Patent
US 9,379,285LIGHT EMITTING DEVICE
Tae Yun KIM
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
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US 9,379,285Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the light emitting diode according to the first embodiment includes the first and second Un- G aN layers 31 and 33 and the first and second N- type Ga N …
FIG. 2 is a view used to explain a light emitting diode according to the second embodiment. DETAILED DESC RIPT ION OF THE INVENTION [001 51 I n the description …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer- layer. wherein the first-n-ype-semiconductor layer has- a-Si-impurity-concentration-different from that of the second n-type semiconductor layer.
The light emitting device according to claim 1, further comprising a third undoped GaN layer on the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor la y er has a Si impurity concentration different from that of the second n- type semiconductor la y er, and wherein the Si concentration of the first n-type semiconductor layer is greater than that of the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 1, further comprising a first electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 1, wherein the ohmic electrode layer is directly disposed on the p-type semiconductor layer.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; and a second first electrode on the p-type semiconductor layer, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 11, further comprising an ohmic electrode layer on the p-type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CDW/jsn Application No.: 14/643,777 Docket No.: 3449-0954PUS₅ Reply to Office Action of Page 5 of 8
The light emitting device according to claim 11, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 11, further comprising a first second electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 11, further comprising a third undoped GaN layer on second n-type semiconductor layer.
The light emitting device according to claim 11, wherein a Si concentration of the first n-type semiconductor layer is different from that of the second n-type semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (claim 1)
Materials described outside the worked examples.
undoped GaN
GaN
Si-doped n-type nitride semiconductor
p-type semiconductor layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,379,285Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the light emitting diode according to the first embodiment includes the first and second Un- G aN layers 31 and 33 and the first and second N- type Ga N …
FIG. 2 is a view used to explain a light emitting diode according to the second embodiment. DETAILED DESC RIPT ION OF THE INVENTION [001 51 I n the description …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer- layer. wherein the first-n-ype-semiconductor layer has- a-Si-impurity-concentration-different from that of the second n-type semiconductor layer.
The light emitting device according to claim 1, further comprising a third undoped GaN layer on the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor la y er has a Si impurity concentration different from that of the second n- type semiconductor la y er, and wherein the Si concentration of the first n-type semiconductor layer is greater than that of the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 1, further comprising a first electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 1, wherein the ohmic electrode layer is directly disposed on the p-type semiconductor layer.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; and a second first electrode on the p-type semiconductor layer, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 11, further comprising an ohmic electrode layer on the p-type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CDW/jsn Application No.: 14/643,777 Docket No.: 3449-0954PUS₅ Reply to Office Action of Page 5 of 8
The light emitting device according to claim 11, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 11, further comprising a first second electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 11, further comprising a third undoped GaN layer on second n-type semiconductor layer.
The light emitting device according to claim 11, wherein a Si concentration of the first n-type semiconductor layer is different from that of the second n-type semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (claim 1)
Materials described outside the worked examples.
undoped GaN
GaN
Si-doped n-type nitride semiconductor
p-type semiconductor layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,379,285Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the light emitting diode according to the first embodiment includes the first and second Un- G aN layers 31 and 33 and the first and second N- type Ga N …
FIG. 2 is a view used to explain a light emitting diode according to the second embodiment. DETAILED DESC RIPT ION OF THE INVENTION [001 51 I n the description …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer- layer. wherein the first-n-ype-semiconductor layer has- a-Si-impurity-concentration-different from that of the second n-type semiconductor layer.
The light emitting device according to claim 1, further comprising a third undoped GaN layer on the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor la y er has a Si impurity concentration different from that of the second n- type semiconductor la y er, and wherein the Si concentration of the first n-type semiconductor layer is greater than that of the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 1, further comprising a first electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 1, wherein the ohmic electrode layer is directly disposed on the p-type semiconductor layer.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; and a second first electrode on the p-type semiconductor layer, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 11, further comprising an ohmic electrode layer on the p-type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CDW/jsn Application No.: 14/643,777 Docket No.: 3449-0954PUS₅ Reply to Office Action of Page 5 of 8
The light emitting device according to claim 11, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 11, further comprising a first second electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 11, further comprising a third undoped GaN layer on second n-type semiconductor layer.
The light emitting device according to claim 11, wherein a Si concentration of the first n-type semiconductor layer is different from that of the second n-type semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (claim 1)
Materials described outside the worked examples.
undoped GaN
GaN
Si-doped n-type nitride semiconductor
p-type semiconductor layer
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,379,285Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1, the light emitting diode according to the first embodiment includes the first and second Un- G aN layers 31 and 33 and the first and second N- type Ga N …
FIG. 2 is a view used to explain a light emitting diode according to the second embodiment. DETAILED DESC RIPT ION OF THE INVENTION [001 51 I n the description …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; an ohmic electrode layer on the p-type semiconductor layer; and a second electrode on the p-type semiconductor layer- layer. wherein the first-n-ype-semiconductor layer has- a-Si-impurity-concentration-different from that of the second n-type semiconductor layer.
The light emitting device according to claim 1, further comprising a third undoped GaN layer on the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor la y er has a Si impurity concentration different from that of the second n- type semiconductor la y er, and wherein the Si concentration of the first n-type semiconductor layer is greater than that of the second n-type semiconductor layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 1, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 1, further comprising a first electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 1, wherein the ohmic electrode layer is directly disposed on the p-type semiconductor layer.
A light emitting device comprising: a substrate; a first undoped GaN layer on the substrate; a first n-type semiconductor layer on the first undoped GaN layer; a second undoped GaN layer on the first n-type semiconductor layer; a second n-type semiconductor layer on the second undoped GaN layer; an active layer on the second n-type semiconductor layer; a p-type semiconductor layer on the active layer; and a second first electrode on the p-type semiconductor layer, wherein the first n-type semiconductor layer is thicker than the first undoped GaN layer.
The light emitting device according to claim 11, further comprising an ohmic electrode layer on the p-type semiconductor layer. BIRCH, STEWART, KOLASCH & BIRCH, LLP JTE/CDW/jsn Application No.: 14/643,777 Docket No.: 3449-0954PUS₅ Reply to Office Action of Page 5 of 8
The light emitting device according to claim 11, wherein the first n-type semiconductor layer is thicker than the second undoped GaN layer.
The light emitting device according to claim 11, further comprising a first second electrode on a first portion of the first n-type semiconductor layer.
The light emitting device according to claim 11, further comprising a third undoped GaN layer on second n-type semiconductor layer.
The light emitting device according to claim 11, wherein a Si concentration of the first n-type semiconductor layer is different from that of the second n-type semiconductor layer.
Layer stacks claimed or described, ordered top of device to substrate.
light emitting device (claim 1)
Materials described outside the worked examples.
undoped GaN
GaN
Si-doped n-type nitride semiconductor
p-type semiconductor layer
Related documents with shared materials, methods, properties, or citations.
light emitting device (claim 11)
active layer
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
light emitting device (claim 11)
active layer
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
light emitting device (claim 11)
active layer
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)
light emitting device (claim 11)
active layer
THREE-DIMENSIONAL GALLIUM NITRIDE (GAN) PILLAR STRUCTURE LIGHT EMITTING DIODE (LED)