Patent
US 7,893,449Gallium nitride based compound semiconductor light-emitting device with transparent conductive oxide film having graded dopant concentration
Naoki Fukunaga
US
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US 7,893,449Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are respectively a cross-sectional view and a plan view schematically illustrating the gallium nitride based compound semiconductor …
FIG. 3 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 4. The Sn concentration was defined by the ratio (at%) of metal atoms (In + Sn + Ga + Al) that was considered to exist in the vicinity of the interface. …
FIG. 5), thereby manufacturing a bomb-shaped lamp 130. [0050] The gallium nitride based compound semiconductor light-emitting device 25 according to this …
FIG. 6. For example, a pattern in which the convex portions have different sizes or a pattern in which the convex portions are arranged at irregular intervals …
FIG. 8 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 9, the gallium nitride based compound semiconductor light-emitting device according to this embodiment may be used to form an 15 LED lamp by any known …
FIG. 25 9), thereby manufacturing a bomb-shaped lamp 230. [0108] The gallium nitride based compound semiconductor light-emitting device according to this …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A gallium nitride based compound semiconductor light- emitting device including: a gallium nitride based compound semiconductor device including a p-type semiconductor layer; and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer, wherein a dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than a bulk dopant concentration of the transparent conductive oxide film, and wherein the dopant concentration of the transparent conductive oxide film is 15 at % or more in the region that is 2 nm or less away from the interface and the dopant concentration is 5 to 10 at % in the region that is 2 nm or more away from the interface.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein an uneven surface is formed on at least a portion of the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the dopant concentration of the transparent conductive oxide film is the highest at the interface between the transparent conductive oxide film and the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein a highly doped region having a dopant concentration that is higher than that of the transparent conductive oxide film is provided between the p-type semiconductor layer and the transparent conductive oxide film.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the transparent conductive oxide film is formed of at least one of ITO(In₂₀₃- SnO₂), AZO(ZnO-A l 203), IZO(In₂₀ 3-ZnO), and GZO(ZnO-GeO₂).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₉₂₂₀₇ Appln. No.: 12/097,054 wherein the thickness of the transparent conductive oxide film is in the range of 35 nm to 10000 nm (10 p m).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the thickness of the transparent conductive oxide film is in the range of 100 nm to 1000 nm (1 p m).
: A lamp including the gallium nitride based compound semiconductor light-emitting device according to claim 1.
-9.
-26.
-36.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting device
Materials described outside the worked examples.
p-type GaN-based semiconductor layer
transparent conductive oxide film
highly doped region
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant concentration at TCO/p-GaN interface (≤2 nm from interface) | ≥ 15 at% | transparent conductive oxide film |
Dopant concentration in bulk TCO (≥2 nm from interface) | 5–10 at% |
Table 1
2 o c 2 v, 2 c 2 C) oo
lar to Experimental example 1, except that the annealing process was 15 performed at the temperature shown in Table 1.
p. 16
Table 2
g.2 00 N 9 '.2 o "f N
ar to Experimental example 21, except that the annealing process was 10 performed at the temperature shown in Table 2.
p. 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,893,449Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are respectively a cross-sectional view and a plan view schematically illustrating the gallium nitride based compound semiconductor …
FIG. 3 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 4. The Sn concentration was defined by the ratio (at%) of metal atoms (In + Sn + Ga + Al) that was considered to exist in the vicinity of the interface. …
FIG. 5), thereby manufacturing a bomb-shaped lamp 130. [0050] The gallium nitride based compound semiconductor light-emitting device 25 according to this …
FIG. 6. For example, a pattern in which the convex portions have different sizes or a pattern in which the convex portions are arranged at irregular intervals …
FIG. 8 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 9, the gallium nitride based compound semiconductor light-emitting device according to this embodiment may be used to form an 15 LED lamp by any known …
FIG. 25 9), thereby manufacturing a bomb-shaped lamp 230. [0108] The gallium nitride based compound semiconductor light-emitting device according to this …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A gallium nitride based compound semiconductor light- emitting device including: a gallium nitride based compound semiconductor device including a p-type semiconductor layer; and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer, wherein a dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than a bulk dopant concentration of the transparent conductive oxide film, and wherein the dopant concentration of the transparent conductive oxide film is 15 at % or more in the region that is 2 nm or less away from the interface and the dopant concentration is 5 to 10 at % in the region that is 2 nm or more away from the interface.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein an uneven surface is formed on at least a portion of the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the dopant concentration of the transparent conductive oxide film is the highest at the interface between the transparent conductive oxide film and the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein a highly doped region having a dopant concentration that is higher than that of the transparent conductive oxide film is provided between the p-type semiconductor layer and the transparent conductive oxide film.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the transparent conductive oxide film is formed of at least one of ITO(In₂₀₃- SnO₂), AZO(ZnO-A l 203), IZO(In₂₀ 3-ZnO), and GZO(ZnO-GeO₂).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₉₂₂₀₇ Appln. No.: 12/097,054 wherein the thickness of the transparent conductive oxide film is in the range of 35 nm to 10000 nm (10 p m).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the thickness of the transparent conductive oxide film is in the range of 100 nm to 1000 nm (1 p m).
: A lamp including the gallium nitride based compound semiconductor light-emitting device according to claim 1.
-9.
-26.
-36.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting device
Materials described outside the worked examples.
p-type GaN-based semiconductor layer
transparent conductive oxide film
highly doped region
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant concentration at TCO/p-GaN interface (≤2 nm from interface) | ≥ 15 at% | transparent conductive oxide film |
Dopant concentration in bulk TCO (≥2 nm from interface) | 5–10 at% |
Table 1
2 o c 2 v, 2 c 2 C) oo
lar to Experimental example 1, except that the annealing process was 15 performed at the temperature shown in Table 1.
p. 16
Table 2
g.2 00 N 9 '.2 o "f N
ar to Experimental example 21, except that the annealing process was 10 performed at the temperature shown in Table 2.
p. 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,893,449Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are respectively a cross-sectional view and a plan view schematically illustrating the gallium nitride based compound semiconductor …
FIG. 3 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 4. The Sn concentration was defined by the ratio (at%) of metal atoms (In + Sn + Ga + Al) that was considered to exist in the vicinity of the interface. …
FIG. 5), thereby manufacturing a bomb-shaped lamp 130. [0050] The gallium nitride based compound semiconductor light-emitting device 25 according to this …
FIG. 6. For example, a pattern in which the convex portions have different sizes or a pattern in which the convex portions are arranged at irregular intervals …
FIG. 8 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 9, the gallium nitride based compound semiconductor light-emitting device according to this embodiment may be used to form an 15 LED lamp by any known …
FIG. 25 9), thereby manufacturing a bomb-shaped lamp 230. [0108] The gallium nitride based compound semiconductor light-emitting device according to this …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A gallium nitride based compound semiconductor light- emitting device including: a gallium nitride based compound semiconductor device including a p-type semiconductor layer; and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer, wherein a dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than a bulk dopant concentration of the transparent conductive oxide film, and wherein the dopant concentration of the transparent conductive oxide film is 15 at % or more in the region that is 2 nm or less away from the interface and the dopant concentration is 5 to 10 at % in the region that is 2 nm or more away from the interface.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein an uneven surface is formed on at least a portion of the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the dopant concentration of the transparent conductive oxide film is the highest at the interface between the transparent conductive oxide film and the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein a highly doped region having a dopant concentration that is higher than that of the transparent conductive oxide film is provided between the p-type semiconductor layer and the transparent conductive oxide film.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the transparent conductive oxide film is formed of at least one of ITO(In₂₀₃- SnO₂), AZO(ZnO-A l 203), IZO(In₂₀ 3-ZnO), and GZO(ZnO-GeO₂).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₉₂₂₀₇ Appln. No.: 12/097,054 wherein the thickness of the transparent conductive oxide film is in the range of 35 nm to 10000 nm (10 p m).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the thickness of the transparent conductive oxide film is in the range of 100 nm to 1000 nm (1 p m).
: A lamp including the gallium nitride based compound semiconductor light-emitting device according to claim 1.
-9.
-26.
-36.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting device
Materials described outside the worked examples.
p-type GaN-based semiconductor layer
transparent conductive oxide film
highly doped region
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant concentration at TCO/p-GaN interface (≤2 nm from interface) | ≥ 15 at% | transparent conductive oxide film |
Dopant concentration in bulk TCO (≥2 nm from interface) | 5–10 at% |
Table 1
2 o c 2 v, 2 c 2 C) oo
lar to Experimental example 1, except that the annealing process was 15 performed at the temperature shown in Table 1.
p. 16
Table 2
g.2 00 N 9 '.2 o "f N
ar to Experimental example 21, except that the annealing process was 10 performed at the temperature shown in Table 2.
p. 27
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 7,893,449Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 1 and 2 are respectively a cross-sectional view and a plan view schematically illustrating the gallium nitride based compound semiconductor …
FIG. 3 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 4. The Sn concentration was defined by the ratio (at%) of metal atoms (In + Sn + Ga + Al) that was considered to exist in the vicinity of the interface. …
FIG. 5), thereby manufacturing a bomb-shaped lamp 130. [0050] The gallium nitride based compound semiconductor light-emitting device 25 according to this …
FIG. 6. For example, a pattern in which the convex portions have different sizes or a pattern in which the convex portions are arranged at irregular intervals …
FIG. 8 is a cross-sectional view schematically illustrating an epitaxial structure used for the gallium nitride based compound semiconductor light-emitting …
FIG. 9, the gallium nitride based compound semiconductor light-emitting device according to this embodiment may be used to form an 15 LED lamp by any known …
FIG. 25 9), thereby manufacturing a bomb-shaped lamp 230. [0108] The gallium nitride based compound semiconductor light-emitting device according to this …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
: A gallium nitride based compound semiconductor light- emitting device including: a gallium nitride based compound semiconductor device including a p-type semiconductor layer; and a transparent conductive oxide film that includes dopants and is formed on the p-type semiconductor layer, wherein a dopant concentration at an interface between the p-type semiconductor layer and the transparent conductive oxide film is higher than a bulk dopant concentration of the transparent conductive oxide film, and wherein the dopant concentration of the transparent conductive oxide film is 15 at % or more in the region that is 2 nm or less away from the interface and the dopant concentration is 5 to 10 at % in the region that is 2 nm or more away from the interface.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein an uneven surface is formed on at least a portion of the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the dopant concentration of the transparent conductive oxide film is the highest at the interface between the transparent conductive oxide film and the p-type semiconductor layer.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein a highly doped region having a dopant concentration that is higher than that of the transparent conductive oxide film is provided between the p-type semiconductor layer and the transparent conductive oxide film.
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the transparent conductive oxide film is formed of at least one of ITO(In₂₀₃- SnO₂), AZO(ZnO-A l 203), IZO(In₂₀ 3-ZnO), and GZO(ZnO-GeO₂).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, 4 AMENDMENT UNDER 37 C.F.R. § 1.111 Attorney Docket No.: Q₉₂₂₀₇ Appln. No.: 12/097,054 wherein the thickness of the transparent conductive oxide film is in the range of 35 nm to 10000 nm (10 p m).
: The gallium nitride based compound semiconductor light-emitting device according to claim 1, wherein the thickness of the transparent conductive oxide film is in the range of 100 nm to 1000 nm (1 p m).
: A lamp including the gallium nitride based compound semiconductor light-emitting device according to claim 1.
-9.
-26.
-36.
Layer stacks claimed or described, ordered top of device to substrate.
gallium nitride based compound semiconductor light-emitting device
Materials described outside the worked examples.
p-type GaN-based semiconductor layer
transparent conductive oxide film
highly doped region
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Dopant concentration at TCO/p-GaN interface (≤2 nm from interface) | ≥ 15 at% | transparent conductive oxide film |
Dopant concentration in bulk TCO (≥2 nm from interface) | 5–10 at% |
Table 1
2 o c 2 v, 2 c 2 C) oo
lar to Experimental example 1, except that the annealing process was 15 performed at the temperature shown in Table 1.
p. 16
Table 2
g.2 00 N 9 '.2 o "f N
ar to Experimental example 21, except that the annealing process was 10 performed at the temperature shown in Table 2.
p. 27
Related documents with shared materials, methods, properties, or citations.
Sn
SnO₂
ITO (high Sn concentration)
In₂O₃-SnO₂
AZO
ZnO-Al₂O₃
IZO
In₂O₃-ZnO
GZO
ZnO-GeO₂
transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 12 range) | 35–10000 nm | transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 13 preferred range) | 100–1000 nm | transparent conductive oxide film |
Thickness | 0.02–2 nm | — |
Sn
SnO₂
ITO (high Sn concentration)
In₂O₃-SnO₂
AZO
ZnO-Al₂O₃
IZO
In₂O₃-ZnO
GZO
ZnO-GeO₂
transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 12 range) | 35–10000 nm | transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 13 preferred range) | 100–1000 nm | transparent conductive oxide film |
Thickness | 0.02–2 nm | — |
Sn
SnO₂
ITO (high Sn concentration)
In₂O₃-SnO₂
AZO
ZnO-Al₂O₃
IZO
In₂O₃-ZnO
GZO
ZnO-GeO₂
transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 12 range) | 35–10000 nm | transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 13 preferred range) | 100–1000 nm | transparent conductive oxide film |
Thickness | 0.02–2 nm | — |
Sn
SnO₂
ITO (high Sn concentration)
In₂O₃-SnO₂
AZO
ZnO-Al₂O₃
IZO
In₂O₃-ZnO
GZO
ZnO-GeO₂
transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 12 range) | 35–10000 nm | transparent conductive oxide film |
Transparent conductive oxide film thickness (claim 13 preferred range) | 100–1000 nm | transparent conductive oxide film |
Thickness | 0.02–2 nm | — |