Patent
Atlas literature
Patent
US 12,431,096 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a schematic structural diagram illustrating a section of a second region in
FIG. 3 is a schematic structural diagram illustrating a section of a first region in
FIG. 4 is a schematic structural diagram illustrating a section of a first region according to a second embodiment of the present disclosure.
FIG. 5. To facilitate understanding of the present disclosure, all reference numerals appearing in the present disclosure are listed below. Display panel 1, …
FIG. 6 is a schematic structural diagram illustrating a section of a third region in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein the substrate has a plurality of first charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures in the second region is electrically connected to corre-sponding one of the plurality of first charge storage regions to store generated light-sensing charges; wherein a plurality of first transistors are provided on the substrate, a source region or a drain region of at least one of the plurality of first transistors is the first charge storage region; wherein a first metal interconnection sub-layer is provided between the substrate and the plurality of first GaN-based LED structures in the second region, and first metal interconnection structures of the first metal interconnection sub-layer are configured to be electrically connected to the plurality of first transistors; and wherein the plurality of first transistors form at least first light-sensing processing circuits, and the first light-sensing processing circuits sense a light-sensing elec-trical signal generated by the plurality of first GaN-based LED structures in the second region; when the light-sensing electrical signal sensed by the first light-sensing processing circuits from the plurality of first GaN-based LED structures in the second region is not greater than a fifth threshold, the light-sensing electri-cal signal is stored as an infrared light incidence signal.
The display panel of claim 1, wherein the first region further comprises a visible light imaging state, and in the visible light imaging state, the first GaN-based LED units in the first region are configured to sense visible light.
The display panel of claim 1, wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, each of the plurality of first GaN-based LED structures comprises a first red light sensing and emitting layer, a first green light sensing and emitting layer, a first blue light sensing and emitting layer, and an infrared light sensing and emitting layer stacked; materials of the first red light sensing and emitting layer, the first green light sensing and emitting layer, the first blue light sensing and emitting layer, and the infrared light sensing and emitting layer each comprises a GaN-based material containing Indium (In), with dif-ferent components of In from each other; when sensing light, light-sensing charges are generated or not generated according to different wavelengths of received light; when emitting light, different wave-lengths and brightness of light are generated based on a magnitude of applied voltage.
The display panel of claim 1, wherein first conductive plugs are provided in the first metal interconnection sublayer, a first end of each of the first conductive plugs is connected to corresponding one of the plurality of first GaN-based LED structures in the second region, and a second end of each of the first conductive plugs is electri-cally connected to corresponding one of the plurality of first charge storage regions.
The display panel of claim 1, wherein the plurality of first transistors at least further form first display driving circuits, input ends of the first display driving circuits are configured to receive a red display driving signal, a green display driving signal, and a blue display driving signal, output ends of the first display driving circuits are connected to the first metal interconnection structures, and the red display driving signal, the green display driving signal, and the blue display driving signal are transmitted via the first metal interconnection structures to the plurality of first GaN-based LED structures in the second region.
The display panel of claim 1, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sub-layer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electrically connected to the plurality of second transistors.
The display panel of claim 1, wherein the display region further comprises a third region, the third region comprises second GaN-based LED units arranged in an array, and the third region comprises a display state and a visible light recognition state, B₂ wherein in the display state, the second GaN-based LED units are configured to display a visible light screen, and in the visible light recognition state, some of the second GaN-based LED units are configured for illu-mination and the remainder of the second GaN-based LED units are configured for sensing visible light.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; and wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, the plurality of second transistors form at least infrared light emitting circuits, input ends of the infrared light emitting circuits are configured to receive an infrared emitting signal, output ends of the infrared light emit-ting circuits are connected to the second metal interconnection structures, and the infrared emitting signal is transmitted via the second metal interconnection structures to the plurality of first GaN-based LED structures in the first region.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; wherein the substrate has a plurality of second charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures B₂ in the first region is electrically connected to corre-sponding one of the plurality of second charge storage regions to store generated light-sensing charges; wherein the plurality of second transistors form at least second light-sensing processing circuits, and the sec-ond light-sensing processing circuits sense a light-sensing electrical signal generated by the plurality of first GaN-based LED structures in the first region; wherein when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a sixth threshold, the light-sensing electrical signal is stored as a blue light inci-dence signal; when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a seventh threshold and not greater than the sixth threshold, the light-sensing elec-trical signal is stored as a green light incidence signal; and when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than an eighth threshold and not greater than the seventh threshold, the light-sensing electrical signal is stored as a red light incidence signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED display panel with infrared recognition (first region/second region)
Materials described outside the worked examples.
GaN-based LED material (first GaN-based LED structures)
first red light sensing and emitting layer (InGaN, In 0.4-0.6)
InxGa(1-x)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–720 nm | — |
Thickness |
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US 12,431,096 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a schematic structural diagram illustrating a section of a second region in
FIG. 3 is a schematic structural diagram illustrating a section of a first region in
FIG. 4 is a schematic structural diagram illustrating a section of a first region according to a second embodiment of the present disclosure.
FIG. 5. To facilitate understanding of the present disclosure, all reference numerals appearing in the present disclosure are listed below. Display panel 1, …
FIG. 6 is a schematic structural diagram illustrating a section of a third region in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein the substrate has a plurality of first charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures in the second region is electrically connected to corre-sponding one of the plurality of first charge storage regions to store generated light-sensing charges; wherein a plurality of first transistors are provided on the substrate, a source region or a drain region of at least one of the plurality of first transistors is the first charge storage region; wherein a first metal interconnection sub-layer is provided between the substrate and the plurality of first GaN-based LED structures in the second region, and first metal interconnection structures of the first metal interconnection sub-layer are configured to be electrically connected to the plurality of first transistors; and wherein the plurality of first transistors form at least first light-sensing processing circuits, and the first light-sensing processing circuits sense a light-sensing elec-trical signal generated by the plurality of first GaN-based LED structures in the second region; when the light-sensing electrical signal sensed by the first light-sensing processing circuits from the plurality of first GaN-based LED structures in the second region is not greater than a fifth threshold, the light-sensing electri-cal signal is stored as an infrared light incidence signal.
The display panel of claim 1, wherein the first region further comprises a visible light imaging state, and in the visible light imaging state, the first GaN-based LED units in the first region are configured to sense visible light.
The display panel of claim 1, wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, each of the plurality of first GaN-based LED structures comprises a first red light sensing and emitting layer, a first green light sensing and emitting layer, a first blue light sensing and emitting layer, and an infrared light sensing and emitting layer stacked; materials of the first red light sensing and emitting layer, the first green light sensing and emitting layer, the first blue light sensing and emitting layer, and the infrared light sensing and emitting layer each comprises a GaN-based material containing Indium (In), with dif-ferent components of In from each other; when sensing light, light-sensing charges are generated or not generated according to different wavelengths of received light; when emitting light, different wave-lengths and brightness of light are generated based on a magnitude of applied voltage.
The display panel of claim 1, wherein first conductive plugs are provided in the first metal interconnection sublayer, a first end of each of the first conductive plugs is connected to corresponding one of the plurality of first GaN-based LED structures in the second region, and a second end of each of the first conductive plugs is electri-cally connected to corresponding one of the plurality of first charge storage regions.
The display panel of claim 1, wherein the plurality of first transistors at least further form first display driving circuits, input ends of the first display driving circuits are configured to receive a red display driving signal, a green display driving signal, and a blue display driving signal, output ends of the first display driving circuits are connected to the first metal interconnection structures, and the red display driving signal, the green display driving signal, and the blue display driving signal are transmitted via the first metal interconnection structures to the plurality of first GaN-based LED structures in the second region.
The display panel of claim 1, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sub-layer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electrically connected to the plurality of second transistors.
The display panel of claim 1, wherein the display region further comprises a third region, the third region comprises second GaN-based LED units arranged in an array, and the third region comprises a display state and a visible light recognition state, B₂ wherein in the display state, the second GaN-based LED units are configured to display a visible light screen, and in the visible light recognition state, some of the second GaN-based LED units are configured for illu-mination and the remainder of the second GaN-based LED units are configured for sensing visible light.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; and wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, the plurality of second transistors form at least infrared light emitting circuits, input ends of the infrared light emitting circuits are configured to receive an infrared emitting signal, output ends of the infrared light emit-ting circuits are connected to the second metal interconnection structures, and the infrared emitting signal is transmitted via the second metal interconnection structures to the plurality of first GaN-based LED structures in the first region.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; wherein the substrate has a plurality of second charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures B₂ in the first region is electrically connected to corre-sponding one of the plurality of second charge storage regions to store generated light-sensing charges; wherein the plurality of second transistors form at least second light-sensing processing circuits, and the sec-ond light-sensing processing circuits sense a light-sensing electrical signal generated by the plurality of first GaN-based LED structures in the first region; wherein when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a sixth threshold, the light-sensing electrical signal is stored as a blue light inci-dence signal; when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a seventh threshold and not greater than the sixth threshold, the light-sensing elec-trical signal is stored as a green light incidence signal; and when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than an eighth threshold and not greater than the seventh threshold, the light-sensing electrical signal is stored as a red light incidence signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED display panel with infrared recognition (first region/second region)
Materials described outside the worked examples.
GaN-based LED material (first GaN-based LED structures)
first red light sensing and emitting layer (InGaN, In 0.4-0.6)
InxGa(1-x)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–720 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
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US 12,431,096 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a schematic structural diagram illustrating a section of a second region in
FIG. 3 is a schematic structural diagram illustrating a section of a first region in
FIG. 4 is a schematic structural diagram illustrating a section of a first region according to a second embodiment of the present disclosure.
FIG. 5. To facilitate understanding of the present disclosure, all reference numerals appearing in the present disclosure are listed below. Display panel 1, …
FIG. 6 is a schematic structural diagram illustrating a section of a third region in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein the substrate has a plurality of first charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures in the second region is electrically connected to corre-sponding one of the plurality of first charge storage regions to store generated light-sensing charges; wherein a plurality of first transistors are provided on the substrate, a source region or a drain region of at least one of the plurality of first transistors is the first charge storage region; wherein a first metal interconnection sub-layer is provided between the substrate and the plurality of first GaN-based LED structures in the second region, and first metal interconnection structures of the first metal interconnection sub-layer are configured to be electrically connected to the plurality of first transistors; and wherein the plurality of first transistors form at least first light-sensing processing circuits, and the first light-sensing processing circuits sense a light-sensing elec-trical signal generated by the plurality of first GaN-based LED structures in the second region; when the light-sensing electrical signal sensed by the first light-sensing processing circuits from the plurality of first GaN-based LED structures in the second region is not greater than a fifth threshold, the light-sensing electri-cal signal is stored as an infrared light incidence signal.
The display panel of claim 1, wherein the first region further comprises a visible light imaging state, and in the visible light imaging state, the first GaN-based LED units in the first region are configured to sense visible light.
The display panel of claim 1, wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, each of the plurality of first GaN-based LED structures comprises a first red light sensing and emitting layer, a first green light sensing and emitting layer, a first blue light sensing and emitting layer, and an infrared light sensing and emitting layer stacked; materials of the first red light sensing and emitting layer, the first green light sensing and emitting layer, the first blue light sensing and emitting layer, and the infrared light sensing and emitting layer each comprises a GaN-based material containing Indium (In), with dif-ferent components of In from each other; when sensing light, light-sensing charges are generated or not generated according to different wavelengths of received light; when emitting light, different wave-lengths and brightness of light are generated based on a magnitude of applied voltage.
The display panel of claim 1, wherein first conductive plugs are provided in the first metal interconnection sublayer, a first end of each of the first conductive plugs is connected to corresponding one of the plurality of first GaN-based LED structures in the second region, and a second end of each of the first conductive plugs is electri-cally connected to corresponding one of the plurality of first charge storage regions.
The display panel of claim 1, wherein the plurality of first transistors at least further form first display driving circuits, input ends of the first display driving circuits are configured to receive a red display driving signal, a green display driving signal, and a blue display driving signal, output ends of the first display driving circuits are connected to the first metal interconnection structures, and the red display driving signal, the green display driving signal, and the blue display driving signal are transmitted via the first metal interconnection structures to the plurality of first GaN-based LED structures in the second region.
The display panel of claim 1, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sub-layer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electrically connected to the plurality of second transistors.
The display panel of claim 1, wherein the display region further comprises a third region, the third region comprises second GaN-based LED units arranged in an array, and the third region comprises a display state and a visible light recognition state, B₂ wherein in the display state, the second GaN-based LED units are configured to display a visible light screen, and in the visible light recognition state, some of the second GaN-based LED units are configured for illu-mination and the remainder of the second GaN-based LED units are configured for sensing visible light.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; and wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, the plurality of second transistors form at least infrared light emitting circuits, input ends of the infrared light emitting circuits are configured to receive an infrared emitting signal, output ends of the infrared light emit-ting circuits are connected to the second metal interconnection structures, and the infrared emitting signal is transmitted via the second metal interconnection structures to the plurality of first GaN-based LED structures in the first region.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; wherein the substrate has a plurality of second charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures B₂ in the first region is electrically connected to corre-sponding one of the plurality of second charge storage regions to store generated light-sensing charges; wherein the plurality of second transistors form at least second light-sensing processing circuits, and the sec-ond light-sensing processing circuits sense a light-sensing electrical signal generated by the plurality of first GaN-based LED structures in the first region; wherein when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a sixth threshold, the light-sensing electrical signal is stored as a blue light inci-dence signal; when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a seventh threshold and not greater than the sixth threshold, the light-sensing elec-trical signal is stored as a green light incidence signal; and when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than an eighth threshold and not greater than the seventh threshold, the light-sensing electrical signal is stored as a red light incidence signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED display panel with infrared recognition (first region/second region)
Materials described outside the worked examples.
GaN-based LED material (first GaN-based LED structures)
first red light sensing and emitting layer (InGaN, In 0.4-0.6)
InxGa(1-x)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–720 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
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US 12,431,096 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1.
FIG. 2 is a schematic structural diagram illustrating a section of a second region in
FIG. 3 is a schematic structural diagram illustrating a section of a first region in
FIG. 4 is a schematic structural diagram illustrating a section of a first region according to a second embodiment of the present disclosure.
FIG. 5. To facilitate understanding of the present disclosure, all reference numerals appearing in the present disclosure are listed below. Display panel 1, …
FIG. 6 is a schematic structural diagram illustrating a section of a third region in
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein the substrate has a plurality of first charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures in the second region is electrically connected to corre-sponding one of the plurality of first charge storage regions to store generated light-sensing charges; wherein a plurality of first transistors are provided on the substrate, a source region or a drain region of at least one of the plurality of first transistors is the first charge storage region; wherein a first metal interconnection sub-layer is provided between the substrate and the plurality of first GaN-based LED structures in the second region, and first metal interconnection structures of the first metal interconnection sub-layer are configured to be electrically connected to the plurality of first transistors; and wherein the plurality of first transistors form at least first light-sensing processing circuits, and the first light-sensing processing circuits sense a light-sensing elec-trical signal generated by the plurality of first GaN-based LED structures in the second region; when the light-sensing electrical signal sensed by the first light-sensing processing circuits from the plurality of first GaN-based LED structures in the second region is not greater than a fifth threshold, the light-sensing electri-cal signal is stored as an infrared light incidence signal.
The display panel of claim 1, wherein the first region further comprises a visible light imaging state, and in the visible light imaging state, the first GaN-based LED units in the first region are configured to sense visible light.
The display panel of claim 1, wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, each of the plurality of first GaN-based LED structures comprises a first red light sensing and emitting layer, a first green light sensing and emitting layer, a first blue light sensing and emitting layer, and an infrared light sensing and emitting layer stacked; materials of the first red light sensing and emitting layer, the first green light sensing and emitting layer, the first blue light sensing and emitting layer, and the infrared light sensing and emitting layer each comprises a GaN-based material containing Indium (In), with dif-ferent components of In from each other; when sensing light, light-sensing charges are generated or not generated according to different wavelengths of received light; when emitting light, different wave-lengths and brightness of light are generated based on a magnitude of applied voltage.
The display panel of claim 1, wherein first conductive plugs are provided in the first metal interconnection sublayer, a first end of each of the first conductive plugs is connected to corresponding one of the plurality of first GaN-based LED structures in the second region, and a second end of each of the first conductive plugs is electri-cally connected to corresponding one of the plurality of first charge storage regions.
The display panel of claim 1, wherein the plurality of first transistors at least further form first display driving circuits, input ends of the first display driving circuits are configured to receive a red display driving signal, a green display driving signal, and a blue display driving signal, output ends of the first display driving circuits are connected to the first metal interconnection structures, and the red display driving signal, the green display driving signal, and the blue display driving signal are transmitted via the first metal interconnection structures to the plurality of first GaN-based LED structures in the second region.
The display panel of claim 1, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sub-layer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electrically connected to the plurality of second transistors.
The display panel of claim 1, wherein the display region further comprises a third region, the third region comprises second GaN-based LED units arranged in an array, and the third region comprises a display state and a visible light recognition state, B₂ wherein in the display state, the second GaN-based LED units are configured to display a visible light screen, and in the visible light recognition state, some of the second GaN-based LED units are configured for illu-mination and the remainder of the second GaN-based LED units are configured for sensing visible light.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; and wherein each of the first GaN-based LED units comprises a plurality of first GaN-based LED structures, the plurality of second transistors form at least infrared light emitting circuits, input ends of the infrared light emitting circuits are configured to receive an infrared emitting signal, output ends of the infrared light emit-ting circuits are connected to the second metal interconnection structures, and the infrared emitting signal is transmitted via the second metal interconnection structures to the plurality of first GaN-based LED structures in the first region.
A display panel with gallium nitride-based light emit-ting diode units with display state and infrared recognition state, comprising a display region, wherein the display region comprises at least a first region and a second region, and the first region and the second region comprise first Gallium Nitride-based (GaN-based) light emitting diode (LED) units arranged in an array; wherein the first region and the second region comprise a display state and an infrared recognition state; in the display state, the first GaN-based LED units in the first region and the second region are configured to display a visible light screen; in the infrared recognition state, the first GaN-based LED units in the first region are configured for emitting infrared light, and the first GaN-based LED units in the second region are config-ured for sensing infrared light; wherein the display panel further comprises a substrate, wherein a plurality of second transistors are provided on the substrate, a second metal interconnection sublayer is provided between the substrate and the first GaN-based LED units in the first region, and second metal interconnection structures of the second metal interconnection sub-layer are configured to be electri-cally connected to the plurality of second transistors; wherein the substrate has a plurality of second charge storage regions, each of the first GaN-based LED units comprises a plurality of first GaN-based LED struc-tures, and each of the first GaN-based LED structures B₂ in the first region is electrically connected to corre-sponding one of the plurality of second charge storage regions to store generated light-sensing charges; wherein the plurality of second transistors form at least second light-sensing processing circuits, and the sec-ond light-sensing processing circuits sense a light-sensing electrical signal generated by the plurality of first GaN-based LED structures in the first region; wherein when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a sixth threshold, the light-sensing electrical signal is stored as a blue light inci-dence signal; when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than a seventh threshold and not greater than the sixth threshold, the light-sensing elec-trical signal is stored as a green light incidence signal; and when the light-sensing electrical signal sensed by the second light-sensing processing circuits from the plu-rality of first GaN-based LED structures in the first region is greater than an eighth threshold and not greater than the seventh threshold, the light-sensing electrical signal is stored as a red light incidence signal. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based LED display panel with infrared recognition (first region/second region)
Materials described outside the worked examples.
GaN-based LED material (first GaN-based LED structures)
first red light sensing and emitting layer (InGaN, In 0.4-0.6)
InxGa(1-x)N
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–720 nm | — |
Thickness |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 15
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