Patent
US 8,553,740METHOD OF DRIVING GaN-BASED SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD
Ippei Nishinaka
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,553,740Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, further comprising decreasing the light emission luminance immediately after the light emission luminance value becomes a maximum value.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the well layer is formed of an InGaN-based compound semiconductor layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the time from the start of the injection of the carrier to the stoppage of the injection of the carrier is less than 10 nanoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 10 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 100 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 300 A/cm2 or more when being converted into a current amount per 1 cm 2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein a light emitting wavelength is equal to or more than 500 nm and equal to or less than 570 nm.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 1 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 0.5 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is about 2 picoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about ten times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about twenty times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about 10 nanoseconds.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 2 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first 3 App l e. No. 12/709,828 Reply to Non-Final Office Action of conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound 4 App l e. No. 12/709,828 Reply to Non-Final Office Action of semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device f r om a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a light emitting device including a GaN-based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a 5 App l e. No. 12/709,828 Reply to Non-Final Office Action of wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 6 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
first GaN-based compound semiconductor layer
active layer with well layer
second GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–525 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,553,740Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, further comprising decreasing the light emission luminance immediately after the light emission luminance value becomes a maximum value.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the well layer is formed of an InGaN-based compound semiconductor layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the time from the start of the injection of the carrier to the stoppage of the injection of the carrier is less than 10 nanoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 10 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 100 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 300 A/cm2 or more when being converted into a current amount per 1 cm 2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein a light emitting wavelength is equal to or more than 500 nm and equal to or less than 570 nm.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 1 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 0.5 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is about 2 picoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about ten times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about twenty times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about 10 nanoseconds.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 2 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first 3 App l e. No. 12/709,828 Reply to Non-Final Office Action of conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound 4 App l e. No. 12/709,828 Reply to Non-Final Office Action of semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device f r om a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a light emitting device including a GaN-based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a 5 App l e. No. 12/709,828 Reply to Non-Final Office Action of wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 6 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
first GaN-based compound semiconductor layer
active layer with well layer
second GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–525 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,553,740Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, further comprising decreasing the light emission luminance immediately after the light emission luminance value becomes a maximum value.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the well layer is formed of an InGaN-based compound semiconductor layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the time from the start of the injection of the carrier to the stoppage of the injection of the carrier is less than 10 nanoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 10 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 100 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 300 A/cm2 or more when being converted into a current amount per 1 cm 2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein a light emitting wavelength is equal to or more than 500 nm and equal to or less than 570 nm.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 1 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 0.5 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is about 2 picoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about ten times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about twenty times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about 10 nanoseconds.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 2 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first 3 App l e. No. 12/709,828 Reply to Non-Final Office Action of conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound 4 App l e. No. 12/709,828 Reply to Non-Final Office Action of semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device f r om a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a light emitting device including a GaN-based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a 5 App l e. No. 12/709,828 Reply to Non-Final Office Action of wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 6 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
first GaN-based compound semiconductor layer
active layer with well layer
second GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–525 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,553,740Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, further comprising decreasing the light emission luminance immediately after the light emission luminance value becomes a maximum value.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the well layer is formed of an InGaN-based compound semiconductor layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the time from the start of the injection of the carrier to the stoppage of the injection of the carrier is less than 10 nanoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 10 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 100 A/cm2 or more when being converted into a current amount per 1 cm2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the amount of the injected carrier is 300 A/cm2 or more when being converted into a current amount per 1 cm 2 of the active layer.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein a light emitting wavelength is equal to or more than 500 nm and equal to or less than 570 nm.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 1 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is 0.5 nanosecond or less.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier injection period is about 2 picoseconds.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about ten times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about twenty times as long as the carrier injection period.
The method of driving a GaN-based semiconductor light emitting element according to claim 1, wherein the carrier rise period is about 10 nanoseconds.
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 2 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first 3 App l e. No. 12/709,828 Reply to Non-Final Office Action of conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a GaN-based semiconductor light emitting element of an image display device including the GaN-based semiconductor light emitting element for displaying an image, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound 4 App l e. No. 12/709,828 Reply to Non-Final Office Action of semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active layer; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device f r om a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a planar light source device for irradiating light to a transmissive or semitransmissive liquid crystal display device from a rear surface, a GaN-based semiconductor light emitting element as a light source included in the planar light source device being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
A method of driving a light emitting device including a GaN-based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a 5 App l e. No. 12/709,828 Reply to Non-Final Office Action of wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; then stopping the injection of the carrier at an end of a carrier injection period, before the light emission luminance becomes constant, and before screening occurs within the active la y er; and increasing the light emission luminance after stopping the injection of the carrier during a carrier rise period that is longer than the carrier injection period.
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then stopping the injection of the carrier before the inclination of the energy band within the active layer due to the injection of the carrier is changed. withdrawn
A method of driving a light emitting device including a GaN- based semiconductor light emitting element and a color conversion material which receives light emitted from the GaN-based semiconductor light emitting element and emits light with a wavelength different from a wavelength of the light emitted from the GaN-based semiconductor light emitting element, the GaN-based semiconductor light emitting element being formed by laminating a first GaN-based compound semiconductor layer having a first conductive type, an active layer having a well layer, a second GaN-based compound semiconductor layer having a second conductive type, the method comprising: starting light emission by the start of the injection of carrier; and then 6 App l e. No. 12/709,828 Reply to Non-Final Office Action of stopping the injection of the carrier before screening within the active layer due to the injection of the carrier occurs. withdrawn
Layer stacks claimed or described, ordered top of device to substrate.
GaN-based semiconductor light emitting element
Materials described outside the worked examples.
first GaN-based compound semiconductor layer
active layer with well layer
second GaN-based compound semiconductor layer
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 520–525 nm | — |
Thickness |
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