots in the multilayer graphene. Currently amended

A method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material, comprising [[the]] steps of step S 1. taking a polyimide [[P I]] film as a raw material, and performing polymer sintering at a first temperature, to remove H, O and N atoms to form a microcrystalline carbon precursor, wherein the P I film is obtained by producing polyimide by mutually hybridizing an aromatic diamine with an aromatic polyanhydride and introducing a methyl group, followed by cyclodehydration, polycondensation, and imidization; and the polyimide [[P I]] film is carbonized by the polymer sintering, to form an aromatic heterocyclic compound in a microcrystalline state with a large continuous region, and finally form a microcrystalline carbon precursor having an artificial heterogeneous graphite structure; and step S 2., graphitizing the carbon precursor at a second temperature, to form a multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein after the graphitization, a bendable flexible graphene structure is formed, wherein in at least the step S2, a nano metal material is doped to form quantum dots in the multilayer graphene. Currently amended

A method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material, comprising [[the]] steps of step S 1. taking a polyimide [[P I]] film as a raw material, and performing polymer sintering at a first temperature, to remove H, O and N atoms to form a microcrystalline carbon precursor, wherein the P I film is obtained by producing polyimide by mutually hybridizing an aromatic diamine with an aromatic polyanhydride and introducing a methyl group, followed by cyclodehydration, polycondensation, and imidization; and the polyimide [[P I]] film is carbonized by the polymer sintering, to form an aromatic heterocyclic compound in a microcrystalline state with a large continuous region, and finally form a microcrystalline carbon precursor having an artificial heterogeneous graphite structure; and step S 2., graphitizing the carbon precursor at a second temperature, to form a multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein after the graphitization, a bendable flexible graphene structure is formed, wherein in at least the step S2, a nano metal material is doped to form quantum dots in the multilayer graphene. Currently amended

A method for preparing a multilayer graphene quantum carbon-based two-dimensional semiconductor material, comprising [[the]] steps of step S 1. taking a polyimide [[P I]] film as a raw material, and performing polymer sintering at a first temperature, to remove H, O and N atoms to form a microcrystalline carbon precursor, wherein the P I film is obtained by producing polyimide by mutually hybridizing an aromatic diamine with an aromatic polyanhydride and introducing a methyl group, followed by cyclodehydration, polycondensation, and imidization; and the polyimide [[P I]] film is carbonized by the polymer sintering, to form an aromatic heterocyclic compound in a microcrystalline state with a large continuous region, and finally form a microcrystalline carbon precursor having an artificial heterogeneous graphite structure; and step S 2., graphitizing the carbon precursor at a second temperature, to form a multilayer graphene quantum carbon-based two-dimensional semiconductor material, wherein after the graphitization, a bendable flexible graphene structure is formed, wherein in at least the step S2, a nano metal material is doped to form quantum dots in the multilayer graphene. Currently amended