Patent
Atlas literature
Patent
US 10,243,104Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-22. Canceled
Canceled
A device, comprising: a plurality of epitaxial nanowires on a substrate, the plurality of epitaxial nanowires having been grown epitaxially on the substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of the plurality of epitaxial nanowires, wherein the plurality of epitaxial nanowires comprise at least one Group I II-V compound; wherein the substrate comprises graphene, graphane, or graphene oxide; wherein the substrate has a thickness of 20 nm or less; wherein the plurality of epitaxial nanowires have been grown in the [111] or [0001] direction; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of at least some of the plurality of epitaxial nanowires. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires comprise A l As, A l N, GaSb, GaP, GaN, GaAs, I nP, InN, InGaAs, InGaN, InAs, Al GaAs, A l GaN, or A l InGaN. Previously presented
The device of claim 23, wherein the graphene, graphane, or graphene oxide comprises 10 or fewer atomic layers. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a laminated substrate exfoliated from a Kish graphite, a highly ordered pyrolytic graphite, or CVD-grown graphene layers on metallic films or foils. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a CVD-grown graphene layer [[s]] on a Cu or Pt film [[s]]. Currently amended
The device of claim 23, wherein the substrate and/or the graphitic layer is flexible and transparent. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified with a plasma treatment with a gas of oxygen, hydrogen, NO, or their combinations. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified by doping using a solution of FeC l 3, AuC l 3, or GaC l3. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is doped by adsorption of organic or inorganic molecules. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are no more than 500 nm in diameter and have a length of up to 5 pm. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are substantially parallel to each other. Previously presented
The device of claim 23, wherein the catalyst is Au or Ag. Previously presented
The device of claim 23, wherein the graphitic layer is graphene. Previously presented
The device of claim 23, wherein the graphitic layer is doped with doping ions and the plurality of epitaxial nanowires are doped with the same doping ions. Previously presented
A process for the preparation of the device of claim 23, comprising: (I) providing Group I II-V elements to a surface of the substrate using a molecular beam; (II) epitaxially growing the plurality of epitaxial nanowires from the surface of the substrate in the presence of the metal catalyst such that the catalyst deposit remains on nanowires; and (III) contacting the metal catalyst graphitic layer is in contact with at least some of the plurality of epitaxial nanowires. Previously
Canceled
Canceled
Canceled
Inventor(s) Helge Weman et al. Attorney Docket No. 10417-003US₁ Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanowire device with graphene top and bottom electrodes
Materials described outside the worked examples.
graphene
graphane
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 250–900 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,104Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-22. Canceled
Canceled
A device, comprising: a plurality of epitaxial nanowires on a substrate, the plurality of epitaxial nanowires having been grown epitaxially on the substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of the plurality of epitaxial nanowires, wherein the plurality of epitaxial nanowires comprise at least one Group I II-V compound; wherein the substrate comprises graphene, graphane, or graphene oxide; wherein the substrate has a thickness of 20 nm or less; wherein the plurality of epitaxial nanowires have been grown in the [111] or [0001] direction; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of at least some of the plurality of epitaxial nanowires. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires comprise A l As, A l N, GaSb, GaP, GaN, GaAs, I nP, InN, InGaAs, InGaN, InAs, Al GaAs, A l GaN, or A l InGaN. Previously presented
The device of claim 23, wherein the graphene, graphane, or graphene oxide comprises 10 or fewer atomic layers. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a laminated substrate exfoliated from a Kish graphite, a highly ordered pyrolytic graphite, or CVD-grown graphene layers on metallic films or foils. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a CVD-grown graphene layer [[s]] on a Cu or Pt film [[s]]. Currently amended
The device of claim 23, wherein the substrate and/or the graphitic layer is flexible and transparent. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified with a plasma treatment with a gas of oxygen, hydrogen, NO, or their combinations. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified by doping using a solution of FeC l 3, AuC l 3, or GaC l3. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is doped by adsorption of organic or inorganic molecules. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are no more than 500 nm in diameter and have a length of up to 5 pm. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are substantially parallel to each other. Previously presented
The device of claim 23, wherein the catalyst is Au or Ag. Previously presented
The device of claim 23, wherein the graphitic layer is graphene. Previously presented
The device of claim 23, wherein the graphitic layer is doped with doping ions and the plurality of epitaxial nanowires are doped with the same doping ions. Previously presented
A process for the preparation of the device of claim 23, comprising: (I) providing Group I II-V elements to a surface of the substrate using a molecular beam; (II) epitaxially growing the plurality of epitaxial nanowires from the surface of the substrate in the presence of the metal catalyst such that the catalyst deposit remains on nanowires; and (III) contacting the metal catalyst graphitic layer is in contact with at least some of the plurality of epitaxial nanowires. Previously
Canceled
Canceled
Canceled
Inventor(s) Helge Weman et al. Attorney Docket No. 10417-003US₁ Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanowire device with graphene top and bottom electrodes
Materials described outside the worked examples.
graphene
graphane
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 250–900 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,104Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-22. Canceled
Canceled
A device, comprising: a plurality of epitaxial nanowires on a substrate, the plurality of epitaxial nanowires having been grown epitaxially on the substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of the plurality of epitaxial nanowires, wherein the plurality of epitaxial nanowires comprise at least one Group I II-V compound; wherein the substrate comprises graphene, graphane, or graphene oxide; wherein the substrate has a thickness of 20 nm or less; wherein the plurality of epitaxial nanowires have been grown in the [111] or [0001] direction; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of at least some of the plurality of epitaxial nanowires. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires comprise A l As, A l N, GaSb, GaP, GaN, GaAs, I nP, InN, InGaAs, InGaN, InAs, Al GaAs, A l GaN, or A l InGaN. Previously presented
The device of claim 23, wherein the graphene, graphane, or graphene oxide comprises 10 or fewer atomic layers. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a laminated substrate exfoliated from a Kish graphite, a highly ordered pyrolytic graphite, or CVD-grown graphene layers on metallic films or foils. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a CVD-grown graphene layer [[s]] on a Cu or Pt film [[s]]. Currently amended
The device of claim 23, wherein the substrate and/or the graphitic layer is flexible and transparent. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified with a plasma treatment with a gas of oxygen, hydrogen, NO, or their combinations. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified by doping using a solution of FeC l 3, AuC l 3, or GaC l3. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is doped by adsorption of organic or inorganic molecules. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are no more than 500 nm in diameter and have a length of up to 5 pm. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are substantially parallel to each other. Previously presented
The device of claim 23, wherein the catalyst is Au or Ag. Previously presented
The device of claim 23, wherein the graphitic layer is graphene. Previously presented
The device of claim 23, wherein the graphitic layer is doped with doping ions and the plurality of epitaxial nanowires are doped with the same doping ions. Previously presented
A process for the preparation of the device of claim 23, comprising: (I) providing Group I II-V elements to a surface of the substrate using a molecular beam; (II) epitaxially growing the plurality of epitaxial nanowires from the surface of the substrate in the presence of the metal catalyst such that the catalyst deposit remains on nanowires; and (III) contacting the metal catalyst graphitic layer is in contact with at least some of the plurality of epitaxial nanowires. Previously
Canceled
Canceled
Canceled
Inventor(s) Helge Weman et al. Attorney Docket No. 10417-003US₁ Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanowire device with graphene top and bottom electrodes
Materials described outside the worked examples.
graphene
graphane
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 250–900 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,243,104Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
1-22. Canceled
Canceled
A device, comprising: a plurality of epitaxial nanowires on a substrate, the plurality of epitaxial nanowires having been grown epitaxially on the substrate in the presence of a metal catalyst such that a catalyst deposit is located at the top of at least some of the plurality of epitaxial nanowires, wherein the plurality of epitaxial nanowires comprise at least one Group I II-V compound; wherein the substrate comprises graphene, graphane, or graphene oxide; wherein the substrate has a thickness of 20 nm or less; wherein the plurality of epitaxial nanowires have been grown in the [111] or [0001] direction; and wherein a graphitic layer is in contact with at least some of the catalyst deposits on top of at least some of the plurality of epitaxial nanowires. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires comprise A l As, A l N, GaSb, GaP, GaN, GaAs, I nP, InN, InGaAs, InGaN, InAs, Al GaAs, A l GaN, or A l InGaN. Previously presented
The device of claim 23, wherein the graphene, graphane, or graphene oxide comprises 10 or fewer atomic layers. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a laminated substrate exfoliated from a Kish graphite, a highly ordered pyrolytic graphite, or CVD-grown graphene layers on metallic films or foils. Previously presented
The device of claim 23, wherein the substrate and/or the graphitic layer is a CVD-grown graphene layer [[s]] on a Cu or Pt film [[s]]. Currently amended
The device of claim 23, wherein the substrate and/or the graphitic layer is flexible and transparent. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified with a plasma treatment with a gas of oxygen, hydrogen, NO, or their combinations. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is modified by doping using a solution of FeC l 3, AuC l 3, or GaC l3. Previously presented
The device of claim 23, wherein the substrate's surface and/or the graphitic layer is doped by adsorption of organic or inorganic molecules. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are no more than 500 nm in diameter and have a length of up to 5 pm. Previously presented
The device of claim 23, wherein the plurality of epitaxial nanowires are substantially parallel to each other. Previously presented
The device of claim 23, wherein the catalyst is Au or Ag. Previously presented
The device of claim 23, wherein the graphitic layer is graphene. Previously presented
The device of claim 23, wherein the graphitic layer is doped with doping ions and the plurality of epitaxial nanowires are doped with the same doping ions. Previously presented
A process for the preparation of the device of claim 23, comprising: (I) providing Group I II-V elements to a surface of the substrate using a molecular beam; (II) epitaxially growing the plurality of epitaxial nanowires from the surface of the substrate in the presence of the metal catalyst such that the catalyst deposit remains on nanowires; and (III) contacting the metal catalyst graphitic layer is in contact with at least some of the plurality of epitaxial nanowires. Previously
Canceled
Canceled
Canceled
Inventor(s) Helge Weman et al. Attorney Docket No. 10417-003US₁ Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
nanowire device with graphene top and bottom electrodes
Materials described outside the worked examples.
graphene
graphane
graphene oxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 250–900 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
graphitic layer
AlAs
AlN
GaSb
GaP
GaN
GaAs
InP
InN
InGaAs
InGaN
InAs
AlGaAs
AlGaN
AlInGaN
Au or Ag metal catalyst
Group III-V compound nanowire
| 25–200 nm |
| — |
Temperature | 300–700 °C | — |
Temperature | 540–630 °C | — |
Temperature | 590–630 °C | — |
Temperature | 420–540 °C | — |
Temperature | 430–540 °C | — |
Thickness | 50–300 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | 100–200 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 350 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 200 nm | — |
graphitic layer
AlAs
AlN
GaSb
GaP
GaN
GaAs
InP
InN
InGaAs
InGaN
InAs
AlGaAs
AlGaN
AlInGaN
Au or Ag metal catalyst
Group III-V compound nanowire
| 25–200 nm |
| — |
Temperature | 300–700 °C | — |
Temperature | 540–630 °C | — |
Temperature | 590–630 °C | — |
Temperature | 420–540 °C | — |
Temperature | 430–540 °C | — |
Thickness | 50–300 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | 100–200 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 350 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 200 nm | — |
graphitic layer
AlAs
AlN
GaSb
GaP
GaN
GaAs
InP
InN
InGaAs
InGaN
InAs
AlGaAs
AlGaN
AlInGaN
Au or Ag metal catalyst
Group III-V compound nanowire
| 25–200 nm |
| — |
Temperature | 300–700 °C | — |
Temperature | 540–630 °C | — |
Temperature | 590–630 °C | — |
Temperature | 420–540 °C | — |
Temperature | 430–540 °C | — |
Thickness | 50–300 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | 100–200 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 350 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 200 nm | — |
graphitic layer
AlAs
AlN
GaSb
GaP
GaN
GaAs
InP
InN
InGaAs
InGaN
InAs
AlGaAs
AlGaN
AlInGaN
Au or Ag metal catalyst
Group III-V compound nanowire
| 25–200 nm |
| — |
Temperature | 300–700 °C | — |
Temperature | 540–630 °C | — |
Temperature | 590–630 °C | — |
Temperature | 420–540 °C | — |
Temperature | 430–540 °C | — |
Thickness | 50–300 nm | — |
Pressure | 0.000001 Torr | — |
Thickness | 100–200 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≥ 1 µm | — |
Thickness | ≥ 80 nm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≥ 500 nm | — |
Thickness | ≥ 350 nm | — |
Thickness | ≥ 300 nm | — |
Thickness | ≥ 200 nm | — |
