Patent
US 9,064,698THIN-FILM GALLIUM NITRIDE STRUCTURES GROWN ON GRAPHENE
Ali Khakifirooz
US
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Patent
Atlas literature
Patent
US 9,064,698Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
FIG. 2. Exemplary semiconducting oxide materials for forming such a buffer layer include erbium oxide and lanthanum oxide. The buffer layer can be provided by …
FIG. 3. In one or more embodiments, a stressor layer 34 is formed over the nitride structures. The YO R₉₂₀₁₃₀₇₃₄U S 1 8 method further includes causing a …
FIG. 4 is a schematic sectional view of the structure of
FIG. 5. The flexible handle layer is a polyimide tape in one or more embodiments. Mechanical force exerted on the flexible handle layer 36 and stressor layer 34 …
FIG. 6 is a schematic sectional view of the structure of
FIG. 7B. The gallium nitride structures are used to form electronic devices in one or more embodiments. Aspect ratio trapping 10 facilitates the growth of …
FIG. 20 6 is obtained. In other embodiments, the dielectric layer 22 will be missing from the transferred layer. In some embodiments, the structure including …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: providing a silicon carbide substrate having a dielectric layer on a surface of the 5 substrate; forming trenches within the dielectric layer to expose a plurality of surface portions of the substrate within the trenches, the trenches having a selected aspect ratio; forming an epitaxial graphene layer within the trenches on the exposed surface portions of the substrate; 10 forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming epitaxial gallium nitride structures on the epitaxial buffer layer and within the trenches in the dielectric layer, and separating the gallium nitride structures from the substrate along a plane between 15 the graphene layer and the substrate.
The method of Claim 1, wherein the step of forming the gallium nitride structures fu rther includes forming at least one epitaxial gallium nitride layer having a selected thickness and a wurtzite crystal structure directly on the epitaxial buffer layer, wherein 20 the selected thickness of the gallium nitride layer and the aspect ratio of the trenches are sufficient to provide a substantially defect-free surface portion within the gallium nitride layer.
10 17. A method comprising: obtaining a silicon carbide substrate having a dielectric layer on a surface of the substrate and trenches within the dielectric layer that expose a plurality of surface portions of the substrate within the trenches; forming an epitaxial graphene layer within the trenches on the exposed surface 15 portions of the substrate; forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming an epitaxial gallium nitride layer having a wurzite crystal structure within each of the trenches directly on the epitaxial buffer layer and having sufficient thickness 20 to form a defect-free surface portion, and separating the gallium nitride layers and dielectric layer from the substrate along a plane between the graphene layer and the substrate.
The method of Claim 17, further including: 25 forming a stressor layer over the epitaxial gallium nitride layers, and causing a fracture along the plane between the graphene layer and the substrate by exerting a force on the stressor layer.
Layer stacks claimed or described, ordered top of device to substrate.
thin-film gallium nitride structure in trenched dielectric on SiC
Materials described outside the worked examples.
silicon carbide substrate
SiC
epitaxial graphene layer
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,064,698Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
FIG. 2. Exemplary semiconducting oxide materials for forming such a buffer layer include erbium oxide and lanthanum oxide. The buffer layer can be provided by …
FIG. 3. In one or more embodiments, a stressor layer 34 is formed over the nitride structures. The YO R₉₂₀₁₃₀₇₃₄U S 1 8 method further includes causing a …
FIG. 4 is a schematic sectional view of the structure of
FIG. 5. The flexible handle layer is a polyimide tape in one or more embodiments. Mechanical force exerted on the flexible handle layer 36 and stressor layer 34 …
FIG. 6 is a schematic sectional view of the structure of
FIG. 7B. The gallium nitride structures are used to form electronic devices in one or more embodiments. Aspect ratio trapping 10 facilitates the growth of …
FIG. 20 6 is obtained. In other embodiments, the dielectric layer 22 will be missing from the transferred layer. In some embodiments, the structure including …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: providing a silicon carbide substrate having a dielectric layer on a surface of the 5 substrate; forming trenches within the dielectric layer to expose a plurality of surface portions of the substrate within the trenches, the trenches having a selected aspect ratio; forming an epitaxial graphene layer within the trenches on the exposed surface portions of the substrate; 10 forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming epitaxial gallium nitride structures on the epitaxial buffer layer and within the trenches in the dielectric layer, and separating the gallium nitride structures from the substrate along a plane between 15 the graphene layer and the substrate.
The method of Claim 1, wherein the step of forming the gallium nitride structures fu rther includes forming at least one epitaxial gallium nitride layer having a selected thickness and a wurtzite crystal structure directly on the epitaxial buffer layer, wherein 20 the selected thickness of the gallium nitride layer and the aspect ratio of the trenches are sufficient to provide a substantially defect-free surface portion within the gallium nitride layer.
10 17. A method comprising: obtaining a silicon carbide substrate having a dielectric layer on a surface of the substrate and trenches within the dielectric layer that expose a plurality of surface portions of the substrate within the trenches; forming an epitaxial graphene layer within the trenches on the exposed surface 15 portions of the substrate; forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming an epitaxial gallium nitride layer having a wurzite crystal structure within each of the trenches directly on the epitaxial buffer layer and having sufficient thickness 20 to form a defect-free surface portion, and separating the gallium nitride layers and dielectric layer from the substrate along a plane between the graphene layer and the substrate.
The method of Claim 17, further including: 25 forming a stressor layer over the epitaxial gallium nitride layers, and causing a fracture along the plane between the graphene layer and the substrate by exerting a force on the stressor layer.
Layer stacks claimed or described, ordered top of device to substrate.
thin-film gallium nitride structure in trenched dielectric on SiC
Materials described outside the worked examples.
silicon carbide substrate
SiC
epitaxial graphene layer
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,064,698Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
FIG. 2. Exemplary semiconducting oxide materials for forming such a buffer layer include erbium oxide and lanthanum oxide. The buffer layer can be provided by …
FIG. 3. In one or more embodiments, a stressor layer 34 is formed over the nitride structures. The YO R₉₂₀₁₃₀₇₃₄U S 1 8 method further includes causing a …
FIG. 4 is a schematic sectional view of the structure of
FIG. 5. The flexible handle layer is a polyimide tape in one or more embodiments. Mechanical force exerted on the flexible handle layer 36 and stressor layer 34 …
FIG. 6 is a schematic sectional view of the structure of
FIG. 7B. The gallium nitride structures are used to form electronic devices in one or more embodiments. Aspect ratio trapping 10 facilitates the growth of …
FIG. 20 6 is obtained. In other embodiments, the dielectric layer 22 will be missing from the transferred layer. In some embodiments, the structure including …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: providing a silicon carbide substrate having a dielectric layer on a surface of the 5 substrate; forming trenches within the dielectric layer to expose a plurality of surface portions of the substrate within the trenches, the trenches having a selected aspect ratio; forming an epitaxial graphene layer within the trenches on the exposed surface portions of the substrate; 10 forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming epitaxial gallium nitride structures on the epitaxial buffer layer and within the trenches in the dielectric layer, and separating the gallium nitride structures from the substrate along a plane between 15 the graphene layer and the substrate.
The method of Claim 1, wherein the step of forming the gallium nitride structures fu rther includes forming at least one epitaxial gallium nitride layer having a selected thickness and a wurtzite crystal structure directly on the epitaxial buffer layer, wherein 20 the selected thickness of the gallium nitride layer and the aspect ratio of the trenches are sufficient to provide a substantially defect-free surface portion within the gallium nitride layer.
10 17. A method comprising: obtaining a silicon carbide substrate having a dielectric layer on a surface of the substrate and trenches within the dielectric layer that expose a plurality of surface portions of the substrate within the trenches; forming an epitaxial graphene layer within the trenches on the exposed surface 15 portions of the substrate; forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming an epitaxial gallium nitride layer having a wurzite crystal structure within each of the trenches directly on the epitaxial buffer layer and having sufficient thickness 20 to form a defect-free surface portion, and separating the gallium nitride layers and dielectric layer from the substrate along a plane between the graphene layer and the substrate.
The method of Claim 17, further including: 25 forming a stressor layer over the epitaxial gallium nitride layers, and causing a fracture along the plane between the graphene layer and the substrate by exerting a force on the stressor layer.
Layer stacks claimed or described, ordered top of device to substrate.
thin-film gallium nitride structure in trenched dielectric on SiC
Materials described outside the worked examples.
silicon carbide substrate
SiC
epitaxial graphene layer
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,064,698Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
FIG. 2. Exemplary semiconducting oxide materials for forming such a buffer layer include erbium oxide and lanthanum oxide. The buffer layer can be provided by …
FIG. 3. In one or more embodiments, a stressor layer 34 is formed over the nitride structures. The YO R₉₂₀₁₃₀₇₃₄U S 1 8 method further includes causing a …
FIG. 4 is a schematic sectional view of the structure of
FIG. 5. The flexible handle layer is a polyimide tape in one or more embodiments. Mechanical force exerted on the flexible handle layer 36 and stressor layer 34 …
FIG. 6 is a schematic sectional view of the structure of
FIG. 7B. The gallium nitride structures are used to form electronic devices in one or more embodiments. Aspect ratio trapping 10 facilitates the growth of …
FIG. 20 6 is obtained. In other embodiments, the dielectric layer 22 will be missing from the transferred layer. In some embodiments, the structure including …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method comprising: providing a silicon carbide substrate having a dielectric layer on a surface of the 5 substrate; forming trenches within the dielectric layer to expose a plurality of surface portions of the substrate within the trenches, the trenches having a selected aspect ratio; forming an epitaxial graphene layer within the trenches on the exposed surface portions of the substrate; 10 forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming epitaxial gallium nitride structures on the epitaxial buffer layer and within the trenches in the dielectric layer, and separating the gallium nitride structures from the substrate along a plane between 15 the graphene layer and the substrate.
The method of Claim 1, wherein the step of forming the gallium nitride structures fu rther includes forming at least one epitaxial gallium nitride layer having a selected thickness and a wurtzite crystal structure directly on the epitaxial buffer layer, wherein 20 the selected thickness of the gallium nitride layer and the aspect ratio of the trenches are sufficient to provide a substantially defect-free surface portion within the gallium nitride layer.
10 17. A method comprising: obtaining a silicon carbide substrate having a dielectric layer on a surface of the substrate and trenches within the dielectric layer that expose a plurality of surface portions of the substrate within the trenches; forming an epitaxial graphene layer within the trenches on the exposed surface 15 portions of the substrate; forming an epitaxial buffer layer from a rare earth oxide material exhibiting a hexagonal lattice structure directly on the graphene layer; forming an epitaxial gallium nitride layer having a wurzite crystal structure within each of the trenches directly on the epitaxial buffer layer and having sufficient thickness 20 to form a defect-free surface portion, and separating the gallium nitride layers and dielectric layer from the substrate along a plane between the graphene layer and the substrate.
The method of Claim 17, further including: 25 forming a stressor layer over the epitaxial gallium nitride layers, and causing a fracture along the plane between the graphene layer and the substrate by exerting a force on the stressor layer.
Layer stacks claimed or described, ordered top of device to substrate.
thin-film gallium nitride structure in trenched dielectric on SiC
Materials described outside the worked examples.
silicon carbide substrate
SiC
epitaxial graphene layer
C
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1. In some embodiments, the substrate carbon has an atomic concentration of 45- 55%. Impurities or dopants may be present in the substrate. A dielectric …
Related documents with shared materials, methods, properties, or citations.
gallium nitride
GaN
rare earth oxide buffer layer
stressor layer
dielectric layer
single-crystal erbium oxide
Er₂O₃
single-crystal lanthanum oxide
La₂O₃
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
gallium nitride
GaN
rare earth oxide buffer layer
stressor layer
dielectric layer
single-crystal erbium oxide
Er₂O₃
single-crystal lanthanum oxide
La₂O₃
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
gallium nitride
GaN
rare earth oxide buffer layer
stressor layer
dielectric layer
single-crystal erbium oxide
Er₂O₃
single-crystal lanthanum oxide
La₂O₃
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN
gallium nitride
GaN
rare earth oxide buffer layer
stressor layer
dielectric layer
single-crystal erbium oxide
Er₂O₃
single-crystal lanthanum oxide
La₂O₃
aluminum gallium nitride
AlGaN
indium gallium nitride
InGaN