Patent
Atlas literature
Patent
US 8,860,070Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical GaN-based light emitting diode, comprising: a substrate; a first-doping type ohmic electrode layer arranged on the substrate; a first-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type ohmic electrode layer; a second-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type GaN-based I ll -V group semiconductor layer; and a second-doping type ohmic electrode layer arranged on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and the second-doping type GaN-based I ll -V group semiconductor layer comprises photonic crystals arranged on an outer surface thereof at a pitch of about 2 u m and a portion of the outer surface between the photonic crystals rou g hened b y photochemical etchin g surface roughness on a surface thereof.
The vertical GaN-based light emitting diode of claim 1, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The vertical GaN-based light emitting diode of claim 1, wherein the photonic crystals each comprise repeatedly formed pores or protrusionsrcpc a tcdly formed at a pitch of 100 ~ 100,000 nm.
The vertical GaN-based light emitting diode of claim 1, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The vertical GaN-based light emitting diode of claim 1, wherein the electroluminescent intensity thereof at an output wavelen g th of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are arranged at a pitch of about 2 pm.
The vertical GaN-based light emitting diode of claim 1, wherein the first-doping type comprises a p-type and the second-doping type comprises an n- type.
A method of manufacturing a vertical GaN-based light emitting diode, the method comprising: forming a first-doping type ohmic electrode layer on a substrate; forming a first-doping type GaN-based I ll -V group semiconductor layer on the first- doping type ohmic electrode layer; forming a second-doping type GaN-based I ll -V group semiconductor layer on the first- doping type GaN-based I ll -V group semiconductor layer; and forming a second-doping type ohmic electrode layer on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and [[a]]an outer surface of the second-doping type GaN-based I ll -V group semiconductor layer is subjected to a process of forming photonic crystals at a pitch of about 2p m, and a p ortion of the outer surface between the photonic crystals is sub j ected to a process of surface roughening using p hotochemical etching. 3 SVG 13512269.04-07-2014.HTQA₁WPEPXXIFW3.CLM16003745.1.1738.158.2247.245.svg 0.29 1.697 Chemistry Black and white
The method of claim 7, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The method of claim 7, wherein forming the first-doping type ohmic electrode layer comprises a heat treatment under an oxygen atmosphere to obtain low contact resistance.
The method of claim 7, wherein the process of forming the photonic crystals comprises forming pores or protrusions at a pitch of 100 ~ 100,000 nm on the outer surface of the second-doping type GaN-based I ll -V group semiconductor layer.
The method of claim 7, wherein the process of forming the photonic crystals comprises photolithography-based patterning and dry etching.
The method of claim 7, wherein the process of surface roughening is performed using a strong basic solution.
The method of claim 7, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The method of claim 7, wherein the electroluminescent intensity of the vertical GaN-based light emitting diode at an output wavelength of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are formed at a pitch of about 2 pm.
The method of claim 7, wherein the first-doping type comprises a p-type and the second-doping type comprises an n-type.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based light emitting diode
Materials described outside the worked examples.
first-doping type GaN-based III-V group semiconductor
second-doping type GaN-based III-V group semiconductor
second-doping type ohmic electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electroluminescent intensity at ~460 nm output wavelength | 5500000–6000000 | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,860,070Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical GaN-based light emitting diode, comprising: a substrate; a first-doping type ohmic electrode layer arranged on the substrate; a first-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type ohmic electrode layer; a second-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type GaN-based I ll -V group semiconductor layer; and a second-doping type ohmic electrode layer arranged on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and the second-doping type GaN-based I ll -V group semiconductor layer comprises photonic crystals arranged on an outer surface thereof at a pitch of about 2 u m and a portion of the outer surface between the photonic crystals rou g hened b y photochemical etchin g surface roughness on a surface thereof.
The vertical GaN-based light emitting diode of claim 1, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The vertical GaN-based light emitting diode of claim 1, wherein the photonic crystals each comprise repeatedly formed pores or protrusionsrcpc a tcdly formed at a pitch of 100 ~ 100,000 nm.
The vertical GaN-based light emitting diode of claim 1, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The vertical GaN-based light emitting diode of claim 1, wherein the electroluminescent intensity thereof at an output wavelen g th of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are arranged at a pitch of about 2 pm.
The vertical GaN-based light emitting diode of claim 1, wherein the first-doping type comprises a p-type and the second-doping type comprises an n- type.
A method of manufacturing a vertical GaN-based light emitting diode, the method comprising: forming a first-doping type ohmic electrode layer on a substrate; forming a first-doping type GaN-based I ll -V group semiconductor layer on the first- doping type ohmic electrode layer; forming a second-doping type GaN-based I ll -V group semiconductor layer on the first- doping type GaN-based I ll -V group semiconductor layer; and forming a second-doping type ohmic electrode layer on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and [[a]]an outer surface of the second-doping type GaN-based I ll -V group semiconductor layer is subjected to a process of forming photonic crystals at a pitch of about 2p m, and a p ortion of the outer surface between the photonic crystals is sub j ected to a process of surface roughening using p hotochemical etching. 3 SVG 13512269.04-07-2014.HTQA₁WPEPXXIFW3.CLM16003745.1.1738.158.2247.245.svg 0.29 1.697 Chemistry Black and white
The method of claim 7, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The method of claim 7, wherein forming the first-doping type ohmic electrode layer comprises a heat treatment under an oxygen atmosphere to obtain low contact resistance.
The method of claim 7, wherein the process of forming the photonic crystals comprises forming pores or protrusions at a pitch of 100 ~ 100,000 nm on the outer surface of the second-doping type GaN-based I ll -V group semiconductor layer.
The method of claim 7, wherein the process of forming the photonic crystals comprises photolithography-based patterning and dry etching.
The method of claim 7, wherein the process of surface roughening is performed using a strong basic solution.
The method of claim 7, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The method of claim 7, wherein the electroluminescent intensity of the vertical GaN-based light emitting diode at an output wavelength of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are formed at a pitch of about 2 pm.
The method of claim 7, wherein the first-doping type comprises a p-type and the second-doping type comprises an n-type.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based light emitting diode
Materials described outside the worked examples.
first-doping type GaN-based III-V group semiconductor
second-doping type GaN-based III-V group semiconductor
second-doping type ohmic electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electroluminescent intensity at ~460 nm output wavelength | 5500000–6000000 | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,860,070Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical GaN-based light emitting diode, comprising: a substrate; a first-doping type ohmic electrode layer arranged on the substrate; a first-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type ohmic electrode layer; a second-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type GaN-based I ll -V group semiconductor layer; and a second-doping type ohmic electrode layer arranged on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and the second-doping type GaN-based I ll -V group semiconductor layer comprises photonic crystals arranged on an outer surface thereof at a pitch of about 2 u m and a portion of the outer surface between the photonic crystals rou g hened b y photochemical etchin g surface roughness on a surface thereof.
The vertical GaN-based light emitting diode of claim 1, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The vertical GaN-based light emitting diode of claim 1, wherein the photonic crystals each comprise repeatedly formed pores or protrusionsrcpc a tcdly formed at a pitch of 100 ~ 100,000 nm.
The vertical GaN-based light emitting diode of claim 1, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The vertical GaN-based light emitting diode of claim 1, wherein the electroluminescent intensity thereof at an output wavelen g th of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are arranged at a pitch of about 2 pm.
The vertical GaN-based light emitting diode of claim 1, wherein the first-doping type comprises a p-type and the second-doping type comprises an n- type.
A method of manufacturing a vertical GaN-based light emitting diode, the method comprising: forming a first-doping type ohmic electrode layer on a substrate; forming a first-doping type GaN-based I ll -V group semiconductor layer on the first- doping type ohmic electrode layer; forming a second-doping type GaN-based I ll -V group semiconductor layer on the first- doping type GaN-based I ll -V group semiconductor layer; and forming a second-doping type ohmic electrode layer on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and [[a]]an outer surface of the second-doping type GaN-based I ll -V group semiconductor layer is subjected to a process of forming photonic crystals at a pitch of about 2p m, and a p ortion of the outer surface between the photonic crystals is sub j ected to a process of surface roughening using p hotochemical etching. 3 SVG 13512269.04-07-2014.HTQA₁WPEPXXIFW3.CLM16003745.1.1738.158.2247.245.svg 0.29 1.697 Chemistry Black and white
The method of claim 7, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The method of claim 7, wherein forming the first-doping type ohmic electrode layer comprises a heat treatment under an oxygen atmosphere to obtain low contact resistance.
The method of claim 7, wherein the process of forming the photonic crystals comprises forming pores or protrusions at a pitch of 100 ~ 100,000 nm on the outer surface of the second-doping type GaN-based I ll -V group semiconductor layer.
The method of claim 7, wherein the process of forming the photonic crystals comprises photolithography-based patterning and dry etching.
The method of claim 7, wherein the process of surface roughening is performed using a strong basic solution.
The method of claim 7, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The method of claim 7, wherein the electroluminescent intensity of the vertical GaN-based light emitting diode at an output wavelength of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are formed at a pitch of about 2 pm.
The method of claim 7, wherein the first-doping type comprises a p-type and the second-doping type comprises an n-type.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based light emitting diode
Materials described outside the worked examples.
first-doping type GaN-based III-V group semiconductor
second-doping type GaN-based III-V group semiconductor
second-doping type ohmic electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electroluminescent intensity at ~460 nm output wavelength | 5500000–6000000 | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,860,070Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A vertical GaN-based light emitting diode, comprising: a substrate; a first-doping type ohmic electrode layer arranged on the substrate; a first-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type ohmic electrode layer; a second-doping type GaN-based I ll -V group semiconductor layer arranged on the first- doping type GaN-based I ll -V group semiconductor layer; and a second-doping type ohmic electrode layer arranged on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and the second-doping type GaN-based I ll -V group semiconductor layer comprises photonic crystals arranged on an outer surface thereof at a pitch of about 2 u m and a portion of the outer surface between the photonic crystals rou g hened b y photochemical etchin g surface roughness on a surface thereof.
The vertical GaN-based light emitting diode of claim 1, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The vertical GaN-based light emitting diode of claim 1, wherein the photonic crystals each comprise repeatedly formed pores or protrusionsrcpc a tcdly formed at a pitch of 100 ~ 100,000 nm.
The vertical GaN-based light emitting diode of claim 1, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The vertical GaN-based light emitting diode of claim 1, wherein the electroluminescent intensity thereof at an output wavelen g th of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are arranged at a pitch of about 2 pm.
The vertical GaN-based light emitting diode of claim 1, wherein the first-doping type comprises a p-type and the second-doping type comprises an n- type.
A method of manufacturing a vertical GaN-based light emitting diode, the method comprising: forming a first-doping type ohmic electrode layer on a substrate; forming a first-doping type GaN-based I ll -V group semiconductor layer on the first- doping type ohmic electrode layer; forming a second-doping type GaN-based I ll -V group semiconductor layer on the first- doping type GaN-based I ll -V group semiconductor layer; and forming a second-doping type ohmic electrode layer on the second-doping type GaN- based I ll -V group semiconductor layer, wherein the first-doping type ohmic electrode layer comprises an Ag-based electrode, and [[a]]an outer surface of the second-doping type GaN-based I ll -V group semiconductor layer is subjected to a process of forming photonic crystals at a pitch of about 2p m, and a p ortion of the outer surface between the photonic crystals is sub j ected to a process of surface roughening using p hotochemical etching. 3 SVG 13512269.04-07-2014.HTQA₁WPEPXXIFW3.CLM16003745.1.1738.158.2247.245.svg 0.29 1.697 Chemistry Black and white
The method of claim 7, wherein the Ag-based electrode comprises Ag or an Ag alloy.
The method of claim 7, wherein forming the first-doping type ohmic electrode layer comprises a heat treatment under an oxygen atmosphere to obtain low contact resistance.
The method of claim 7, wherein the process of forming the photonic crystals comprises forming pores or protrusions at a pitch of 100 ~ 100,000 nm on the outer surface of the second-doping type GaN-based I ll -V group semiconductor layer.
The method of claim 7, wherein the process of forming the photonic crystals comprises photolithography-based patterning and dry etching.
The method of claim 7, wherein the process of surface roughening is performed using a strong basic solution.
The method of claim 7, wherein the second-doping type ohmic electrode layer comprises Ti, Ta, A l, Cr, or Au.
The method of claim 7, wherein the electroluminescent intensity of the vertical GaN-based light emitting diode at an output wavelength of about 460nm is in a ran g e of 55 to 60 x 1 04 counts/sphotonic crystals are formed at a pitch of about 2 pm.
The method of claim 7, wherein the first-doping type comprises a p-type and the second-doping type comprises an n-type.
Layer stacks claimed or described, ordered top of device to substrate.
vertical GaN-based light emitting diode
Materials described outside the worked examples.
first-doping type GaN-based III-V group semiconductor
second-doping type GaN-based III-V group semiconductor
second-doping type ohmic electrode
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
electroluminescent intensity at ~460 nm output wavelength | 5500000–6000000 | — |
Related documents with shared materials, methods, properties, or citations.
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