Patent
US 11,575,066N-ZNO/N-GAN/N-ZNO HETEROJUNCTION-BASED BIDIRECTIONAL ULTRAVIOLET LIGHT-EMITTING DIODE AND PREPARATION METHOD THEREFOR
Chunxiang XU
US
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Patent
Atlas literature
Patent
US 11,575,066Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A bidirectional ultraviolet light emitting diode (UV LED) en having an N-ZnO/N-GaN/N-ZnO heterojunction, comprising: two N-ZnO microwires, electron concentration of each of the two N-ZnO micronwires is 1 0 16 -10 19/cm 3, and electron mobility of each of the two N-ZnO micronwire is 5-40 cm 2/V-s, a layer of N-GaN film, a PM M A protective layer and alloy electrodes, wherein said N-ZnO/N-GaN/N-ZnO heterojunction is prepared by a method of laying two pieces of N-ZnO microwires on the layer of N-GaN film, spinning coating a P M MA protective layer on the layer of N-GaN film to fix the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively ' 4-, '. Currently amended
[[A]] The bidirectional UV LED of Claim 1. wherein the layer of N- GaN film i-s- has a thickness between 0.5-10 p m, i t s having an electron concentration i-s of 10 17 -10 19/cm 3, and an electron mobility i-s at 20-100 cm 2/V-s. Currently amended
Canceled
[[A]] The bidirectional UV LED of laim l wherein the electrodes are a ll located on the two pieces of N-ZnO microwires and are Ni/Au alloy electrodes or Ti/Au alloy electrodes. Original
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction comprising: (1) mixing and grinding ZnO powders, having a purity of 99. 97-99.99% and, carbon powders, at having diameters at 500 nm⁻²,000 nm, in a mass ratio of 1:1-1:1.3, forming a mixture and then f il transferring the mixture into a ceramic boat; cutting [[the]] a silicon slice substrate into 3.2 cmx3 cm slices, then ultrasonically cleaning the silicon slices with a mixture solution of acetone and absolute ethanol and then drying the silicon slices with nitrogen[[.]]; placing the silicon slices, as growth substrates,, in a quartz tube, having a length of 20 cm and a diameter of 8 cm with openings at both ends,[[.]] cleaning sapphire slices, as growth substrates, and placing sapphire slices in the quartz tube and is 10 cm away from an opening of the quartz tube[[.]] placing the quartz tube horizontally into a tube furnace for a high temperature reaction, infused with 150 s cc m argon gas and 15 s cc m oxygen gas to form a plurality of N-GaN microwires; the substrate is composed of silicon slices or sa pp hire slices; (2), cleaning the N-GaN substrate by ultrasound with acetone, absolute ethanol and deionized water in sequence and then drying the N-GaN substrate with nitrogen; (3) selecting two N-ZnO microwires from the plurality of N-GaN microwires in Step (1), laying the two N-ZnO microwires on the layer of N-GaN film, then spin-coating a P M MA protective layer on the layer of N-GaN film to fix the two N- ZnO microwires until the PMMA protective layer spreads over the two N-ZnO microwires, and then placing the film on a drying plateform to solidify the PM M A protective layer; then etching the P M MA protective layer with 02 to expose the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively; (4) measuring electrical properties of the N-ZnO/N-GaN/N-ZnO heterojunction-based LED fabricated in Step (3), and measuring its electrically pumped luminescence spectrum. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5,, wherein in Step (1), the high-temperature reaction is carried out between 1,000-1,100 0 C, at a reaction time i-s between 90-180 minutes. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5., wherein in Step (3), the metal plating method is selected from magnetron sputtering, thermal evaporation eo and electron beam evaporation, and [[the]] a plating thickness is between 20-60 nm. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
ZnO powders (purity 99.99%) and carbon powders (diameter 500-2000 nm) are mixed in a 1:1 mass ratio and transferred to a ceramic boat. Silicon and sapphire slices are cleaned and placed in a quartz tube (20 cm length, 8 cm diameter). The tube is pushed into a tube furnace and reacted at high temperature with 150 sccm Ar and 15 sccm O₂ to form N-ZnO microwires. The N-GaN substrate is ultrasonically cleaned and dried. Two N-ZnO microwires are laid on the N-GaN film; PMMA is spin-coated and solidified, then etched with O₂ to expose the microwires. Alloy electrodes are prepared on the two N-ZnO microwires. The resulting LED shows light-emitting wavelength positions at 371 nm and 385 nm under different voltages at 100 Hz, with ultraviolet luminescence accounting for more than 85% of total luminescence.
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional UV LED with N-ZnO/N-GaN/N-ZnO heterojunction
Materials described outside the worked examples.
Ni/Au alloy electrodes
Ni/Au
Ti/Au alloy electrodes
Ti/Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL emission peak 1 under AC drive at 100 Hz | 371 nm | ZnO |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,066Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A bidirectional ultraviolet light emitting diode (UV LED) en having an N-ZnO/N-GaN/N-ZnO heterojunction, comprising: two N-ZnO microwires, electron concentration of each of the two N-ZnO micronwires is 1 0 16 -10 19/cm 3, and electron mobility of each of the two N-ZnO micronwire is 5-40 cm 2/V-s, a layer of N-GaN film, a PM M A protective layer and alloy electrodes, wherein said N-ZnO/N-GaN/N-ZnO heterojunction is prepared by a method of laying two pieces of N-ZnO microwires on the layer of N-GaN film, spinning coating a P M MA protective layer on the layer of N-GaN film to fix the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively ' 4-, '. Currently amended
[[A]] The bidirectional UV LED of Claim 1. wherein the layer of N- GaN film i-s- has a thickness between 0.5-10 p m, i t s having an electron concentration i-s of 10 17 -10 19/cm 3, and an electron mobility i-s at 20-100 cm 2/V-s. Currently amended
Canceled
[[A]] The bidirectional UV LED of laim l wherein the electrodes are a ll located on the two pieces of N-ZnO microwires and are Ni/Au alloy electrodes or Ti/Au alloy electrodes. Original
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction comprising: (1) mixing and grinding ZnO powders, having a purity of 99. 97-99.99% and, carbon powders, at having diameters at 500 nm⁻²,000 nm, in a mass ratio of 1:1-1:1.3, forming a mixture and then f il transferring the mixture into a ceramic boat; cutting [[the]] a silicon slice substrate into 3.2 cmx3 cm slices, then ultrasonically cleaning the silicon slices with a mixture solution of acetone and absolute ethanol and then drying the silicon slices with nitrogen[[.]]; placing the silicon slices, as growth substrates,, in a quartz tube, having a length of 20 cm and a diameter of 8 cm with openings at both ends,[[.]] cleaning sapphire slices, as growth substrates, and placing sapphire slices in the quartz tube and is 10 cm away from an opening of the quartz tube[[.]] placing the quartz tube horizontally into a tube furnace for a high temperature reaction, infused with 150 s cc m argon gas and 15 s cc m oxygen gas to form a plurality of N-GaN microwires; the substrate is composed of silicon slices or sa pp hire slices; (2), cleaning the N-GaN substrate by ultrasound with acetone, absolute ethanol and deionized water in sequence and then drying the N-GaN substrate with nitrogen; (3) selecting two N-ZnO microwires from the plurality of N-GaN microwires in Step (1), laying the two N-ZnO microwires on the layer of N-GaN film, then spin-coating a P M MA protective layer on the layer of N-GaN film to fix the two N- ZnO microwires until the PMMA protective layer spreads over the two N-ZnO microwires, and then placing the film on a drying plateform to solidify the PM M A protective layer; then etching the P M MA protective layer with 02 to expose the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively; (4) measuring electrical properties of the N-ZnO/N-GaN/N-ZnO heterojunction-based LED fabricated in Step (3), and measuring its electrically pumped luminescence spectrum. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5,, wherein in Step (1), the high-temperature reaction is carried out between 1,000-1,100 0 C, at a reaction time i-s between 90-180 minutes. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5., wherein in Step (3), the metal plating method is selected from magnetron sputtering, thermal evaporation eo and electron beam evaporation, and [[the]] a plating thickness is between 20-60 nm. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
ZnO powders (purity 99.99%) and carbon powders (diameter 500-2000 nm) are mixed in a 1:1 mass ratio and transferred to a ceramic boat. Silicon and sapphire slices are cleaned and placed in a quartz tube (20 cm length, 8 cm diameter). The tube is pushed into a tube furnace and reacted at high temperature with 150 sccm Ar and 15 sccm O₂ to form N-ZnO microwires. The N-GaN substrate is ultrasonically cleaned and dried. Two N-ZnO microwires are laid on the N-GaN film; PMMA is spin-coated and solidified, then etched with O₂ to expose the microwires. Alloy electrodes are prepared on the two N-ZnO microwires. The resulting LED shows light-emitting wavelength positions at 371 nm and 385 nm under different voltages at 100 Hz, with ultraviolet luminescence accounting for more than 85% of total luminescence.
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional UV LED with N-ZnO/N-GaN/N-ZnO heterojunction
Materials described outside the worked examples.
Ni/Au alloy electrodes
Ni/Au
Ti/Au alloy electrodes
Ti/Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL emission peak 1 under AC drive at 100 Hz | 371 nm | ZnO |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,066Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A bidirectional ultraviolet light emitting diode (UV LED) en having an N-ZnO/N-GaN/N-ZnO heterojunction, comprising: two N-ZnO microwires, electron concentration of each of the two N-ZnO micronwires is 1 0 16 -10 19/cm 3, and electron mobility of each of the two N-ZnO micronwire is 5-40 cm 2/V-s, a layer of N-GaN film, a PM M A protective layer and alloy electrodes, wherein said N-ZnO/N-GaN/N-ZnO heterojunction is prepared by a method of laying two pieces of N-ZnO microwires on the layer of N-GaN film, spinning coating a P M MA protective layer on the layer of N-GaN film to fix the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively ' 4-, '. Currently amended
[[A]] The bidirectional UV LED of Claim 1. wherein the layer of N- GaN film i-s- has a thickness between 0.5-10 p m, i t s having an electron concentration i-s of 10 17 -10 19/cm 3, and an electron mobility i-s at 20-100 cm 2/V-s. Currently amended
Canceled
[[A]] The bidirectional UV LED of laim l wherein the electrodes are a ll located on the two pieces of N-ZnO microwires and are Ni/Au alloy electrodes or Ti/Au alloy electrodes. Original
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction comprising: (1) mixing and grinding ZnO powders, having a purity of 99. 97-99.99% and, carbon powders, at having diameters at 500 nm⁻²,000 nm, in a mass ratio of 1:1-1:1.3, forming a mixture and then f il transferring the mixture into a ceramic boat; cutting [[the]] a silicon slice substrate into 3.2 cmx3 cm slices, then ultrasonically cleaning the silicon slices with a mixture solution of acetone and absolute ethanol and then drying the silicon slices with nitrogen[[.]]; placing the silicon slices, as growth substrates,, in a quartz tube, having a length of 20 cm and a diameter of 8 cm with openings at both ends,[[.]] cleaning sapphire slices, as growth substrates, and placing sapphire slices in the quartz tube and is 10 cm away from an opening of the quartz tube[[.]] placing the quartz tube horizontally into a tube furnace for a high temperature reaction, infused with 150 s cc m argon gas and 15 s cc m oxygen gas to form a plurality of N-GaN microwires; the substrate is composed of silicon slices or sa pp hire slices; (2), cleaning the N-GaN substrate by ultrasound with acetone, absolute ethanol and deionized water in sequence and then drying the N-GaN substrate with nitrogen; (3) selecting two N-ZnO microwires from the plurality of N-GaN microwires in Step (1), laying the two N-ZnO microwires on the layer of N-GaN film, then spin-coating a P M MA protective layer on the layer of N-GaN film to fix the two N- ZnO microwires until the PMMA protective layer spreads over the two N-ZnO microwires, and then placing the film on a drying plateform to solidify the PM M A protective layer; then etching the P M MA protective layer with 02 to expose the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively; (4) measuring electrical properties of the N-ZnO/N-GaN/N-ZnO heterojunction-based LED fabricated in Step (3), and measuring its electrically pumped luminescence spectrum. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5,, wherein in Step (1), the high-temperature reaction is carried out between 1,000-1,100 0 C, at a reaction time i-s between 90-180 minutes. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5., wherein in Step (3), the metal plating method is selected from magnetron sputtering, thermal evaporation eo and electron beam evaporation, and [[the]] a plating thickness is between 20-60 nm. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
ZnO powders (purity 99.99%) and carbon powders (diameter 500-2000 nm) are mixed in a 1:1 mass ratio and transferred to a ceramic boat. Silicon and sapphire slices are cleaned and placed in a quartz tube (20 cm length, 8 cm diameter). The tube is pushed into a tube furnace and reacted at high temperature with 150 sccm Ar and 15 sccm O₂ to form N-ZnO microwires. The N-GaN substrate is ultrasonically cleaned and dried. Two N-ZnO microwires are laid on the N-GaN film; PMMA is spin-coated and solidified, then etched with O₂ to expose the microwires. Alloy electrodes are prepared on the two N-ZnO microwires. The resulting LED shows light-emitting wavelength positions at 371 nm and 385 nm under different voltages at 100 Hz, with ultraviolet luminescence accounting for more than 85% of total luminescence.
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional UV LED with N-ZnO/N-GaN/N-ZnO heterojunction
Materials described outside the worked examples.
Ni/Au alloy electrodes
Ni/Au
Ti/Au alloy electrodes
Ti/Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL emission peak 1 under AC drive at 100 Hz | 371 nm | ZnO |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,575,066Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A bidirectional ultraviolet light emitting diode (UV LED) en having an N-ZnO/N-GaN/N-ZnO heterojunction, comprising: two N-ZnO microwires, electron concentration of each of the two N-ZnO micronwires is 1 0 16 -10 19/cm 3, and electron mobility of each of the two N-ZnO micronwire is 5-40 cm 2/V-s, a layer of N-GaN film, a PM M A protective layer and alloy electrodes, wherein said N-ZnO/N-GaN/N-ZnO heterojunction is prepared by a method of laying two pieces of N-ZnO microwires on the layer of N-GaN film, spinning coating a P M MA protective layer on the layer of N-GaN film to fix the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively ' 4-, '. Currently amended
[[A]] The bidirectional UV LED of Claim 1. wherein the layer of N- GaN film i-s- has a thickness between 0.5-10 p m, i t s having an electron concentration i-s of 10 17 -10 19/cm 3, and an electron mobility i-s at 20-100 cm 2/V-s. Currently amended
Canceled
[[A]] The bidirectional UV LED of laim l wherein the electrodes are a ll located on the two pieces of N-ZnO microwires and are Ni/Au alloy electrodes or Ti/Au alloy electrodes. Original
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction comprising: (1) mixing and grinding ZnO powders, having a purity of 99. 97-99.99% and, carbon powders, at having diameters at 500 nm⁻²,000 nm, in a mass ratio of 1:1-1:1.3, forming a mixture and then f il transferring the mixture into a ceramic boat; cutting [[the]] a silicon slice substrate into 3.2 cmx3 cm slices, then ultrasonically cleaning the silicon slices with a mixture solution of acetone and absolute ethanol and then drying the silicon slices with nitrogen[[.]]; placing the silicon slices, as growth substrates,, in a quartz tube, having a length of 20 cm and a diameter of 8 cm with openings at both ends,[[.]] cleaning sapphire slices, as growth substrates, and placing sapphire slices in the quartz tube and is 10 cm away from an opening of the quartz tube[[.]] placing the quartz tube horizontally into a tube furnace for a high temperature reaction, infused with 150 s cc m argon gas and 15 s cc m oxygen gas to form a plurality of N-GaN microwires; the substrate is composed of silicon slices or sa pp hire slices; (2), cleaning the N-GaN substrate by ultrasound with acetone, absolute ethanol and deionized water in sequence and then drying the N-GaN substrate with nitrogen; (3) selecting two N-ZnO microwires from the plurality of N-GaN microwires in Step (1), laying the two N-ZnO microwires on the layer of N-GaN film, then spin-coating a P M MA protective layer on the layer of N-GaN film to fix the two N- ZnO microwires until the PMMA protective layer spreads over the two N-ZnO microwires, and then placing the film on a drying plateform to solidify the PM M A protective layer; then etching the P M MA protective layer with 02 to expose the two N-ZnO microwires, and preparing alloy electrodes on the two N-ZnO microwires, respectively; (4) measuring electrical properties of the N-ZnO/N-GaN/N-ZnO heterojunction-based LED fabricated in Step (3), and measuring its electrically pumped luminescence spectrum. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5,, wherein in Step (1), the high-temperature reaction is carried out between 1,000-1,100 0 C, at a reaction time i-s between 90-180 minutes. Currently amended
The preparation method of a bidirectional UV LED based on N- ZnO/N-GaN/N-ZnO heterojunction of Claim 5., wherein in Step (3), the metal plating method is selected from magnetron sputtering, thermal evaporation eo and electron beam evaporation, and [[the]] a plating thickness is between 20-60 nm. Currently amended
Embodiments described in the patent, grouped by the materials and process steps they use.
6 materials2 process steps
ZnO powders (purity 99.99%) and carbon powders (diameter 500-2000 nm) are mixed in a 1:1 mass ratio and transferred to a ceramic boat. Silicon and sapphire slices are cleaned and placed in a quartz tube (20 cm length, 8 cm diameter). The tube is pushed into a tube furnace and reacted at high temperature with 150 sccm Ar and 15 sccm O₂ to form N-ZnO microwires. The N-GaN substrate is ultrasonically cleaned and dried. Two N-ZnO microwires are laid on the N-GaN film; PMMA is spin-coated and solidified, then etched with O₂ to expose the microwires. Alloy electrodes are prepared on the two N-ZnO microwires. The resulting LED shows light-emitting wavelength positions at 371 nm and 385 nm under different voltages at 100 Hz, with ultraviolet luminescence accounting for more than 85% of total luminescence.
Layer stacks claimed or described, ordered top of device to substrate.
bidirectional UV LED with N-ZnO/N-GaN/N-ZnO heterojunction
Materials described outside the worked examples.
Ni/Au alloy electrodes
Ni/Au
Ti/Au alloy electrodes
Ti/Au
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
EL emission peak 1 under AC drive at 100 Hz | 371 nm | ZnO |
Related documents with shared materials, methods, properties, or citations.
| 385 nm |
ZnO |
UV luminescence fraction of total LED emission (Embodiment 1) | >85% % | — |
Thickness | 5–40 cm | — |
Thickness | 20–100 cm | — |
Duration | 90–180 minutes | — |
Thickness | 20–60 nm | — |
Temperature | 1000–1100 °C | — |
| 385 nm |
ZnO |
UV luminescence fraction of total LED emission (Embodiment 1) | >85% % | — |
Thickness | 5–40 cm | — |
Thickness | 20–100 cm | — |
Duration | 90–180 minutes | — |
Thickness | 20–60 nm | — |
Temperature | 1000–1100 °C | — |
| 385 nm |
ZnO |
UV luminescence fraction of total LED emission (Embodiment 1) | >85% % | — |
Thickness | 5–40 cm | — |
Thickness | 20–100 cm | — |
Duration | 90–180 minutes | — |
Thickness | 20–60 nm | — |
Temperature | 1000–1100 °C | — |
| 385 nm |
ZnO |
UV luminescence fraction of total LED emission (Embodiment 1) | >85% % | — |
Thickness | 5–40 cm | — |
Thickness | 20–100 cm | — |
Duration | 90–180 minutes | — |
Thickness | 20–60 nm | — |
Temperature | 1000–1100 °C | — |