PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF

Seok In NA

Patent

Atlas literature

Patent

US 8,865,515

PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF

Seok In NA, Dong Yu KIM, Hye Young KOO, Jin Mun YUN et al.

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

1 independent · 8 dependent

1
Independentgraphene thin filmgraphene oxideorganic solventA-SO₂-NHNH₂graphene thin film
A method for fabricating a graphene thin ﬁlm, the method comprising: (a) preparing graphene oxide; 5 (b) preparing graphene through reducing the graphene oxide by a sulfonyl hydrazide-based reducing agent; (c) preparing a graphene dispersed solution by dispersing the graphene into an organic solvent; and (d) fabricating a graphene thin ﬁlm by applying the graphene dispersed 10 solution.
1. 2
  Dependent← claim 1CH₂SO₄KMnO₄HClHNO₃
  The method of claim 1, wherein, in step (a), the graphene oxide is obtained by treating graphite with at least one of acidic solution which is selected from a group consisting of H₂S O 4, KMn O 4, H Cl, and HN O3.
2. 4
  Dependent← claim 1A-SO₂-NHNH₂
  The method of claim 1, wherein the sulfonyl hydrazide-based reducing 20 agent is a compound having a sulfonyl hydrazide substituent of Chemical Formula 1 shown below: [Chemical Formula 1] 18 A o S O NHNH₂
3. 6
  Dependent← claim 1organic solvent
  The method of claim 1, wherein the organic solvent is at least any one selected from a group consisting of amides, alcohols, sulfoxides, 10 propylene carbonate, and acetonitrile.
4. 7
  Dependent← claim 1graphene thin filmgraphene thin film
  The method of claim 1, wherein a thickness of the graphene thin ﬁlm ranges from 0.5 nm to 10000 nm.
5. 8
  Dependent← claim 1graphene thin filmoptoelectronic device
  A method for fabricating an optoelectronic device comprising (1) a step of forming a buﬀer layer, and (2) a step of forming an electrode layer, wherein the buﬀer layer and the electrode layer are formed according to 5 the method of claim 1.

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

graphene thin film

graphene thin filmfilm

optoelectronic device

graphene thin filmelectrode layer

graphene thin filmbuffer layer

organic solar cell

negative_electrodenegative electrode

photo_a

Materials

Materials described outside the worked examples.

graphene thin film

Product Thin Film

graphene oxide

Precursor

organic solvent

Process steps

Additional fabrication and treatment steps described in the patent.

Chemical Reduction

Step 1

Process details

steps:prepare graphene oxide from graphite, reduce graphene oxide with sulfonyl hydrazide-based reducing agent, disperse graphene in organic solvent, apply graphene dispersed solution to form thin film

Materials:graphene thin filmgraphene oxide

Reported properties

Performance values and ranges asserted in the specification or claims.

Property	Value	Material
graphene thin film thickness range	0.5–10000	graphene thin film

Why these are connected

Related documents with shared materials, methods, properties, or citations.

PREPARATION METHOD FOR REDUCED GRAPHENE OXIDE USING SULFONYL HYDRAZIDE-BASED REDUCING AGENT AND OPTOELECTRONIC DEVICES THEREOF | Matter42 Literature