Abstract

Electrostatic doping is used to tune light-matter coupling in a WS₂-based multi-quantum-well superlattice on SiO₂/Si. The work combines MOCVD-grown monolayer WS2, ALD-grown Al₂O₃ spacers, wet transfer fabrication, and spectroscopic ellipsometry to show gate-dependent exciton and trion coupling, culminating in full 2π phase modulation of reflected light in the TE-polarized exciton-polariton regime.

Abstract

Electrostatic doping is used to tune light-matter coupling in a WS₂-based multi-quantum-well superlattice on SiO₂/Si. The work combines MOCVD-grown monolayer WS2, ALD-grown Al₂O₃ spacers, wet transfer fabrication, and spectroscopic ellipsometry to show gate-dependent exciton and trion coupling, culminating in full 2π phase modulation of reflected light in the TE-polarized exciton-polariton regime.

Abstract

Electrostatic doping is used to tune light-matter coupling in a WS₂-based multi-quantum-well superlattice on SiO₂/Si. The work combines MOCVD-grown monolayer WS2, ALD-grown Al₂O₃ spacers, wet transfer fabrication, and spectroscopic ellipsometry to show gate-dependent exciton and trion coupling, culminating in full 2π phase modulation of reflected light in the TE-polarized exciton-polariton regime.

Abstract

Electrostatic doping is used to tune light-matter coupling in a WS₂-based multi-quantum-well superlattice on SiO₂/Si. The work combines MOCVD-grown monolayer WS2, ALD-grown Al₂O₃ spacers, wet transfer fabrication, and spectroscopic ellipsometry to show gate-dependent exciton and trion coupling, culminating in full 2π phase modulation of reflected light in the TE-polarized exciton-polariton regime.