| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quartz substrate thickness | 0.5mm | — | — | ||
| Substrate Thickness | graphite gate thickness | 30nm | — | — | ||
| Substrate Thickness | hBN insulating layer thickness | 27nm | — | — | ||
| Substrate Thickness | hBN tunnel barrier thickness | 1.5nm | — | |||
| Layer Count | hBN tunnel barrier layers | 4 | — | — | ||
| Electronic State Position | E₁ localized defect state | 90meV | — | |||
| Electronic State Position | defect position z1 from barrier edge | 0.75nm | — | |||
| Electrochemical Potential | μB at Vb = 0, Vg = 1.65 V | 106meV | — | |||
| Electrochemical Potential | μT at Vb = 0, Vg = 1.65 V | 75meV | — | |||
| Carrier Density | nB | 7.2610¹¹ cm⁻² | — | |||
| Carrier Density | nT | 3.6310¹¹ cm⁻² | — | |||
| Activation Energy | thermal activation energy Ea | 0.2meV | — | |||
| Coulomb Gap Width | Coulomb gap width | 10meV | — | |||
| Magnetic Field Periodicity | BF | 3.9T | — | |||
| Magnetic Field At Resonance | measurement field for Fig. 1c | 3.75T | — |
Electric field-tunable layer polarization in graphene/boron nitride twisted quadrilayer superlattices
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quartz substrate thickness | 0.5mm | — | — | ||
| Substrate Thickness | graphite gate thickness | 30nm | — | — | ||
| Substrate Thickness | hBN insulating layer thickness | 27nm | — | — | ||
| Substrate Thickness | hBN tunnel barrier thickness | 1.5nm | — | |||
| Layer Count | hBN tunnel barrier layers | 4 | — | — | ||
| Electronic State Position | E₁ localized defect state | 90meV | — | |||
| Electronic State Position | defect position z1 from barrier edge | 0.75nm | — | |||
| Electrochemical Potential | μB at Vb = 0, Vg = 1.65 V | 106meV | — | |||
| Electrochemical Potential | μT at Vb = 0, Vg = 1.65 V | 75meV | — | |||
| Carrier Density | nB | 7.2610¹¹ cm⁻² | — | |||
| Carrier Density | nT | 3.6310¹¹ cm⁻² | — | |||
| Activation Energy | thermal activation energy Ea | 0.2meV | — | |||
| Coulomb Gap Width | Coulomb gap width | 10meV | — | |||
| Magnetic Field Periodicity | BF | 3.9T | — | |||
| Magnetic Field At Resonance | measurement field for Fig. 1c | 3.75T | — |
Electric field-tunable layer polarization in graphene/boron nitride twisted quadrilayer superlattices
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quartz substrate thickness | 0.5mm | — | — | ||
| Substrate Thickness | graphite gate thickness | 30nm | — | — | ||
| Substrate Thickness | hBN insulating layer thickness | 27nm | — | — | ||
| Substrate Thickness | hBN tunnel barrier thickness | 1.5nm | — | |||
| Layer Count | hBN tunnel barrier layers | 4 | — | — | ||
| Electronic State Position | E₁ localized defect state | 90meV | — | |||
| Electronic State Position | defect position z1 from barrier edge | 0.75nm | — | |||
| Electrochemical Potential | μB at Vb = 0, Vg = 1.65 V | 106meV | — | |||
| Electrochemical Potential | μT at Vb = 0, Vg = 1.65 V | 75meV | — | |||
| Carrier Density | nB | 7.2610¹¹ cm⁻² | — | |||
| Carrier Density | nT | 3.6310¹¹ cm⁻² | — | |||
| Activation Energy | thermal activation energy Ea | 0.2meV | — | |||
| Coulomb Gap Width | Coulomb gap width | 10meV | — | |||
| Magnetic Field Periodicity | BF | 3.9T | — | |||
| Magnetic Field At Resonance | measurement field for Fig. 1c | 3.75T | — |
Electric field-tunable layer polarization in graphene/boron nitride twisted quadrilayer superlattices
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | quartz substrate thickness | 0.5mm | — | — | ||
| Substrate Thickness | graphite gate thickness | 30nm | — | — | ||
| Substrate Thickness | hBN insulating layer thickness | 27nm | — | — | ||
| Substrate Thickness | hBN tunnel barrier thickness | 1.5nm | — | |||
| Layer Count | hBN tunnel barrier layers | 4 | — | — | ||
| Electronic State Position | E₁ localized defect state | 90meV | — | |||
| Electronic State Position | defect position z1 from barrier edge | 0.75nm | — | |||
| Electrochemical Potential | μB at Vb = 0, Vg = 1.65 V | 106meV | — | |||
| Electrochemical Potential | μT at Vb = 0, Vg = 1.65 V | 75meV | — | |||
| Carrier Density | nB | 7.2610¹¹ cm⁻² | — | |||
| Carrier Density | nT | 3.6310¹¹ cm⁻² | — | |||
| Activation Energy | thermal activation energy Ea | 0.2meV | — | |||
| Coulomb Gap Width | Coulomb gap width | 10meV | — | |||
| Magnetic Field Periodicity | BF | 3.9T | — | |||
| Magnetic Field At Resonance | measurement field for Fig. 1c | 3.75T | — |
Electric field-tunable layer polarization in graphene/boron nitride twisted quadrilayer superlattices
