Research paper
Computational DFTComputed PhononComputed PLEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
2 characterizations1 property1 figure
2 characterizations2 properties1 figure
3 characterizations2 properties2 figures
3 characterizations2 properties2 figures
3 characterizations3 properties2 figures
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | Te-NR band gap | 1.2eV | — | |||
| Optical Band Gap | graphene band gap | 0eV | — | |||
| Optical Band Gap | MoS₂ band gap | 1.8eV | — | |||
| Optical Band Gap | hybrid band gap | 0.13eV | — | |||
| Optical Band Gap | hybrid band gap | 0.15eV | — | |||
| Optical Band Gap | hybrid band gap | 1.2eV | — | |||
| Optical Band Gap | hybrid band gap | 0.83eV | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.2e | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.6e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 1.1e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 0.8e | — | |||
| Band Gap Shift | A and B exciton shift | 1eV | — |
Related documents with shared materials, methods, properties, or citations.
Twist driven deep-ultraviolet-wavelength exciton funnel effect in bilayer boron nitride
From Structural Stability to Electronic Flexibility: Unveiling Strain-induced Effects in a MoS2/Perylene Orange Hybrid System
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
2 characterizations1 property1 figure
2 characterizations2 properties1 figure
3 characterizations2 properties2 figures
3 characterizations2 properties2 figures
3 characterizations3 properties2 figures
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | Te-NR band gap | 1.2eV | — | |||
| Optical Band Gap | graphene band gap | 0eV | — | |||
| Optical Band Gap | MoS₂ band gap | 1.8eV | — | |||
| Optical Band Gap | hybrid band gap | 0.13eV | — | |||
| Optical Band Gap | hybrid band gap | 0.15eV | — | |||
| Optical Band Gap | hybrid band gap | 1.2eV | — | |||
| Optical Band Gap | hybrid band gap | 0.83eV | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.2e | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.6e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 1.1e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 0.8e | — | |||
| Band Gap Shift | A and B exciton shift | 1eV | — |
Related documents with shared materials, methods, properties, or citations.
Twist driven deep-ultraviolet-wavelength exciton funnel effect in bilayer boron nitride
From Structural Stability to Electronic Flexibility: Unveiling Strain-induced Effects in a MoS2/Perylene Orange Hybrid System
The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study
Towards terahertz excitons in hydrogenated graphene superlattices
Unified ab initio quantum-electrodynamical density-functional theory for cavity-modified electron-phonon-photon coupling in solids
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Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Designable exciton mixing through layer alignment in WS2-graphene heterostructures
Fully relativistic GW/Bethe-Salpeter calculations in BerkeleyGW: implementation, symmetries, benchmarking, and performance
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
2 characterizations1 property1 figure
2 characterizations2 properties1 figure
3 characterizations2 properties2 figures
3 characterizations2 properties2 figures
3 characterizations3 properties2 figures
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | Te-NR band gap | 1.2eV | — | |||
| Optical Band Gap | graphene band gap | 0eV | — | |||
| Optical Band Gap | MoS₂ band gap | 1.8eV | — | |||
| Optical Band Gap | hybrid band gap | 0.13eV | — | |||
| Optical Band Gap | hybrid band gap | 0.15eV | — | |||
| Optical Band Gap | hybrid band gap | 1.2eV | — | |||
| Optical Band Gap | hybrid band gap | 0.83eV | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.2e | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.6e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 1.1e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 0.8e | — | |||
| Band Gap Shift | A and B exciton shift | 1eV | — |
Related documents with shared materials, methods, properties, or citations.
Twist driven deep-ultraviolet-wavelength exciton funnel effect in bilayer boron nitride
From Structural Stability to Electronic Flexibility: Unveiling Strain-induced Effects in a MoS2/Perylene Orange Hybrid System
The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study
Towards terahertz excitons in hydrogenated graphene superlattices
Unified ab initio quantum-electrodynamical density-functional theory for cavity-modified electron-phonon-photon coupling in solids
Highly Modulated Dual Semimetal and Semiconducting γ-GeSe with Strain Engineering
Deep Neural Network for Phonon-Assisted Optical Spectra of Semiconductors at finite temperatures
Manipulating the Optical Response of TaIrTe4 Heterostructures through Band Alignment Strategy
Electron Localization in Non-Compact Covalent Bonds Captured by the r2SCAN+V Approach
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Designable exciton mixing through layer alignment in WS2-graphene heterostructures
Fully relativistic GW/Bethe-Salpeter calculations in BerkeleyGW: implementation, symmetries, benchmarking, and performance
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 property
2 characterizations1 property1 figure
2 characterizations2 properties1 figure
3 characterizations2 properties2 figures
3 characterizations2 properties2 figures
3 characterizations3 properties2 figures
3 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Band Gap | Te-NR band gap | 1.2eV | — | |||
| Optical Band Gap | graphene band gap | 0eV | — | |||
| Optical Band Gap | MoS₂ band gap | 1.8eV | — | |||
| Optical Band Gap | hybrid band gap | 0.13eV | — | |||
| Optical Band Gap | hybrid band gap | 0.15eV | — | |||
| Optical Band Gap | hybrid band gap | 1.2eV | — | |||
| Optical Band Gap | hybrid band gap | 0.83eV | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.2e | — | |||
| Charge Transfer Per Atom | Te to graphene charge transfer per Te atom | 1.6e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 1.1e | — | |||
| Charge Transfer Per Atom | Te to MoS₂ charge transfer per Te atom | 0.8e | — | |||
| Band Gap Shift | A and B exciton shift | 1eV | — |
Related documents with shared materials, methods, properties, or citations.
Twist driven deep-ultraviolet-wavelength exciton funnel effect in bilayer boron nitride
From Structural Stability to Electronic Flexibility: Unveiling Strain-induced Effects in a MoS2/Perylene Orange Hybrid System
The role of intrinsic atomic defects in a Janus MoSSe/XN (X = Al, Ga) heterostructure: a first principles study
Towards terahertz excitons in hydrogenated graphene superlattices
Unified ab initio quantum-electrodynamical density-functional theory for cavity-modified electron-phonon-photon coupling in solids
Highly Modulated Dual Semimetal and Semiconducting γ-GeSe with Strain Engineering
Deep Neural Network for Phonon-Assisted Optical Spectra of Semiconductors at finite temperatures
Manipulating the Optical Response of TaIrTe4 Heterostructures through Band Alignment Strategy
Electron Localization in Non-Compact Covalent Bonds Captured by the r2SCAN+V Approach
Stable Higher-Order Topological Dirac Semimetals with Z2 Monopole Charge in Alternating-twisted Multilayer Graphenes and beyond
Designable exciton mixing through layer alignment in WS2-graphene heterostructures
Fully relativistic GW/Bethe-Salpeter calculations in BerkeleyGW: implementation, symmetries, benchmarking, and performance