TWO-DIMENSIONAL GRAPHENE COLD CATHODE, ANODE, AND GRID

David Glen Findley

Patent

Atlas literature

Patent

US 10,186,394

TWO-DIMENSIONAL GRAPHENE COLD CATHODE, ANODE, AND GRID

David Glen Findley

Claims

Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.

5 independent · 17 dependent

1
Independent
1-20. Canceled Canceled
20
Independent
Canceled
21
Independentdiamondgraphenetwo-dimensional vacuum microelectronic device (diamond/graphene/diamond)
An apparatus, comprising: a substrate; a two-dimensional anode positioned on the substrate; a two-dimensional cold cathode positioned on the substrate opposed to the two- dimensional anode; and one or more two-dimensional grids each including a portion positioned on the substrate between the two-dimensional anode and the two-dimensional cold cathode; wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids comprises: a ﬁrst diamond layer; a second diamond layer; and a layer of graphene induced from the ﬁrst diamond layer, the layer of graphene positioned between the ﬁrst diamond layer and the second diamond layer. New
1. 22
  Dependent← claim 21diamond
  The apparatus of Claim 21, wherein the ﬁrst diamond layer comprises a hexagonal diamond. New
2. 23
  Dependent← claim 21diamondgraphene
  The apparatus of Claim 21, wherein the layer of graphene is induced from the ﬁrst diamond layer by heating the substrate and the ﬁrst diamond layer. New
3. 26
  Dependent← claim 21two-dimensional vacuum microelectronic device (diamond/graphene/diamond)
  The apparatus of Claim 21, wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids are formed by reactive-ion electron-beam etching. New
4. 27
  Dependent← claim 21two-dimensional vacuum microelectronic device (diamond/graphene/diamond)
  The apparatus of Claim 21, wherein the two-dimensional cold cathode comprises a pointed tip and at least two round edges. New
5. 28
  Dependent← claim 21diamondpoly(hydridocarbyne)
  The apparatus of Claim 21, wherein the ﬁrst diamond layer is formed using a coat of a poly(hydridocarbyne) layer that is heated in an inert atmosphere. New
31
IndependentgrapheneSiCtwo-dimensional vacuum microelectronic device (SiC/graphene/SiC)
An apparatus, comprising: a substrate; a two-dimensional anode positioned on the substrate; a two-dimensional cold cathode positioned on the substrate opposed to the two- dimensional anode; and one or more two-dimensional grids each including a portion positioned on the substrate between the two-dimensional anode and the two-dimensional cold cathode; wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids comprises: a ﬁrst silicon carbide layer; a second silicon carbide layer; and a layer of graphene induced from the ﬁrst silicon carbide layer, the layer of graphene positioned between the ﬁrst silicon carbide layer and the second silicon carbide layer. New
1. 32
  Dependent← claim 31grapheneSiC
  The apparatus of Claim 31, wherein the layer of graphene is induced from the ﬁrst silicon carbide layer by heating the substrate and the ﬁrst silicon carbide layer. New
2. 34
  Dependent← claim 31two-dimensional vacuum microelectronic device (SiC/graphene/SiC)
  The apparatus of Claim 31, wherein each edge of the two-dimensional anode comprises a round edge. New
3. 35
  Dependent← claim 31two-dimensional vacuum microelectronic device (SiC/graphene/SiC)
  The apparatus of Claim 31, wherein the two-dimensional cold cathode comprises a pointed tip and a plurality of round edges. New
4. 36
  Dependent← claim 31two-dimensional vacuum microelectronic device (SiC/graphene/SiC)
  The apparatus of Claim 31, wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids are formed by reactive-ion electron-beam etching. New
5. 37
  Dependent← claim 31SiCpoly(methylsilyne)poly(silyne-co-hydridocarbyne)
  The apparatus of Claim 31, wherein the ﬁrst silicon carbide layer is formed using a coat of poly(methylsilyne) or poly(silyne-co-hydridocarbyne). New
6. 39
  Dependent← claim 31SiCpoly(methylsilyne)poly(hydridocarbyne)
  The apparatus of Claim 31, wherein the second silicon carbide layer is formed from one of poly(methylsilyne) or poly(hydridocarbyne). New
40
Independentdiamondgraphenetwo-dimensional vacuum microelectronic device (diamond/graphene/diamond, generic positioning)
An apparatus, comprising: a substrate; a two-dimensional anode positioned on the substrate; a two-dimensional cold cathode positioned on the substrate; and one or more two-dimensional grids each including a portion positioned on the substrate; wherein each of the two-dimensional anode, the two-dimensional cold cathode, and the one or more two-dimensional grids comprises a ﬁrst diamond layer, a second diamond layer, and a layer of graphene positioned between the ﬁrst diamond layer and the second diamond layer. New

Device structures

Layer stacks claimed or described, ordered top of device to substrate.

two-dimensional vacuum microelectronic device (diamond/graphene/diamond)

diamondsecond encapsulant

grapheneactive channel

diamondfirst encapsulant

substratesubstrate

two-dimensional vacuum microelectronic device (SiC/graphene/SiC)

SiCsecond encapsulant

Materials

Materials described outside the worked examples.

diamond

Encapsulant Layer

graphene

Active Layer

Process steps

Additional fabrication and treatment steps described in the patent.

Thermal Conversion

Step 1

Temperature

400, 500°C

Ambient

inert atmosphere

Process details

Why these are connected

Related documents with shared materials, methods, properties, or citations.

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TWO-DIMENSIONAL GRAPHENE COLD CATHODE, ANODE, AND GRID | Matter42 Literature