-I₁ caiceled

(or igi nai) A light emitting diode (LED) with three- dimensional gallium ni itr ide (GaN) pillar structuires having planar surfaces, die LED) comprising: a substrate with a top surface having a plurality of first electrode digits formed in a fi rst metal layer, and a plurality of opposing second electrode digits formed in a second metal lay er; a p lural ity of GaN pillar str uctures, each GaN pillar structure bridging a gap between a first electrode digit a corresponding second elec t rode digit: each GaN' pillar s tructure comprising: an ri-doped GaN (n-GaN) pillar having a first end overlying a corresponding first electrode digit, a second end connected to a corresponding seco nd electrode digit, with a t l east one of the ends formed ini a e'piane, and pla nar si dewa lls perpendicu lar to the eplane, formed in a plane selected from a group con sis ting of an rpianie and a- plane family: a multiple quantum we ll (MQW) layer over lyi n g the n- GI aN pillar sidewa i ls and the GI aN pillar first end; a rid, a la yer of p-oped GIaN (p-GaN) overlying the MQW layer.

Thlie LED of c lai m 12 further comprising: a Ni layer overlying the p-GaN lay er of each GaNl pillar str ucture; a transparent conductor overlying the N i lay er, wherein the combination of the N i lay er arid transparent conductor electrically connect the p-Gail la yer of each GaN p illa r structure to a corresponding f irs t electrocde digit; and, a metal interconnect interposed between each exposed n-GaN p illa r second end and the under lyi ng second elec trode dig it.

15-6. canc ele d canceled

A method for fabric ati ng a li gh t e mitting diode (LED)) using three-dimension al g alliu m n itri d e (Gail) p illar structu res with planar surfaces, the method comprising: depos iti ng the plur alit y of GaN p illa r struc ture s on a fi rst subs trate, having a first end, a second end, with at lea s t one of t h e e nds formed in a c-plan e, and plan ar si dewalls perpendicu lar t o the c-plane and formed in an a-plan e fa mily, with the ri-doped Gail p illar si dewall s ali gned parallel to a top surf ace of t h e fi rst sub stra te; con necti ng a firs t e nd of eac h GaN p illar structu re to a first metal la y er to form a first ele ctrode; etching a sec ond end of each GaN pillar struct ure to expo se the n-GaN pillar sec ond end; and, subsequent to etching th e se cond end of ea ch GaN p illa r structu re, connecting th e se cond end of ea ch GaN p illa r struct ure to a se cond met al layer t o form a second elec trode. SLA3086₃ responsei 3

The method of c lai m 17 wherein connecting the first end of each GaN pillar str ucture to a first me tal laye r i ricluides conformaly depo siti ng a Ni layer overlying the first substrate to p sur face arid GaN pillar str uctures; arid, conformaly depo siti ng a transparen t c onductor overlying the Ni layer. 22 Theli method of claim 21 wherein etching the second end of each GaN pillar structure to expose the n-GaN second end include s, p rior to etc hin g the s econd end of each GaN pillar str ucture, etching to remo ve the tra nsparen t c onducto r a nd Ni layers overlying the second end of each GIaN p ill ar structure: and, wherein connecting the second end of each GaN pillar str ucture to the second metal laye r i n clu de s f orming a meta l i nterconnect layer interposed between the exposed n-GaN and the s econd me tal layer.

The method of c lai m 21 wherein conne cti ng the first end of each GaN p illar str uctuLire to a first metal layer SLA₃₀₈₆ 3 respo nse l 5 includes forming a met al i nterconnect layer over the first me tal layer, subsequen t t o depo siti ng the tra nsparent conductor.

-I₁ caiceled

(or igi nai) A light emitting diode (LED) with three- dimensional gallium ni itr ide (GaN) pillar structuires having planar surfaces, die LED) comprising: a substrate with a top surface having a plurality of first electrode digits formed in a fi rst metal layer, and a plurality of opposing second electrode digits formed in a second metal lay er; a p lural ity of GaN pillar str uctures, each GaN pillar structure bridging a gap between a first electrode digit a corresponding second elec t rode digit: each GaN' pillar s tructure comprising: an ri-doped GaN (n-GaN) pillar having a first end overlying a corresponding first electrode digit, a second end connected to a corresponding seco nd electrode digit, with a t l east one of the ends formed ini a e'piane, and pla nar si dewa lls perpendicu lar to the eplane, formed in a plane selected from a group con sis ting of an rpianie and a- plane family: a multiple quantum we ll (MQW) layer over lyi n g the n- GI aN pillar sidewa i ls and the GI aN pillar first end; a rid, a la yer of p-oped GIaN (p-GaN) overlying the MQW layer.

Thlie LED of c lai m 12 further comprising: a Ni layer overlying the p-GaN lay er of each GaNl pillar str ucture; a transparent conductor overlying the N i lay er, wherein the combination of the N i lay er arid transparent conductor electrically connect the p-Gail la yer of each GaN p illa r structure to a corresponding f irs t electrocde digit; and, a metal interconnect interposed between each exposed n-GaN p illa r second end and the under lyi ng second elec trode dig it.

15-6. canc ele d canceled

A method for fabric ati ng a li gh t e mitting diode (LED)) using three-dimension al g alliu m n itri d e (Gail) p illar structu res with planar surfaces, the method comprising: depos iti ng the plur alit y of GaN p illa r struc ture s on a fi rst subs trate, having a first end, a second end, with at lea s t one of t h e e nds formed in a c-plan e, and plan ar si dewalls perpendicu lar t o the c-plane and formed in an a-plan e fa mily, with the ri-doped Gail p illar si dewall s ali gned parallel to a top surf ace of t h e fi rst sub stra te; con necti ng a firs t e nd of eac h GaN p illar structu re to a first metal la y er to form a first ele ctrode; etching a sec ond end of each GaN pillar struct ure to expo se the n-GaN pillar sec ond end; and, subsequent to etching th e se cond end of ea ch GaN p illa r structu re, connecting th e se cond end of ea ch GaN p illa r struct ure to a se cond met al layer t o form a second elec trode. SLA3086₃ responsei 3

The method of c lai m 17 wherein connecting the first end of each GaN pillar str ucture to a first me tal laye r i ricluides conformaly depo siti ng a Ni layer overlying the first substrate to p sur face arid GaN pillar str uctures; arid, conformaly depo siti ng a transparen t c onductor overlying the Ni layer. 22 Theli method of claim 21 wherein etching the second end of each GaN pillar structure to expose the n-GaN second end include s, p rior to etc hin g the s econd end of each GaN pillar str ucture, etching to remo ve the tra nsparen t c onducto r a nd Ni layers overlying the second end of each GIaN p ill ar structure: and, wherein connecting the second end of each GaN pillar str ucture to the second metal laye r i n clu de s f orming a meta l i nterconnect layer interposed between the exposed n-GaN and the s econd me tal layer.

The method of c lai m 21 wherein conne cti ng the first end of each GaN p illar str uctuLire to a first metal layer SLA₃₀₈₆ 3 respo nse l 5 includes forming a met al i nterconnect layer over the first me tal layer, subsequen t t o depo siti ng the tra nsparent conductor.

-I₁ caiceled

(or igi nai) A light emitting diode (LED) with three- dimensional gallium ni itr ide (GaN) pillar structuires having planar surfaces, die LED) comprising: a substrate with a top surface having a plurality of first electrode digits formed in a fi rst metal layer, and a plurality of opposing second electrode digits formed in a second metal lay er; a p lural ity of GaN pillar str uctures, each GaN pillar structure bridging a gap between a first electrode digit a corresponding second elec t rode digit: each GaN' pillar s tructure comprising: an ri-doped GaN (n-GaN) pillar having a first end overlying a corresponding first electrode digit, a second end connected to a corresponding seco nd electrode digit, with a t l east one of the ends formed ini a e'piane, and pla nar si dewa lls perpendicu lar to the eplane, formed in a plane selected from a group con sis ting of an rpianie and a- plane family: a multiple quantum we ll (MQW) layer over lyi n g the n- GI aN pillar sidewa i ls and the GI aN pillar first end; a rid, a la yer of p-oped GIaN (p-GaN) overlying the MQW layer.

Thlie LED of c lai m 12 further comprising: a Ni layer overlying the p-GaN lay er of each GaNl pillar str ucture; a transparent conductor overlying the N i lay er, wherein the combination of the N i lay er arid transparent conductor electrically connect the p-Gail la yer of each GaN p illa r structure to a corresponding f irs t electrocde digit; and, a metal interconnect interposed between each exposed n-GaN p illa r second end and the under lyi ng second elec trode dig it.

15-6. canc ele d canceled

A method for fabric ati ng a li gh t e mitting diode (LED)) using three-dimension al g alliu m n itri d e (Gail) p illar structu res with planar surfaces, the method comprising: depos iti ng the plur alit y of GaN p illa r struc ture s on a fi rst subs trate, having a first end, a second end, with at lea s t one of t h e e nds formed in a c-plan e, and plan ar si dewalls perpendicu lar t o the c-plane and formed in an a-plan e fa mily, with the ri-doped Gail p illar si dewall s ali gned parallel to a top surf ace of t h e fi rst sub stra te; con necti ng a firs t e nd of eac h GaN p illar structu re to a first metal la y er to form a first ele ctrode; etching a sec ond end of each GaN pillar struct ure to expo se the n-GaN pillar sec ond end; and, subsequent to etching th e se cond end of ea ch GaN p illa r structu re, connecting th e se cond end of ea ch GaN p illa r struct ure to a se cond met al layer t o form a second elec trode. SLA3086₃ responsei 3

The method of c lai m 17 wherein connecting the first end of each GaN pillar str ucture to a first me tal laye r i ricluides conformaly depo siti ng a Ni layer overlying the first substrate to p sur face arid GaN pillar str uctures; arid, conformaly depo siti ng a transparen t c onductor overlying the Ni layer. 22 Theli method of claim 21 wherein etching the second end of each GaN pillar structure to expose the n-GaN second end include s, p rior to etc hin g the s econd end of each GaN pillar str ucture, etching to remo ve the tra nsparen t c onducto r a nd Ni layers overlying the second end of each GIaN p ill ar structure: and, wherein connecting the second end of each GaN pillar str ucture to the second metal laye r i n clu de s f orming a meta l i nterconnect layer interposed between the exposed n-GaN and the s econd me tal layer.

The method of c lai m 21 wherein conne cti ng the first end of each GaN p illar str uctuLire to a first metal layer SLA₃₀₈₆ 3 respo nse l 5 includes forming a met al i nterconnect layer over the first me tal layer, subsequen t t o depo siti ng the tra nsparent conductor.

-I₁ caiceled

(or igi nai) A light emitting diode (LED) with three- dimensional gallium ni itr ide (GaN) pillar structuires having planar surfaces, die LED) comprising: a substrate with a top surface having a plurality of first electrode digits formed in a fi rst metal layer, and a plurality of opposing second electrode digits formed in a second metal lay er; a p lural ity of GaN pillar str uctures, each GaN pillar structure bridging a gap between a first electrode digit a corresponding second elec t rode digit: each GaN' pillar s tructure comprising: an ri-doped GaN (n-GaN) pillar having a first end overlying a corresponding first electrode digit, a second end connected to a corresponding seco nd electrode digit, with a t l east one of the ends formed ini a e'piane, and pla nar si dewa lls perpendicu lar to the eplane, formed in a plane selected from a group con sis ting of an rpianie and a- plane family: a multiple quantum we ll (MQW) layer over lyi n g the n- GI aN pillar sidewa i ls and the GI aN pillar first end; a rid, a la yer of p-oped GIaN (p-GaN) overlying the MQW layer.

Thlie LED of c lai m 12 further comprising: a Ni layer overlying the p-GaN lay er of each GaNl pillar str ucture; a transparent conductor overlying the N i lay er, wherein the combination of the N i lay er arid transparent conductor electrically connect the p-Gail la yer of each GaN p illa r structure to a corresponding f irs t electrocde digit; and, a metal interconnect interposed between each exposed n-GaN p illa r second end and the under lyi ng second elec trode dig it.

15-6. canc ele d canceled

A method for fabric ati ng a li gh t e mitting diode (LED)) using three-dimension al g alliu m n itri d e (Gail) p illar structu res with planar surfaces, the method comprising: depos iti ng the plur alit y of GaN p illa r struc ture s on a fi rst subs trate, having a first end, a second end, with at lea s t one of t h e e nds formed in a c-plan e, and plan ar si dewalls perpendicu lar t o the c-plane and formed in an a-plan e fa mily, with the ri-doped Gail p illar si dewall s ali gned parallel to a top surf ace of t h e fi rst sub stra te; con necti ng a firs t e nd of eac h GaN p illar structu re to a first metal la y er to form a first ele ctrode; etching a sec ond end of each GaN pillar struct ure to expo se the n-GaN pillar sec ond end; and, subsequent to etching th e se cond end of ea ch GaN p illa r structu re, connecting th e se cond end of ea ch GaN p illa r struct ure to a se cond met al layer t o form a second elec trode. SLA3086₃ responsei 3

The method of c lai m 17 wherein connecting the first end of each GaN pillar str ucture to a first me tal laye r i ricluides conformaly depo siti ng a Ni layer overlying the first substrate to p sur face arid GaN pillar str uctures; arid, conformaly depo siti ng a transparen t c onductor overlying the Ni layer. 22 Theli method of claim 21 wherein etching the second end of each GaN pillar structure to expose the n-GaN second end include s, p rior to etc hin g the s econd end of each GaN pillar str ucture, etching to remo ve the tra nsparen t c onducto r a nd Ni layers overlying the second end of each GIaN p ill ar structure: and, wherein connecting the second end of each GaN pillar str ucture to the second metal laye r i n clu de s f orming a meta l i nterconnect layer interposed between the exposed n-GaN and the s econd me tal layer.

The method of c lai m 21 wherein conne cti ng the first end of each GaN p illar str uctuLire to a first metal layer SLA₃₀₈₆ 3 respo nse l 5 includes forming a met al i nterconnect layer over the first me tal layer, subsequen t t o depo siti ng the tra nsparent conductor.