Patent
US 8,043,731VICINAL GALLIUM NITRIDE SUBSTRATE FOR HIGH QUALITY HOMOEPITAXY
Xueping Xu, Robert P. Vaudo, Jeffrey S. Flynn, George R. Brandes
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,043,731Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 2 0> directions.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <10 1 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <11 2 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction at an offcut angle in a range from about 0.2 to about 10 degrees, and wherein the offcut (Al,In,Ga)N (000 1) surface is offcut from the [000 1] direction at an offcut angle in a range from about 0.2 to about 10 degrees.
The (Al,In,Ga)N substrate of claim 1, wherein each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al, I n,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 gm2 AFM scan that is less than 0.9 nm.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 1 E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 5E₅ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 10 > directions, at an offcut angle of from about 2.5 to about 10 degrees, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 1, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method of making an (Al,In,Ga)N substrate according to claim 1, the method comprising: surface processing a (Al, I n,Ga)N wafer along a first side thereof produce a (Al,In,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al,In,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at an angle in a range from about 0.2 to about 10 degrees, and including a (Al, I n,Ga)N (000 1) surface offcut from the [000 1] direction at an angle in a range from about 0.2 to about 10 degrees, wherein the (Al, I n,Ga)N (0001) surface is offcut from the 3 4241-687-CON₃ <0001> direction predominantly towards a direction selected from the group consisting of <10 1 0> and <1110> directions, and wherein the offcut (Al, I n,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 14, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al,In,Ga)N substrate of claim 14, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al, I n,Ga)N substrate of claim 14, wherein the offcut (Al, I n,Ga)N (0001) surface has the same magnitude offcut as the offcut (Al, I n,Ga)N (000 1) surface.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 14, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method comprising: surface processing a (Al,In,Ga)N wafer along a first side thereof produce a (Al, I n,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane.
The method of claim 21, wherein following the first and second 1- appi n g surface processing steps, any of the following conditions are satisfied: the first side of the (Al, I n,Ga)N wafer is substantially parallel to the second side of the (Al,In,Ga)N wafer; and each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The method of claim 21, further comprising processing at least one of the first side and the second side of the (Al, I n,Ga)N wafer by any of lapping, polishing, and chemical mechanical polishing.
Layer stacks claimed or described, ordered top of device to substrate.
(Al,In,Ga)N offcut substrate
microelectronic or opto-electronic device article with homoepitaxial (Al,In,Ga)N layer
Materials described outside the worked examples.
(Al,In,Ga)N substrate
(Al,In,Ga)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 8) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 9) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,043,731Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 2 0> directions.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <10 1 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <11 2 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction at an offcut angle in a range from about 0.2 to about 10 degrees, and wherein the offcut (Al,In,Ga)N (000 1) surface is offcut from the [000 1] direction at an offcut angle in a range from about 0.2 to about 10 degrees.
The (Al,In,Ga)N substrate of claim 1, wherein each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al, I n,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 gm2 AFM scan that is less than 0.9 nm.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 1 E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 5E₅ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 10 > directions, at an offcut angle of from about 2.5 to about 10 degrees, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 1, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method of making an (Al,In,Ga)N substrate according to claim 1, the method comprising: surface processing a (Al, I n,Ga)N wafer along a first side thereof produce a (Al,In,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al,In,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at an angle in a range from about 0.2 to about 10 degrees, and including a (Al, I n,Ga)N (000 1) surface offcut from the [000 1] direction at an angle in a range from about 0.2 to about 10 degrees, wherein the (Al, I n,Ga)N (0001) surface is offcut from the 3 4241-687-CON₃ <0001> direction predominantly towards a direction selected from the group consisting of <10 1 0> and <1110> directions, and wherein the offcut (Al, I n,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 14, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al,In,Ga)N substrate of claim 14, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al, I n,Ga)N substrate of claim 14, wherein the offcut (Al, I n,Ga)N (0001) surface has the same magnitude offcut as the offcut (Al, I n,Ga)N (000 1) surface.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 14, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method comprising: surface processing a (Al,In,Ga)N wafer along a first side thereof produce a (Al, I n,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane.
The method of claim 21, wherein following the first and second 1- appi n g surface processing steps, any of the following conditions are satisfied: the first side of the (Al, I n,Ga)N wafer is substantially parallel to the second side of the (Al,In,Ga)N wafer; and each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The method of claim 21, further comprising processing at least one of the first side and the second side of the (Al, I n,Ga)N wafer by any of lapping, polishing, and chemical mechanical polishing.
Layer stacks claimed or described, ordered top of device to substrate.
(Al,In,Ga)N offcut substrate
microelectronic or opto-electronic device article with homoepitaxial (Al,In,Ga)N layer
Materials described outside the worked examples.
(Al,In,Ga)N substrate
(Al,In,Ga)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 8) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 9) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,043,731Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 2 0> directions.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <10 1 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <11 2 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction at an offcut angle in a range from about 0.2 to about 10 degrees, and wherein the offcut (Al,In,Ga)N (000 1) surface is offcut from the [000 1] direction at an offcut angle in a range from about 0.2 to about 10 degrees.
The (Al,In,Ga)N substrate of claim 1, wherein each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al, I n,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 gm2 AFM scan that is less than 0.9 nm.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 1 E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 5E₅ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 10 > directions, at an offcut angle of from about 2.5 to about 10 degrees, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 1, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method of making an (Al,In,Ga)N substrate according to claim 1, the method comprising: surface processing a (Al, I n,Ga)N wafer along a first side thereof produce a (Al,In,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al,In,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at an angle in a range from about 0.2 to about 10 degrees, and including a (Al, I n,Ga)N (000 1) surface offcut from the [000 1] direction at an angle in a range from about 0.2 to about 10 degrees, wherein the (Al, I n,Ga)N (0001) surface is offcut from the 3 4241-687-CON₃ <0001> direction predominantly towards a direction selected from the group consisting of <10 1 0> and <1110> directions, and wherein the offcut (Al, I n,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 14, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al,In,Ga)N substrate of claim 14, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al, I n,Ga)N substrate of claim 14, wherein the offcut (Al, I n,Ga)N (0001) surface has the same magnitude offcut as the offcut (Al, I n,Ga)N (000 1) surface.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 14, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method comprising: surface processing a (Al,In,Ga)N wafer along a first side thereof produce a (Al, I n,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane.
The method of claim 21, wherein following the first and second 1- appi n g surface processing steps, any of the following conditions are satisfied: the first side of the (Al, I n,Ga)N wafer is substantially parallel to the second side of the (Al,In,Ga)N wafer; and each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The method of claim 21, further comprising processing at least one of the first side and the second side of the (Al, I n,Ga)N wafer by any of lapping, polishing, and chemical mechanical polishing.
Layer stacks claimed or described, ordered top of device to substrate.
(Al,In,Ga)N offcut substrate
microelectronic or opto-electronic device article with homoepitaxial (Al,In,Ga)N layer
Materials described outside the worked examples.
(Al,In,Ga)N substrate
(Al,In,Ga)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 8) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 9) | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,043,731Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at a non-zero angle, and including a (Al,In,Ga)N (000 1) surface offcut from the [000 1] direction at a non-zero angle, wherein the offcut (Al,In,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 2 0> directions.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <10 1 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the (Al,In,Ga)N (0001) surface is offcut predominantly toward the <11 2 0> direction.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction at an offcut angle in a range from about 0.2 to about 10 degrees, and wherein the offcut (Al,In,Ga)N (000 1) surface is offcut from the [000 1] direction at an offcut angle in a range from about 0.2 to about 10 degrees.
The (Al,In,Ga)N substrate of claim 1, wherein each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al,In,Ga)N substrate of claim 1, wherein the offcut (Al, I n,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 gm2 AFM scan that is less than 0.9 nm.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 1 E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a dislocation density that is less than 5E₅ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al, I n,Ga)N substrate of claim 1, wherein the offcut (Al,In,Ga)N (0001) surface is offcut from the [0001] direction predominantly towards a direction selected from the group consisting of <10 1 0> and <11 10 > directions, at an offcut angle of from about 2.5 to about 10 degrees, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 1, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method of making an (Al,In,Ga)N substrate according to claim 1, the method comprising: surface processing a (Al, I n,Ga)N wafer along a first side thereof produce a (Al,In,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al,In,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al,In,Ga)N wafer is tilted away from the (Al,In,Ga)N lattice c-plane.
An (Al,In,Ga)N substrate including a (Al,In,Ga)N (0001) surface offcut from the [0001] direction at an angle in a range from about 0.2 to about 10 degrees, and including a (Al, I n,Ga)N (000 1) surface offcut from the [000 1] direction at an angle in a range from about 0.2 to about 10 degrees, wherein the (Al, I n,Ga)N (0001) surface is offcut from the 3 4241-687-CON₃ <0001> direction predominantly towards a direction selected from the group consisting of <10 1 0> and <1110> directions, and wherein the offcut (Al, I n,Ga)N (0001) surface is lapped, polished, or chemical mechanically polished.
The (Al,In,Ga)N substrate of claim 14, wherein said offcut (Al,In,Ga)N (0001) surface has a RMS roughness measured by 50 x 50 m 2 AFM scan that is less than 1 nm, and a dislocation density that is less than 3E₆ cm 2.
The (Al,In,Ga)N substrate of claim 14, wherein the offcut (Al,In,Ga)N (0001) surface is substantially parallel to the offcut (Al,In,Ga)N (000 1) surface.
The (Al, I n,Ga)N substrate of claim 14, wherein the offcut (Al, I n,Ga)N (0001) surface has the same magnitude offcut as the offcut (Al, I n,Ga)N (000 1) surface.
A microelectronic or opto-electronic device article, comprising the (Al,In,Ga)N substrate of claim 14, and a microelectronic or opto-electronic device structure including a homoepitaxial (Al,In,Ga)N layer deposited on said offcut (Al,In,Ga)N (0001) surface.
A method comprising: surface processing a (Al,In,Ga)N wafer along a first side thereof produce a (Al, I n,Ga)N wafer having a wedge conformation; and surface processing the (Al,In,Ga)N wafer having a wedge conformation along a second side thereof to alter the wedge conformation; wherein, following the first and second surface processing steps, the first side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane, and the second side of the (Al, I n,Ga)N wafer is tilted away from the (Al, I n,Ga)N lattice c-plane.
The method of claim 21, wherein following the first and second 1- appi n g surface processing steps, any of the following conditions are satisfied: the first side of the (Al, I n,Ga)N wafer is substantially parallel to the second side of the (Al,In,Ga)N wafer; and each of the offcut (Al,In,Ga)N (0001) surface and the offcut (Al,In,Ga)N (000 1) surface has the same magnitude offcut.
The method of claim 21, further comprising processing at least one of the first side and the second side of the (Al, I n,Ga)N wafer by any of lapping, polishing, and chemical mechanical polishing.
Layer stacks claimed or described, ordered top of device to substrate.
(Al,In,Ga)N offcut substrate
microelectronic or opto-electronic device article with homoepitaxial (Al,In,Ga)N layer
Materials described outside the worked examples.
(Al,In,Ga)N substrate
(Al,In,Ga)N
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 8) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 9) | — |
Related documents with shared materials, methods, properties, or citations.
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 10) | — | (Al,In,Ga)N |
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Thickness | ≤ 0.9 nm | — |
Thickness | ≤ 500000 cm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3000000 cm | — |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 10) | — | (Al,In,Ga)N |
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Thickness | ≤ 0.9 nm | — |
Thickness | ≤ 500000 cm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3000000 cm | — |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 10) | — | (Al,In,Ga)N |
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Thickness | ≤ 0.9 nm | — |
Thickness | ≤ 500000 cm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3000000 cm | — |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 10) | — | (Al,In,Ga)N |
RMS roughness of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Dislocation density of offcut (Al,In,Ga)N (0001) surface (claim 11) | — | (Al,In,Ga)N |
Thickness | ≤ 0.9 nm | — |
Thickness | ≤ 500000 cm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 3000000 cm | — |