A process for synthesizing indium phosphide by liquid phosphorus injection method based on a synthesis system comprising a quartz phosphorus bubble, a condenser, a phosphorus source furnace, a lifting crucible, a low tem-perature inert gas random delivery system and a monocrystal furnace, characterized in that the method comprises the following steps: 1) Indium cleaning: performing a surface cleaning treat-ment on indium, and drying the cleaned indium for later use; 2) Phosphorus charging: charging red phosphorus into the quartz phosphorus bubble under the protection of a nitrogen atmosphere; 3) Furnace loading: placing the quartz phosphorus bubble into the phosphorus source furnace for heating; then loading the phosphorus source furnace equipped with the quartz phosphorus bubble, the condenser, a seed crystal, the crucible filled with indium and a mated graphite support, an insulation jacket and a heater into a hearth of the monocrystal furnace, and placing a boron oxide protective agent; 4) Communication of condenser: communicating an inlet of the condenser with the low temperature inert gas random delivery system and a mouth of the quartz phosphorus bubble, and checking whether there is air leakage; 5) Synthesis: A, closing a furnace door, vacuuming the furnace, ran-domly delivering a low temperature inert gas by the low temperature inert gas random delivery system into the furnace through the condenser, and maintaining the pressure in the furnace greater than the dissociation pressure of indium phosphide; B, heating the indium in the crucible until the indium melts, C, lifting the crucible to allow an outlet end of the condenser to inserted into the indium melt, and intro-ducing a circulating cooling liquid into the condenser; and D, vaporizing the phosphorus in the quartz phosphorus bubble by heating the phosphorus source furnace, con-densing the vaporized phosphorus vapor into liquid white phosphorus through the condenser, and flowing the liquid white phosphorus into the indium melt to react and synthesize a proportioned indium phosphide; and 6) Preparation of crystals: after the phosphorus in the quartz phosphorus bubble is completely vaporized and injected into the indium melt, lowering the crucible away from the outlet of the condenser, and then low-ering the seed crystal to perform a high-pressure liquid encapsulation Czochralski (HP-LEC) crystal growth; wherein a condensing medium in the condenser is a gallium indium alloy.

A process for synthesizing indium phosphide by liquid phosphorus injection method based on a synthesis system comprising a quartz phosphorus bubble, a condenser, a phosphorus source furnace, a lifting crucible, a low tem-perature inert gas random delivery system and a monocrystal furnace, characterized in that the method comprises the following steps: 1) Indium cleaning: performing a surface cleaning treat-ment on indium, and drying the cleaned indium for later use; 2) Phosphorus charging: charging red phosphorus into the quartz phosphorus bubble under the protection of a nitrogen atmosphere; 3) Furnace loading: placing the quartz phosphorus bubble into the phosphorus source furnace for heating; then loading the phosphorus source furnace equipped with the quartz phosphorus bubble, the condenser, a seed crystal, the crucible filled with indium and a mated graphite support, an insulation jacket and a heater into a hearth of the monocrystal furnace, and placing a boron oxide protective agent; 4) Communication of condenser: communicating an inlet of the condenser with the low temperature inert gas random delivery system and a mouth of the quartz phosphorus bubble, and checking whether there is air leakage; 5) Synthesis: A, closing a furnace door, vacuuming the furnace, ran-domly delivering a low temperature inert gas by the low temperature inert gas random delivery system into the furnace through the condenser, and maintaining the pressure in the furnace greater than the dissociation pressure of indium phosphide; B, heating the indium in the crucible until the indium melts, C, lifting the crucible to allow an outlet end of the condenser to inserted into the indium melt, and intro-ducing a circulating cooling liquid into the condenser; and D, vaporizing the phosphorus in the quartz phosphorus bubble by heating the phosphorus source furnace, con-densing the vaporized phosphorus vapor into liquid white phosphorus through the condenser, and flowing the liquid white phosphorus into the indium melt to react and synthesize a proportioned indium phosphide; and 6) Preparation of crystals: after the phosphorus in the quartz phosphorus bubble is completely vaporized and injected into the indium melt, lowering the crucible away from the outlet of the condenser, and then low-ering the seed crystal to perform a high-pressure liquid encapsulation Czochralski (HP-LEC) crystal growth; wherein a condensing medium in the condenser is a gallium indium alloy.

A process for synthesizing indium phosphide by liquid phosphorus injection method based on a synthesis system comprising a quartz phosphorus bubble, a condenser, a phosphorus source furnace, a lifting crucible, a low tem-perature inert gas random delivery system and a monocrystal furnace, characterized in that the method comprises the following steps: 1) Indium cleaning: performing a surface cleaning treat-ment on indium, and drying the cleaned indium for later use; 2) Phosphorus charging: charging red phosphorus into the quartz phosphorus bubble under the protection of a nitrogen atmosphere; 3) Furnace loading: placing the quartz phosphorus bubble into the phosphorus source furnace for heating; then loading the phosphorus source furnace equipped with the quartz phosphorus bubble, the condenser, a seed crystal, the crucible filled with indium and a mated graphite support, an insulation jacket and a heater into a hearth of the monocrystal furnace, and placing a boron oxide protective agent; 4) Communication of condenser: communicating an inlet of the condenser with the low temperature inert gas random delivery system and a mouth of the quartz phosphorus bubble, and checking whether there is air leakage; 5) Synthesis: A, closing a furnace door, vacuuming the furnace, ran-domly delivering a low temperature inert gas by the low temperature inert gas random delivery system into the furnace through the condenser, and maintaining the pressure in the furnace greater than the dissociation pressure of indium phosphide; B, heating the indium in the crucible until the indium melts, C, lifting the crucible to allow an outlet end of the condenser to inserted into the indium melt, and intro-ducing a circulating cooling liquid into the condenser; and D, vaporizing the phosphorus in the quartz phosphorus bubble by heating the phosphorus source furnace, con-densing the vaporized phosphorus vapor into liquid white phosphorus through the condenser, and flowing the liquid white phosphorus into the indium melt to react and synthesize a proportioned indium phosphide; and 6) Preparation of crystals: after the phosphorus in the quartz phosphorus bubble is completely vaporized and injected into the indium melt, lowering the crucible away from the outlet of the condenser, and then low-ering the seed crystal to perform a high-pressure liquid encapsulation Czochralski (HP-LEC) crystal growth; wherein a condensing medium in the condenser is a gallium indium alloy.

A process for synthesizing indium phosphide by liquid phosphorus injection method based on a synthesis system comprising a quartz phosphorus bubble, a condenser, a phosphorus source furnace, a lifting crucible, a low tem-perature inert gas random delivery system and a monocrystal furnace, characterized in that the method comprises the following steps: 1) Indium cleaning: performing a surface cleaning treat-ment on indium, and drying the cleaned indium for later use; 2) Phosphorus charging: charging red phosphorus into the quartz phosphorus bubble under the protection of a nitrogen atmosphere; 3) Furnace loading: placing the quartz phosphorus bubble into the phosphorus source furnace for heating; then loading the phosphorus source furnace equipped with the quartz phosphorus bubble, the condenser, a seed crystal, the crucible filled with indium and a mated graphite support, an insulation jacket and a heater into a hearth of the monocrystal furnace, and placing a boron oxide protective agent; 4) Communication of condenser: communicating an inlet of the condenser with the low temperature inert gas random delivery system and a mouth of the quartz phosphorus bubble, and checking whether there is air leakage; 5) Synthesis: A, closing a furnace door, vacuuming the furnace, ran-domly delivering a low temperature inert gas by the low temperature inert gas random delivery system into the furnace through the condenser, and maintaining the pressure in the furnace greater than the dissociation pressure of indium phosphide; B, heating the indium in the crucible until the indium melts, C, lifting the crucible to allow an outlet end of the condenser to inserted into the indium melt, and intro-ducing a circulating cooling liquid into the condenser; and D, vaporizing the phosphorus in the quartz phosphorus bubble by heating the phosphorus source furnace, con-densing the vaporized phosphorus vapor into liquid white phosphorus through the condenser, and flowing the liquid white phosphorus into the indium melt to react and synthesize a proportioned indium phosphide; and 6) Preparation of crystals: after the phosphorus in the quartz phosphorus bubble is completely vaporized and injected into the indium melt, lowering the crucible away from the outlet of the condenser, and then low-ering the seed crystal to perform a high-pressure liquid encapsulation Czochralski (HP-LEC) crystal growth; wherein a condensing medium in the condenser is a gallium indium alloy.