Patent
US 9,536,840Three-dimensional integrated circuit with graphene shield
Yang Du
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,536,840Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first semiconductor integrated circuit tier comprising a first one or more active components; a second semiconductor integrated circuit tier comprising a second one or more active components vertically positioned relative to the first semiconductor integrated circuit tier; and at least one graphene layer disposed between the first and second semiconductor integrated circuit tiers and extending from a first exterior edge of the monolithic 3DIC to a second opposite exterior edge of the monolithic 3DIC, the at least one graphene layer electrically isolated from all active components in the first and second semiconductor integrated circuit tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer provides electromagnetic shielding between the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer is configured to conduct heat away from interiorly positioned active elements within the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer defines at least one aperture.
The monolithic 3DIC of claim 1, further comprising a thermal via thermally contiguous to the at least one graphene layer.
The monolithic 3DIC of claim 1, further comprising a bonding layer bonding the first semiconductor integrated circuit tier to the second semiconductor integrated circuit tier and wherein the at least one graphene layer is positioned below the bonding layer.
The monolithic 3DIC of claim 1 integrated into a semiconductor die. Page 6 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
The monolithic 3D I C of claim 1, further comprising a device selected from the group consisting of: a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a mobile phone, a cellular phone, a computer, a portable computer, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, and a portable digital video player, into which the monolithic 3D I C is integrated.
The monolithic 3D I C of claim 1, wherein the at least one graphene layer is configured to remove heat generated in both the first semiconductor integrated circuit tier and the second semiconductor integrated circuit tier. Page 7 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
canceled
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first means for providing a semiconductor tier comprising a first one or more active components; a second means for providing a semiconductor tier comprising a second one or more active components vertically positioned relative to the first means for providing the semiconductor tier; and at least one graphene layer disposed between the first and second means for providing the semiconductor tiers and extending from a first exterior edge of the monolithic 3DI C to a second opposite exterior edge of the monolithic 3D I C, the at least one graphene layer electrically isolated from all active components in the semiconductor tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3D I C of claim 16, wherein the at least one graphene layer is configured to remove heat generated in both the first means for providing the semiconductor tier and the second means for providing the semiconductor tier. Page 8 of 12
17-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
monolithic 3D integrated circuit with graphene interlayer shield
monolithic 3D integrated circuit with graphene interlayer shield (means-plus-function form)
Materials described outside the worked examples.
graphene
C
annealed oxide
Patent
Atlas literature
Patent
US 9,536,840Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first semiconductor integrated circuit tier comprising a first one or more active components; a second semiconductor integrated circuit tier comprising a second one or more active components vertically positioned relative to the first semiconductor integrated circuit tier; and at least one graphene layer disposed between the first and second semiconductor integrated circuit tiers and extending from a first exterior edge of the monolithic 3DIC to a second opposite exterior edge of the monolithic 3DIC, the at least one graphene layer electrically isolated from all active components in the first and second semiconductor integrated circuit tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer provides electromagnetic shielding between the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer is configured to conduct heat away from interiorly positioned active elements within the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer defines at least one aperture.
The monolithic 3DIC of claim 1, further comprising a thermal via thermally contiguous to the at least one graphene layer.
The monolithic 3DIC of claim 1, further comprising a bonding layer bonding the first semiconductor integrated circuit tier to the second semiconductor integrated circuit tier and wherein the at least one graphene layer is positioned below the bonding layer.
The monolithic 3DIC of claim 1 integrated into a semiconductor die. Page 6 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
The monolithic 3D I C of claim 1, further comprising a device selected from the group consisting of: a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a mobile phone, a cellular phone, a computer, a portable computer, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, and a portable digital video player, into which the monolithic 3D I C is integrated.
The monolithic 3D I C of claim 1, wherein the at least one graphene layer is configured to remove heat generated in both the first semiconductor integrated circuit tier and the second semiconductor integrated circuit tier. Page 7 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
canceled
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first means for providing a semiconductor tier comprising a first one or more active components; a second means for providing a semiconductor tier comprising a second one or more active components vertically positioned relative to the first means for providing the semiconductor tier; and at least one graphene layer disposed between the first and second means for providing the semiconductor tiers and extending from a first exterior edge of the monolithic 3DI C to a second opposite exterior edge of the monolithic 3D I C, the at least one graphene layer electrically isolated from all active components in the semiconductor tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3D I C of claim 16, wherein the at least one graphene layer is configured to remove heat generated in both the first means for providing the semiconductor tier and the second means for providing the semiconductor tier. Page 8 of 12
17-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
monolithic 3D integrated circuit with graphene interlayer shield
monolithic 3D integrated circuit with graphene interlayer shield (means-plus-function form)
Materials described outside the worked examples.
graphene
C
annealed oxide
Patent
Atlas literature
Patent
US 9,536,840Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first semiconductor integrated circuit tier comprising a first one or more active components; a second semiconductor integrated circuit tier comprising a second one or more active components vertically positioned relative to the first semiconductor integrated circuit tier; and at least one graphene layer disposed between the first and second semiconductor integrated circuit tiers and extending from a first exterior edge of the monolithic 3DIC to a second opposite exterior edge of the monolithic 3DIC, the at least one graphene layer electrically isolated from all active components in the first and second semiconductor integrated circuit tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer provides electromagnetic shielding between the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer is configured to conduct heat away from interiorly positioned active elements within the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer defines at least one aperture.
The monolithic 3DIC of claim 1, further comprising a thermal via thermally contiguous to the at least one graphene layer.
The monolithic 3DIC of claim 1, further comprising a bonding layer bonding the first semiconductor integrated circuit tier to the second semiconductor integrated circuit tier and wherein the at least one graphene layer is positioned below the bonding layer.
The monolithic 3DIC of claim 1 integrated into a semiconductor die. Page 6 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
The monolithic 3D I C of claim 1, further comprising a device selected from the group consisting of: a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a mobile phone, a cellular phone, a computer, a portable computer, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, and a portable digital video player, into which the monolithic 3D I C is integrated.
The monolithic 3D I C of claim 1, wherein the at least one graphene layer is configured to remove heat generated in both the first semiconductor integrated circuit tier and the second semiconductor integrated circuit tier. Page 7 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
canceled
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first means for providing a semiconductor tier comprising a first one or more active components; a second means for providing a semiconductor tier comprising a second one or more active components vertically positioned relative to the first means for providing the semiconductor tier; and at least one graphene layer disposed between the first and second means for providing the semiconductor tiers and extending from a first exterior edge of the monolithic 3DI C to a second opposite exterior edge of the monolithic 3D I C, the at least one graphene layer electrically isolated from all active components in the semiconductor tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3D I C of claim 16, wherein the at least one graphene layer is configured to remove heat generated in both the first means for providing the semiconductor tier and the second means for providing the semiconductor tier. Page 8 of 12
17-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
monolithic 3D integrated circuit with graphene interlayer shield
monolithic 3D integrated circuit with graphene interlayer shield (means-plus-function form)
Materials described outside the worked examples.
graphene
C
annealed oxide
Patent
Atlas literature
Patent
US 9,536,840Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first semiconductor integrated circuit tier comprising a first one or more active components; a second semiconductor integrated circuit tier comprising a second one or more active components vertically positioned relative to the first semiconductor integrated circuit tier; and at least one graphene layer disposed between the first and second semiconductor integrated circuit tiers and extending from a first exterior edge of the monolithic 3DIC to a second opposite exterior edge of the monolithic 3DIC, the at least one graphene layer electrically isolated from all active components in the first and second semiconductor integrated circuit tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer provides electromagnetic shielding between the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer is configured to conduct heat away from interiorly positioned active elements within the first and second semiconductor integrated circuit tiers.
The monolithic 3DIC of claim 1, wherein the at least one graphene layer defines at least one aperture.
The monolithic 3DIC of claim 1, further comprising a thermal via thermally contiguous to the at least one graphene layer.
The monolithic 3DIC of claim 1, further comprising a bonding layer bonding the first semiconductor integrated circuit tier to the second semiconductor integrated circuit tier and wherein the at least one graphene layer is positioned below the bonding layer.
The monolithic 3DIC of claim 1 integrated into a semiconductor die. Page 6 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
The monolithic 3D I C of claim 1, further comprising a device selected from the group consisting of: a set top box, an entertainment unit, a navigation device, a communications device, a fixed location data unit, a mobile location data unit, a mobile phone, a cellular phone, a computer, a portable computer, a desktop computer, a personal digital assistant (PDA), a monitor, a computer monitor, a television, a tuner, a radio, a satellite radio, a music player, a digital music player, a portable music player, a digital video player, a video player, a digital video disc (DVD) player, and a portable digital video player, into which the monolithic 3D I C is integrated.
The monolithic 3D I C of claim 1, wherein the at least one graphene layer is configured to remove heat generated in both the first semiconductor integrated circuit tier and the second semiconductor integrated circuit tier. Page 7 of 12 Application Serial No.: 13/765,06 1 Reply to Final Office Action mailed
canceled
A monolithic three-dimensional (3-D) integrated circuit (3D I C), comprising: a first means for providing a semiconductor tier comprising a first one or more active components; a second means for providing a semiconductor tier comprising a second one or more active components vertically positioned relative to the first means for providing the semiconductor tier; and at least one graphene layer disposed between the first and second means for providing the semiconductor tiers and extending from a first exterior edge of the monolithic 3DI C to a second opposite exterior edge of the monolithic 3D I C, the at least one graphene layer electrically isolated from all active components in the semiconductor tiers, wherein the at least one graphene layer is coupled to ground.
The monolithic 3D I C of claim 16, wherein the at least one graphene layer is configured to remove heat generated in both the first means for providing the semiconductor tier and the second means for providing the semiconductor tier. Page 8 of 12
17-20. canceled
Layer stacks claimed or described, ordered top of device to substrate.
monolithic 3D integrated circuit with graphene interlayer shield
monolithic 3D integrated circuit with graphene interlayer shield (means-plus-function form)
Materials described outside the worked examples.
graphene
C
annealed oxide
oxide
silicon
Si
oxide
silicon
Si
oxide
silicon
Si
oxide
silicon
Si